R5112x081D [RICOH]
Input Voltage Range (Maximum Rating) 3.5 V to 42 V (50 V);
| 型号： | R5112x081D |
| 厂家： | 
RICOH ELECTRONICS DEVICES DIVISION |
| 描述： | Input Voltage Range (Maximum Rating) 3.5 V to 42 V (50 V) |
| 文件： | 总34页 (文件大小：1910K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R5112S Series
42 V Input Ultra Low Supply Current VR with RESET
NO.EA-406-160420
OUTLINE
R5112S is an ultra-low supply current voltage regulator with a voltage detector featuring 200 mA output
current and 42 V input voltage. This device consists of an Output Short-circuit Protection Circuit, an
Overcurrent Protection Circuit, and a Thermal Shutdown Circuit in addition to the basic regulator circuits. The
operating temperature range is between −40°C to 105°C, and the maximum input voltage is 42 V. The output
voltages are internally fixed at either of the following: 1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V, 3.4 V, or 5.0 V. The
output voltage accuracy is ±0.6%. The detector threshold accuracy of the voltage detector is ±0.6%. This
device is offered in an 8-pin HSOP-8E package with high power dissipation.
FEATURES
● Input Voltage Range (Maximum Rating)··········· 3.5 V to 42 V (50 V)
● Operating Temperature Range······················· −40°C to 105°C
(Usable in high-temperature environment)
● Supply Current··········································· Typ. 3.8 µA
● Standby Current ········································· Typ. 0.1 µA
● Dropout Voltage ········································· Typ. 0.6 V (IOUT = 200 mA, VSET = 5.0 V)
● Output Voltage Range ································· 1.8 V / 2.5 V / 2.8 V / 3.0 V / 3.3 V / 3.4 V / 5.0 V
*Contact Ricoh sales representatives for other voltages.
● Output Voltage Accuracy ······························ ±0.6% (Ta = 25°C)
● Output Voltage Temperature-Drift Coefficient ···· Typ. ±60 ppm/°C
● Detector Threshold Range···························· R5112Sxx1B: 1.6 V to 4.8 V
R5112Sxx1D: 2.9 V to 4.8 V
● Detector Threshold Accuracy························· ±0.6% (Ta = 25°C)
● Detector Threshold Temperature Coefficient ····· Typ. ±60 ppm/°C
● Line Regulation ·········································· Typ. 0.01%/V (2.5 V ≤ VSET: VSET + 1 V ≤ VIN ≤ 42 V)
● Built-in Output Short-circuit Protection Circuit···· Typ. 80 mA
● Built-in Overcurrent Protection Circuit·············· Typ. 350 mA
● Built-in Thermal Shutdown Circuit··················· Thermal Shutdown Temperature: Typ. 170°C
● Ceramic capacitors are recommended
to be used with this device ·························· COUT = 0.1 μF or more
● Package ··················································· HSOP-8E
APPLICATIONS
● Power source for home appliances such as refrigerators, rice cookers, and electric hot-water pot.
● Power source for notebook PCs, digital TVs, cordless phones, and private LAN system.
● Power source for office equipment machines such as copiers, printers, facsimiles, scanners,
and projectors.
1
R5112S
NO.EA-406-160420
SELECTION GUIDE
The set output voltage is user-selectable.
Halogen Free
Product Name
Package
Quantity per Reel
Pb Free
HSOP-8E
1,000 pcs
Yes
Yes
R5112Sxx1∗-E2-FE
xx: Specify the set output voltage (VSET) and the set detector threshold (−VSET) by using serial numbers
starting from 01.(1)
∗: Select the voltage detection type from the following
B: SENSE pin detection
D: VOUT pin detection
(1) The combinations of VSET and −VSET are the following three conditions.
SENSE pin detection: VSET = 3.3 V to 5.0 V, −VSET = 2.5 V to 5.0 V
SENSE pin detection: VSET = 1.8 V to 3.2 V, −VSET = 1.6 V to 2.9 V
VOUT pin detection: VSET = 3.3 V to 5.0 V, −VSET = 2.9 V to 5.0 V
2
R5112S
NO.EA-406-160420
BLOCK DIAGRAMS
R5112SxxxB
(SENSE Pin Detection)
Thermal shutdown
VDD
CE
VOUT
ON/OFF
Circuit
Current Limit
GND
CD
SENSE
DOUT
R5112SxxxD
(VOUT Pin Detection)
Thermal shutdown
VDD
CE
VOUT
ON/OFF
Circuit
Current Limit
GND
CD
DOUT
3
R5112S
NO.EA-406-160420
PIN DESCRIPTIONS
HSOP-8E
Top View
7 6
Bottom View
8
5
5
6
7
8
(1)
1
1
2
3
4
4
3
2
1
HSOP-8E (R5112SxxxB/D)
Pin No.
Symbol
VDD
Description
1
2
3
4
5
Input Pin
CE
Chip Enable Pin (Active-high)
No Connection
NC
DOUT(2)
VD Output Pin (Nch Open Drain)
CD
Pin for setting VD Release Output Delay Time (power-on reset time)
SENSE
NC
VD Voltage SENSE Pin (R5112SxxxB)
No Connection (R5112SxxxD)
Ground Pin
6
7
8
GND
VOUT
Output Pin
(1) The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate
level). The tab is recommended to connect to the ground plane on the board. Otherwise it may be left floating.
(2) DOUT pin should be pulled-up to an external voltage level.
4
R5112S
NO.EA-406-160420
PIN EQUIVALENT CIRCUIT DIAGRAMS
VOUT Pin
CE Pin
Driver
CE
VOUT
CD Pin
DOUT Pin
DOUT
Driver
CD
Driver
SENSE Pin
SENSE
5
R5112S
NO.EA-406-160420
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
−0.3 to 50
Unit
V
Input Voltage
VIN
Peak Input Voltage(1)
Input Voltage (CE Pin)
Output Voltage
60
V
VCE
VOUT
−0.3 to 50
V
−0.3 to VIN + 0.3 ≤ 50
−0.3 to 7.0
−0.3 to 7.0
−0.3 to 7.0
V
VCD
CD Pin Output Voltage
V
VDOUT
VSENSE
DOUT Pin Output Voltage
SENSE Pin Input Voltage
V
V
Ultra High Wattage
Land Pattern
PD
Power Dissipation(2) (HSOP-8E)
2900
mW
Tj
Junction Temperature
Storage Temperature
−40 to 125
−55 to 125
°C
°C
Tstg
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent
damages and may degrade the lifetime and safety for both device and system using the device in the field. The
functional operation at or over these absolute maximum ratings are not assured.
RECOMMENDED OPERATING CONDITIONS
Symbol
VIN
Item
Rating
3.5 to 42
0 to 42
Unit
V
Input Voltage
VCE
Input Voltage (CE Pin)
V
VDOUT
VSENSE
Ta
DOUT Pin Output Voltage
SENSE Pin Input Voltage
Operating Temperature
0 to 5.5
V
0 to 5.5
V
−40 to 105
°C
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the
semiconductor devices may receive serious damage when they continue to operate over the recommended operating
conditions.
(1) Duration time: 200 ms
(2) Refer to POWER DISSIPATION for detailed information.
6
R5112S
NO.EA-406-160420
ELECTRICAL CHARACTERISTICS
CIN = COUT = 0.1 µF, VIN = 14 V, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 105°C.
R5112Sxxxx-FE
For All
(Ta = 25°C)
Symbol
Item
Conditions
Min. Typ. Max. Unit
ISS
Supply Current
IOUT = 0 mA
VIN = 42 V, VCE = 0 V
3.8
0.1
9.8
1.0
µA
µA
Istandby Standby Current
IPD
CE Pull-down Current
0.2
0.6
µA
VCEH
VCEL
CE Input Voltage "H"
CE Input Voltage "L"
2.2
0
42
V
V
1.0
All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C).
VR
(Ta = 25°C)
Symbol
Item
Conditions
Min. Typ. Max. Unit
VSET + 1 V ≤ VIN ≤ 42 V
(VSET < 2.5 V: VSET + 1 V
= 3.5 V), IOUT = 1 mA
Ta = 25°C
×0.994
×0.984
×1.006
×1.016
VOUT
Output Voltage
V
−40°C ≤ Ta ≤ 105°C
∆VOUT
∆IOUT
/
VIN = VSET + 3.0 V
1 mA ≤ IOUT ≤ 200 mA
Load Regulation
−10
0
40
mV
VSET < 2.5 V
1.6
2.5
2.5 V ≤ VSET < 3.3 V
3.3 V ≤ VSET < 5.0 V
VSET = 5.0 V
1.2
0.8
0.6
2.2
2.0
1.2
IOUT = 200 mA
VDIF
Dropout Voltage
Line Regulation
V
∆VOUT
∆VIN
/
VSET + 1 V ≤ VIN ≤ 42 V
−0.02 0.01
0.02
%/V
(VSET < 2.5 V: VSET + 1 V = 3.5 V), IOUT = 1 mA
VIN = VSET + 3.0 V
ILIM
ISC
Output Current Limit
Short current Limit
220
60
350
80
420
110
mA
mA
°C
VOUT = 0 V
Thermal Shutdown
Temperature
TTSD
Junction Temperature
170
Thermal Shutdown
Release Temperature
TTSR
Junction Temperature
135
°C
All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C).
7
R5112S
NO.EA-406-160420
CIN = COUT = 0.1 µF, VIN = 14 V, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 105°C.
VD
(Ta = 25°C)
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
Ta = 25°C
×0.994
×1.006
×1.016
−VDET
VDD = VOUT
(VOUT detection)
−VDET Detector Threshold
V
V
−40°C ≤ Ta ≤ 105°C
×0.984
−VDET
×0.011 ×0.018 ×0.025
−VDET
Detector Threshold
VHYS
Hysteresis
Release Output Delay
tdelay
CD = 10 nF
3
6
15
ms
V
Time (Power-on Reset)
VDOUT DOUT Pull-up Voltage
5.5
Nch. Output Current
IOUTDOUT
VIN = 3.5 V, VDOUT = 0.1 V
VDOUT = 5.5 V
1.0
2.6
mA
(DOUT Output Pin)
Nch. Leakage Current
ILEAKDOUT
0.3
µA
(DOUT Output Pin)
CD Pin Discharge
Nch Tr.ON Resistance
RLCD
12
30
50
kΩ
VCE = 0 V, VCD = 0.1 V
RSENSE SENSE Resistance
2
MΩ
All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C).
8
R5112S
NO.EA-406-160420
Product-specific Electrical Characteristics
R5112SxxxB-FE
VOUT [V]
(Ta = 25°C)
VDET [V]
VHYS [V]
Product
Name
−40°C ≤ Ta ≤
105°C
Min.
−40°C ≤ Ta ≤
Ta = 25°C
Ta = 25°C
105°C
Min.
Typ.
5.000
1.800
5.000
5.000
5.000
5.000
5.000
3.300
3.300
3.300
3.300
5.000
3.400
3.300
Max.
5.030
1.810
5.030
5.030
5.030
5.030
5.030
3.319
3.319
3.319
3.319
5.030
3.420
3.319
Max.
5.080
1.829
5.080
5.080
5.080
5.080
5.080
3.353
3.353
3.353
3.353
5.080
3.454
3.353
Min.
4.573
1.590
4.473
4.374
4.274
4.175
3.678
2.982
2.883
2.783
2.684
4.075
3.081
3.081
Typ.
4.600
1.600
4.500
4.400
4.300
4.200
3.700
3.000
2.900
2.800
2.700
4.100
3.100
3.100
Max.
4.627
1.610
4.527
4.426
4.326
4.225
3.722
3.018
2.917
2.817
2.716
4.125
3.119
3.119
Min.
4.527
1.574
4.428
4.330
4.231
4.133
3.641
2.952
2.854
2.755
2.657
4.034
3.050
3.050
Max.
4.674
1.626
4.572
4.470
4.369
4.267
3.759
3.048
2.946
2.845
2.743
4.166
3.150
3.150
Min.
0.050
0.017
0.049
0.048
0.047
0.045
0.040
0.032
0.031
0.030
0.029
0.044
0.034
0.034
Max.
R5112x011B 4.970
R5112x021B 1.790
R5112x031B 4.970
R5112x041B 4.970
R5112x051B 4.970
R5112x061B 4.970
R5112x071B 4.970
R5112x081B 3.281
R5112x091B 3.281
R5112x101B 3.281
R5112x111B 3.281
R5112x121B 4.970
R5112x131B 3.380
R5112x141B 3.281
4.920
1.772
4.920
4.920
4.920
4.920
4.920
3.248
3.248
3.248
3.248
4.920
3.346
3.248
0.117
0.041
0.115
0.112
0.110
0.107
0.094
0.077
0.074
0.071
0.069
0.105
0.079
0.079
R5112SxxxD-FE
(Ta = 25°C)
VOUT [V]
Max.
VDET [V]
Max.
VHYS [V]
Product
Name
Min.
−40°C ≤ Ta ≤
−40°C ≤ Ta ≤
Ta = 25°C
Typ.
Ta = 25°C
Typ.
105°C
105°C
Min.
4.920
4.920
4.920
4.920
4.920
4.920
3.248
3.248
4.920
3.346
3.248
Max.
5.080
5.080
5.080
5.080
5.080
5.080
3.353
3.353
5.080
3.454
3.353
Min.
Min.
4.527
4.428
4.330
4.231
4.133
3.641
2.952
2.854
4.034
3.050
3.050
Max.
4.674
4.572
4.470
4.369
4.267
3.759
3.048
2.946
4.166
3.150
3.150
Min.
Max.
0.117
0.115
0.112
0.110
0.107
0.094
0.077
0.074
0.105
0.079
0.079
R5112x011D 4.970 5.000 5.030
R5112x031D 4.970 5.000 5.030
R5112x041D 4.970 5.000 5.030
R5112x051D 4.970 5.000 5.030
R5112x061D 4.970 5.000 5.030
R5112x071D 4.970 5.000 5.030
R5112x081D 3.281 3.300 3.319
R5112x091D 3.281 3.300 3.319
R5112x121D 4.970 5.000 5.030
R5112x131D 3.380 3.400 3.420
R5112x141D 3.281 3.300 3.319
0.068
0.066
0.065
0.063
0.062
0.054
0.044
0.043
0.060
0.046
0.046
4.573 4.600 4.627
4.473 4.500 4.527
4.374 4.400 4.426
4.274 4.300 4.326
4.175 4.200 4.225
3.678 3.700 3.722
2.982 3.000 3.018
2.883 2.900 2.917
4.075 4.100 4.125
3.081 3.100 3.119
3.081 3.100 3.119
9
R5112S
NO.EA-406-160420
THEORY OF OPERATION
Timing Chart
R5112SxxxB/D Voltage Detector
VIN
+VDET
VOUT /Vsense
-VDET
(2)
tdelay
tdelay
VTCD
VCD
VDOUT
(1)
(3)
(4)
(3)
R5112SxxxB/D VD Timing Chart
(1) When the VOUT pin voltage (VOUT)/SENSE pin voltage (VSENSE) becomes more than the release voltage
(+VDET), the DOUT pin voltage (VDOUT) becomes “H” after the release output delay time (tdelay).
(2) When the detect output delay time is 25 µs (Typ.) or less even if VOUT/VSENSE becomes lower than the
detector threshold (−VDET), the voltage detector (VD) does not go into the detecting state.
(3) When VOUT/VSENSE becomes lower than −VDET, VDOUT becomes "L" after the detect output delay time
(tPHL, Typ. 25 µs) and the VD goes into the detecting state.
(4) When VOUT/VSENSE becomes more than +VDET, VDOUT becomes "H" after the release output delay time
(VTCD = Typ. 0.73 V).
10
R5112S
NO.EA-406-160420
Delay Operation and Released Output Delay Time (tdelay)
Released Voltage (+VDET
Detector Voltage (-VDET
)
VOUT/
SENSE Pin
)
CD Pin Threshold Voltage
(VTCD
)
CD Pin Voltage
DOUT Pin
GND
GND
Release Output Delay Time Detect Output Delay Time (tPHL
)
(tdelay)
Released Output Delay Timing Diagram
When the operating voltage higher than the released voltage is applied to VOUT pin (R5112SxxxD) or
SENSE pin (R5112SxxxB), charge to an external capacitor starts, then CD pin voltage (VCD) increases.
DOUT pin (R5112SxxxB/D) maintains the released output until VCD reaches the threshold voltage of the
release output delay pin (VTCD). And when VCD is over VTCD, DOUT pin is inverted from “L” to “H”. That is, the
charged external capacitor starts discharging.
When the operating voltage lower than the detector threshold is applied to VOUT pin/SENSE pin, the detect
output delay time, which is the time until the output voltage is inverted from “H” to “L”, remains constant
independent of the external capacitor.
Released Output Delay Time
Released Output Delay Time (tdelay) is determined by the following formula. CD (F) represents capacitance of
the external capacitor
tdelay (s) = 0.73 × CD (F) / (1.2 × 10-6)
Use 100 pF or higher CD when allowing this device to detect VOUT/SENSE pin decreasing slower than 0.1 V/s.
Released Output Delay Time indicates the time between the instance when VOUTpin (R5112SxxxD) or SENSE
pin (R5112SxxxB) shifts from “1.5 V” to “−VDET + 2.0 V” by the application of a pulse voltage and the instance
when the output voltage reaches 2.5 V after pulled up DOUT pin (R5112SxxxB/D) to 5.0 V with a resistor of
100 kΩ.
-VDET+2.0V
VOUT/SENSE
1.5V
GND
DOUT
5.0V
2.5V
GND
tPHL
tdelay
11
R5112S
NO.EA-406-160420
Voltage Setting (R5112SxxxB/D)
VD detects the drop of the VR output voltage (VOUT). When the VD release voltage (+VDET) is set to a voltage
above the VR output voltage, the reset signal of VD is not released even if VD monitors the VR output voltage
returns to the normal value after detecting the drop of VR. To prevent this issue, the following condition is
required between VOUT and +VDET.
(VR Set Output Voltage) x 0.984 − 40 mV > (VD Set Detector Threshold) x 1.016 x 1.025
When using a device without the above conditions of VOUT and +VDET, careful consideration must be given to
the system operation before use.
12
R5112S
NO.EA-406-160420
APPLICATION INFORMATION
TYPICAL APPLICATIONS
V
IN
Microprocessor
V
V
V
CC
DD
OUT
C2
R5112SxxxB
R1
C1
CE
SENSE
DOUT
RESET
GND
CD
CD
R5112SxxxB Typical Applications
V
IN
Microprocessor
V
V
V
CC
DD
OUT
C2
R5112SxxxD
R1
C1
CE
RESET
D
OUT
GND
C
D
CD
R5112SxxxD Typical Applications
13
R5112S
NO.EA-406-160420
Recommended Components
Symbol
Description
C1 (CIN)
Ceramic Capacitor, 0.1 µF or more, 50V Rated Voltage, CGA3E3X8R1H104K080AB, TDK
Ceramic Capacitor, 0.1 µF or more, 50V Rated Voltage, CGA3E3X8R1H104K080AB, TDK
C2 (COUT
)
A capacitor corresponding to setting for Release Output Delay Time is required. Refer to
Delay Operation and Released Output Delay Time (tdelay) in THEORY OF OPERATION for
details.
CD
R1
A resistor is required to set with consideration of the output current and the leakage current.
Refer to ELECTRICAL CHARACTERISTICS for details.
14
R5112S
NO.EA-406-160420
TECHNICAL NOTES
Phase Compensation
In the R5112S, phase compensation is provided to secure stable operation even when the load current is
varied. For this purpose, be sure to use 0.1 µF or more of a capacitor (C2).
In case of using a tantalum type capacitor and the ESR (Equivalent Series Resistance) value of the capacitor
is large, the output might be unstable. Evaluate the circuit including consideration of frequency characteristics.
PCB Layout
Ensure the VDD and GND lines are sufficiently robust. If their impedance is too high, noise pickup or unstable
operation may result. Connect 0.1 µF or more of the capacitor C1 between the VDD and GND, and as close
as possible to the pins. In addition, connect the capacitor C2 between VOUT and GND, and as close as
possible to the pins.
Prohibited Area of the Input Voltage Variation
When the input voltage is steeply changed in the following prohibited area, the device may fail to detect or fail
to release.
tf
V
IN
Vp-p
GND
Variation Prohibited Area at Input Voltage (VIN) Falling
tr
Vp-p
V
IN
GND
Variation Prohibited Area at Input Voltage (VIN) Rising
15
R5112S
NO.EA-406-160420
TYPICAL CHARACTERISTICS
Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed.
1) Output Voltage vs. Output Current (Ta = 25°C)
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
VSET = 5.0 V
2) Output Voltage vs. Input Voltage (Ta = 25°C)
VSET = 1.8 V
VSET = 2.5 V
16
R5112S
NO.EA-406-160420
VSET = 3.3 V
VSET = 5.0 V
3) Supply Current vs. Temperature
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
VSET = 5.0 V
17
R5112S
NO.EA-406-160420
4) Supply Current vs. Input Voltage
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
VSET = 5.0 V
5) Output Voltage vs. Temperature
VSET = 1.8 V
VSET = 2.5 V
18
R5112S
NO.EA-406-160420
VSET = 3.3 V
VSET = 5.0 V
6) Dropout Voltage vs. Output Current
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
VSET = 5.0 V
19
R5112S
NO.EA-406-160420
7) Dropout Voltage vs. Output Voltage (Ta = 25°C)
8) Ripple Rejection vs. Input Voltage (Ta = 25°C, Ripple = 0.2 Vpp)
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
VSET = 5.0 V
20
R5112S
NO.EA-406-160420
9) Ripple Rejection vs. Frequency (Ta = 25°C, Ripple = 0.2 Vpp)
VSET = 1.8 V VSET = 2.5 V
VSET = 3.3 V
VSET =5.0 V
10) Input Transient Response (Ta = 25°C)
VSET = 1.8 V
VSET = 2.5 V
5.3
12
10
8
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
12
IOUT=1mA
10
IOUT=1mA
4.8
Input Voltage
tr=tf=1μs
4.3
8
6
4
2
0
Input Voltage
tr=tf=1μs
3.8
3.3
2.8
2.3
1.8
1.3
0.8
0.3
6
4
2
0
Output Voltage
Output Voltage
C2=10μF
C2=0.1μF
C2=0.1μF
C2=10μF
1.0
-1
-1
0
1
2
3
4
5
6
0
1
2
3
4
5
6
time (ms)
time (ms)
21
R5112S
NO.EA-406-160420
VSET = 3.3 V
VSET = 5.0 V
6.8
6.3
12
10
8
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
14
12
10
8
IOUT=1mA
IOUT=1mA
Input Voltage
tr=tf=1μs
Input Voltage
tr=tf=1μs
5.8
5.3
4.8
4.3
3.8
3.3
2.8
2.3
1.8
6
4
6
2
4
0
2
Output Voltage
Output Voltage
0
C2=0.1μF
C2=10μF
C2=0.1μF
C2=10μF
3.5
-1
-1
0
1
2
3
4
5
6
0
1
2
3
4
5
6
time (ms)
time (ms)
11) Load Transient Response (Ta = 25°C)
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
VSET = 5.0 V
22
R5112S
NO.EA-406-160420
12) CE Transient Response (Ta = 25°C)
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
23
R5112S
NO.EA-406-160420
VSET = 5.0 V
24
R5112S
NO.EA-406-160420
13) Power-on Transient Response (Ta = 25°C)
VSET = 1.8 V
VSET = 2.5 V
5
4
3
2
1
900
800
700
600
500
400
300
200
100
0
5
4
3
2
1
900
800
700
600
500
400
300
200
100
0
VIN
VIN
0
COUT=0.1(uF) VOUT
COUT=10.0(uF) VOUT
COUT=0.1(uF) INRUSH
COUT=10.0(uF) INRUSH
0
COUT=0.1(uF) VOUT
COUT=10.0(uF) VOUT
COUT=0.1(uF) INRUSH
COUT=10.0(uF) INRUSH
-1
-2
-3
-4
-5
-1
-2
-3
-4
-5
-100
-100
-0.2
0.2
0.6
1
1.4
1.8
-0.2 0.2 0.6
1
1.4 1.8
TIME(ms)
TIME(ms)
VSET = 3.3 V
VSET = 5.0 V
6
5
4
3
2
900
800
700
600
500
400
300
200
100
0
8
7
900
800
700
600
500
400
300
200
100
0
6
5
4
3
2
1
0
1
VIN
VIN
0
COUT=0.1(uF) VOUT
COUT=0.1(uF) VOUT
COUT=10.0(uF) VOUT
COUT=0.1(uF) INRUSH
-1
-2
-3
-4
-5
-6
-7
-8
-1
-2
-3
-4
-5
-6
COUT=10.0(uF) VOUT
COUT=0.1(uF) INRUSH
COUT=10.0(uF) INRUSH
COUT=10.0(uF) INRUSH
-100
-100
-0.2 0.2 0.6
1
1.4 1.8
-0.2
0.2
0.6
1
1.4
1.8
TIME(ms)
TIME(ms)
14) Load Dump (Ta = 25°C)
VSET = 1.8 V
VSET = 2.5 V
25
R5112S
NO.EA-406-160420
VSET = 3.3 V
VSET = 5.0 V
15) Cranking (Ta = 25°C)
VSET = 5.0 V
16) Detect/Release Delay Time vs. Temperature
Detect Output Delay Time
Release Output Delay Time
25
20
15
10
5
8
7
6
5
4
3
2
1
0
0
-40 -25 -10 5 20 35 50 65 80 95
-40 -25 -10
5
20 35 50 65 80 95
Ta(°C)
Ta(°C)
26
R5112S
NO.EA-406-160420
17) Detect/Release Delay Time vs. Input Voltage
Detect Output Delay Time
Release Output Delay Time
35
30
25
20
15
8
7
6
5
4
3
2
1
0
-40(°C)
25(°C)
10
5
-40(°C)
25(°C)
105(°C)
105(°C)
0
0
6
12
18
24
30
36
42
0
6
12
18
24
30
36
42
Input Voltage (V)
Input Voltage (V)
18) Detect (Release) Delay Time vs. External Capacitance for
(Ta = 25°C)
CD Pin
1000
100
10
tdelay
1
0
tPHL
100
0
0.01
1
External Capacitance (nF)
19) Pulse Width vs. Overdrive Voltage (Ta = 25°C)
200
VDSET=1.6(V)
150
VDSET=4.6(V)
100
50
0
10
100
1000
Overdrive Voltage (mV)
27
R5112S
NO.EA-406-160420
20) DOUT Pin Voltage vs. SENSE Pin Input Voltage (Ta = 25°C)
-VSET = 1.6 V
-VSET = 2.2 V
-VSET = 3.0 V
-VSET = 4.6 V
21) CD Driver Output Current vs. Input Voltage
22) Nch Driver Output Current vs. Input Voltage
CE = 5.0 V, SENSE = 5.5 V
DOUT = 0.1 V
28
R5112S
NO.EA-406-160420
23) DOUT Pin Voltage vs. Input Voltage (VOUT Detection) (Ta = 25°C)
-VSET = 1.6 V -VSET = 2.2 V
-VSET = 3.0 V
-VSET = 4.6 V
29
R5112S
NO.EA-406-160420
Input Transient/Load Transient vs. Output Capacity (C2)
R5112 performs a stable operation by using 0.1 µF of ceramic capacitor as the output capacitor. However,
the variation of output voltage may not meet the demand of the system when input voltage and load current
vary. In such cases, the variation of output voltage can be minimized significantly by using 10 µF or higher
ceramic capacitor. When using a high-capacity electrolytic capacitor for the output line, place the electrolytic
capacitor a few centimeters apart from the IC after arranging the ceramic capacitor close to the IC.
Input Transient Response (VSET = 3.3 V)
Load Transient Response (VSET = 3.3 V)
6.8
12
10
8
IOUT=1mA
6.3
5.8
5.3
4.8
4.3
3.8
3.3
2.8
2.3
1.8
Input Voltage
tr=tf=1μs
6
4
2
0
Output Voltage
C2=0.1μF
C2=10μF
-1
0
1
2
3
4
5
6
time (ms)
30
R5112S
NO.EA-406-160420
ESR vs. OUTPUT CURRENT
It is recommended that a ceramic type capacitor be used for this device. However, other types of capacitors
having lower ESR can also be used. The relation between the output current (IOUT) and the ESR of output
capacitor is shown below.
V
V
OUT
DD
C2
R5112xxxxB
C1
I
OUT
CE
GND
ESR
C1 = Ceramic 0.1 μF, C2 = Ceramic 0.1 μF
Measurement Conditions
Frequency Band: 10 Hz to 2 MHz
Measurement Temperature: −40°C to 125°C
Hatched Area: Noise level is 40 μV (average) or below
Ceramic Capacitors: C1 = 0.1 μF, C2 = 0.1 μF
VSET = 1.8 V
VSET = 2.5 V
VSET = 3.3 V
VSET = 5.0 V
31
POWER DISSIPATION
HSOP-8E
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following conditions are used in this measurement.
Measurement Conditions
Ultra-High Wattage Land Pattern
Environment
Board Material
Mounting on Board (Wind Velocity = 0 m/s)
Glass Cloth Epoxy Plastic (Four-Layer Board)
76.2 mm × 114.3 mm × 0.8 mm
Board Dimensions
Outer Layers (First and Fourth Layers): Approx. 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Copper Ratio
Through-holes
φ 0.4 mm × 21 pcs
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Ultra-High Wattage Land Pattern
Power Dissipation
2.9 W
θja = (125 − 25°C) / 2.9 W = 35°C/W
θjc = 10°C/W
Thermal Resistance
76.2
50
4.0
2.9
3.0
Ultra-High Wattage Land Pattern
2.0
1.0
0
105
1125 150
0
25
50
75
IC Mount Area (mm)
Ambient Temperature (°C)
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
PACKAGE DIMENSIONS
HSOP-8E
∗
HSOP-8E Package Dimensions
∗ The tab on the bottom of the package shown by blue circle is substrate potential (GND). It is recommended that this
tab be connected to the ground plane on the board but it is possible to leave the tab floating.
i
1.The products and the product specifications described in this document are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before deciding
to use the products, please refer to Ricoh sales representatives for the latest information thereon.
2.The materials in this document may not be copied or otherwise reproduced in whole or in part without
prior written consent of Ricoh.
3.Please be sure to take any necessary formalities under relevant laws or regulations before exporting or
otherwise taking out of your country the products or the technical information described herein.
4.The technical information described in this document shows typical characteristics of and example
application circuits for the products. The release of such information is not to be construed as a warranty
of or a grant of license under Ricoh's or any third party's intellectual property rights or any other rights.
5.The products listed in this document are intended and designed for use as general electronic
components in standard applications (office equipment, telecommunication equipment, measuring
instruments, consumer electronic products, amusement equipment etc.). Those customers intending to
use a product in an application requiring extreme quality and reliability, for example, in a highly specific
application where the failure or misoperation of the product could result in human injury or death
(aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and
transportation equipment, combustion equipment, safety devices, life support system etc.) should first
contact us.
6.We are making our continuous effort to improve the quality and reliability of our products, but
semiconductor products are likely to fail with certain probability. In order to prevent any injury to
persons or damages to property resulting from such failure, customers should be careful enough to
incorporate safety measures in their design, such as redundancy feature, fire containment feature and
fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from
misuse or inappropriate use of the products.
7.Anti-radiation design is not implemented in the products described in this document.
8.Please contact Ricoh sales representatives should you have any questions or comments concerning
the products or the technical information.
Ricoh is committed to reducing the environmental loading materials in electrical devices
with a view to contributing to the protection of human health and the environment.
Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since
Halogen Free
April 1, 2012.
http://www.e-devices.ricoh.co.jp/en/
Sales & Support Offices
RICOH ELECTRONIC DEVICES CO., LTD.
Higashi-Shinagawa Office (International Sales)
3-32-3, Higashi-Shinagawa, Shinagawa-ku, Tokyo 140-8655, Japan
Phone: +81-3-5479-2857 Fax: +81-3-5479-0502
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