2N4400BU [ROCHESTER]

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3;
2N4400BU
型号: 2N4400BU
厂家: Rochester Electronics    Rochester Electronics
描述:

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3

文件: 总11页 (文件大小:877K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBT4400  
2N4400  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 83  
E
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 500 mA.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N4400  
*MMBT4400  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
2001 Fairchild Semiconductor Corporation  
2N4400/MMBT4400, Rev A  
NPN General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICEX  
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0  
40  
60  
V
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I = 100 A, I = 0  
µ
C
E
6.0  
I = 100 A, I = 0  
µ
E
C
VCE = 35 V, VEB = 0.4 V  
VCE = 35 V, VEB = 0.4 V  
0.1  
0.1  
A
A
µ
µ
IBL  
Emitter Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
VCE = 1.0 V, IC = 1.0 mA  
20  
40  
50  
20  
VCE = 1.0 V, IC = 10 mA  
VCE = 1.0 V, IC = 150 mA  
VCE = 2.0 V, IC = 500 mA  
150  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC = 150 mA, IB =15 mA  
IC = 500 mA, IB = 50 mA  
IC = 150 mA, IB =15 mA  
IC = 500 mA, IB = 50 mA  
0.40  
0.75  
0.95  
1.2  
V
VCE(sat)  
VBE(sat)  
V
V
V
0.75  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 5.0 V, f = 140 kHz  
VEB = 0.5 V, f = 140 kHz  
6.5  
30  
pF  
pF  
Cob  
Cib  
hfe  
Input Capacitance  
Small-Signal Current Gain  
IC = 20 mA, VCE = 10 V,  
f = 100 MHz  
2.0  
Small-Signal Current Gain  
Input Impedance  
VCE = 10 V, IC = 1.0 mA,  
20  
0.5  
0.1  
1.0  
250  
7.5  
8.0  
30  
hfe  
hie  
hre  
hoe  
f = 1.0 kHz  
K
x 10-4  
Voltage Feedback Ratio  
Output Admittance  
mhos  
µ
SWITCHING CHARACTERISTICS  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
VCC = 30 V, IC = 150 mA,  
IB1 = 15 mA ,VEB = 2 V  
VCC = 30 V, IC = 150 mA  
IB1 = IB2 = 15 mA  
15  
ns  
ns  
ns  
ns  
td  
tr  
20  
225  
30  
ts  
tf  
*Pulse Test: Pulse Width £300 ms, Duty Cycle £2.0%  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics  
Typical Pulsed Current Gain  
vs Collector Current  
Collector-Emitter Saturation  
Voltage vs Collector Current  
500  
400  
300  
200  
100  
0
0.4  
V
= 5V  
CE  
β = 10  
0.3  
0.2  
0.1  
125 °C  
25 °C  
125 °C  
25 °C  
- 40 °C  
- 40 °C  
0.1  
0.3  
1
3
10  
30  
100 300  
1
10  
100  
500  
IC - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base-Emitter ON Voltage vs  
Collector Current  
1
0.8  
0.6  
0.4  
0.2  
β = 10  
V
= 5V  
1
CE  
- 40 °C  
25 °C  
- 40 °C  
0.8  
0.6  
0.4  
25 °C  
125 °C  
125 °C  
1
10  
100  
500  
0.1  
1
10  
25  
I
C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Emitter Transition and Output  
Capacitance vs Reverse Bias Voltage  
Collector-Cutoff Current  
vs Ambient Temperature  
500  
100  
20  
16  
12  
8
f = 1 MHz  
V
= 40V  
CB  
10  
1
C
te  
0.1  
C
ob  
4
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
TA - AMBIENT TEMPERATURE (°C)  
REVERSE BIAS VOLTAGE (V)  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Turn On and Turn Off Times  
Switching Times  
vs Collector Current  
vs Collector Current  
400  
400  
I
I
c
c
IB1= IB2  
=
IB1= IB2  
=
10  
10  
320  
240  
160  
80  
320  
240  
160  
80  
V
= 25 V  
V
= 25 V  
cc  
cc  
t
s
t
r
t
off  
t
f
t
on  
t
d
0
0
10  
100  
1000  
10  
100  
1000  
I
- COLLECTOR CURRENT (mA)  
I
- COLLECTOR CURRENT (mA)  
C
C
Power Dissipation vs  
Ambient Temperature  
1
SOT-223  
0.75  
TO-92  
0.5  
SOT-23  
0.25  
0
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
NPN General Purpose Amplifier  
(continued)  
Typical Common Emitter Characteristics (f = 1.0kHz)  
Common Emitter Characteristics  
Common Emitter Characteristics  
2.4  
2
8
6
4
2
0
V
I
= 10 V  
= 10 mA  
V
T
= 10 V  
= 25oC  
CE  
CE  
h
C
A
re  
h
ie  
h
fe  
1.6  
1.2  
0.8  
0.4  
0
h
oe  
h
oe  
h
h
re  
fe  
h
ie  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
TA - AMBIENT TEMPERATURE (o C)  
I C - COLLECTOR CURRENT (mA)  
Common Emitter Characteristics  
1.3  
1.25  
1.2  
I
T
= 10 mA  
= 25oC  
C
A
h
fe  
1.15  
1.1  
h
ie  
1.05  
1
h
h
0.95  
0.9  
re  
0.85  
0.8  
oe  
0.75  
0
5
10  
15  
20  
25  
30  
35  
VCE - COLLECTOR VOLTAGE (V)  
NPN General Purpose Amplifier  
(continued)  
Test Circuits  
30 V  
200 Ω  
16 V  
1.0 KΩ  
0
200ns  
500 Ω  
FIGURE 1: Saturated Turn-On Switching Timer  
6.0 V  
- 1.5 V  
NOTE: BVEBO= 5.0 V  
37 Ω  
1k  
30 V  
1.0 KΩ  
0
200ns  
50 Ω  
FIGURE 2: Saturated Turn-Off Switching Time  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  
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This device is designed for use as general purpose amplifiers and switches  
requiring collector currents to 500 mA.  
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Product status/pricing/packaging  
Product  
Product status  
Pb-free Status Pricing* Package type Leads Packing method  
Package Marking Convention**  
2N4400BU  
Full Production  
$0.026  
TO-92  
3
BULK  
Line 1: 2N Line 2: 4400 Line 3: -&3  
2N4400TA  
Full Production  
$0.026  
TO-92  
3
AMMO  
Line 1: 2N Line 2: 4400 Line 3: -&3  
2N4400TAR  
2N4400TF  
Full Production  
Full Production  
$0.026  
$0.026  
TO-92  
TO-92  
3
3
AMMO  
Line 1: 2N Line 2: 4400 Line 3: -&3  
Line 1: 2N Line 2: 4400 Line 3: -&3  
TAPE REEL  
2N4400TFR  
Full Production  
Full Production  
$0.026  
N/A  
TO-92  
TO-92  
3
3
TAPE REEL  
TAPE REEL  
Line 1: 2N Line 2: 4400 Line 3: -&3  
Line 1: (Fairchild logo)  
$Y  
&
Z
(Asm. Plant Code)  
2N4400_D81Z  
& (3-Digit Date Code)  
3
Line 2: 2N Line 3: 4400  
* Fairchild 1,000 piece Budgetary Pricing  
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please  
contact a Fairchild distributor to obtain samples  
Indicates product with Pb-free second-level interconnect. For more information click here.  
Package marking information for product 2N4400 is available. Click here for more information .  
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Models  
Package & leads  
TO-92-3  
Condition  
Temperature range  
PSPICE  
Software version  
Revision date  
Electrical  
25°C  
N/A  
N/A  
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Click on a product for detailed qualification data  
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2N4400BU  
2N4400TA  
2N4400TAR  
2N4400TF  
2N4400TFR  
2N4400_D81Z  
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