ADG821BRM [ROCHESTER]

DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MO-187AA, MSOP-8;
ADG821BRM
型号: ADG821BRM
厂家: Rochester Electronics    Rochester Electronics
描述:

DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO8, MO-187AA, MSOP-8

光电二极管
文件: 总13页 (文件大小:1123K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
<1 Ω CMOS, 1.8 V to 5.5 V,  
Dual SPST Switches  
ADG821/ADG822/ADG823  
FUNCTIONAL BLOCK DIAGRAMS  
FEATURES  
0.8 Ω maximum on resistance @ 125°C  
0.3 Ω maximum on resistance flatness @ 125°C  
1.8 V to 5.5 V single supply  
200 mA current carrying capability  
Automotive temperature range: −40°C to +125°C  
Rail-to-rail operation  
ADG821  
ADG822  
S1  
D1  
S1  
D1  
IN1  
IN1  
D2  
S2  
D2  
S2  
IN2  
IN2  
8-lead MSOP  
33 ns switching times  
Typical power consumption: <0.01 μW  
TTL-/CMOS-compatible inputs  
SWITCHES SHOWN FOR  
A LOGIC 0 INPUT.  
SWITCHES SHOWN FOR  
A LOGIC 0 INPUT.  
Figure 1.  
Figure 2.  
Pin-compatible with the ADG721/ADG722/ADG723  
ADG823  
APPLICATIONS  
S1  
D1  
IN1  
Power routing  
Battery-powered systems  
Communication systems  
Data acquisition systems  
Audio and video signal routing  
Cellular phones  
D2  
S2  
IN2  
SWITCHES SHOWN FOR  
A LOGIC 0 INPUT.  
Modems  
Figure 3.  
PCMCIA cards  
Hard drives  
Relay replacement  
GENERAL DESCRIPTION  
PRODUCT HIGHLIGHTS  
The ADG821/ADG822/ADG823 are monolithic CMOS single-  
pole, single-throw (SPST) switches. These switches are designed  
on an advanced submicron process that provides low power  
dissipation, yet gives high switching speed, low on resistance,  
and low leakage currents.  
1. Very Low On Resistance: 0.5 Ω typ.  
2. On Resistance Flatness (RFLAT(ON)): 0.15 Ω typ.  
3. Automotive Temperature Range: −40°C to +125°C.  
4. Current Carrying Capability: 200 mA.  
5. Low Power Dissipation. CMOS construction ensures low  
power dissipation.  
The ADG821/ADG822/ADG823 are designed to operate from  
a single 1.8 V to 5.5 V supply, making them ideal for use in  
battery-powered instruments.  
6. 8-Lead MSOP.  
Each switch of the ADG821/ADG822/ADG823 conducts  
equally well in both directions when on. The ADG821/  
ADG822/ADG823 contain two independent SPST switches.  
The ADG821 and ADG822 differ only in that both switches are  
normally open and normally closed, respectively. In the ADG823,  
Switch 1 is normally open and Switch 2 is normally closed. The  
ADG823 exhibits break-before-make switching action.  
The ADG821/ADG822/ADG823 are available in an  
8-lead MSOP.  
Rev. A  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
www.analog.com  
Fax: 781.461.3113 ©2002–2008 Analog Devices, Inc. All rights reserved.  
 
 
 
ADG821/ADG822/ADG823  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
ESD Caution...................................................................................5  
Pin Configuration and Function Descriptions..............................6  
Typical Performance Characteristics ..............................................7  
Test Circuits........................................................................................9  
Terminology.................................................................................... 11  
Outline Dimensions....................................................................... 12  
Ordering Guide .......................................................................... 12  
Applications....................................................................................... 1  
Functional Block Diagrams............................................................. 1  
General Description......................................................................... 1  
Product Highlights ........................................................................... 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
Absolute Maximum Ratings............................................................ 5  
REVISION HISTORY  
4/08—Rev. 0 to Rev. A  
Updated Format..................................................................Universal  
Added Table 6.................................................................................... 6  
Updated Outline Dimensions....................................................... 12  
Changes to Ordering Guide .......................................................... 12  
8/02—Revision 0: Initial Version  
Rev. A | Page 2 of 12  
 
ADG821/ADG822/ADG823  
SPECIFICATIONS  
VDD = 5 V 10%, GND = 0 V; TA = −40°C to +125°C, unless otherwise noted.  
Table 1.  
−40°C to  
+85°C  
−40°C to  
+125°C1  
Parameter  
25°C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
0.8  
V
On Resistance (RON  
)
0.5  
0.6  
0.16  
0.2  
0.15  
0.23  
Ω typ  
Ω max  
Ω typ  
Ω max  
Ω typ  
Ω max  
VS = 0 V to VDD, IS = 100 mA, see Figure 17  
VS = 0 V to VDD, IS = 100 mA  
0.7  
On Resistance Match Between  
Channels (ΔRON  
)
0.25  
0.26  
0.28  
On Resistance Flatness (RFLAT(ON)  
)
VS = 0 V to VDD, IS = 100 mA  
0.3  
LEAKAGE CURRENTS  
VDD = 5.5 V  
Source Off Leakage, IS (Off)  
0.01  
0.25  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
nA typ  
nA max  
VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18  
3
3
3
25  
25  
25  
Drain Off Leakage, ID (Off)  
VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18  
VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 19  
Channel On Leakage, ID, IS (On)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.0  
0.8  
V min  
V max  
IINL or IINH  
0.005  
4
μA typ  
μA max  
pF typ  
VIN = VINL or VINH  
0.1  
Digital Input Capacitance, CIN  
DYNAMIC CHARACTERISTICS2  
tON  
33  
45  
11  
16  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
pC typ  
dB typ  
dB typ  
RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20  
RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20  
48  
19  
52  
21  
1
tOFF  
Break-Before-Make Time Delay, tBBM 32  
(ADG823 Only)  
Charge Injection  
Off Isolation  
Channel-to-Channel Crosstalk  
Bandwidth −3 dB  
CS (Off)  
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V,  
see Figure 21  
VS = 2.5 V; RS = 0 Ω, CL = 1 nF, see Figure 22  
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23  
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 24  
15  
−52  
−82  
24  
85  
98  
MHz typ RL = 50 Ω, CL = 5 pF, see Figure 25  
pF typ  
pF typ  
pF typ  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
CD (Off)  
CD, CS (On)  
230  
POWER REQUIREMENTS  
IDD  
VDD = 5.5 V, digital inputs = 0 V or 5.5 V  
0.001  
μA typ  
1.0  
2.0  
ꢀA max  
1 On resistance parameters tested with IS = 10 mA.  
2 Guaranteed by design, not subject to production test.  
Rev. A | Page 3 of 12  
 
ADG821/ADG822/ADG823  
VDD = 2.7 V to 3.6 V, GND = 0 V, TA = −40°C to +125°C, unless otherwise noted.  
Table 2.  
−40°C to  
+85°C  
−40°C to  
+125°C1  
Parameter  
25°C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
1.6  
V
On Resistance (RON  
)
0.7  
1.4  
0.16  
0.2  
0.3  
Ω typ  
Ω max  
Ω typ  
Ω max  
Ω typ  
VS = 0 V to VDD, IS = 100 mA, see Figure 17  
VS = 0 V to VDD, IS = 100 mA  
1.5  
On Resistance Match Between  
Channels (ΔRON  
)
0.25  
0.28  
0.33  
On Resistance Flatness (RFLAT(ON)  
)
VS = 0 V to VDD, IS = 100 mA  
VDD = 3.6 V  
LEAKAGE CURRENTS  
Source Off Leakage, IS (Off)  
0.01  
0.25  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
nA typ  
nA max  
VS = 3.3 V/1 V, VD = 1 V/3.3 V, see Figure 18  
3
3
3
15  
25  
25  
Drain Off Leakage, ID (Off)  
VS = 3.3 V/1 V, VD = 1 V/3.3 V, see Figure 18  
VS = VD = 1 V, or 3.3 V, see Figure 19  
Channel On Leakage, ID, IS (On)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.0  
0.8  
V min  
V max  
IINL or IINH  
0.005  
4
ꢀA typ  
ꢀA max  
pF typ  
VIN = VINL or VINH  
0.1  
Digital Input Capacitance, CIN  
DYNAMIC CHARACTERISTICS2  
tON  
48  
67  
12  
18  
40  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
pC typ  
dB typ  
dB typ  
MHz typ  
pF typ  
pF typ  
pF typ  
RL = 50 Ω, CL = 35 pF, VS = 1.5 V, see Figure 20  
RL = 50 Ω, CL = 35 pF, VS = 1.5 V, see Figure 20  
74  
20  
78  
23  
1
tOFF  
Break-Before-Make Time Delay, tBBM  
(ADG823 Only)  
Charge Injection  
Off Isolation  
Channel-to-Channel Crosstalk  
Bandwidth −3 dB  
CS (Off)  
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 1.5 V,  
see Figure 21  
2
VS = 1.5 V; RS = 0 Ω, CL = 1 nF, see Figure 22  
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23  
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 24  
RL = 50 Ω, CL = 5 pF, see Figure 25  
f = 1 MHz  
−52  
−82  
24  
85  
98  
CD (Off)  
CD, CS (On)  
f = 1 MHz  
f = 1 MHz  
230  
POWER REQUIREMENTS  
IDD  
VDD = 3.6 V, digital inputs = 0 V or 3.6 V  
0.001  
ꢀA typ  
1.0  
2.0  
ꢀA max  
1 On resistance parameters tested with IS = 10 mA.  
2 Guaranteed by design, not subject to production test.  
Rev. A | Page 4 of 12  
ADG821/ADG822/ADG823  
ABSOLUTE MAXIMUM RATINGS  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
TA = 25°C, unless otherwise noted.  
Table 3.  
Parameter  
Rating  
VDD to GND  
−0.3 V to +7 V  
−0.3 V to VDD + 0.3 V or 30 mA,  
whichever occurs first  
−0.3 V to VDD + 0.3 V or 30 mA,  
whichever occurs first  
Analog Inputs1  
Digital Inputs1  
Table 4. Truth Table for the ADG821/ADG822  
ADG821 INx  
ADG822 INx  
Switch x Condition  
Peak Current, S or D  
400 mA (pulsed at 1 ms,  
10% duty cycle maximum)  
200 mA  
0
1
1
0
Off  
On  
Continuous Current, S or D  
Operating Temperature Range  
Automotive  
Storage Temperature Range  
Junction Temperature (TJ max)  
Package Power Dissipation  
8-Lead MSOP Thermal Impedance  
θJA  
−40°C to +125°C  
−65°C to +150°C  
150°C  
Table 5. Truth Table for the ADG823  
IN1  
IN2  
Switch S1  
Switch S2  
On  
0
0
Off  
(TJ max − TA)/θJA  
0
1
Off  
Off  
On  
Off  
1
0
On  
206°C/W  
44°C/W  
300°C  
1
1
On  
θJC  
Lead Temperature,  
Soldering (10 sec)  
ESD CAUTION  
IR Reflow, Peak Temperature (<20 235°C  
sec)  
1 Overvoltages at IN, S, or D are clamped by internal diodes. Current should be  
limited to the maximum ratings given.  
Rev. A | Page 5 of 12  
 
 
ADG821/ADG822/ADG823  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
1
2
3
4
8
7
6
5
S1  
D1  
V
DD  
ADG821/  
ADG822/  
ADG823  
IN1  
D2  
S2  
IN2  
TOP VIEW  
(Not to Scale)  
GND  
Figure 4. Pin Configuration  
Table 6. Pin Function Descriptions  
Pin No.  
Mnemonic  
Description  
1
2
3
4
5
6
7
8
S1  
D1  
IN2  
GND  
S2  
D2  
IN1  
VDD  
Source Terminal. This pin can be an input or output.  
Drain Terminal. This pin can be an input or output.  
Logic Control Input.  
Ground (0 V) Reference.  
Source Terminal. This pin can be an input or output.  
Drain Terminal. This pin can be an input or output.  
Logic Control Input.  
Most Positive Power Supply Potential.  
Rev. A | Page 6 of 12  
 
ADG821/ADG822/ADG823  
TYPICAL PERFORMANCE CHARACTERISTICS  
0.8  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
T
= 25°C  
A
V
= 2.7V  
DD  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
= 3.0V  
= 3.3V  
DD  
+125°C  
+85°C  
V
DD  
V
= 4.5V  
DD  
+25°C  
V
= 5.0V  
–40°C  
DD  
V
V
= 5.5V  
DD  
V
= 3V  
DD  
0
1
2
3
4
5
0
0.5  
1.0  
1.5  
V , V (V)  
D
2.0  
2.5  
3.0  
, V (V)  
D
S
S
Figure 5. On Resistance vs. VD, VS  
Figure 8. On Resistance vs. VD, VS for Different Temperatures, VDD = 3 V  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
8
T
= 25°C  
V
DD  
= 5V, 3V  
A
7
6
I , I (ON)  
S
D
5
V
= 1.8V  
DD  
4
I
(OFF)  
D
3
2
1
0
I
(OFF)  
S
–1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
120 125  
V
, V (V)  
TEMPERATURE (°C)  
D
S
Figure 6. On Resistance vs. VD, VS; VDD = 1.8 V  
Figure 9. Leakage Current vs. Temperature  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
200  
150  
100  
50  
T
= 25°C  
V
= 5V  
A
DD  
+125°C  
+85°C  
V
= 3V  
DD  
0
V
= 5V  
DD  
–50  
–100  
–150  
–200  
+25°C  
–40°C  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
(V)  
3.0  
3.5  
4.0  
4.5  
5.0  
V
, V (V)  
V
D
S
S
Figure 7. On Resistance vs. VD, VS for Different Temperatures, VDD = 5 V  
Figure 10. Charge Injection vs. Source Voltage  
Rev. A | Page 7 of 12  
 
ADG821/ADG822/ADG823  
60  
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
–90  
–100  
–110  
T
= 25°C  
A
V
= 3V  
DD  
50  
40  
30  
20  
10  
0
V
= 5V  
tON  
DD  
V
= 3V, 5V  
tOFF  
DD  
–40  
–20  
0
20  
40  
60  
80  
100  
120  
0.1  
1
10  
100  
TEMPERATURE (°C)  
FREQUENCY (MHz)  
Figure 11. tON/tOFF vs. Temperature  
Figure 14. Crosstalk vs. Frequency  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
–10  
–20  
–30  
–40  
–50  
–60  
–70  
V
= 3V, 5V  
DD  
= 25°C  
T
A
V
RISING  
IN  
V
FALLING  
IN  
0
1
2
3
4
5
6
0.2  
1
10  
100  
V
(V)  
FREQUENCY (MHz)  
DD  
Figure 12. Off Isolation vs. Frequency  
Figure 15. Logic Threshold Voltage vs. Supply Voltage  
0
–1  
–2  
–3  
–4  
–5  
–6  
–7  
–8  
–9  
0.050  
0.045  
0.040  
0.035  
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
V
= 5V  
S
V p-p = 2V  
= 600  
R
L
V
= 3V, 5V  
= 25°C  
DD  
T
A
0.1  
1
10  
100  
20  
100  
1k  
10k  
FREQUENCY (MHz)  
FREQUENCY (Hz)  
Figure 16. THD vs. Frequency  
Figure 13. On Response vs. Frequency  
Rev. A | Page 8 of 12  
ADG821/ADG822/ADG823  
TEST CIRCUITS  
I
DS  
V1  
I
(ON)  
A
I
(OFF)  
A
I
(OFF)  
A
D
S
D
S
D
S
D
S
D
NC  
V
V
D
V
V
D
R
= V1/I  
S
S
ON  
DS  
NC = NO CONNECT  
Figure 17. On Resistance  
Figure 18. Off Leakage  
Figure 19. On Leakage  
V
DD  
DD  
0.1µF  
ADG821  
ADG822  
V
50%  
50%  
50%  
IN  
V
V
L
OUT  
S
D
V
50%  
90%  
IN  
R
50  
C
L
V
S
35pF  
IN  
90%  
V
OUT  
GND  
tOFF  
tON  
Figure 20. Switching Times  
V
DD  
V
0.1µF  
IN  
50%  
50%  
0V  
0V  
V
90%  
90%  
DD  
V
V
OUT1  
OUT2  
S1  
D1  
D2  
V
V
V
S1  
OUT1  
C
R
L1  
35pF  
L1  
50  
S2  
V
S2  
OUT2  
C
R
90%  
90%  
L2  
35pF  
L2  
50ꢀ  
0V  
IN1,  
IN2  
V
IN  
GND  
tBBM  
tBBM  
Figure 21. Break-Before-Make Time Delay, tBBM (ADG823 only)  
V
DD  
DD  
V
SW ON  
SW OFF  
V
R
OUT  
S
S
D
V
IN  
C
1nF  
L
V
S
IN  
V
OUT  
ΔV  
GND  
OUT  
Q
= C × ΔV  
L
OUT  
INJ  
Figure 22. Charge Injection  
Rev. A | Page 9 of 12  
 
 
 
 
 
ADG821/ADG822/ADG823  
V
V
DD  
DD  
0.1µF  
0.1µF  
NETWORK  
ANALYZER  
NETWORK  
ANALYZER  
V
V
DD  
DD  
S
S
50  
50  
50ꢀ  
IN  
IN  
V
S
V
S
D
D
V
V
OUT  
OUT  
V
V
IN  
IN  
R
50ꢀ  
R
50ꢀ  
L
L
GND  
GND  
V
WITH SWITCH  
V
OUT  
OUT  
INSERTION LOSS = 20 log  
OFF ISOLATION = 20 log  
V
WITHOUT SWITCH  
V
S
OUT  
Figure 23. Off Isolation  
Figure 25. Bandwidth  
V
DD  
0.1µF  
NETWORK  
ANALYZER  
V
DD  
V
OUT  
S1  
R
L
50ꢀ  
D
R
50ꢀ  
S2  
IN  
50ꢀ  
V
S
GND  
V
OUT  
CHANNEL-TO-CHANNEL CROSSTALK = 20 log  
V
S
Figure 24. Channel-to-Channel Crosstalk  
Rev. A | Page 10 of 12  
 
 
ADG821/ADG822/ADG823  
TERMINOLOGY  
IINL (IINH  
Input current of the digital input.  
)
VDD  
Most positive power supply potential.  
CS (Off)  
Off switch source capacitance.  
GND  
Ground (0 V) reference.  
CD (Off)  
Off switch drain capacitance.  
IDD  
Positive supply current.  
CD, CS (On)  
On switch capacitance.  
S
Source terminal. May be an input or output.  
tON  
D
Delay between applying the digital control input and the output  
switching on.  
Drain terminal. May be an input or output.  
IN  
tOFF  
Logic control input.  
Delay between applying the digital control input and the output  
switching off.  
RON  
Ohmic resistance between Terminal D and Terminal S.  
tBBM  
ΔRON  
Off time or on time measured between the 90% points of both  
switches, when switching from one address state to another.  
On resistance match between any two channels (that is,  
RON max − RON min).  
Charge Injection  
Charge injection is a measure of the glitch impulse transferred  
from the digital input to the analog output during switching.  
RFLAT(ON)  
Flatness is defined as the difference between the maximum and  
minimum value of on resistance as measured over the specified  
analog signal range.  
Crosstalk  
Crosstalk is a measure of unwanted signal that is coupled  
through from one channel to another as a result of parasitic  
capacitance.  
IS (Off)  
Source leakage current with the switch off.  
ID (Off)  
Off Isolation  
Drain leakage current with the switch off.  
A measure of unwanted signal coupling through an off switch.  
ID, IS (On)  
Bandwidth  
Channel leakage current with the switch on.  
The frequency at which the output is attenuated by −3 dBs.  
VD, VS  
On Response  
The frequency response of the on switch.  
Analog voltage on Terminal D and Terminal S.  
VINL  
Insertion Loss  
The loss due to the on resistance of the switch.  
Maximum input voltage for Logic 0.  
VINH  
Minimum input voltage for Logic 1.  
Rev. A | Page 11 of 12  
 
ADG821/ADG822/ADG823  
OUTLINE DIMENSIONS  
3.20  
3.00  
2.80  
8
1
5
4
5.15  
4.90  
4.65  
3.20  
3.00  
2.80  
PIN 1  
0.65 BSC  
0.95  
0.85  
0.75  
1.10 MAX  
0.80  
0.60  
0.40  
8°  
0°  
0.15  
0.00  
0.38  
0.22  
0.23  
0.08  
SEATING  
PLANE  
COPLANARITY  
0.10  
COMPLIANT TO JEDEC STANDARDS MO-187-AA  
Figure 26. 8-Lead Mini Small Outline Package [MSOP]  
(RM-8)  
Dimensions shown in millimeters  
ORDERING GUIDE  
Model  
ADG821BRM  
Temperature Range  
Package Description  
Package Option  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
RM-8  
Branding  
SQB  
SQB  
S0P  
S0P  
SRB  
SRB  
SRB  
S1J  
S1J  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
−40°C to +125°C  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
8-Lead Mini Small Outline Package [MSOP]  
ADG821BRM-REEL  
ADG821BRMZ1  
ADG821BRMZ-REEL71  
ADG822BRM  
ADG822BRM-REEL  
ADG822BRM-REEL7  
ADG822BRMZ1  
ADG822BRMZ-REEL71  
ADG823BRM  
SSB  
SSB  
SSB#  
SSB#  
ADG823BRM-REEL  
ADG823BRMZ1  
ADG823BRMZ-REEL71  
RM-8  
1 Z = RoHS Compliant Part, # denotes RoHS compliant product may be top or bottom marked.  
©2002–2008 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D02851-0-4/08(A)  
Rev. A | Page 12 of 12  
 

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