ADM207EARSZ-REEL [ROCHESTER]
TRIPLE LINE TRANSCEIVER, PDSO24, LEAD FREE, MO-150AG, SSOP-24;
| 型号： | ADM207EARSZ-REEL |
| 厂家： | 
Rochester Electronics |
| 描述： | TRIPLE LINE TRANSCEIVER, PDSO24, LEAD FREE, MO-150AG, SSOP-24 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总21页 (文件大小：951K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
aEMI-EMC-Compliant, ꢀ15 kV ESD Protected,
RS-232 Line Drivers/Receivers
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Complies with 89/336/EEC EMC Directive
ESD Protection to IEC1000-4-2 (801.2)
ꢀ8 kV: Contact Discharge
5V INPUT
+5V TO +10V
VOLTAGE
DOUBLER
12
14
11
13
C1+
C1–
V
CC
0.1ꢁF
0.1ꢁF
6.3V
0.1ꢁF
10V
V+
ꢀ15 kV: Air-Gap Discharge
15
16
+10V TO –10V
VOLTAGE
INVERTER
17
C2+
C2–
ꢀ15 kV: Human Body Model
Fast Transient Burst (EFT) Immunity (IEC1000-4-4)
Low EMI Emissions (EN55022)
Eliminates Costly TranZorbs®
230 kbits/s Data Rate Guaranteed
Single 5 V Power Supply
Shutdown Mode 1 ꢁW
Plug-In Upgrade for MAX2xxE
Space Saving TSSOP Package Available
V–
0.1ꢁF
10V
0.1ꢁF
10V
2
3
7
6
T1
T1
T1
OUT
IN
T2
T2
T3
T2
T3
OUT
IN
CMOS
EIA/TIA-232
OUTPUTS
INPUTS*
20
1
T3
R3
OUT
IN
28
9
21
8
T4
T4
T4
OUT
IN
R1
R1
R1
IN
OUT
OUT
OUT
4
5
R2
R3
R2
R3
R2
IN
CMOS
OUTPUTS
EIA/TIA-232
INPUTS**
APPLICATIONS
Laptop Computers
Notebook Computers
Printers
Peripherals
Modems
26
22
19
27
23
18
IN
R4
R4
R5
R4
R5
IN
OUT
R5
OUT
IN
SHDN (ADM211E)
SHDN (ADM213E)
EN (ADM211E)
EN (ADM213E)
24
25
ADM211E
ADM213E
GND
10
NOTES:
GENERAL DESCRIPTION
* INTERNAL 400kꢂ PULL-UP RESISTOR ON EACH CMOS INPUT
** INTERNAL 5kꢂ PULL-DOWN RESISTOR ON EACH RS-232 INPUT
The ADM2xxE is a family of robust RS-232 and V.28 interface
devices that operates from a single 5 V power supply. These prod-
ucts are suitable for operation in harsh electrical environments
and are compliant with the EU directive on EMC (89/336/EEC).
The level of emissions and immunity are both in compliance.
EM immunity includes ESD protection in excess of 15 kV on all
I-O lines (1000-4-2), fast transient burst protection (1000-4-4) and
radiated immunity (1000-4-3). EM emissions include radiated
and conducted emissions as required by Information Technology
Equipment EN55022, CISPR22.
charge pump, all transmitters, and three of the five receivers are
disabled. The remaining two receivers remain active, thereby
allowing monitoring of peripheral devices. This feature allows
the device to be shut down until a peripheral device begins
communication. The active receivers can alert the processor
which can then take the ADM213E out of the shutdown mode.
Operating from a single 5 V supply, four external 0.1 µF capaci-
tors are required.
All devices fully conform to the EIA-232E and CCITT V.28
specifications and operate at data rates up to 230 kbps.
The ADM207E and ADM208E are available in 24-lead DIP, SO,
SSOP, and TSSOP packages. The ADM211E and ADM213E
are available in 28-lead SO, SSOP, and TSSOP packages.
Shutdown and enable control pins are provided on some of the
products. See Table I.
All products are backward-compatible with earlier ADM2xx
products, facilitating easy upgrading of older designs.
The shutdown function on the ADM211E disables the charge
pump and all transmitters and receivers. On the ADM213E the
Table I. Selection Table
Receivers ESD Protection Shutdown
Model
Supply Voltage
Drivers
Enable
Packages
ADM206E
ADM207E
ADM208E
ADM211E
ADM213E
5 V
5 V
5 V
5 V
5 V
4
5
4
4
4
3
3
4
5
5
15 kV
15 kV
15 kV
15 kV
15 kV
Yes
No
No
Yes
Yes
No
No
Yes
R-24
N, R, RS, RU-24
N, R, RS, RU-24
R, RS, RU-28
R, RS, RU-28
Yes (SD)*
Yes (EN)
*Two receivers active.
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/461-3113
www.analog.com
© 2005 Analog Devices, Inc. All rights reserved.
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E–SPECIFICATIONS
(VCC = 5.0 V ꢀ 10%, C1–C4 = 0.1 ꢁF. All specifications TMIN to TMAX unless otherwise noted.)
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
Operating Voltage Range
VCC Power Supply Current
4.5
5.0
3.5
5.5
13
V
mA
No Load
Shutdown Supply Current
0.2
10
10
µA
Input Pull-Up Current
25
0.8
µA
V
V
V
V
V
µA
TIN = GND
TIN, EN, EN, SHDN, SHDN,
TIN
EN, EN, SHDN, SHDN
IOUT = 1.6 mA
IOUT = –40 µA
EN = VCC, EN = GND, 0 V ≤ ROUT ≤ VCC
Input Logic Threshold Low, VINL
Input Logic Threshold High, VINH
Input Logic Threshold High, VINH
CMOS Output Voltage Low, VOL
CMOS Output Voltage High, VOH
CMOS Output Leakage Current
2.0
2.0
0.4
3.5
0.05
10
EIA-232 Input Voltage Range*
EIA-232 Input Threshold Low
EIA-232 Input Threshold High
EIA-232 Input Hysteresis
EIA-232 Input Resistance
Output Voltage Swing
–30
0.8
+30
V
V
V
V
kΩ
V
1.3
2.0
0.65
5
2.4
7
3
TA = 0°C to 85°C
5.0
9.0
All Transmitter Outputs
Loaded with 3 kΩ to Ground
Transmitter Output Resistance
RS-232 Output Short Circuit Current
300
6
Ω
mA
VCC = 0 V, VOUT = 2 V
20
60
2
Maximum Data Rate
Receiver Propagation Delay
TPHL, TPLH
Receiver Output Enable Time, tER
Receiver Output Disable Time, tDR
Transmitter Propagation Delay
TPHL, TPLH
230
kbps
RL = 3 kΩ to 7 kΩ, CL = 50 pF to 2500 pF
0.4
120
120
µs
ns
ns
CL = 150 pF
1
8
µs
V/µs
RL = 3 kΩ, CL = 2500 pF
RL = 3 kΩ, CL = 50 pF to 2500 pF
Measured from +3 V to –3 V or
–3 V to +3 V
Transition Region Slew Rate
ESD Protection (I-O Pins)
EMI Immunity
15
15
8
kV
kV
kV
V/m
Human Body Model
IEC1000-4-2 Air Discharge
IEC1000-4-2 Contact Discharge
IEC1000-4-3
10
*Guaranteed by design.
Specifications subject to change without notice.
Table II. ADM211E Truth Table
Table III. ADM213E Truth Table
SHDN
EN
Status
TOUT1-4
ROUT1-5
SHDN EN
Status
TOUT1-4
ROUT1-3 ROUT4-5
0
0
Normal
Operation
Normal
Operation
Shutdown
Enabled
Enabled
0
0
1
0
1
0
Shutdown Disabled
Shutdown Disabled
Disabled Disabled
Disabled Enabled
Disabled Disabled
0
1
Enabled
Disabled
Disabled
Disabled
Normal
Enabled
Operation
Normal
1
X
1
1
Enabled
Enabled
Enabled
Operation
X = Don’t Care.
–2–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
ABSOLUTE MAXIMUM RATINGS*
(TA = 25°C unless otherwise noted.)
RS-24 SSOP (Derate 12 mW/°C above 70°C) . . . . . 850 mW
RU-24 TSSOP (Derate 12 mW/°C above 70°C) . . . 900 mW
R-28 SOIC (Derate 12 mW/°C above 70°C) . . . . . . 900 mW
RS-28 SSOP (Derate 10 mW/°C above 70°C) . . . . . 900 mW
RU-28 TSSOP (Derate 12 mW/°C above 70°C) . . . 900 mW
Operating Temperature Range
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC –0.3 V) to +14 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –14 V
Input Voltages
Industrial (A Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300°C
TIN . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (V+, +0.3 V)
RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Voltages
30 V
ESD Rating (MIL-STD-883B) (I-O Pins) . . . . . . . . .
ESD Rating (IEC1000-4-2 Air) (I-O Pins) . . . . . . . .
ESD Rating (IEC1000-4-2 Contact) (I-O Pins) . . . . .
15 kV
15 kV
8 kV
TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ROUT . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC +0.3 V)
Short-Circuit Duration
15 V
TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Power Dissipation
N-24 PDIP (Derate 13.5 mW/°C above 70°C) . . 1000 mW
R-24 SOIC (Derate 12 mW/°C above 70°C) . . . . . 900 mW
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operation sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for extended
periods of time may affect reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADM206E/ADM207E/ADM208E/ADM211E/ADM213E features proprietary ESD protection
circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid performance degradation or loss
of functionality.
WARNING!
ESD SENSITIVE DEVICE
–3–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Option
Model
ADM206EAR
ADM206EAR-REEL
ADM206EARZ*
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
SOIC
SOIC
SOIC
SOIC
R-24
R-24
R-24
R-24
ADM206EARZ-REEL*
ADM207EAN
ADM207EANZ*
ADM207EAR
ADM207EAR-REEL
ADM207EARZ*
ADM207EARZ-REEL*
ADM207EARS
ADM207EARS-REEL
ADM207EARSZ*
ADM207EARSZ-REEL*
ADM207EARU
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
PDIP
PDIP
N-24
N-24
R-24
R-24
R-24
R-24
RS-24
RS-24
RS-24
RS-24
RU-24
RU-24
RU-24
SOIC
SOIC
SOIC
SOIC
SSOP
SSOP
SSOP
SSOP
TSSOP
TSSOP
TSSOP
ADM207EARU-REEL
ADM207EARU-REEL7
ADM208EAN
ADM208EANZ*
ADM208EAR
ADM208EAR-REEL
ADM208EARZ*
ADM208EARZ-REEL*
ADM208EARS
ADM208EARS-REEL
ADM208EARSZ*
ADM208EARSZ-REEL*
ADM208EARU
ADM208EARU-REEL
ADM208EARU-REEL7
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
PDIP
PDIP
N-24
N-24
R-24
R-24
R-24
R-24
RS-24
RS-24
RS-24
RS-24
RU-24
RU-24
RU-24
SOIC
SOIC
SOIC
SOIC
SSOP
SSOP
SSOP
SSOP
TSSOP
TSSOP
TSSOP
ADM211EAR
ADM211EAR-REEL
ADM211EARZ*
ADM211EARZ-REEL*
ADM211EARS
ADM211EARS-REEL
ADM211EARSZ*
ADM211EARSZ-REEL*
ADM211EARU
ADM211EARU-REEL
ADM211EARU-REEL7
ADM211EARUZ*
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
SOIC
SOIC
SOIC
SOIC
SSOP
SSOP
SSOP
SSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
R-28
R-28
R-28
R-28
RS-28
RS-28
RS-28
RS-28
RU-28
RU-28
RU-28
RU-28
RU-28
RU-28
ADM211EARUZ-REEL*
ADM211EARUZ-REEL7*
ADM213EAR
ADM213EAR-REEL
ADM213EARZ*
ADM213EARZ-REEL*
ADM213EARS
ADM213EARS-REEL
ADM213EARSZ*
ADM213EARSZ-REEL*
ADM213EARU
ADM213EARU-REEL
ADM213EARU-REEL7
ADM213EARUZ*
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
SOIC
SOIC
SOIC
SOIC
SSOP
SSOP
SSOP
SSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
R-28
R-28
R-28
R-28
RS-28
RS-28
RS-28
RS-28
RU-28
RU-28
RU-28
RU-28
RU-28
RU-28
ADM213EARUZ-REEL*
ADM213EARUZ-REEL7*
*Z = Pb-free part.
–4–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T3
T1
T2
1
2
3
4
5
6
7
8
9
24
T4
1
2
3
4
5
6
7
8
9
OUT
OUT
OUT
T3
T1
T2
24
23
22
T4
OUT
OUT
OUT
OUT
OUT
23
R2
R2
R2
R2
IN
IN
22
OUT
OUT
R1
21
T5
IN
R1
21 SD
IN
IN
R1
20 T5
OUT
R1
OUT
20
19
18
OUT
EN
ADM207E
ADM206E
T2
T1
19
18
T4
T3
IN
T2
T1
T4
TOP VIEW
IN
IN
IN
TOP VIEW
(Not to Scale)
(Not to Scale)
IN
IN
T3
IN
IN
GND
17 R3
GND
17 R3
OUT
OUT
V
R3
16
CC
V
IN
R3
V–
16
15
14
13
CC
IN
C1+ 10
V+ 11
15 V–
C1+ 10
V+ 11
C2–
14
13
C2–
C2+
12
C1–
C2+
C1– 12
Figure 1. ADM206E DIP/SOIC/SSOP Pin Configuration
Figure 3. ADM207E Pin Configuration
5V INPUT
5V INPUT
V
9
10
12
C1+
C1–
+5V TO +10V
VOLTAGE
DOUBLER
CC
0.1ꢁF
10V
0.1ꢁF
6.3V
0.1ꢁF
C1+
C1–
V
9
10
12
+5V TO +10V
VOLTAGE
DOUBLER
CC
0.1ꢁF
11
V+
0.1ꢁF
0.1ꢁF
6.3V
6.3V
V+
11
13 C2+
14 C2–
+10V TO –10V
VOLTAGE
INVERTER
0.1ꢁF
10V
V– 15
0.1ꢁF
10V
C2+
C2–
13
14
+10V TO –10V
VOLTAGE
INVERTER
0.1ꢁF
16V
V–
15
0.1ꢁF
16V
T1
T1
T1
T2
T3
T4
2
3
7
6
IN
OUT
OUT
T1
T1
T1
T2
2
3
1
7
6
IN
OUT
T2
T3
T4
T5
T2
IN
IN
IN
T2
T3
T4
T2
IN
IN
IN
OUT
TTL/CMOS
INPUTS*
CMOS
INPUTS*
RS-232
OUTPUTS
EIA/TIA-232
OUTPUTS
1
18
19
T3
T4
OUT
18
19
5
T3
T4
T3
T4
R1
R2
OUT
24
OUT
24
4
OUT
T5
21
5
T5
R1
20
4
OUT
IN
R1
R1
OUT
OUT
IN
IN
R1
R1
OUT
OUT
IN
IN
TTL/CMOS
OUTPUTS
RS-232
INPUTS**
R2
R2
23
22
CMOS
OUTPUTS
EIA/TIA-232
INPUTS**
R2
R2
23
22
R2
R3
R3
R3
17
20
16
21
IN
OUT
R3
R3
R3
17
16
IN
OUT
SD
EN
GND
ADM206E
GND
ADM207E
8
8
*INTERNAL 400kꢂ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT
**INTERNAL 5kꢂ PULL-DOWN RESISTOR ON EACH RS-232 INPUT
*INTERNAL 400kꢂ PULL-UP RESISTOR ON EACH CMOS INPUT
**INTERNAL 5kꢂ PULL-DOWN RESISTOR ON EACH RS-232 INPUT
Figure 2. ADM206E Typical Operating Circuit
Figure 4. ADM207E Typical Operating Circuit
REV. D
–5–
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
1
2
3
4
5
6
T3
28
27
26
25
24
23
22
21
T4
OUT
OUT
T1
T2
R3
R3
OUT
IN
T2
T1
1
2
24
23
22
21
20
19
T3
OUT
OUT
OUT
OUT
R3
R3
OUT
IN
SHDN
R2
R2
IN
3
IN
OUT
ADM211E
R2
EN
4
OUT
R2
T4
OUT
IN
TOP VIEW
(Not to Scale)
T1
5
T2
T1
R4
IN
T4
T3
IN
IN
IN
OUT
ADM208E
TOP VIEW
(Not to Scale)
6
R1
OUT
7
8
R4
IN
IN
OUT
R1
7
18 T2
IN
T4
IN
R1
OUT
GND
8
R4
R4
17
16
OUT
T3
IN
R1
9
20
19
18
IN
9
V
IN
CC
R5
10
11
GND
OUT
C1+
10
11
12
15 V–
R5
IN
V
CC
14
13
V+
C2–
C2+
C1+ 12
V+ 13
17 V–
C1–
16
15
C2–
C2+
14
C1–
Figure 5. ADM208E Pin Configuration
Figure 7. ADM211E Pin Configuration
5V INPUT
C1+
C1–
V
11
13
12
14
+5V TO +10V
VOLTAGE
DOUBLER
CC
0.1ꢁF
10V
0.1ꢁF
6.3V
0.1ꢁF
5V INPUT
V+
C1+
C1–
V
9
10
12
+5V TO +10V
VOLTAGE
DOUBLER
CC
C2+
C2–
0.1ꢁF
10V
15
16
+10V TO –10V
VOLTAGE
INVERTER
0.1ꢁF
6.3V
0.1ꢁF
0.1ꢁF
10V
V–
17
0.1ꢁF
10V
V+
11
C2+
C2–
13
14
+10V TO –10V
VOLTAGE
V–
0.1ꢁF
15
T1
T1
T1
T2
2
3
1
7
6
IN
OUT
0.1ꢁF
10V
INVERTER
10V
T2
T3
T4
T2
IN
IN
IN
OUT
CMOS
EIA/TIA-232
OUTPUTS
T1
T1
T1
T2
2
1
5
IN
OUT
INPUTS*
20
T3
T4
T3
T4
R1
R2
OUT
T2
T3
T4
T2
18
19
IN
IN
IN
OUT
CMOS
INPUTS*
EIA/TIA-232
OUTPUTS
21
8
28
9
OUT
T3
T4
T3
T4
R1
R2
24
OUT
R1
R1
OUT
OUT
IN
IN
21
6
20
7
OUT
R2
R2
4
5
R1
R1
OUT
OUT
IN
IN
TTL/CMOS
OUTPUTS
EIA/TIA-232
INPUTS**
R3
R4
26
22
R3
R4
R5
R3
R4
27
23
IN
OUT
R2
R2
3
4
CMOS
OUTPUTS
EIA/TIA-232
INPUTS**
IN
OUT
R3
R4
22
17
R3
R3
R4
23
16
IN
OUT
R5
R5
19
24
18
25
IN
OUT
R4
IN
OUT
EN
SHDN
GND
ADM211E
GND
ADM208E
10
8
*INTERNAL 400kꢂ PULL-UP RESISTOR ON EACH CMOS INPUT
**INTERNAL 5kꢂ PULL-DOWN RESISTOR ON EACH RS-232 INPUT
*INTERNAL 400kꢂ PULL-UP RESISTOR ON EACH CMOS INPUT
**INTERNAL 5kꢂ PULL-DOWN RESISTOR ON EACH RS-232 INPUT
Figure 6. ADM208E Typical Operating Circuit
Figure 8. ADM211E Typical Operating Circuit
–6–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
5V INPUT
1
2
T3
28
27
26
25
24
23
22
T4
OUT
OUT
T1
T2
R3
R3
C1+
C1–
V
11
13
12
14
+5V TO +10V
VOLTAGE
DOUBLER
OUT
IN
CC
0.1ꢁF
6.3V
0.1ꢁF
0.1ꢁF
3
OUT
16V
OUT
V+
4
SHDN
R2
IN
ADM213E
15 C2+
16 C2–
+10V TO –10V
VOLTAGE
INVERTER
R2
5
EN
OUT
V–
0.1ꢁF
16V
17
TOP VIEW
0.1ꢁF
16V
6
(Not to Scale)
R4
R4
*
T2
T1
IN
IN
7
*
*
OUT
IN
T1
T1
T1
T2
2
3
1
7
6
IN
IN
IN
IN
OUT
8
21 T4
R1
IN
OUT
9
20
19
18
17
16
15
T3
R1
IN
IN
T2
T3
T4
T2
OUT
10
11
12
13
14
GND
R5
R5
V–
RS-232
OUTPUTS
TTL/CMOS
OUT
1
INPUTS
V
*
CC
IN
20
21
8
T3
T4
R1
R2
T3
T4
OUT
C1+
V+
28
9
OUT
C2–
C2+
C1–
R1
R1
R2
OUT
OUT
IN
*ACTIVE IN SHUTDOWN
R2
4
5
IN
Figure 9. ADM213E Pin Configuration
TTL/CMOS
OUTPUTS
RS-232
INPUTS
26
R3
R4
R3
R3
R4
R5
27
23
IN
IN
OUT
2
3
3
3
22
R4
OUT
3
R5
R5
19
24
18
25
OUT
IN
EN
ADM213E
SHDN
GND
10
NOTES
1
INTERNAL 400kꢂ PULL-UP RESISTOR ON EACH CMOS INPUT
INTERNAL 5kꢂ PULL-DOWN RESISTOR ON EACH RS-232 INPUT
ACTIVE IN SHUTDOWN
2
3
Figure 10. ADM213E Typical Operating Circuit
PIN FUNCTION DESCRIPTIONS
Mnemonic
Function
VCC
Power Supply Input: 5 V 10%.
V+
Internally Generated Positive Supply (+9 V nominal).
Internally Generated Negative Supply (–9 V nominal).
Ground Pin. Must Be Connected to 0 V.
V–
GND
C1+, C1–
External Capacitor 1 is connected between these pins. 0.1 µF capacitor is recommended but larger capacitors up
to 47 µF may be used.
C2+, C2–
TIN
External Capacitor 2 is connected between these pins. 0.1 µF capacitor is recommended but larger capacitors up
to 47 µF may be used.
Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kΩ pull-up resistor to VCC
is connected on each input.
TOUT
RIN
Transmitter (Driver) Outputs. These are RS-232 signal levels (Typically 9 V).
Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kΩ pull-down resistor to GND is
connected on each input.
ROUT
Receiver Outputs. These are CMOS output logic levels.
EN/EN
Receiver Enable (Active High on ADM213E, Active Low on ADM211E); This input is used to enable/disable the
receiver outputs. With EN = Low ADM211E (EN = High ADM213E), the receiver outputs are enabled. With EN
= High (EN = Low ADM213E), the receiver outputs are placed in a high impedance state.
SHDN/SHDN
Shutdown Control (Active Low on ADM213E, Active High on ADM211E); Refer to Table II. In shutdown the
charge pump is disabled, the transmitter outputs are turned off and all receiver outputs (ADM211E), receivers R1,
R2, R3 (ADM213E) are placed in a high impedance state. Receivers R4 and R5 on the ADM213E continue to
operate normally during shutdown. Power consumption in shutdown for all parts reduces to 5 µW.
REV. D
–7–
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Typical Performance Characteristics
80
80
70
60
50
70
60
50
LIMIT
LIMIT
40
30
20
10
0
40
30
20
10
0
0.3
0.6
1
3
6
18
30
START 30.0 MHz
STOP 200.0 MHz
LOG FREQUENCY – MHz
TPC 1. EMC Conducted Emissions
TPC 4. EMC Radiated Emissions
9
7
9
7
5
3
1
Tx O/P HI LOADED
Tx O/P HI
5
3
1
–1
–3
–5
–7
–9
–1
–3
–5
–7
Tx O/P LO
Tx O/P LO LOADED
4.0
4.5
5.0
– V
5.5
6.0
500
1000
1500
2000
2500
3000
0
V
LOAD CAPACITANCE – pF
CC
TPC 2. Transmitter Output Voltage High/Low vs.
Load Capacitance @ 230 kbps
TPC 5. Transmitter Output Voltage vs. VCC
15
10
T
T
SD
V+
1
Tx O/P HI
5
0
2
T
3
–5
Tx O/P LO
–10
–15
V–
0
2
4
10
6
8
CH 2
5.00V
M 50.0µs
CH 1
CH 3
5.00V
5.00V
CH 1
3.1V
LOAD CURRENT – mA
V+, V– EXITING SD
TPC 3. Transmitter Output Voltage vs. Load Current
TPC 6. Charge Pump V+, V– Exiting Shutdown
–8–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
350
300
250
200
150
100
50
15
V+
10
V–
5
0
V+
–5
V–
–10
–15
0
4.5
5.1
5.3
5.5
4.7
4.9
0
5
10
15
20
V
– V
LOAD CURRENT– mA
CC
TPC 8. Charge Pump V+, V– vs. Current
TPC 7. Charge Pump Impedance vs. VCC
REV. D
–9–
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
GENERAL DESCRIPTION
The ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
are ruggedized RS-232 line drivers/receivers which operate from
a single 5 V supply. Step-up voltage converters coupled with level
S3
S4
S1
S2
V+
GND
FROM
VOLTAGE
C4
C2
DOUBLER
GND
V– = –(V+)
shifting transmitters and receivers allow RS-232 levels to be devel-
oped while operating from a single 5 V supply.
INTERNAL
OSCILLATOR
Features include low power consumption, high transmission rates,
and compatibility with the EU directive on electromagnetic
compatibility. EM compatibility includes protection against
radiated and conducted interference, including high levels of
electrostatic discharge.
Figure 12. Charge Pump Voltage Inverter
Transmitter (Driver) Section
The drivers convert 5 V logic input levels into EIA-232 output
levels. With VCC = 5 V and driving an EIA-232 load, the output
voltage swing is typically 9 V.
All RS-232 inputs and outputs contain protection against electro-
static discharges up to 15 kV and electrical fast transients up to
2 kV. This ensures compliance to IE1000-4-2 and IEC1000-4-4
requirements.
Unused inputs may be left unconnected, as an internal 400 kΩ
pull-up resistor pulls them high forcing the outputs into a low
state. The input pull-up resistors typically source 8 µA when
grounded, so unused inputs should either be connected to VCC
or left unconnected in order to minimize power consumption.
The devices are ideally suited for operation in electrically
harsh environments or where RS-232 cables are frequently being
unplugged. They are also immune to high RF field strengths
without special shielding precautions.
Receiver Section
The receivers are inverting level shifters which accept EIA-232
input levels and translate them into 5 V logic output levels.
The inputs have internal 5 kΩ pull-down resistors to ground
and are also protected against overvoltages of up to 25 V.
The guaranteed switching thresholds are 0.4 V minimum and
2.4 V maximum. Unconnected inputs are pulled to 0 V by the
internal 5 kΩ pull-down resistor. This, therefore, results in
a Logic 1 output level for unconnected inputs or for inputs
connected to GND.
Emissions are also controlled to within very strict limits. CMOS
technology is used to keep the power dissipation to an absolute
minimum allowing maximum battery life in portable applications.
The ADMxxE is a modification, enhancement, and improve-
ment to the AD230–AD241 family and its derivatives. It is
essentially plug-in compatible and does not have materially
different applications.
CIRCUIT DESCRIPTION
The internal circuitry consists of four main sections.
The receivers have Schmitt trigger input with a hysteresis level
of 0.65 V. This ensures error-free reception for both noisy
inputs and for inputs with slow transition times.
1. A charge pump voltage converter
2. 5 V logic to EIA-232 transmitters
3. EIA-232 to 5 V logic receivers
ENABLE AND SHUTDOWN
Table II and Table III show the truth tables for the enable and
shutdown control signals. The enable function is intended to
facilitate data bus connections where it is desirable to three-state
the receiver outputs. In the disabled mode, all receiver outputs
are placed in a high impedance state. The shutdown function is
intended to shut the device down, thereby minimizing the quies-
cent current. In shutdown, all transmitters are disabled and all
receivers on the ADM211E are three-stated. On the ADM213E,
receivers R4 and R5 remain enabled in shutdown. Note that the
transmitters are disabled but are not three-stated in shutdown,
so it is not permitted to connect multiple (RS-232) driver out-
puts together.
4. Transient protection circuit on all I-O lines
Charge Pump DC-DC Voltage Converter
The charge pump voltage converter consists of an 200 kHz
oscillator and a switching matrix. The converter generates a
10 V supply from the input 5 V level. This is done in two
stages using a switched capacitor technique as illustrated below.
First, the 5 V input supply is doubled to 10 V using capacitor
C1 as the charge storage element. The 10 V level is then inverted
to generate –10 V using C2 as the storage element.
Capacitors C3 and C4 are used to reduce the output ripple. If
desired, larger capacitors (up to 47 µF) can be used for capaci-
tors C1–C4. This facilitates direct substitution with older
generation charge pump RS-232 transceivers.
The shutdown feature is very useful in battery-operated systems
since it reduces the power consumption to 1 µW. During shut-
down the charge pump is also disabled. The shutdown control
input is active high on the ADM211E, and it is active low on
the ADM213E. When exiting shutdown, the charge pump is
restarted and it takes approximately 100 µs for it to reach its
steady state operating condition.
The V+ and V– supplies may also be used to power external
circuitry if the current requirements are small. Please refer to
TPC 9 in the Typical Performance Characteristics section.
S1
S3
V
V+ = 2V
CC
CC
C3
C1
S2
S4
V
GND
CC
INTERNAL
OSCILLATOR
Figure 11. Charge Pump Voltage Doubler
–10–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
High Baud Rate
R1
The ADM2xxE feature high slew rates permitting data transmis-
sion at rates well in excess of the EIA-232-E specifications.
RS-232 levels are maintained at data rates up to 230 kb/s even
under worst case loading conditions. This allows for high speed
data links between two terminals, making it suitable for the new
generation modem standards which require data rates of 200 kb/s.
The slew rate is internally controlled to less than 30 V/µs to
minimize EMI interference.
RECEIVER
INPUT
RX
D1
D2
R
IN
Figure 15a. Receiver Input Protection Scheme
3V
EN INPUT
T
OUT
TRANSMITTER
OUTPUT
RX
0V
D1
D2
tDR
VOH
VOH –0.1V
RECEIVER
OUTPUT
Figure 15b. Transmitter Output Protection Scheme
VOL +0.1V
ESD TESTING (IEC1000-4-2)
VOL
IEC1000-4-2 (previously 801-2) specifies compliance testing
using two coupling methods, contact-discharge and air-gap
discharge. Contact discharge calls for a direct connection to the
unit being tested. Air-gap discharge uses a higher test voltage
but does not make direct contact with the unit under test. With
air discharge, the discharge gun is moved toward the unit under
test, developing an arc across the air gap; hence the term air
discharge. This method is influenced by humidity, temperature,
barometric pressure, distance, and rate of closure of the discharge
gun. The contact-discharge method, while less realistic, is more
repeatable, and is gaining acceptance in preference to the air-
gap method.
NOTE:
EN IS THE COMPLEMENT OF EN FOR THE ADM213E
Figure 13. Receiver Disable Timing
3V
EN INPUT
0V
tER
+3.5V
RECEIVER
OUTPUT
Although very little energy is contained within an ESD pulse,
the extremely fast rise time, coupled with high voltages, can
cause failures in unprotected semiconductors. Catastrophic
destruction can occur immediately as a result of arcing or heat-
ing. Even if catastrophic failure does not occur immediately, the
device may suffer from parametric degradation that may result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
+0.8V
NOTE:
EN IS THE COMPLEMENT OF EN FOR THE ADM213E
Figure 14. Receiver Enable Timing
ESD/EFT Transient Protection Scheme
The ADM2xxE use protective clamping structures on all
inputs and outputs that clamp the voltage to a safe level and
dissipates the energy present in ESD (electrostatic) and EFT
(electrical fast transients) discharges. A simplified schematic of
the protection structure is shown in Figures 15a and 15b.
Each input and output contains two back-to-back high speed
clamping diodes. During normal operation, with maximum
RS-232 signal levels, the diodes have no effect as one or the
other is reverse-biased, depending on the polarity of the signal.
If, however, the voltage exceeds about 50 V, reverse breakdown
occurs and the voltage is clamped at this level. The diodes are
large p-n junctions designed to handle the instantaneous cur-
rent surge which can exceed several amperes.
I-O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I-O cable can result in a static
discharge that can damage or destroy the interface product
connected to the I-O port. Traditional ESD test methods such
as the MIL-STD-883B method 3015.7 do not fully test a
product’s susceptibility to this type of discharge. This test was
intended to test a product’s susceptibility to ESD damage dur-
ing handling. Each pin is tested with respect to all other pins.
There are some important differences between the traditional
test and the IEC test:
(a) The IEC test is much more stringent in terms of discharge
(
energy. The peak current injected is over four times greater.
(b) The current rise time is significantly faster in the IEC test.
(c) The IEC test is carried out while power is applied to the device.
The transmitter outputs and receiver inputs have a similar pro-
tection structure. The receiver inputs can also dissipate some of
the energy through the internal 5 kΩ resistor to GND as well as
through the protection diodes.
It is possible that the ESD discharge could induce latch-up in
the device under test. This test, therefore, is more representative
of a real-world I-O discharge where the equipment is operating
normally with power applied. For maximum peace of mind, how-
ever, both tests should be performed, thus ensuring maximum
protection both during handling and later during field service.
The protection structure achieves ESD protection up to 15 kV
and EFT protection up to 2 kV on all RS-232 I-O lines. The
methods used to test the protection scheme are discussed later.
REV. D
–11–
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
R1
R2
Table IV. IEC1000-4-2 Compliance Levels
HIGH
VOLTAGE
GENERATOR
Contact Discharge Air Discharge
DEVICE
UNDER TEST
C1
Level
(kV)
(kV)
1
2
3
4
2
4
6
8
2
4
8
15
ESD TEST METHOD
H. BODY MIL-STD883B
IEC1000-4-2
R2
C1
1.5kꢂ
330ꢂ
100pF
150pF
Figure 16. ESD Test Standards
Table V. ADM2xxE ESD Test Results
ESD Test Method
I-O Pin (kV)
100
90
MIL-STD-883B
IEC1000-4-2
Contact
15
8
Air
15
FAST TRANSIENT BURST TESTING (IEC1000-4-4)
IEC1000-4-4 (previously 801-4) covers electrical fast transient
burst (EFT) immunity. Electrical fast transients occur as a
result of arcing contacts in switches and relays. The tests simu-
late the interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well known back EMF effect. In fact, the spark consists of a burst
of sparks as the relay contacts separate. The voltage appear-
ing on the line, therefore, consists of a burst of extremely fast
transient impulses. A similar effect occurs when switching on
fluorescent lights.
36.8
10
tDL
tRL
TIME t
Figure 17. Human Body Model ESD Current Waveform
100
90
The fast transient burst test defined in IEC1000-4-4 simulates
this arcing, and its waveform is illustrated in Figure 19. It consists
of a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms
intervals. It is specified for both power and data lines.
V
10
0.1 TO 1ns
TIME t
t
30ns
60ns
300ms
15ms
Figure 18. IEC1000-4-2 ESD Current Waveform
5ns
V
ADM2xxE products are tested using both of the above mentioned
test methods. All pins are tested with respect to all other pins as
per the MIL-STD-883B specification. In addition, all I-O pins
are tested per the IEC test specification. The products are tested
under the following conditions:
50ns
t
(a) Power-On—Normal Operation
(b) Power-On—Shutdown Mode
(c) Power-Off
0.2/0.4ms
Figure 19. IEC1000-4-4 Fast Transient Waveform
There are four levels of compliance defined by IEC1000-4-2.
ADM2xxE products meet the most stringent compliance level
for both contact and for air-gap discharge. This means that the
products are able to withstand contact discharges in excess of
8 kV and air-gap discharges in excess of 15 kV.
–12–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Table VI.
Testing for immunity involves irradiating the device with an EM
field. There are various methods of achieving this, including use
V Peak (kV)
PSU
V Peak (kV)
I-O
of anechoic chamber, stripline cell, TEM cell, GTEM cell. A
stripline cell consists of two parallel plates with an electric field
developed between them. The device under test is placed within
the cell and exposed to the electric field. There are three severity
levels having field strengths ranging from 1 V to 10 V/m. Results
are classified in a similar fashion to those for IEC1000-4-4.
Level
1
2
3
4
0.5
1
2
0.25
0.5
1
4
2
1. Normal operation
A simplified circuit diagram of the actual EFT generator is
illustrated in Figure 20.
2. Temporary degradation or loss of function that is self-
recoverable when the interfering signal is removed
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp is 1 m long and it completely sur-
rounds the cable providing maximum coupling capacitance
(50 pF to 200 pF typ) between the clamp and the cable. High
energy transients are capacitively coupled onto the signal lines.
Fast rise times (5 ns) as specified by the standard result in very
effective coupling. This test is very severe since high voltages are
coupled onto the signal lines. The repetitive transients can often
cause problems where single pulses do not. Destructive latch-up
may be induced due to the high energy content of the transients.
Note that this stress is applied while the interface products are
powered up and are transmitting data. The EFT test applies
hundreds of pulses with higher energy than ESD. Worst-case
transient current on an I-O line can be as high as 40 A.
3. Temporary degradation or loss of function that requires
operator intervention or system reset when the interfering
signal is removed
4. Degradation or loss of function that is not recoverable due to
damage
The ADM2xxE family of products easily meets Classification 1
at the most stringent (Level 3) requirement. In fact, field strengths
up to 30 V/m showed no performance degradation, and error-
free data transmission continued even during irradiation.
Table VII. Test Severity Levels (IEC1000-4-3)
Field Strength
Level
V/m
Test results are classified according to the following:
1. Normal performance within specification limits
1
2
3
1
3
10
2. Temporary degradation or loss of performance that is self-
recoverable
3. Temporary degradation or loss of function or performance
that requires operator intervention or system reset
EMISSIONS/INTERFERENCE
EN55 022, CISPR22 defines the permitted limits of radiated
and conducted interference from information technology (IT)
equipment. The objective of the standard is to minimize the
level of emissions both conducted and radiated.
4. Degradation or loss of function that is not recoverable due to
damage
ADM2xxE products have been tested under worst-case condi-
tions using unshielded cables, and meet Classification 2. Data
transmission during the transient condition is corrupted, but it
may be resumed immediately following the EFT event without
user intervention.
For ease of measurement and analysis, conducted emissions are
assumed to predominate below 30 MHz and radiated emissions
are assumed to predominate above 30 MHz.
CONDUCTED EMISSIONS
This is a measure of noise that is conducted onto the line
power supply. Switching transients from the charge pump that
are 20 V in magnitude and containing significant energy can
lead to conducted emissions. Other sources of conducted emis-
sions can be due to overlap in switch on times in the charge
pump voltage converter. In the voltage doubler shown below, if
S2 has not fully turned off before S4 turns on, this results in a
transient current glitch between VCC and GND which results in
conducted emissions. It is therefore important that the switches
in the charge pump guarantee break-before-make switching
under all conditions so that instantaneous short-circuit condi-
tions do not occur.
C
R
D
L
R
M
HIGH
VOLTAGE
SOURCE
C
50ꢂ
OUTPUT
Z
C
S
C
Figure 20. IEC1000-4-4 Fast Transient Generator
IEC1000-4-3 RADIATED IMMUNITY
IEC1000-4-3 (previously IEC801-3) describes the measure-
ment method and defines the levels of immunity to radiated
electromagnetic fields. It was originally intended to simulate the
electromagnetic fields generated by portable radio transceivers
or any other device that generates continuous wave radiated
electromagnetic energy. Its scope has since been broadened to
include spurious EM energy which can be radiated from fluores-
cent lights, thyristor drives, inductive loads, etc.
The ADM2xxE have been designed to minimize the switching
transients and ensure break-before-make switching thereby
minimizing conducted emissions. This has resulted in the
level of emissions being well below the limits required by the
specification. No additional filtering/decoupling other than the
recommended 0.1 µF capacitor is required.
REV. D
–13–
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
RADIATED EMISSIONS
Conducted emissions are measured by monitoring the line power
supply. The equipment used consists of a LISN (line impedance
stabilizing network) which essentially presents a fixed impedance at
RF, and a spectrum analyzer. The spectrum analyzer scans for
emissions up to 30 MHz. A plot for the ADM211E is shown in
Figure 23.
Radiated emissions are measured at frequencies in excess of
30 MHz. RS-232 outputs designed for operation at high baud
rates while driving cables can radiate high frequency EM energy.
The reasons already discussed which cause conducted emissions
can also be responsible for radiated emissions. Fast RS-232
output transitions can radiate interference, especially when
lightly loaded and driving unshielded cables. Charge pump
devices are also prone to radiating noise due to the high frequency
oscillator and high voltages being switched by the charge pump.
The move towards smaller capacitors in order to conserve
board space has resulted in higher frequency oscillators being
employed in the charge pump design. This has resulted in higher
levels of emission, both conducted and radiated.
S1
S3
V
V+ = 2V
CC
CC
C3
C1
S2
S4
V
GND
CC
INTERNAL
OSCILLATOR
The RS-232 outputs on the ADM2xxE products feature a
controlled slew rate in order to minimize the level of radiated
emissions, yet are fast enough to support data rates up to
230 kBaud.
Figure 21. Charge Pump Voltage Doubler
ø
ø
1
RADIATED NOISE
DUT
2
TO
RECEIVER
SWITCHING GLITCHES
ADJUSTABLE
ANTENNA
TURNTABLE
Figure 22. Switching Glitches
Figure 24. Radiated Emissions Test Setup
80
Figure 25 shows a plot of radiated emissions versus frequency.
This shows that the levels of emissions are well within specifica-
tions without the need for any additional shielding or filtering
components. The ADM2xxE were operated at maximum
baud rates and configured in a typical RS-232 interface.
70
60
50
LIMIT
Testing for radiated emissions was carried out in a shielded
anechoic chamber.
40
30
20
10
0
80
70
60
50
0.3
0.6
1
3
6
18
30
LOG FREQUENCY – MHz
Figure 23. Conducted Emissions Plot
LIMIT
40
30
20
10
0
START 30.0 MHz
STOP 200.0 MHz
Figure 25. Radiated Emissions Plot
–14–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
24-Lead Plastic Dual In-Line Package [PDIP]
(N-24)
Dimensions shown in inches and (millimeters)
1.185 (30.01)
0.295 (7.49)
0.285 (7.24)
0.275 (6.99)
1.165 (29.59)
1.145 (29.08)
24
1
13
12
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
0.180
(4.57)
MAX
0.015 (0.38) MIN
0.150 (3.81)
0.135 (3.43)
0.120 (3.05)
0.150 (3.81)
0.130 (3.30)
0.110 (2.79)
0.015 (0.38)
0.010 (0.25)
0.008 (0.20)
0.100
(2.54)
BSC
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
0.060 (1.52) SEATING
0.050 (1.27)
0.045 (1.14)
PLANE
COMPLIANT TO JEDEC STANDARDS MO-095AG
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
24-Lead Standard Small Outline Package [SOIC]
Wide Body
(R-24)
Dimensions shown in millimeters and (inches)
15.60 (0.6142)
15.20 (0.5984)
24
13
12
7.60 (0.2992)
7.40 (0.2913)
10.65 (0.4193)
10.00 (0.3937)
1
2.65 (0.1043)
2.35 (0.0925)
0.75 (0.0295)
0.25 (0.0098)
ꢄ 45ꢃ
0.30 (0.0118)
0.10 (0.0039)
8ꢃ
0ꢃ
0.51 (0.0201) SEATING
0.31 (0.0122)
1.27 (0.0500)
BSC
1.27 (0.0500)
0.40 (0.0157)
0.33 (0.0130)
0.20 (0.0079)
COPLANARITY
0.10
PLANE
COMPLIANT TO JEDEC STANDARDS MS-013AD
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
REV. D
–15–
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
28-Lead Standard Small Outline Package [SOIC]
Wide Body
(R-28)
Dimensions shown in millimeters and (inches)
18.10 (0.7126)
17.70 (0.6969)
28
1
15
14
7.60 (0.2992)
7.40 (0.2913)
10.65 (0.4193)
10.00 (0.3937)
2.65 (0.1043)
2.35 (0.0925)
0.75 (0.0295)
0.25 (0.0098)
ꢄ 45ꢃ
0.30 (0.0118)
0.10 (0.0039)
8ꢃ
0ꢃ
1.27 (0.0500) 0.51 (0.0201) SEATING
1.27 (0.0500)
0.40 (0.0157)
0.33 (0.0130)
0.20 (0.0079)
COPLANARITY
0.10
PLANE
BSC
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-013AE
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
24-Lead Shrink Small Outline Package [SSOP]
(RS-24)
Dimensions shown in millimeters
8.50
8.20
7.90
24
1
13
12
8.20
7.80
7.40
5.60
5.30
5.00
1.85
1.75
1.65
0.10
COPLANARITY
2.00 MAX
0.95
0.75
0.55
8ꢃ
4ꢃ
0ꢃ
0.25
0.09
0.65
BSC
0.38
0.22
0.05 MIN
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-150AG
–16–
REV. D
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
28-Lead Shrink Small Outline Package [SSOP]
(RS-28)
Dimensions shown in millimeters
10.50
10.20
9.90
28
15
5.60 8.20
5.30 7.80
5.00 7.40
14
1
1.85
0.10
COPLANARITY
1.75
1.65
2.00 MAX
0.25
0.09
8ꢃ
4ꢃ
0ꢃ
0.95
0.75
0.55
0.38
0.22
0.65
BSC
0.05
MIN
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-150AH
24-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-24)
Dimensions shown in millimeters
7.90
7.80
7.70
24
13
12
4.50
4.40
4.30
6.40 BSC
1
PIN 1
0.65
BSC
1.20
MAX
0.15
0.05
0.75
0.60
0.45
8ꢃ
0ꢃ
0.30
0.19
0.20
0.09
SEATING
PLANE
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-153AD
REV. D
–17–
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
9.80
9.70
9.60
28
15
4.50
4.40
4.30
6.40 BSC
1
14
PIN 1
0.65
BSC
1.20
MAX
0.15
0.05
0.75
0.60
0.45
8ꢃ
0ꢃ
0.30
0.19
0.20
0.09
COPLANARITY
0.10
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-153AE
Revision History
Location
Page
4/05—Data Sheet changed from REV. C to REV. D.
Changes to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3/01—Data Sheet changed from REV. B to REV. C.
Features
Change 460 kbits/s to 230 kbits/s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Specifications Table
Changed in Min, Typ, Max, Test Conditions/Comments columns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Absolute Maximum Ratings
Deleted some items . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Figures
Change made in Figure 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical Performance Characteristics
Changes made in plots . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7, 8
Table V.
Column removed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
–18–
REV. D
–19–
–20–
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