BAS40-05B5000 [ROCHESTER]
0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN;
| 型号： | BAS40-05B5000 |
| 厂家： | 
Rochester Electronics |
| 描述： | 0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN |
| 文件： | 总9页 (文件大小：900K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS40...B5000 / B5003
Silicon Schottky Diode
• General-purpose diode for high-speed switchhing
• Circuit protected
• Voltage clamping
• High-level detecting and mixing
• Improved operating temperature range
due to extra-low thermal resistance
(see attached Forward current curves)
• High volume packing size:
B5000: 9 x 10k reels, B5003: 10 x 3k reels
• Not for automotive applications*
BAS40
BAS40-04
BAS40-05
BAS40-06
3
3
3
3
D
2
D
2
D
1
D
1
D
1
D
2
1
2
1
2
1
2
1
2
Type
Package
SOT23
SOT23
SOT23
SOT23
Configuration
single
series
common cathode
common anode
L (nH) Marking
S
BAS40
1.8
1.8
1.8
1.8
43s
44s
45s
46s
BAS40-04
BAS40-05
BAS40-06
* Automotive qualification ongoing
2006-08-04
1
BAS40...B5000 / B5003
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
(t ≤ 10 µσ)
Symbol
V
R
Value
40
120
200
Unit
V
mA
I
F
I
FSM
mW
°C
Total power dissipation
P
tot
BAS40, T ≤ 118 °C
250
250
250
s
BAS40-04, BAS40-06, T ≤ 110° C
s
BAS40-05, T ≤ 104°C
s
150
Junction temperature
T
j
Operating temperature range
Storage temperature
T
-55 ... 125
-55 ... 150
op
T
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
R
thJS
Value
Unit
K/W
1)
BAS40
BAS40-04, BAS40-06
BAS40-05
≤ 130
≤ 160
≤ 185
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2006-08-04
2
BAS40...B5000 / B5003
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
40
-
typ. max.
DC Characteristics
Breakdown voltage
-
-
-
V
V
(BR)
F
I
= 10 µA
(BR)
1
Reverse current
I
µA
R
V = 30 V
R
mV
Forward voltage
V
I = 1 mA
250
350
600
310
450
720
380
500
1000
F
I = 10 mA
F
I = 40 mA
F
1)
-
-
20
Forward voltage matching
∆ V
F
I = 10 mA
F
AC Characteristics
Diode capacitance
-
3
5
-
pF
C
R
T
F
rr
V = 0 , f = 1 MHz
R
Differential forward resistance
-
-
10
-
Ω
I = 10 mA, f = 10 kHz
F
100 ps
Charge carrier life time
τ
I = 25 mA
F
1∆V is the difference between lowest and highestV in a multiple diode component.
F
F
2006-08-04
3
BAS40...B5000 / B5003
Diode capacitance C = ƒ (V )
Forward resistance r = ƒ (I )
f F
T
R
f = 1MHz
f = 1MHz
BAS 40...
EHB00040
BAS 40...
EHB00041
10 3
5
pF
4
CT
rf
Ω
10 2
10 1
10 3
3
2
1
0
1
10
mA 100
0.1
0
10
20
V
30
VR
Ι F
Reverse current I = ƒ (T )
Reverse current I = ƒ(V )
R R
R
A
V = Parameter
T = Parameter
R
A
10 -4
A
BAS 40...
EHB00039
103
Ι R
µ A
TA = 150 C
102
101
100
10-1
10 -5
10 -6
10 -7
10 -8
85 C
VR = 40V
30V
20V
10V
25 C
10-2
0
°C
0
25
50
75
100
150
10
20
30
V
40
T
A
VR
2006-08-04
4
BAS40...B5000 / B5003
Forward Voltage V = ƒ (T )
Forward current I = ƒ (V )
F F
F
A
I = Parameter
F
BAS 40...
EHB00038
10 2
mA
0.8
V
ΙF
10 1
10 0
10-1
10-2
0.6
0.5
0.4
0.3
0.2
0.1
IF = 40 mA
10 mA
1 mA
0.1 mA
10 µA
TA = -40 ˚C
25 ˚C
1 µA
85 ˚C
150 ˚C
0
°C
-50 -25
0
25
50
75
100
150
0.0
0.5
1.0
V
1.5
T
A
VF
Forward current I = ƒ (T )
Forward current I = ƒ (T )
F
S
F
S
BAS40B500X
BAS40-04 / -06B500X
BAS40Exxxx (e.g. E6327)
BAS40-04/-06Exxxx (e.g. E6327)
140
140
mA
mA
100
100
BAS40B500x
80
80
BAS40Exxxx
BAS40-04/-06B500x
BAS40-04/-06Exxxx
60
40
20
0
60
40
20
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
TS
TS
2006-08-04
5
BAS40...B5000 / B5003
Forward current I = ƒ (T )
F
S
BAS40-05B500X
BAS40-05Exxxx (e.g. E6327)
140
mA
100
80
BAS40-05B500x
BAS40-05Exxxx
60
40
20
0
°C
0
15 30 45 60 75 90 105 120
150
TS
2006-08-04
6
Package SOT23
BAS40...B5000 / B5003
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2006-08-04
7
BAS40...B5000 / B5003
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2006-08-04
8
相关型号：
BAS40-05B5003
Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
INFINEON
BAS40-05E3
Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, PLASTIC PACKAGE-3
MICROSEMI
BAS40-05E6433
Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明