BAW156 [ROCHESTER]

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, ROHS COMPLIANT, SOT-23, 3 PIN;
BAW156
型号: BAW156
厂家: Rochester Electronics    Rochester Electronics
描述:

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, ROHS COMPLIANT, SOT-23, 3 PIN

二极管
文件: 总7页 (文件大小:752K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAW156...  
Silicon Low Leakage Diode  
Low-leakage applications  
Medium speed switching times  
Common anode configuration  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
1)  
BAW156  
3
D
2
D
1
1
2
Type  
BAW156  
Package  
Configuration  
Marking  
SOT23  
common anode  
JZs  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
80  
Unit  
V
Diode reverse voltage  
Peak reverse voltage  
Forward current  
V
V
R
85  
RM  
200  
mA  
A
I
F
Non-repetitive peak surge forward current  
t = 1 µs  
I
FSM  
4.5  
0.5  
250  
t = 1 s  
mW  
°C  
Total power dissipation  
P
tot  
T 31°C  
s
150  
Junction temperature  
Storage temperature  
T
j
T
stg  
-65 ... 150  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
R
360  
thJS  
BAW156  
1
Pb-containing package may be available upon special request  
2
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
2007-04-20  
1
BAW156...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
85  
-
-
V
Breakdown voltage  
V
(BR)  
I
= 100 µA  
(BR)  
Reverse current  
V = 75 V  
I
R
nA  
-
-
-
-
5
R
V = 75 V, T = 150 °C  
80  
R
A
mV  
Forward voltage  
I = 1 mA  
V
F
-
-
-
-
-
-
-
-
900  
1000  
1100  
1250  
F
I = 10 mA  
F
I = 50 mA  
F
I = 150 mA  
F
AC Characteristics  
-
-
2
-
pF  
Diode capacitance  
C
T
V = 0 V, f = 1 MHz  
R
Reverse recovery time  
t
rr  
0.6  
1.5 µs  
I = 10 mA, I = 10 mA, measured at I = 1mA,  
F
R
R
R = 100  
L
Test circuit for reverse recovery time  
D.U.T.  
Pulse generator: t = 10µs, D = 0.05, t = 0.6ns,  
p
r
R = 50Ω  
i
Oscillograph  
ΙF  
Oscillograph: R = 50, t = 0.35ns, C 1pF  
r
EHN00019  
2007-04-20  
2
BAW156...  
Reverse current I = ƒ (T )  
Forward Voltage V = ƒ (T )  
F A  
R
A
V = 70V  
I = Parameter  
F
R
BAW 156  
EHB00106  
BAW 156  
EHB00109  
102  
nA  
1.5  
V
Ι R  
VF  
max  
101  
=
ΙF 150 mA  
1.0  
0.5  
100  
50 mA  
10 mA  
1 mA  
typ  
10-1  
10-2  
10-3  
0.1 mA  
0
0
50  
100  
150  
˚C  
0
50  
100  
150  
˚C  
TA  
TA  
Forward current I = ƒ (V )  
Forward current I = ƒ (T )  
F S  
F
F
T = 25°C  
A
BAW156  
BAW 156  
EHB00107  
250  
mA  
150  
mA  
Ι F  
200  
175  
150  
125  
100  
75  
100  
50  
0
typ  
max  
50  
25  
0
0
°C  
0
0.5  
1.0  
V
1.5  
15 30 45 60 75 90 105 120  
150  
TS  
VF  
2007-04-20  
3
BAW156...  
Permissible Puls Load R  
= ƒ (t )  
Permissible Pulse Load  
thJS  
p
I
/ I  
= ƒ (t )  
Fmax FDC p  
10 3  
10 2  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
10 1  
D = 0,5  
0,2  
0.2  
0.5  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10 0  
10 -1  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
T
T
P
P
2007-04-20  
4
Package SOT23  
BAW156...  
Package Outline  
±0.1  
1
0.1 MAX.  
±0.1  
2.9  
B
3
1
2
1)  
+0.1  
-0.05  
0.4  
A
0.08...0.15  
C
0.95  
0...8˚  
1.9  
0.25 B C  
1) Lead width can be 0.6 max. in dambar area  
M
M
0.2  
A
Foot Print  
0.8  
0.8  
1.2  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
EH  
s
Pin 1  
BCW66  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.9  
1.15  
3.15  
Pin 1  
2007-04-20  
5
BAW156...  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-04-20  
6

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