BUZ103SLE3045A [ROCHESTER]
28A, 55V, 0.044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN;
| 型号： | BUZ103SLE3045A |
| 厂家： | 
Rochester Electronics |
| 描述： | 28A, 55V, 0.044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ 103SL
SIPMOS Power Transistor
Product Summary
Features
Drain source voltage
55
0.026
28
V
V
DS
• N channel
Drain-Source on-state resistance
Continuous drain current
R
DS(on)
Ω
•
Enhancement mode
A
I
D
• Avalanche rated
• Logic Level
• d
v/dt rated
• 175 ˚C operating temperature
Pin1 Pin2 Pin3
Type
Package
Ordering Code
Packaging
G
D
S
BUZ103SL
P-TO220-3-1 Q67040-S4008-A2 Tube
P-TO263-3-2 Q67040-S4008-A6 Tape and Reel
P-TO263-3-2 Q67040-S4008-A5 Tube
BUZ103SL E3045A
BUZ103SL E3045
Maximum Ratings, at
T
= 25 ˚C unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
A
I
D
T
= 25 ˚C
28
20
C
T
= 100 ˚C
C
Pulsed drain current
= 25 ˚C
112
IDpulse
T
C
Avalanche energy, single pulse
= 28 A, = 25 V, = 25 Ω
140
mJ
E
E
AS
I
V
R
GS
D
DD
7.5
6
Avalanche energy, periodic limited by
Reverse diode d /d
= 28 A, = 40 V, d
T
jmax
AR
kV/µs
v
t
d
v
/d
t
I
V
i/d
t
= 200 A/
µ
s,
S
DS
T
= 175 ˚C
jmax
Gate source voltage
Power dissipation
–20
75
V
V
P
GS
W
tot
T
= 25 ˚C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55... +175
55/175/56
˚C
T , T
j stg
Data Book
1
05.99
BUZ 103SL
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
-
-
-
-
2
K/W
R
R
R
thJC
thJA
thJA
62
-
-
-
-
62
40
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
55
max.
Static Characteristics
Drain- source breakdown voltage
-
-
V
V
V
(BR)DSS
GS(th)
DSS
V
= 0 V, I = 0.25 mA
D
GS
1.2
1.6
2
Gate threshold voltage, V = V
GS
DS
I = 50 µA
D
Zero gate voltage drain current
µA
I
I
V
V
= 50 V, V = 0 V, T = 25 ˚C
-
-
0.1
-
1
DS
DS
GS
j
= 50 V, V = 0 V, T = 150 ˚C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
-
10
100 nA
GSS
V
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
V
= 4.5 V, I = 20 A
-
-
0.04 0.044
0.0235 0.026
GS
GS
D
= 10 V, I = 20 A
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book
2
05.99
BUZ 103SL
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
10
-
20
770
230
130
10
-
S
g
fs
V
≥2*I *R
, I = 20 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
960 pF
300
C
C
C
iss
oss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
-
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
-
165
rss
V
GS
DS
Turn-on delay time
= 30 V, V = 4.5 V, I = 28 A,
-
15
115
45
ns
t
t
t
t
d(on)
V
DD
GS
D
R = 6.8 Ω
G
Rise time
-
-
-
75
30
20
r
V
= 30 V, V = 4.5 V, I = 28 A,
GS D
DD
R = 6.8 Ω
G
Turn-off delay time
= 30 V, V = 4.5 V, I = 28 A,
d(off)
V
DD
GS
D
R = 6.8 Ω
G
Fall time
30
f
V
= 30 V, V = 4.5 V, I = 28 A,
GS D
DD
R = 6.8 Ω
G
Data Book
3
05.99
BUZ 103SL
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
-
-
-
-
4
12
32
4
6
18
50
-
nC
Q
Q
Q
gs
V
= 40 V, I = 28 A
D
DD
Gate to drain charge
= 40 V, I = 28 A
gd
V
DD
D
Gate charge total
= 40 V, I = 28 A, V = 0 to 10 V
g
V
DD
D
GS
Gate plateau voltage
= 40 V, I = 28 A
V
V
(plateau)
V
DD
D
Reverse Diode
Inverse diode continuous forward current
-
-
-
-
-
-
-
28
112
1.8
90
A
I
S
T = 25 ˚C
C
Inverse diode direct current,pulsed
I
SM
T = 25 ˚C
C
Inverse diode forward voltage
1.1
60
0.15
V
V
SD
V
= 0 V, I = 56 A
F
GS
Reverse recovery time
V = 30 V, I =I , di /dt = 100 A/µs
ns
t
rr
R
F
S
F
Reverse recovery charge
0.25 µC
Q
rr
V = 30 V, I
=l , di /dt = 100 A/µs
F S F
R
Data Book
4
05.99
BUZ 103SL
Power Dissipation
Drain current
I = f (T )
P
= f (T )
C
tot
D
C
parameter: V ≥ 10 V
GS
BUZ103SL
BUZ103SL
80
30
A
W
24
22
20
60
50
40
30
20
10
0
18
P
I
16
14
12
10
8
6
4
2
0
˚C
˚C
190
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
T
T
C
C
Safe operating area
I = f (V
Transient thermal impedance
)
Z
= f (t )
D
DS
thJC p
parameter : D = 0 , T = 25 ˚C
parameter : D = t /T
C
p
BUZ103SL
BUZ103SL
10 1
10 3
K/W
A
10 0
t
= 15.0µs
p
10 2
10 -1
I
Z
I
D = 0.50
0.20
100 µs
V
10 -2
10 1
0.10
R
0.05
1 ms
0.02
10 -3
0.01
single pulse
10 ms
DC
V
10 0
10 -4
10 -1
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
V
t
p
DS
Data Book
5
05.99
BUZ 103SL
Typ. output characteristics
I = f (V
Typ. drain-source-on-resistance
= f (I )
)
DS
D
R
DS(on)
D
parameter: t = 80 µs
p
parameter: V
GS
BUZ103SL
BUZ103SL
70
A
Ptot = 75W
0.15
Ω
b
c
d
e
f
60
55
50
45
40
35
30
25
20
15
10
5
k
j
V
[V]
h
g
l
i
GS
a
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
0.12
0.11
0.10
b
c
d
e
f
f
I
0.09
e
R
g
h
i
0.08
0.07
0.06
0.05
0.04
0.03
d
b
j
k
l
c
a
g
h
j
i
k
l
V
[V] =
0.02
0.01
0.00
GS
b
c
d
e
f
g
h
i
j
k
l
3.0 3.5 4.0 4.5 5.0
5.5 6.0 6.5 7.0
8.0 10.0
0
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
A
0
10
20
30
40
60
V
DS
I
D
Typ. forward transconductance
Typ. transfer characteristics I = f (V
)
D
GS
g = f(I ); T = 25˚C
parameter: t = 80 µs
fs
D
j
p
parameter: g
V
≥ 2 x I x R
fs
DS
D
DS(on)max
25
60
A
S
40
30
20
10
0
15
I
g
10
5
0
V
A
1
2
3
4
6
0
10
20
30
40
60
V
I
D
GS
Data Book
6
05.99
BUZ 103SL
Gate threshold voltage
= f (T )
Drain-source on-resistance
= f (T )
V
GS(th)
j
R
DS(on)
j
parameter : V = V , I = 50 µA
GS
DS D
parameter : I = 20 A, V = 4.5 V
D
GS
BUZ103SL
3.0
V
0.15
Ω
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
V
R
98%
typ
max
typ
min
˚C
-60
-20
20
60
100
140
200
˚C
-60
-20
20
60
100
140
200
T
j
T
j
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
I = f (V
)
)
SD
DS
F
Parameter: V = 0 V, f = 1 MHz
parameter: T , t = 80 µs
GS
j
p
BUZ103SL
10 4
10 3
A
pF
10 2
10 1
10 0
C
I
10 3
Ciss
Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)
Coss
Crss
10 2
V
0
10
20
40
V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.0
V
V
DS
SD
Data Book
7
05.99
BUZ 103SL
Typ. gate charge
Avalanche Energy E = f (T )
AS
j
V
= f (Q
)
parameter: I = 28 A, V = 25 V
GS
Gate
D
DD
parameter: I
= 28 A
R
= 25 Ω
D puls
GS
BUZ103SL
150
16
V
12
10
8
mJ
E
V
V
V
DS max
0,2
0,8
DS max
6
50
4
2
0
20
0
˚C
40
60
80 100 120 140
180
0
10
20
30
40
55
Gate
nC
Q
T
j
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
BUZ103SL
66
V
64
62
60
58
56
54
52
50
V
˚C
-60
-20
20
60
100
140
200
T
j
Data Book
8
05.99
相关型号：
BUZ104
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
INFINEON
BUZ104L
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)
INFINEON
BUZ104S
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
INFINEON
BUZ104SL
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)
INFINEON
BUZ104SL-4
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
INFINEON
BUZ104SLE3045
Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
INFINEON
BUZ104SLE3045A
Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明