BYW80-200 [ROCHESTER]
8A, 200V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC, CASE 221B-04, TO-220B, 2 PIN;
| 型号： | BYW80-200 |
| 厂家： | 
Rochester Electronics |
| 描述： | 8A, 200V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC, CASE 221B-04, TO-220B, 2 PIN 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总5页 (文件大小：781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYW80-200
SWITCHMODEt
Power Rectifiers
This state−of−the−art device is designed for use in switching power
supplies, inverters and as free wheeling diodes.
Features
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• Ultrafast 35 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
ULTRAFAST RECTIFIERS
8.0 AMPERES, 200 VOLTS
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Forward Voltage
1
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Pb−Free Package is Available*
4
3
Mechanical Characteristics
• Case: Epoxy, Molded
MARKING
DIAGRAM
4
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
CASE 221B
TO−220B
PLASTIC
AY WWG
BYW80-200
KA
MAXIMUM RATINGS
1
Rating
Symbol
Values
Unit
3
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
200
V
RRM
V
RWM
V
R
Average Rectified Forward Current
I
8.0
16
A
A
F(AV)
Total Device, (Rated V ), T = 150°C
R
C
A
Y
= Assembly Location
= Year
Peak Repetitive Forward Current
(Rated V , Square Wave, 20 kHz),
I
FM
WW
= Work Week
R
BYW80−200 = Device Code
T
= 150°C
C
G
= Pb−Free Package
= Diode Polarity
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
100
A
FSM
KA
ORDERING INFORMATION
Operating Junction Temperature and
Storage Temperature Range
T , T
−65 to +175
°C
J
stg
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BYW80−200
TO−220
50 Units/Rail
50 Units/Rail
BYW80−200G
TO−220
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
June, 2008 − Rev. 3
BYW80/D
BYW80−200
THERMAL CHARACTERISTICS
Rating
Symbol
Values
Unit
Maximum Thermal Resistance, Junction−to−Case
ELECTRICAL CHARACTERISTICS
R
q
JC
3.0
°C/W
Maximum Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 7.0 Amps, T = 100°C)
0.85
1.25
F
C
(i = 22 Amps, T = 25°C)
F
C
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T = 100°C)
i
mA
ns
R
1
0.01
J
(Rated dc Voltage, T = 25°C)
J
Maximum Reverse Recovery Time
t
rr
(I = 1.0 Amp, di/dt = 50 Amps/ms)
35
25
F
(I = 0.5 Amp, i = 1.0 Amp, I = 0.25 Amp)
F
R
REC
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
1000
100
10
100
70
T = 175°C
J
50
100°C
25°C
30
20
1.0
0.1
10
7.0
5.0
0.01
0
20
40
60
80 100 120 140 160 180 200
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
3.0
2.0
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V is sufficiently below rated V .
R
R
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
T = 175°C
J
100°C 25°C
RATED V APPLIED
R
1.0
0.7
0.5
dc
SQUARE WAVE
0.3
0.2
1.0
0
0.1
0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
INSTANTANEOUS VOLTAGE (VOLTS)
1.2
140
150
160
170
180
v
F,
T , CASE TEMPERATURE (°C)
C
Figure 1. Typical Forward Voltage
Figure 3. Current Derating, Case
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2
BYW80−200
10
14
12
R
R
= 16°C/W
= 60°C/W
q
JA
JA
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
T = 175°C
J
q
dc
(NO HEAT SINK)
10
SQUARE WAVE
dc
SQUARE WAVE
8.0
6.0
4.0
dc
SQUARE WAVE
2.0
0
1.0
0
0
20
40
60
80 100 120 140 160 180 200
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
, AVERAGE FORWARD CURRENT (AMPS)
10
T , AMBIENT TEMPERATURE (°C)
I
F(AV)
A
Figure 4. Current Derating, Ambient
Figure 5. Power Dissipation
1.0
0.5
D = 0.5
0.1
0.2
0.1
0.05
0.01
Z
qJC(t)
= r(t) R
qJC
R
= 1.5 °C/W MAX
D CURVES APPLY FOR POWER
qJC
P
(pk)
0.05
t
1
PULSE TRAIN SHOWN
READ TIME AT T
1
t
2
SINGLE PULSE
T
- T = P
C
Z
q
(pk) JC(t)
0.02
0.01
J(pk)
DUTY CYCLE, D = t /t
1 2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
t, TIME (ms)
Figure 6. Thermal Response
1000
300
100
T = 25°C
J
30
10
1.0
10
100
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Typical Capacitance
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3
BYW80−200
PACKAGE DIMENSIONS
TO−220
CASE 221B−04
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
F
T
S
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.36
12.70
1.14
2.54
2.04
1.14
5.97
0.000
MAX
15.75
10.29
4.82
0.89
4.09
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
A
B
C
D
F
0.595
0.380
0.160
0.025
0.142
0.190
0.110
0.014
0.500
0.045
0.100
0.080
0.045
0.235
0.000
0.620
0.405
0.190
0.035
0.161
0.210
0.130
0.025
0.562
0.060
0.120
0.110
0.055
0.255
0.050
4
A
U
1
3
G
H
J
H
K
K
L
Q
R
S
T
L
R
D
J
U
G
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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