EGP30J [ROCHESTER]
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, DO-201AD, 2 PIN;
| 型号： | EGP30J |
| 厂家： | 
Rochester Electronics |
| 描述： | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, DO-201AD, 2 PIN 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总4页 (文件大小：808K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP30A - EGP30K
Features
• Glass passivated cavity-free junction.
• High surge current capability.
• Low leakage current.
• Superfast recovery time for high
efficiency.
DO-201AD
• Low forward voltage, high current
capability.
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Value
Symbol
Parameter
Units
30A 30B 30C 30D 30F 30G 30J 30K
VR
Breakdown Voltage
50 100 150 200 300 400 600 800
V
A
IF(AV)
Average Rectified Forward Current,
.375 " lead length @ TA = 55°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
3.0
IFSM
125
A
Storage Temperature Range
-65 to +150
-65 to +150
°C
°C
Tstg
TJ
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
6.25
20
W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
RθJA
RθJL
°C/W
°C/W
8.5
Electrical Characteristics
TA = 25°C unless otherwise noted
Device
Symbol
Parameter
Units
30A 30B 30C 30D 30F 30G 30J 30K
VF
trr
Forward Voltage @ 3.0 A
0.95
1.25
1.7
V
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Reverse Current @ rated VR TA = 25°C
TA = 125°C
50
75
ns
IR
5.0
100
µA
A
µ
CT
Total Capacitance
95
75
pF
VR = 4.0 V, f = 1.0 MHz
2001 Fairchild Semiconductor Corporation
EGP30A - EGP30K, Rev. C1
Typical Characteristics
175
150
125
100
75
3
2
SINGLE PHASE
HALF WAVE
1
0
60HZ
50
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
25
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Ambient Temperature [ºC]
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
50
100
T
= 150ºC
A
EGP30A-EGP30D
10
10
1
T
= 25ºC
T
= 150ºC
T
= 125 C
º
A
A
A
T
1
0.1
0.1
= 75ºC
A
EGP30F-EGP30K
0.01
0.001
Pulse Width = 300µs
2% Duty Cycle
T
= 25ºC
A
0.01
0
20
40
60
80
100 120 140
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
Percent of Rated Peak Reverse Voltage [%]
Forward Voltage, VF [V]
Figure 4. Reverse Current vs Reverse Voltage
Figure 3. Forward Voltage Characteristics
210
180
150
120
EGP30A-EGP30D
90
EGP30F-EGP30K
60
30
0
0.1
1
10
100
1000
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
50Ω
50Ω
NONINDUCTIVE
trr
NONINDUCTIVE
+0.5A
(-)
DUT
0
Pulse
Generator
(Note 2)
50V
(approx)
-0.25A
(+)
50Ω
NONINDUCTIVE
OSCILLOSCOPE
(Note 1)
NOTES:
-1.0A
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
EGP30A - EGP30K, Rev. C1
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
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CoolFET™
OPTOLOGIC™
OPTOPLANAR™
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FASTr™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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MicroFET™
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MICROWIRE™
CROSSVOLT™
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POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
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TinyLogic™
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QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
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UltraFETâ
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
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user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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