FQI17N08LTU [ROCHESTER]
16.5A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3;
| 型号： | FQI17N08LTU |
| 厂家： | 
Rochester Electronics |
| 描述： | 16.5A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：1315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2000
TM
QFET
FQB17N08L / FQI17N08L
80V LOGIC N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
•
•
•
•
•
•
•
•
16.5A, 80V, R
Low gate charge ( typical 8.8 nC)
Low Crss ( typical 29 pF)
Fast switching
100% avalanche tested
= 0.1Ω @V = 10 V
DS(on) GS
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
Improved dv/dt capability
175°C maximum junction temperature rating
Low level gate drive requirements allowing
direct operation from logic drives
D
!
D
"
! "
"
G !
"
G
S
D2-PAK
FQB Series
I2-PAK
FQI Series
G
D
S
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB17N08L / FQI17N08L
Units
V
V
I
Drain-Source Voltage
80
16.5
11.6
66
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 20
100
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
16.5
6.5
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
AR
dv/dt
6.5
Power Dissipation (T = 25°C) *
3.75
65
P
A
D
Power Dissipation (T = 25°C)
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.43
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
2.31
40
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
θJC
θJA
θJA
--
--
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
80
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
I
= 250 µA, Referenced to 25°C
0.08
V/°C
D
/
I
∆T
V
V
V
V
= 80 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 64 V, T = 150°C
10
DS
GS
GS
C
I
I
= 20 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -20 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
1.0
--
--
2.0
V
Ω
S
GS(th)
DS
GS
D
= 10 V, I = 8.25 A
R
Static Drain-Source
On-Resistance
0.076 0.100
0.090 0.115
GS
GS
D
DS(on)
= 5 V, I = 8.25 A
D
(Note 4)
g
= 25 V, I = 8.25 A
Forward Transconductance
--
12.4
--
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
400
120
29
520
155
37
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
7
25
590
50
ns
ns
d(on)
V
= 40 V, I = 16.5 A,
DD
D
290
20
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
75
160
11.5
--
ns
Q
Q
Q
8.8
2.0
5.4
nC
nC
nC
g
V
V
= 64 V, I = 16.5 A,
DS
D
= 5 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
16.5
66
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 16.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 16.5 A,
55
85
ns
nC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.5mH, I = 16.5A, V = 25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 16.5A, di/dt ≤ 300A/µs, V ≤ BV
Starting T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Typical Characteristics
VGS
Top :
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
101
100
101
Bottom : 3.0 V
℃
175
℃
25
℃
-55
※
Notes :
※
Notes :
μ
100
1. VDS = 25V
1. 250 s Pulse Test
2. TC = 25
μ
2. 250 s Pulse Test
℃
-1
10
10-1
100
101
0
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.3
0.2
0.1
0.0
101
100
10-1
VGS = 5V
VGS = 10V
※
Notes :
℃
175
℃
25
1. VGS = 0V
※
℃
Note : T = 25
μ
2. 250 s Pulse Test
J
0
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1100
1000
900
800
700
600
500
400
300
200
100
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = C
C
gd
VDS = 40V
VDS = 64V
※
Notes :
C
iss
1. VGS = 0 V
2. f = 1 MHz
6
Coss
4
C
rss
2
※
Note : ID = 16.5A
14
0
-1
10
100
101
0
2
4
6
8
10
12
16
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
※
Notes :
1. VGS = 10 V
2. ID = 8.25 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
18
15
12
9
Operation in This Area
is Limited by R DS(on)
102
101
100
100 µs
1 ms
10 ms
DC
6
※
Notes :
1. TC = 25 o
2. TJ = 175 o
3
C
C
3. Single Pulse
-1
0
25
10
100
101
102
50
75
100
125
150
175
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
0 .2
℃
/W M a x.
=
2 .3 1
0 .1
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
0 .0 5
1 0 -1
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
5V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
ID
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Package Dimensions
D2PAK
4.50 ±0.20
9.90 ±0.20
+0.10
–0.05
1.30
0.10 ±0.15
2.40 ±0.20
0.80 ±0.10
1.27 ±0.10
+0.10
0.50
–0.05
2.54 TYP
2.54 TYP
10.00 ±0.20
(8.00)
(4.40)
10.00 ±0.20
(2XR0.45)
0.80 ±0.10
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Package Dimensions (Continued)
I2PAK
4.50 ±0.20
9.90 ±0.20
+0.10
–0.05
1.30
1.27 ±0.10
1.47 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54 TYP
2.54 TYP
10.00 ±0.20
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
VCX™
ACEx™
FASTr™
QFET™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
GlobalOptoisolator™
GTO™
HiSeC™
QS™
QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
PowerTrench®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. F1
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80V N-Channel Logic Level QFET
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
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applications
New products
Product selection and
parametric search
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Contents
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General description | Features | Product
status/pricing/packaging
Product Change Notices
(PCNs)
PDF
Support
General description
e-mail this datasheet
[E-
Distributor and field sales
representatives
These N-Channel enhancement mode power
field effect transistors are produced using
Fairchild’s proprietary, planar stripe, DMOS
technology.
Quality and reliability
This page
Print version
Design tools
This advanced technology is especially tailored
to minimize on-state resistance, provide
superior switching performance, and withstand
high energy pulse in the avalanche and
commutation mode. These devices are well
suited for low voltage applications such as
automotive, high efficiency switching for
DC/DC converters, and DC motor control.
technical information
buy products
technical support
my Fairchild
company
back to top
Features
●
16.5A, 80V, R
10V
= 0.1Ω @V
=
DS(on)
GS
●
●
●
●
●
●
Low gate charge (typical 8.8nC)
Low Crss (typical 29pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature
rating
●
Low level gate drive requirments
allowing direct operation from logic
drives
back to top
Product status/pricing/packaging
Product
Product status
Full Production
Pricing*
Package type
Leads
Packing method
FQI17N08LTU
$0.54 TO-262(I2PAK)
3
RAIL
* 1,000 piece Budgetary Pricing
back to top
Home | Find products | Technical information | Buy products |
Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
FQB17N08L
Related Links
Products groups
80V N-Channel Logic Level QFET
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
How to order products
General description | Features | Product
status/pricing/packaging | Models
Product Change Notices
(PCNs)
PDF
Support
General description
e-mail this datasheet
[E-
Distributor and field sales
representatives
These N-Channel enhancement mode power
field effect transistors are produced using
Fairchild’s proprietary, planar stripe, DMOS
technology.
Quality and reliability
This page
Print version
Design tools
This advanced technology is especially tailored
to minimize on-state resistance, provide
superior switching performance, and withstand
high energy pulse in the avalanche and
commutation mode. These devices are well
suited for low voltage applications such as
automotive, high efficiency switching for
DC/DC converters, and DC motor control.
technical information
buy products
technical support
my Fairchild
company
back to top
Features
●
16.5A, 80V, R
10V
= 0.1Ω @V
=
DS(on)
GS
●
●
●
●
●
●
Low gate charge (typical 8.8nC)
Low Crss (typical 29pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature
rating
●
Low level gate drive requirments
allowing direct operation from logic
drives
back to top
Product status/pricing/packaging
Product
Product status Pricing*
Package type
Leads Packing method
FQB17N08LTM
Full Production
$0.54 TO-263(D2PAK)
2
TAPE REEL
* 1,000 piece Budgetary Pricing
back to top
Models
Package & leads
PSPICE
Condition
Temperature range
Software version
Revision date
Electrical
TO-263(D2PAK)-2
-55°C to 175°C
9.2
Oct 5, 2001
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© Copyright 2002 Fairchild Semiconductor
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