HGTG30N60C3D [ROCHESTER]
63A, 600V, N-CHANNEL IGBT, TO-247;
| 型号： | HGTG30N60C3D |
| 厂家： | 
Rochester Electronics |
| 描述： | 63A, 600V, N-CHANNEL IGBT, TO-247 局域网 电动机控制 栅 瞄准线 双极性晶体管 |
| 文件： | 总8页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG30N60C3D
Data Sheet
January 2009
File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
o
• 63A, 600V at T = 25 C
C
The HGTG30N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25 C and 150 C. The
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
TA49053.
o
• Typical Fall Time . . . . . . . . . . . . . . . 230ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
o
o
Packaging
JEDEC STYLE TO-247
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
E
C
G
Formerly Developmental Type TA49014.
Ordering Information
PART NUMBER
PACKAGE
BRAND
G30N60C3D
HGTG30N60C3D
TO-247
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTG30N60C3D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
63
A
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
30
25
C110
o
Average Diode Forward Current at 110 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
252
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
60A at 600V
208
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
STG
-40 to 150
260
C
J
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
4
µs
µs
GE
GE
15
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 25Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
-
MAX
-
UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
600
V
V
CES
ECS
C
C
GE
= 10mA, V
= 0V
T
15
25
-
-
GE
o
I
V
V
= BV
= BV
= 25 C
-
250
3.0
1.8
2.0
6.0
µA
mA
V
CES
CE
CE
CES
C
C
C
C
C
o
T
= 150 C
-
-
-
CES
,
o
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
V
I
V
= I
C110
T
= 25 C
1.5
1.7
5.2
CE(SAT)
C
= 15V
GE
o
T
= 150 C
-
V
o
V
I
= 250µA,
C
T
= 25 C
3.0
V
GE(TH)
V
= V
CE
GE
Gate to Emitter Leakage Current
Switching SOA
I
V
= ±20V
-
-
-
-
±100
nA
A
GES
GE
o
SSOA
T = 150 C,
V
V
= 480V
200
60
-
-
J
CE(PK)
CE(PK)
V
R
= 15V,
= 3Ω,
GE
= 600V
A
G
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
8.1
162
216
40
-
180
250
-
V
nC
nC
ns
ns
ns
ns
µJ
µJ
V
GEP
C
Q
I
V
= I
,
V
V
= 15V
G(ON)
C
C110
GE
GE
= 0.5 BV
CE
CES
= 20V
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C,
J
I
V
V
d(ON)I
= I
CE
C110,
= 0.8 BV
t
45
-
rI
CE(PK)
CES,
= 15V,
Current Turn-Off Delay Time
Current Fall Time
t
GE
= 3Ω,
320
230
1050
2500
1.75
400
275
-
d(OFF)I
R
G
t
fI
L = 100µH
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
Diode Forward Voltage
E
-
OFF
V
I
= 30A
EC
2.2
EC
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITIONS
MIN
TYP
52
42
-
MAX
60
UNITS
ns
Diode Reverse Recovery Time
t
I
I
= 30A, dI /dt = 100A/µs
-
-
-
-
rr
EC
EC
EC
= 1.0A, dI /dt = 100A/µs
50
ns
EC
o
Thermal Resistance
R
IGBT
0.6
1.3
C/W
θJC
o
Diode
-
C/W
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
CE
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Typical Performance Curves
o
150
125
100
75
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T = 25 C
C
150
125
100
75
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V = 10V
10.0V
CE
V
= 15.0V
12.0V
GE
9.5V
o
T
= 150 C
C
9.0V
8.5V
o
T
= 25 C
C
50
o
50
T
= -40 C
C
7.0V
8.0V
7.5V
25
25
0
0
4
6
8
10
12
0
2
4
6
8
10
V
, GATE TO EMITTER VOLTAGE (V)
GE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
150
125
100
75
150
125
100
75
PULSE DURATION = 250µs
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
o
T
= -40 C
C
DUTY CYCLE <0.5%, V
= 10V
GE
V
= 15V
GE
o
T
= 150 C
C
T
o
T
= -40 C
o
C
= 25 C
o
C
T
= 25 C
C
o
T
= 150 C
C
50
50
25
25
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
Typical Performance Curves (Continued)
70
25
500
o
V
= 15V
V
= 360V, R = 25Ω, T = 125 C
G J
GE
CE
450
400
350
300
250
200
150
100
60
50
40
30
20
10
0
20
15
10
5
I
SC
t
SC
25
50
75
100
125
150
10
11
12
13
15
14
o
T
, CASE TEMPERATURE ( C)
C
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
200
500
400
o
= 150 C, R = 3Ω, L = 100µH, V = 480V
CE(PK)
o
T
T
= 150 C, R = 3Ω, L = 100µH, V
= 480V
V
J
G
J
G
CE(PK)
100
V
= 10V
= 15V
GE
= 15V
= 10V
300
200
GE
50
40
V
GE
V
GE
30
20
100
10
10
20
30
40
50
60
50
60
20
30
40
10
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
500
500
o
= 150 C, R = 3Ω, L = 100µH, V
CE(PK)
o
= 150 C, R = 3Ω, L = 100µH, V = 480V
CE(PK)
T
= 480V
= 10V
T
J
G
J
G
400
300
V
GE
100
V
= 10V
= 15V
GE
200
V
GE
V
= 15V
GE
100
10
10
20
30
40
50
60
50
, COLLECTOR TO EMITTER CURRENT (A)
60
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
CE
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
Typical Performance Curves (Continued)
8.0
6.0
5.0
4.0
3.0
2.0
1.0
0
o
= 150 C, R = 3Ω, L = 100µH, V = 480V
CE(PK)
o
T
T
= 150 C, R = 3Ω, L = 100µH, V = 480V
CE(PK)
J
G
J
G
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
V
= 10V
GE
V
= 10V or 15V
GE
V
= 15V
GE
10
20
30
40
50
60
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
500
250
200
o
T
= 150 C, V
= 15V, L = 100µH
GE
J
o
o
T
= 150 C, T = 75 C
C
J
R
= 3Ω, L = 100µH
G
100
150
100
V
= 15V
GE
LIMITED BY
CIRCUIT
f
f
= 0.05/(t
+ t )
D(ON)I
+ E )
OFF
MAX1
MAX2
D(OFF)I
= (P - P )/(E
ON
10
D
C
V
= 10V
GE
P
P
= ALLOWABLE DISSIPATION
D
C
= CONDUCTION DISSIPATION
50
0
(DUTY FACTOR = 50%)
o
R
= 0.6 C/W
θJC
1
0
100
200
300
400
500
600
5
10
20
30
40
60
I
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
o
8000
I
= 3.54mA, R = 20Ω, T = 25 C
G (REF)
L
C
FREQUENCY = 400kHz
600
480
360
240
120
0
15
12
9
7000
6000
5000
4000
3000
2000
1000
0
C
IES
V
= 600V
CE
V
= 400V
CE
6
V
= 200V
CE
C
3
OES
C
RES
0
0
5
10
15
20
25
0
40
80
120
160
200
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Q
, GATE CHARGE (nC)
G
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
Typical Performance Curves (continued)
500
100
10µs
100µs
1ms
10ms
10
1
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
0.01
3. Single Pulse
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 17. SOA Characteristics
0
10
0.5
0.2
0.1
t
1
-1
10
P
D
0.05
t
2
0.02
0.01
DUTY FACTOR, D = t / t
1
2
SINGLE PULSE
PEAK T = (P X Z
X R
) + T
JC C
J
D
θ
JC
θ
-2
10
-5
-4
10
-3
-2
-1
1
0
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
Typical Performance Curves (continued)
200
60
50
40
30
20
10
o
T
= 25 C, dI /dt = 100A/µs
C
EC
t
rr
o
100 C
t
10
a
t
b
o
o
25 C
150 C
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1
5
10
30
V
, FORWARD VOLTAGE (V)
EC
I
, FORWARD CURRENT (A)
EC
Figure 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
Figure 20. RECOVERY TIME vs FORWARD CURRENT
Test Circuit and Waveforms
L = 100µH
90%
RHRP3060
10%
V
GE
E
E
OFF
ON
R
= 3Ω
G
V
CE
CE
90%
+
V
= 480V
DD
10%
d(OFF)I
I
-
t
t
rI
t
fI
t
d(ON)I
Figure 22. SWITCHING TEST WAVEFORMS
Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I ) plots are possible using the information shown
CE
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
or
MAX1
whichever is smaller at each point. The information is
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
is defined by f
MAX1
= 0.05/(t
+ t ).
D(ON)I
MAX1
D(OFF)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
D(OFF)I
and t
are defined in Figure 21.
D(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM D(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must
.
4. Devices should never be inserted into or removed from
circuits with power on.
D
D
JM
C
θJC
not exceed P . A 50% duty factor was used (Figure 13)
5. Gate Voltage Rating - Never exceed the gate-voltage
D
and the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
permanent damage to the oxide layer in the gate region.
P
= (V
x I )/2.
C
CE
CE
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
E
and E
are defined in the switching waveforms
OFF
ON
shown in Figure 21. E
power loss (I
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E ; i.e. the
is the integral of the instantaneous
ON
x V ) during turn-on and E
is the
CE
CE
OFF
OFF
collector current equals zero (I
CE
= 0).
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
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