IRF712 [ROCHESTER]

1.7A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB;
IRF712
型号: IRF712
厂家: Rochester Electronics    Rochester Electronics
描述:

1.7A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

文件: 总6页 (文件大小:873K)
下载:  下载PDF数据表文档文件

IRF712R

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.7A I(D) | TO-220AB

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37 ETC

IRF712R

1.7A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 ROCHESTER

IRF713

N-Channel Power MOSFETs, 2.25A, 350-400V

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83 FAIRCHILD

IRF713-002

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF713-002PBF

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF713-005PBF

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF713-006PBF

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF713-010

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF713-010PBF

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF713-011PBF

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF713-012PBF

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF713-013PBF

Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF713R

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 1.7A I(D) | TO-220AB

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41 ETC

IRF7171MPBF

Optimized for Synchronous Rectification

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0 IRF

IRF7171MPBF_15

Optimized for Synchronous Rectification

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0 IRF