ISL6406IR [ROCHESTER]

SWITCHING CONTROLLER, 770kHz SWITCHING FREQ-MAX, PQCC16, PLASTIC, MO-220-VHHB, MLFP, QFN-16;
ISL6406IR
型号: ISL6406IR
厂家: Rochester Electronics    Rochester Electronics
描述:

SWITCHING CONTROLLER, 770kHz SWITCHING FREQ-MAX, PQCC16, PLASTIC, MO-220-VHHB, MLFP, QFN-16

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ISL6406  
®
Data Sheet  
January 16, 2007  
FN9073.7  
Single Synchronous Buck Pulse-Width  
Modulation (PWM) Controller  
Features  
• Operates from 3.3V/5V Input  
The ISL6406 is an adjustable frequency, synchronous buck  
switching regulator optimized for generating lower voltages  
for the distributed DC/DC architectures. The ISL6406 offers  
an adjustable output voltage.  
• 0.8V to V Output Range  
IN  
- 0.8V Internal Reference  
- ±1.5% Reference Accuracy  
• Simple Single-Loop Control Design  
- Voltage-Mode PWM Control  
Designed to drive N-Channel MOSFETs in synchronous  
buck topology, the ISL6406 integrates the control, output  
adjustment and protection functions into a single package.  
• Fast Transient Response  
- High-Bandwidth Error Amplifier  
The ISL6406 provides simple, single feedback loop, voltage-  
mode control with fast transient response. The output  
voltage can be precisely regulated to as low as 0.8V. The  
error amplifier features a 15MHz gain-bandwidth product  
and 6V/μs slew rate which enables high converter bandwidth  
for fast transient performance.  
• Lossless, Programmable Overcurrent Protection  
- Uses Upper MOSFET’s r  
DS(on)  
• Programmable Switching Frequency 100kHz to 700kHz  
• External Frequency Synchronization  
• Two Device Options Available  
Protection from overcurrent conditions is provided by  
- ISL6406 . . . . . . . . . . . . . . . . Adjustable Output Voltage  
• Internal Soft-Start  
monitoring the r  
of the upper MOSFET to inhibit PWM  
DS(ON)  
operation appropriately. This approach simplifies the  
implementation and improves efficiency by eliminating the  
need for a current sense resistor.  
• QFN Package Option  
- QFN Compliant to JEDEC PUB95 MO-220 QFN - Quad  
Flat No Leads - Product Outline  
The wide programmable switching frequency range of  
100kHz to 700kHz allows the use of small surface mount  
inductors and capacitors. The device also provides external  
frequency synchronization making it an ideal choice for  
DC/DC converter applications.  
- QFN Near Chip Scale Package Footprint; Improves  
PCB Efficiency, Thinner in Profile  
• Pb-Free Plus Anneal Available (RoHS Compliant)  
- Designated with “Z” Suffix (Refer to Note)  
Applications  
• 3V/5V DC/DC Converter Modules  
• Distributed DC/DC 3.3V, 2.5V and 1.8V Power  
Architectures for DSP, Logic, and Memory  
• Power Supplies for Microprocessors  
- PCs  
- Embedded Controllers  
• Memory Supplies  
• Personal Computer Peripherals  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2003-2004, 2007. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
ISL6406  
Pinouts  
ISL6406,  
(16 LD SOIC/TSSOP)  
TOP VIEW  
ISL6406,  
(16 LD QFN)  
TOP VIEW  
GND  
1
2
3
4
5
6
7
8
16 UGATE  
LGATE  
CPVOUT  
OCSET  
CT1  
15 BOOT  
14 PHASE  
13 VCC  
16 15 14 13  
CPVOUT  
OCSET  
CT1  
PHASE  
VCC  
1
2
3
4
12  
11  
10  
9
12 CPGND  
11 COMP  
10 VOUT  
CT2  
CPGND  
COMP  
RT  
CT2  
9
FB  
SYNC/EN  
5
6
7
8
Ordering Information  
PART NUMBER*  
PART MARKING  
ISL6406IB  
6406IBZ  
TEMP. RANGE (°C)  
-40 to +85  
PACKAGE  
16 Ld SOIC  
PKG. DWG. #  
ISL6406IB  
M16.15  
M16.15  
L16.5x5B  
ISL6406IBZ (See Note)  
ISL6406IR  
-40 to +85  
16 Ld SOIC (Pb-free)  
16 Ld 5x5 QFN  
ISL 6406IR  
ISL6406 IRZ  
ISL64 06IV  
6406 IVZ  
-40 to +85  
ISL6406IRZ (See Note)  
ISL6406IV  
-40 to +85  
16 Ld 5x5 QFN (Pb-free) L16.5x5B  
-40 to +85  
16 Ld TSSOP  
M16.173  
M16.173  
ISL6406IVZ (See Note)  
-40 to +85  
16 Ld TSSOP (Pb-free)  
*Add “-T” suffix to part number for tape and reel packaging.  
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin  
plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are  
MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.  
FN9073.7  
January 16, 2007  
2
ISL6406  
Functional Block Diagram  
VCC  
CPVOUT  
CT1  
CHARGE  
PUMP  
SDWN  
POWER-ON  
RESET (POR)  
CT2  
CPGND  
OCSET  
BOOT  
+
-
SOFTSTART  
OC  
UGATE  
COMPARATOR  
20μA  
PHASE  
PWM  
COMPARATOR  
ERROR  
AMP  
GATE  
CONTROL  
LOGIC  
+
-
+
-
+
-
PWM  
0.8V  
SDWN  
LGATE  
FB  
VOUT  
COMP  
OSCILLATOR  
SYNC/ENRT  
GND  
FN9073.7  
January 16, 2007  
3
ISL6406  
Typical Application Schematic for 5V Input  
V
IN  
5V ±10%  
C
C
BULK  
IN  
VCC  
OCSET  
CPVOUT  
BOOT  
CT1  
CT2  
R
OCSET  
NC  
C
DCPL  
D
C
BOOT  
BOOT  
ISL6406  
C
HF  
RT  
R
BOOT  
CPGND  
R
T
UGATE  
PHASE  
GND  
Q
Q
1
2
L
OUT  
C
V
OUT  
VOUT  
VCC  
LGATE  
FB  
OUT  
SYNC/EN  
COMP  
C
I
R
FB  
R
C
F
F
R
OFFSET  
Typical Application Schematic for 3.3V Input  
V
IN  
3.3V ±10%  
C
C
BULK  
IN  
VCC  
OCSET  
CPVOUT  
BOOT  
CT1  
R
OCSET  
C
PUMP  
C
DCPL  
D
C
BOOT  
BOOT  
CT2  
RT  
ISL6406  
C
HF  
R
BOOT  
CPGND  
R
T
UGATE  
PHASE  
GND  
Q
Q
1
L
OUT  
C
V
OUT  
VOUT  
VCC  
LGATE  
FB  
OUT  
SYNC/EN  
COMP  
2
C
I
R
FB  
R
C
F
F
R
OFFSET  
FN9073.7  
January 16, 2007  
4
ISL6406  
Absolute Maximum Ratings  
Thermal Information  
Supply Voltage, VCC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V  
Absolute Boot Voltage, V . . . . . . . . . . . . . . . . . . . . . . . +15.0V  
Thermal Resistance (Typical)  
θ
(°C/W)  
θ
(°C/W)  
JC  
JA  
BOOT  
Upper Driver Supply Voltage, V  
SOIC (Note 2) . . . . . . . . . . . . . . . . . . .  
TSSOP (Note 2). . . . . . . . . . . . . . . . . .  
QFN (Notes 3, 4) . . . . . . . . . . . . . . . . .  
Maximum Junction Temperature (Plastic Package) .-55°C to +150°C  
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C  
(SOIC - Lead Tips Only)  
70  
90  
35  
N/A  
N/A  
4.5  
- V  
. . . . . . . . . . . +6.0V  
BOOT  
PHASE  
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V  
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2  
Operating Conditions  
Temperature Range  
ISL6406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C  
ISL6406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C  
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3V ±10%  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTES:  
1. Please refer to the Typical Application Schematics (page 3) for 3.3V/5V input configuration.  
2. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.  
JA  
3. θ is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
JA  
Tech Brief TB379.  
4. For θ , the “case temp” location is the center of the exposed metal pad on the package underside.  
JC  
Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application  
Schematic. V  
= +3.3V. Typical values are at T = +25°C.  
A
CC  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
SUPPLY  
CC  
Shutdown Supply Current  
SYNC/EN = GND  
-
20  
50  
μA  
Operating Supply Current (Note 5)  
REFERENCE VOLTAGE  
RT = 64.9kΩ  
7
9.8  
11.5  
mA  
Nominal Reference Voltage  
Reference Voltage Tolerance  
-
0.8  
-
V
-1.5  
-1.8  
-2.1  
-
-
-
1.5  
1.8  
2.1  
%
%
%
T
= 0°C to +70°C  
A
T
= -40°C to +85°C  
A
ERROR AMPLIFIER  
Open Loop Voltage Gain (Note 6)  
Gain-Bandwidth Product (Note 6)  
Slew Rate (Note 5)  
-
82  
-
-
-
dB  
14  
MHz  
V/μs  
COMP = 10pF  
4.65  
6.0  
9.2  
CHARGE PUMP  
Nominal Charge Pump Output  
Charge Pump Output Regulation  
POWER-ON RESET  
V
= 3.3V, No Load  
4.8  
5.1  
-
5.5  
5.0  
V
CC  
-5.0  
%
Rising CPVOUT POR Threshold  
T
= 0°C to +70°C  
4.20  
4.1  
4.35  
4.35  
0.5  
4.5  
4.6  
0.9  
V
V
V
A
T
= -40°C to +85°C  
A
CPVOUT POR Threshold Hysteresis  
OSCILLATOR  
0.3  
Gate Output Frequency Range  
RT = 200kΩ  
80  
100  
300  
715  
1.4  
120  
340  
770  
1.7  
kHz  
kHz  
kHz  
V
RT = 64.9kΩ  
RT = 26.1kΩ  
Peak-to-Peak ΔV  
250  
650  
1.1  
Sawtooth Amplitude  
OSC  
FN9073.7  
January 16, 2007  
5
ISL6406  
Electrical Specifications Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application  
Schematic. V  
= +3.3V. Typical values are at T = +25°C. (Continued)  
A
CC  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Sync. Frequency Range (Note 6)  
1.1 Times the natural switching  
frequency.  
110  
-
770  
kHz  
Minimum Sync Pulse Width (Note 6)  
PWM Maximum Duty Cycle  
GATE DRIVER OUTPUT (Note 6)  
Upper Gate Source Current  
Upper Gate Sink Current  
Lower Gate Source Current  
Lower Gate Sink Current  
SOFT-START  
-
-
40  
96  
100  
-
ns  
%
V
V
- V  
= 5V, V = 4V  
UGATE  
-
-
-
-
-1  
1
-
-
-
-
A
A
A
A
BOOT  
PHASE  
= 3.3V, V  
= 4V  
LGATE  
-1  
2
VCC  
Soft-Start Slew Rate  
f = 300kHz, T = 0°C to +70°C  
6.2  
6.2  
-
6.7  
6.7  
7.3  
7.6  
-
ms  
ms  
A
f = 300kHz, T = -40°C to +85°C  
A
Internal Digital Circuit Clock Count  
(Soft-start time varies with frequency)  
2048  
Clk Cycles  
OVERCURRENT  
OCSET Current Source  
T
= 0°C to +70°C  
18  
16  
20  
20  
22  
23  
μA  
μA  
A
T
= -40°C to +85°C  
A
NOTES:  
5. This is the V  
current consumed when the device is active but not switching.  
CC  
6. Guaranteed by design.  
Typical Performance Curve  
0.81  
0.805  
0.8  
0.795  
0.79  
0.785  
0.78  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80  
TEMPERATURE (°C)  
FIGURE 1. REFERENCE VOLTAGE vs TEMPERATURE  
FN9073.7  
January 16, 2007  
6
ISL6406  
Pin Descriptions  
CPVOUT - This pin represents the output of the charge  
pump. The voltage at this pin is the bias voltage for the IC.  
Connect a decoupling capacitor from this pin to ground. The  
value of the decoupling capacitor should be at least 10x the  
value of the charge pump capacitor. This pin may be tied to  
the bootstrap circuit as the source for creating the BOOT  
voltage.  
BOOT - This pin provides ground referenced bias voltage to  
the upper MOSFET driver. A bootstrap circuit is used to  
create a voltage suitable to drive a logic-level N-Channel  
MOSFET. A large (~1MΩ) resistor should be connected from  
this pin to GND. The purpose of this resistor is to discharge  
the BOOT pin during a shutdown condition, SYNC/EN =  
LOW so that the gate drivers are quickly powered off by this  
bleed resistor.  
CT1 and CT2 - These pins are the connections for the  
external charge pump capacitor. A minimum of a 0.1μF  
ceramic capacitor is recommended for proper operation of  
the IC.  
UGATE - Connect this pin to the upper MOSFET’s gate. This  
pin provides the PWM-controlled gate drive for the upper  
MOSFET. This pin is also monitored by the adaptive shoot-  
through protection circuitry to determine when the upper  
MOSFET has turned off.  
OCSET - Connect a resistor (R  
) from this pin to the  
, an internal 20μA  
), and the upper MOSFET  
OCSET  
drain of the upper MOSFET (V ). R  
IN OCSET  
current source (I  
OCSET  
GND - This pin represents the signal and power ground for  
the IC. Tie this pin to the ground island/plane through the  
lowest impedance connection available.  
on-resistance (r  
) set the converter overcurrent (OC)  
DS(ON)  
trip point according to Equation 1:  
LGATE - Connect this pin to the lower MOSFET’s gate. This  
pin provides the PWM-controlled gate drive for the lower  
MOSFET. This pin is also monitored by the adaptive shoot-  
through protection circuitry to determine when the lower  
MOSFET has turned off.  
(I  
)(R  
)
OCSET  
(EQ. 1)  
OCSET  
I
= -------------------------------------------------------  
PEAK  
r
DS(ON)  
An overcurrent trip cycles the soft-start function.  
VOUT - This pin provides the external switcher output  
COMP and FB - COMP and FB are the available external  
pins of the error amplifier. The FB pin is the inverting input of  
the internal error amplifier and the COMP pin is the error  
amplifier output. These pins are used to compensate the  
control feedback loop of the converter.  
voltage to the IC as feedback for the 1.8V fixed output  
voltage option. Leave this pin open on the ISL6406 for the  
adjustable output voltage option.  
VCC - This pin provides bias supply for the ISL6406.  
Connect a well-coupled 3.3V supply to this pin.  
CPGND - This pin represents the signal and power ground  
for the charge pump. Tie this pin to the ground island/plane  
through the lowest impedance connection available.  
PHASE - Connect this pin to the upper MOSFET’s source.  
This pin is used to monitor the voltage drop across the upper  
MOSFET for overcurrent protection.  
SYNC/EN - This is a dual-function pin. To synchronize with  
an external clock, apply a clock with a frequency 1.1 to 2.0  
times higher than the part’s natural frequency to this pin. The  
device may be disabled by tying this pin to ground. In this  
shutdown mode, all functions are disabled and the device  
will draw <50μA supply current.  
RT - Connect an external resistor from this pin to ground for  
frequency selection. Refer to RT vs Frequency curve of  
Figure 3.  
FN9073.7  
January 16, 2007  
7
ISL6406  
Functional Description  
200  
180  
160  
140  
120  
100  
80  
Initialization  
The ISL6406 automatically initializes upon receipt of power.  
Special sequencing of the input supplies is not necessary.  
The Power-On Reset (POR) function continually monitors the  
the output voltage of the charge pump. During POR, the charge  
pump operates on a free running oscillator. Once the POR level  
is reached, the charge pump oscillator is synched to the PWM  
oscillator. The POR function also initiates the soft-start  
operation after the charge pump output voltage exceeds its  
POR threshold.  
60  
40  
20  
Soft-Start  
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750  
FREQUENCY (kHz)  
The POR function initiates the digital soft-start sequence.  
The PWM error amplifier reference is clamped to a level  
proportional to the soft-start voltage. As the soft-start voltage  
slews up, the PWM comparator generates PHASE pulses of  
increasing width that charge the output capacitor(s). This  
method provides a rapid and controlled output voltage rise.  
The soft start sequence typically takes about 6.5ms.  
FIGURE 3. RT vs FREQUENCY  
Shoot-Through Protection  
A shoot-through condition occurs when both the upper  
MOSFET and lower MOSFET are turned on simultaneously,  
effectively shorting the input voltage to ground. To protect  
the regulator from a shoot-through condition, the ISL6406  
incorporates specialized circuitry which insures that the  
MOSFETs are not ON simultaneously.  
(1V/DIV)  
CPVOUT (5V)  
The adaptive shoot-through protection utilized by the  
ISL6406 looks at the lower gate drive pin, LGATE, and the  
upper gate drive pin, UGATE, to determine whether a  
MOSFET is ON or OFF. If the voltage from UGATE or from  
LGATE to GND is less than 0.8V, then the respective  
MOSFET is defined as being OFF and the other MOSFET is  
turned ON. This method of shoot-through protection allows  
the regulator to sink or source current.  
VCC (3.3V)  
V
(2.50V)  
OUT  
0V  
Since the voltage of the lower MOSFET gate and the upper  
MOSFET gate are being measured to determine the state of  
the MOSFET, the designer is encouraged to consider the  
repercussions of introducing external components between  
the gate drivers and their respective MOSFET gates before  
actually implementing such measures. Doing so may  
interfere with the shoot-through protection.  
t3  
t0  
t1  
t2  
TIME  
FIGURE 2. SOFT-START INTERVAL  
Figure 2 shows the soft-start sequence for a typical  
application. At t0, the +3.3V VCC voltage starts to ramp. At  
time t1, the Charge Pump begins operation and the +5V  
CPVOUT IC bias voltage starts to ramp up. Once the voltage  
on CPVOUT crosses the POR threshold at time t2, the  
output begins the soft-start sequence. The triangle waveform  
from the PWM oscillator is compared to the rising error  
amplifier output voltage. As the error amplifier voltage  
increases, the pulse-width on the UGATE pin increases to  
reach the steady-state duty cycle at time t3.  
Output Voltage Selection  
The output voltage can be programmed to any level between  
V
and the internal reference, 0.8V. An external resistor  
IN  
divider is used to scale the output voltage relative to the  
reference voltage and feed it back to the inverting input of  
the error amplifier, see Figure 4. However, since the value of  
R1 affects the values of the rest of the compensation  
components, it is advisable to keep its value less than 5K.  
R4 can be calculated based on Equation 2:  
Frequency Selection  
The ISL6406 offers adjustable frequency from 100kHz to  
700kHz by changing external resistor connected at pin RT.  
Figure 3 shows the typical RT vs Frequency variation curve.  
(R1)(0.8V)  
(EQ. 2)  
R4 = ------------------------------------------  
V
(0.8V)  
OUT1  
If the output voltage desired is 0.8V, simply route the output  
back to the FB pin through R1, but do not populate R4.  
FN9073.7  
January 16, 2007  
8
ISL6406  
.
converter’s efficiency and reduces cost by eliminating a  
+3.3V  
current sensing resistor. The over current function cycles the  
soft-start function in a hiccup mode to provide fault  
protection. A resistor (R  
trip level (see Typical Application diagrams). An internal  
20µA (typical) current sink develops a voltage across  
) programs the over current  
OCSET  
VIN  
VCC  
CPVOUT  
BOOT  
R
that is referenced to V . When the voltage across  
OCSET  
IN  
D1  
C4  
the upper MOSFET (also referenced to V ) exceeds the  
voltage across R  
soft-start sequence.  
IN  
, the over current function initiates a  
OCSET  
Q1  
UGATE  
PHASE  
L
OUT  
V
OUT  
ISL6406,  
Q2  
LGATE  
+
C
V
(2.5V)  
OUT  
OUT  
FB  
C1  
R1  
C3  
COMP  
R3  
C2  
R2  
R4  
0V  
INTERNAL SOFT-START FUNCTION  
DELAY INTERVAL  
FIGURE 4. OUTPUT VOLTAGE SELECTION  
Frequency Synchronization and Enable  
The external frequency synchronization and enable  
functions are combined in SYNC/EN pin. This pin is TTL  
compatible for VCC = 3.3V or 5V. The device is disabled if  
the input to this pin is TTL LOW for more than 40μs (typ.); it  
is enabled if the input is TTL HIGH without delay. When  
disabling the IC, the charge pump is turned off and the  
BOOT pin is left charged at ~5V. In some cases this charge  
will inadvertant leak through the upper gate driver and can  
possibly turn on the upper FET. To avoid this, it is  
t0  
t1  
t2  
TIME  
FIGURE 5. OVERCURRENT PROTECTION RESPONSE  
Figure 5 illustrates the protection feature responding to an  
overcurrent event. At time t0, an overcurrent condition is  
sensed across the upper MOSFET. As a result, the regulator  
is quickly shutdown and the internal soft-start function begins  
producing soft-start ramps. The delay interval seen by the  
output is equivalent to three soft-start cycles. The fourth  
internal soft-start cycle initiates a normal soft-start ramp of the  
output, at time t1. The output is brought back into regulation  
by time t2, as long as the overcurrent event has cleared. Had  
the cause of the over current still been present after the delay  
interval, the over current condition would be sensed and the  
regulator would be shut down again for another delay interval  
of three soft-start cycles. The resulting hiccup mode style of  
protection would continue to repeat indefinitely.  
recommended that a 1MΩ ‘bleed’ resistor be connected from  
the BOOT pin to GND. This resistor is shown in the typical  
application schematic in page 4 as R  
.
BOOT  
The SYNC/EN pin is monitored by the internal timer. The  
timer allows SYNC pulses (TTL LOW level) to pass through,  
as long as the pulses are shorter than 22μs. The minimum  
SYNC pulse width is 40ns (typ.).  
The oscillator can SYNC to an external frequency of  
between 1.1 times and 2.0 times the free-running frequency.  
Loop acquisition time is about 200 clock cycles. The timing  
resistor (RT) is always required, regardless of whether  
SYNC pulses are being used or not.  
The overcurrent function will trip at a peak inductor current  
(I  
) determined by Equation 3:  
peak  
For instance, if RT is selected such that the switching  
frequency is 100kHz then the ISL6406 can be synchronized  
to a switching frequency from 110kHz to 200kHz.  
(I  
)(R  
)
OCSET  
OCSET  
(EQ. 3)  
I
= -------------------------------------------------------  
PEAK  
r
DS(ON)  
Overcurrent Protection  
where I  
is the internal OCSET current source (20µA  
OCSET  
The overcurrent function protects the converter from a  
shorted output by using the upper MOSFET on-resistance,  
typical). The OC trip point varies mainly due to the MOSFET  
variations. To avoid overcurrent tripping in the  
r
DS(ON)  
r
, to monitor the current. This method enhances the  
DS(ON)  
FN9073.7  
January 16, 2007  
9
ISL6406  
normal operating load range, find the R  
Equation 3 with:  
resistor from  
spikes can degrade efficiency, radiate noise into the circuit,  
and lead to device overvoltage stress.  
OCSET  
1. The maximum r  
temperature.  
at the highest junction  
Careful component layout and printed circuit board design  
minimizes the voltage spikes in the converters. As an example,  
consider the turn-off transition of the PWM MOSFET. Prior to  
turn-off, the MOSFET is carrying the full load current. During  
turn-off, current stops flowing in the MOSFET and is picked up  
by the lower MOSFET. Any parasitic inductance in the switched  
current path generates a large voltage spike during the  
switching interval. Careful component selection, tight layout of  
the critical components, and short, wide traces minimizes the  
magnitude of voltage spikes.  
DS(ON)  
2. The minimum I  
3. Determine I  
from the specification table.  
OCSET  
for, I  
> I  
+ (ΔI/2)  
OUT(MAX)  
PEAK  
PEAK  
where ΔI is the output inductor ripple current.  
For an equation for the ripple current see the section under  
Component Selection Guidelines titled “Output Inductor  
Selection” on page 12. A small ceramic capacitor should be  
placed in parallel with R  
to smooth the voltage across  
in the presence of switching noise on the input  
OCSET  
R
OCSET  
voltage.  
There are two sets of critical components in a DC/DC  
converter using the ISL6406. The switching components are  
the most critical because they switch large amounts of  
energy, and therefore tend to generate large amounts of  
noise. Next, are the small signal components which connect  
to sensitive nodes or supply critical bypass current and  
signal coupling.  
When the controller enters hiccup mode the differential  
voltage across the error amplifier forces the COMP pin to rail  
HIGH to approximately 5V. When the controller begins a new  
soft start sequence out of hiccup mode the COMP pin will  
need to discharge down to approximately 1.2V near the  
beginning of the PWM ramp in order to start up correctly. To  
ensure the controller can discharge the COMP pin fast  
enough the R and C from COMP to FB must not have too  
high a time constant. For time constant recommendations  
refer to the Feedback Compensation section below.  
A multi-layer printed circuit board is recommended. Figure 6  
shows the connections of the critical components in the  
+3.3V V  
IN  
Current Sinking  
ISL6406  
VCC  
The ISL6406 incorporates a MOSFET shoot-through  
protection method which allows a converter to sink current  
as well as source current. Care should be exercised when  
designing a converter with the ISL6406 when it is known that  
the converter may sink current. When the converter is  
sinking current, it is behaving as a boost converter that is  
regulating its input voltage. This means that the converter is  
boosting current into the input rail of the regulator. If there is  
nowhere for this current to go, such as to other distributed  
loads on the rail or through a voltage limiting protection  
device, the capacitance on this rail will absorb the current.  
This situation will allow the voltage level of the input rail to  
increase. If the voltage level of the rail is boosted to a level  
that exceeds the maximum voltage rating of any  
C
VCC  
CPVOUT  
C
BP  
C
IN  
GND  
D1  
BOOT  
C
BOOT  
Q1  
UGATE  
PHASE  
L
OUT  
V
PHASE  
OUT  
components attached to the input rail, then those  
Q2  
C
LGATE  
COMP  
OUT  
components may experience an irreversible failure or  
experience stress that may shorten their lifespan. Ensuring  
that there is a path for the current to flow other than the  
capacitance on the rail will prevent this failure mode.  
C
2
C
1
R
2
R
1
FB  
Application Guidelines  
C
R
3
3
R4  
Layout Considerations  
Layout is very important in high frequency switching  
converter design. With power devices switching, the  
resulting current transitions from one device to another  
cause voltage spikes across the interconnecting  
impedances and parasitic circuit elements. These voltage  
KEY  
ISLAND ON POWER PLANE LAYER  
ISLAND ON CIRCUIT PLANE LAYER  
VIA CONNECTION TO GROUND PLANE  
FIGURE 6. PRINTED CIRCUIT BOARD POWER PLANES  
AND ISLANDS  
FN9073.7  
January 16, 2007  
10  
ISL6406  
converter. Note that capacitors C and C  
IN  
could each  
OUT  
represent numerous physical capacitors.  
V
IN  
DRIVER  
DRIVER  
OSC  
PWM  
Dedicate one solid layer, usually a middle layer of the PC  
board, for a ground plane and make all critical component  
ground connections with vias to this layer. Dedicate another  
solid layer as a power plane and break this plane into  
smaller islands of common voltage levels. Keep the metal  
runs from the PHASE terminals to the output inductor short.  
The power plane should support the input power and output  
power nodes. Use copper-filled polygons on the top and  
bottom circuit layers for the phase nodes. Use the remaining  
printed circuit layers for small signal wiring. The wiring traces  
from the GATE pins to the MOSFET gates should be kept  
short and wide enough to easily handle the 1A of drive  
current. The switching components should be placed close  
to the ISL6406 first. Minimize the length of the connections  
L
O
COMPARATOR  
V
OUT  
-
PHASE  
+
ΔV  
C
O
OSC  
ESR  
(PARASITIC)  
Z
FB  
V
E/A  
Z
-
IN  
+
REFERENCE  
ERROR  
AMP  
DETAILED COMPENSATION COMPONENTS  
Z
FB  
V
OUT  
C
1
Z
IN  
between the input capacitors, C , and the power switches  
IN  
C
C
R
R
3
2
3
2
by placing them nearby. Position both the ceramic and bulk  
input capacitors as close to the upper MOSFET drain and  
islands as possible. Position the output inductor and output  
capacitors between the upper and lower MOSFETs and the  
load.  
R
1
COMP  
FB  
-
+
The critical small signal components include any bypass  
capacitors, feedback components, and compensation  
ISL6406  
REFERENCE  
components. Position the bypass capacitor, C , close to  
BP  
FIGURE 7. VOLTAGE-MODE BUCK CONVERTER  
COMPENSATION DESIGN  
the VCC pin with a via directly to the ground plane. Place  
the PWM converter compensation components close to the  
FB and COMP pins. The feedback resistors for both  
regulators should also be located as close as possible to  
the relevant FB pin with vias tied straight to the ground  
plane as required.  
Modulator Break Frequency Equations  
1
f
= -----------------------------  
(EQ. 4)  
(EQ. 5)  
LC  
2Π  
L C  
O O  
Feedback Compensation  
1
f
= ----------------------------------------  
ESR  
2Π(ESR)(C  
)
Figure 7 highlights the voltage-mode control loop for a  
synchronous-rectified buck converter. The output voltage  
O
The compensation network consists of the error amplifier  
(internal to the ISL6406) and the impedance networks Z  
(V  
) is regulated to the Reference voltage level. The error  
OUT  
IN  
amplifier (Error Amp) output (V ) is compared with the  
oscillator (OSC) triangular wave to provide a pulse-width  
modulated (PWM) wave with a peak amplitude of V at the  
PHASE node. The PWM wave is smoothed by the output  
E/A  
and Z .The goal of the compensation network is to provide  
FB  
a closed-loop transfer function with the highest 0dB crossing  
frequency (f 0dB ) and adequate phase margin. Phase  
margin is the difference between the closed loop phase at  
f 0dB and 180°.  
IN  
filter (L and C ).The modulator transfer function is the  
O
small-signal transfer function of V  
/V . This function is  
OUT E/A  
dominated by a DC Gain and the output filter (L and C ),  
The equations below relate the compensation network’s  
poles, zeros and gain to the components (R , R , R , C , C  
2
O
O
with a double pole break frequency at F and a zero at  
LC  
1
2
3
1
F
. The DC Gain of the modulator is simply the input  
and C ) in Figure 7. Use these guidelines for locating the  
ESR  
3
voltage (V ) divided by the peak-to-peak oscillator voltage,  
poles and zeros of the compensation network:  
IN  
V
.
OSC  
1. Pick gain (R /R ) for desired converter bandwidth.  
2
1
2. Place first zero below filter’s double pole (~75% F ).  
LC  
3. Place second zero at filter’s double pole.  
4. Place first pole at the ESR zero.  
5. Place second pole at half the switching frequency.  
6. Check gain against error amplifier’s open-loop gain.  
7. Estimate phase margin—repeat if necessary.  
FN9073.7  
January 16, 2007  
11  
ISL6406  
During overcurrent hiccup mode the COMP pin will rail HIGH  
IC from 3.3V. Selecting the proper capacitance value is  
important so that the bias current draw and the current  
required by the MOSFET gates do not overburden the  
capacitor. A conservative approach is presented in  
Equation 6.  
to about 5V. When the soft start sequence is initiated out of  
hiccup mode the COMP pin will have to discharge from 5V to  
about 1.2V, the beginning of the PWM ramp in order to start  
up properly. Use of a small COMP to FB Rs and Cs as  
possible is recommended. The recommended value for C2  
in Figure 7 is 4700pF or less.  
I
+ I  
GATE  
(f )  
S
BIAS  
V
(EQ. 6)  
C
= -------------------------------------- (1 . 5 )  
PUMP  
CC  
Compensation Break Frequency  
Equations  
Output Capacitor Selection  
An output capacitor is required to filter the output and supply  
the load transient current. The filtering requirements are a  
function of the switching frequency and the ripple current.  
The load transient requirements are a function of the slew  
rate (di/dt) and the magnitude of the transient load current.  
These requirements are generally met with a mix of  
capacitors and careful layout.  
Figure 8 shows an asymptotic plot of the DC/DC converter’s  
gain vs frequency. The actual Modulator Gain has a high  
gain peak due to the high Q factor of the output filter and is  
not shown in Figure 8. Using the above guidelines should  
give a Compensation Gain similar to the curve plotted. The  
open loop error amplifier gain bounds the compensation  
gain. Check the compensation gain at F with the  
P2  
Modern digital ICs can produce high transient load slew  
rates. High-frequency capacitors initially supply the transient  
and slow the current load rate seen by the bulk capacitors.  
The bulk filter capacitor values are generally determined by  
the ESR (Effective Series Resistance) and voltage rating  
requirements rather than actual capacitance requirements.  
capabilities of the error amplifier. The Closed Loop Gain is  
constructed on the graph of Figure 8 by adding the  
Modulator Gain (in dB) to the Compensation Gain (in dB).  
This is equivalent to multiplying the modulator transfer  
function to the compensation transfer function and plotting  
the gain. The compensation gain uses external impedance  
networks Z and Z to provide a stable, high bandwidth  
FB IN  
High-frequency decoupling capacitors should be placed as  
close to the power pins of the load as physically possible. Be  
careful not to add inductance in the circuit board wiring that  
could cancel the usefulness of these low inductance  
components. Consult with the manufacturer of the load on  
specific decoupling requirements. Use only specialized  
low-ESR capacitors intended for switching-regulator  
applications for the bulk capacitors. The bulk capacitor’s  
ESR will determine the output ripple voltage and the initial  
voltage drop after a high slew-rate transient. An aluminum  
electrolytic capacitor’s ESR value is related to the case size  
with lower ESR available in larger case sizes. However, the  
Equivalent Series Inductance (ESL) of these capacitors  
increases with case size and can reduce the usefulness of  
the capacitor to high slew-rate transient loading.  
(BW) overall loop. A stable control loop has a gain crossing  
with -20dB/decade slope and a phase margin greater than  
45 degrees. Include worst-case component variations when  
determining phase margin.  
OPEN LOOP  
ERROR AMP GAIN  
F
F
F
P1  
F
Z1  
Z2  
P2  
100  
80  
V
IN  
---------------  
20log  
V
OSC  
60  
40  
COMPENSATION  
GAIN  
20  
0
R2  
-------  
20log  
R1  
Unfortunately, ESL is not a specified parameter. Work with  
your capacitor supplier and measure the capacitor’s  
impedance with frequency to select a suitable component. In  
most cases, multiple electrolytic capacitors of small case  
size perform better than a single large case capacitor.  
-20  
-40  
-60  
MODULATOR  
GAIN  
LOOP GAIN  
10M  
F
F
ESR  
LC  
10  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
Output Inductor Selection  
FIGURE 8. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN  
The output inductor is selected to meet the output voltage  
ripple requirements and minimize the converter’s response  
time to the load transient. The inductor value determines the  
converter’s ripple current and the ripple voltage is a function  
of the ripple current. The ripple voltage and current are  
approximated by Equations 7 and 8:  
Component Selection Guidelines  
V
- V  
V
OUT  
IN  
OUT  
(EQ. 7)  
ΔI =  
Charge Pump Capacitor Selection  
x
f x L  
V
s
IN  
A capacitor across pins CT1 and CT2 is required to create  
the proper bias voltage for the ISL6406 when operating the  
FN9073.7  
January 16, 2007  
12  
ISL6406  
The maximum RMS current required by the regulator may be  
closely approximated through Equation 11:  
(EQ. 8)  
ΔV  
= ΔI x ESR  
OUT  
2
VOUT  
-------------  
VIN  
VIN VOUT VOUT  
2
1
12  
⎞ ⎞  
------ ---------------------------- -------------  
IRMS  
=
× IOUT  
+
×
×
Increasing the value of inductance reduces the ripple current  
and voltage. However, the large inductance values reduce  
the converter’s response time to a load transient.  
⎠ ⎠  
VIN  
L × fs  
MAX  
MAX  
(EQ. 11)  
For a through hole design, several electrolytic capacitors may  
be needed. For surface mount designs, solid tantalum  
capacitors can be used, but caution must be exercised with  
regard to the capacitor surge current rating. These capacitors  
must be capable of handling the surge-current at power-up.  
Some capacitor series available from reputable manufacturers  
are surge current tested.  
One of the parameters limiting the converter’s response to  
a load transient is the time required to change the inductor  
current. Given a sufficiently fast control loop design, the  
ISL6406 will provide either 0% or 100% duty cycle in  
response to a load transient. The response time is the time  
required to slew the inductor current from an initial current  
value to the transient current level. During this interval the  
difference between the inductor current and the transient  
current level must be supplied by the output capacitor.  
Minimizing the response time can minimize the output  
capacitance required.  
MOSFET Selection/Considerations  
The ISL6406 requires two N-Channel power MOSFETs.  
These should be selected based upon r  
, gate supply  
DS(ON)  
requirements, and thermal management requirements.  
The response time to a transient is different for the  
application of load and the removal of load. Equations 9 and  
10 give the approximate response time interval for  
application and removal of a transient load:  
In high-current applications, the MOSFET power dissipation,  
package selection and heatsink are the dominant design  
factors. The power dissipation includes two loss components;  
conduction loss and switching loss. The conduction losses are  
the largest component of power dissipation for both the upper  
and the lower MOSFETs. These losses are distributed between  
the two MOSFETs according to duty factor.  
L x I  
TRAN  
- V  
OUT  
t
=
(EQ. 9)  
RISE  
V
IN  
The switching losses seen when sourcing current will be  
different from the switching losses seen when sinking current.  
When sourcing current, the upper MOSFET realizes most of  
the switching losses. The lower switch realizes most of the  
switching losses when the converter is sinking current (see  
equations on next page). These equations assume linear  
voltage-current transitions and do not adequately model power  
loss due the reverse-recovery of the upper and lower  
MOSFET’s body diode.  
L x I  
TRAN  
(EQ. 10)  
t
=
FALL  
V
OUT  
where: I  
is the transient load current step, t  
is the  
TRAN  
RISE  
is the  
response time to the application of load, and t  
FALL  
response time to the removal of load. The worst case  
response time can be either at the application or removal of  
load. Be sure to check both of these equations at the  
minimum and maximum output levels for the worst case  
response time.  
The gate-charge losses are dissipated by the ISL6406 and  
don't heat the MOSFETs. However, large gate-charge  
Input Capacitor Selection  
Use a mix of input bypass capacitors to control the voltage  
overshoot across the MOSFETs. Use small ceramic  
capacitors for high frequency decoupling and bulk capacitors  
to supply the current needed each time Q turns on. Place the  
small ceramic capacitors physically close to the MOSFETs  
increases the switching interval, t which increases the  
SW  
MOSFET switching losses. Ensure that both MOSFETs are  
within their maximum junction temperature at high ambient  
temperature by calculating the temperature rise according to  
package thermal-resistance specifications. A separate heatsink  
may be necessary depending upon MOSFET power, package  
type, ambient temperature and air flow.  
1
and between the drain of Q and the source of Q .  
1
2
The important parameters for the bulk input capacitor are the  
voltage rating and the RMS current rating. For reliable  
operation, select the bulk capacitor with voltage and current  
ratings above the maximum input voltage and largest RMS  
current required by the circuit. The capacitor voltage rating  
should be at least 1.25 times greater than the maximum  
input voltage and a voltage rating of 1.5 times is a  
conservative guideline. The RMS current rating requirement  
for the input capacitor of a buck regulator is approximately  
1/2 the DC load current.  
Losses while Sourcing current  
2
1
2
--  
× D + Io × V × t  
P
P
= Io × r  
× f  
UPPER  
DS(ON)  
IN SW s  
2
= Io x r  
x (1 - D)  
DS(ON)  
LOWER  
Losses while Sinking current  
2
P
= Io x r  
x D  
DS(ON)  
UPPER  
2
1
2
--  
× (1 D) + Io × V × t  
P
= Io × r  
× f  
s
LOWER  
DS(ON)  
IN SW  
Where: D is the duty cycle = V  
/ V ,  
OUT IN  
t
is the combined switch ON and OFF time, and  
SW  
f is the switching frequency.  
(EQ. 12)  
s
FN9073.7  
January 16, 2007  
13  
ISL6406  
Given the reduced available gate bias voltage (5V), logic-  
level or sub-logic-level transistors should be used for both  
N-MOSFETs. Caution should be exercised with devices  
The minimum bootstrap capacitance can be calculated by  
rearranging Equation 13 and solving for C  
.
BOOT  
Q
GATE  
(EQ. 14)  
----------------------------------------------------  
=
C
exhibiting very low V  
characteristics. The shoot-  
BOOT  
GS(ON)  
V
V  
BOOT1  
BOOT2  
through protection present aboard the ISL6406 may be  
circumvented by these MOSFETs if they have large parasitic  
impedances and/or capacitances that would inhibit the gate  
of the MOSFET from being discharged below its threshold  
level before the complementary MOSFET is turned on.  
Typical gate charge values for MOSFETs considered in  
these types of applications range from 20nC to 100nC.  
Since the voltage drop across Q  
is negligible,  
- V . A schottky diode is  
LOWER  
V
is simply V  
CPVOUT  
BOOT1  
D
recommended to minimize the voltage drop across the  
bootstrap capacitor during the on-time of the upper  
Bootstrap Component Selection  
External bootstrap components, a diode and capacitor, are  
required to provide sufficient gate enhancement to the upper  
MOSFET. The internal MOSFET gate driver is supplied by  
the external bootstrap circuitry as shown in Figure 9. The  
MOSFET. Initial calculations with V  
no less than 4V  
BOOT2  
will quickly help narrow the bootstrap capacitor range.  
For example, consider an upper MOSFET is chosen with a  
boot capacitor, C  
, develops a floating supply voltage  
BOOT  
maximum gate charge, Q , of 100nC. Limiting the voltage  
g
referenced to the PHASE pin. This supply is refreshed each  
cycle, when D conducts, to a voltage of CPVOUT less  
drop across the bootstrap capacitor to 1V results in a value  
of no less than 0.1μF. The tolerance of the ceramic capacitor  
should also be considered when selecting the final bootstrap  
capacitance value.  
BOOT  
the boot diode drop, V , plus the voltage rise across  
D
Q
.
LOWER  
A fast recovery diode is recommended when selecting a  
bootstrap diode to reduce the impact of reverse recovery  
CPVOUT  
D
BOOT  
+
V
-
V
IN  
charge loss. Otherwise, the recovery charge, Q , would  
RR  
D
ISL6406  
have to be added to the gate charge of the MOSFET and  
taken into consideration when calculating the minimum  
bootstrap capacitance.  
BOOT  
C
BOOT  
UGATE  
PHASE  
Q
Q
UPPER  
LOWER  
NOTE:  
= V  
V
-V  
D
G-S  
CC  
LGATE  
-
+
NOTE:  
G-S = V  
V
CC  
GND  
FIGURE 9. UPPER GATE DRIVE BOOTSTRAP  
Just after the PWM switching cycle begins and the charge  
transfer from the bootstrap capacitor to the gate capacitance  
is complete, the voltage on the bootstrap capacitor is at its  
lowest point during the switching cycle. The charge lost on  
the bootstrap capacitor will be equal to the charge  
transferred to the equivalent gate-source capacitance of the  
upper MOSFET as shown:  
(EQ. 13)  
Q
= C  
× (V  
V  
)
BOOT2  
GATE  
BOOT  
BOOT1  
where Q  
GATE  
is the maximum total gate charge of the upper  
is the bootstrap capacitance, V is  
MOSFET, C  
BOOT  
BOOT1  
the bootstrap voltage immediately before turn-on, and  
V
is the bootstrap voltage immediately after turn-on.  
BOOT2  
The bootstrap capacitor begins its refresh cycle when the gate  
drive begins to turn-off the upper MOSFET. A refresh cycle  
ends when the upper MOSFET is turned on again, which  
varies depending on the switching frequency and duty cycle.  
FN9073.7  
January 16, 2007  
14  
ISL6406  
ISL6406 DC/DC Converter Application Circuit  
The circuit below shows the device as it is configured on the  
ISL6406 evaluation board. Detailed information on the  
circuit, including a complete Bill-of-Materials and circuit  
board description, can be found in Application Note AN1031.  
3.3V  
P
1
C
3
C
1A-B  
C
2
GND  
U
13  
VCC  
1
P
2
TP  
1
4
3
5
6
7
OCSET  
CT1  
CT2  
RT  
R
C
R
1
4
TP  
3
6
CPVOUT  
BOOT  
D
1
7
C
5
12  
1
C
6
CPGND  
GND  
15  
ISL6406  
R
7
C
16  
R
UGATE  
PHASE  
8
L
1
2.5V @ 5A  
10  
8
14  
2
VOUT  
P
3
P
C
5
8A-C  
SYNC/EN  
LGATE  
Q
1
COMP  
11  
FB  
9
C
10  
R
3
GND  
GND  
C
R
P
P
11  
2
4
R
C
9
4
R
5
6
JP1  
NOTE: Remove R3, R4, C9, and R5 from the board.  
FN9073.7  
January 16, 2007  
15  
ISL6406  
Small Outline Plastic Packages (SOIC)  
M16.15 (JEDEC MS-012-AC ISSUE C)  
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE  
N
INDEX  
AREA  
0.25(0.010)  
M
B M  
H
INCHES MILLIMETERS  
E
SYMBOL  
MIN  
MAX  
0.0688  
0.0098  
0.020  
MIN  
1.35  
0.10  
0.33  
0.19  
9.80  
3.80  
MAX  
1.75  
NOTES  
-B-  
A
A1  
B
C
D
E
e
0.0532  
0.0040  
0.013  
-
1
2
3
0.25  
-
L
0.51  
9
SEATING PLANE  
A
0.0075  
0.3859  
0.1497  
0.0098  
0.3937  
0.1574  
0.25  
-
-A-  
10.00  
4.00  
3
h x 45°  
D
4
-C-  
0.050 BSC  
1.27 BSC  
-
α
H
h
0.2284  
0.0099  
0.016  
0.2440  
0.0196  
0.050  
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
-
e
A1  
C
5
B
0.10(0.004)  
L
6
0.25(0.010) M  
C
A M B S  
N
α
16  
16  
7
0°  
8°  
0°  
8°  
-
NOTES:  
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication Number 95.  
Rev. 1 6/05  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006  
inch) per side.  
4. Dimension “E” does not include interlead flash or protrusions. Interlead  
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above  
the seating plane, shall not exceed a maximum value of 0.61mm  
(0.024 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimensions are  
not necessarily exact.  
FN9073.7  
January 16, 2007  
16  
ISL6406  
Thin Shrink Small Outline Plastic Packages (TSSOP)  
M16.173  
N
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE  
INCHES MILLIMETERS  
MIN  
INDEX  
AREA  
0.25(0.010)  
M
B M  
E
E1  
-B-  
GAUGE  
PLANE  
SYMBOL  
MAX  
0.043  
0.006  
0.037  
0.012  
0.008  
0.201  
0.177  
MIN  
-
MAX  
1.10  
0.15  
0.95  
0.30  
0.20  
5.10  
4.50  
NOTES  
A
A1  
A2  
b
-
-
0.002  
0.033  
0.0075  
0.0035  
0.193  
0.169  
0.05  
0.85  
0.19  
0.09  
4.90  
4.30  
-
1
2
3
-
L
0.25  
0.010  
0.05(0.002)  
SEATING PLANE  
A
9
-A-  
c
-
D
D
3
-C-  
E1  
e
4
α
0.026 BSC  
0.65 BSC  
-
A2  
e
A1  
c
E
0.246  
0.020  
0.256  
0.028  
6.25  
0.50  
6.50  
0.70  
-
b
0.10(0.004)  
L
6
0.10(0.004) M  
C
A M B S  
N
16  
16  
7
o
o
o
o
0
8
0
8
-
α
NOTES:  
Rev. 1 2/02  
1. These package dimensions are within allowable dimensions of  
JEDEC MO-153-AB, Issue E.  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate  
burrs. Mold flash, protrusion and gate burrs shall not exceed  
0.15mm (0.006 inch) per side.  
4. Dimension “E1” does not include interlead flash or protrusions.  
Interlead flash and protrusions shall not exceed 0.15mm (0.006  
inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual  
index feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. Dimension “b” does not include dambar protrusion. Allowable  
dambar protrusion shall be 0.08mm (0.003 inch) total in excess  
of “b” dimension at maximum material condition. Minimum space  
between protrusion and adjacent lead is 0.07mm (0.0027 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimen-  
sions are not necessarily exact. (Angles in degrees)  
FN9073.7  
January 16, 2007  
17  
ISL6406  
Quad Flat No-Lead Plastic Package (QFN)  
Micro Lead Frame Plastic Package (MLFP)  
L16.5x5B  
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE  
(COMPLIANT TO JEDEC MO-220VHHB ISSUE C)  
MILLIMETERS  
SYMBOL  
MIN  
NOMINAL  
MAX  
1.00  
0.05  
1.00  
NOTES  
A
0.80  
0.90  
-
A1  
A2  
A3  
b
-
-
-
-
-
9
0.20 REF  
9
0.28  
2.95  
2.95  
0.33  
0.40  
3.25  
3.25  
5, 8  
D
5.00 BSC  
-
D1  
D2  
E
4.75 BSC  
9
3.10  
7, 8  
5.00 BSC  
-
E1  
E2  
e
4.75 BSC  
9
3.10  
7, 8  
0.80 BSC  
-
k
0.25  
0.35  
-
-
-
-
L
0.60  
0.75  
0.15  
8
L1  
N
-
16  
4
4
-
10  
2
Nd  
Ne  
P
3
3
-
-
0.60  
12  
9
θ
-
9
Rev. 1 10/02  
NOTES:  
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.  
2. N is the number of terminals.  
3. Nd and Ne refer to the number of terminals on each D and E.  
4. All dimensions are in millimeters. Angles are in degrees.  
5. Dimension b applies to the metallized terminal and is measured  
between 0.15mm and 0.30mm from the terminal tip.  
6. The configuration of the pin #1 identifier is optional, but must be  
located within the zone indicated. The pin #1 identifier may be  
either a mold or mark feature.  
7. Dimensions D2 and E2 are for the exposed pads which provide  
improved electrical and thermal performance.  
8. Nominal dimensionsare provided toassistwith PCBLandPattern  
Design efforts, see Intersil Technical Brief TB389.  
9. Features and dimensions A2, A3, D1, E1, P & θ are present when  
Anvil singulation method is used and not present for saw  
singulation.  
10. Depending on the method of lead termination at the edge of the  
package, a maximum 0.15mm pull back (L1) maybe present. L  
minus L1 to be equal to or greater than 0.3mm.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN9073.7  
January 16, 2007  
18  

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