KSA733GBU [ROCHESTER]

150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92;
KSA733GBU
型号: KSA733GBU
厂家: Rochester Electronics    Rochester Electronics
描述:

150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

文件: 总7页 (文件大小:762K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSA733  
Low Frequency Amplifier  
Collector-Base Voltage : V  
Complement to KSC945  
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
= -60V  
CBO  
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-50  
V
CEO  
EBO  
-5  
V
I
-150  
250  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
-60  
-50  
- 5  
Typ.  
Max.  
Units  
BV  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA. I =0  
C
B
I
= -10µA. I =0  
V
E
C
I
I
V
V
V
= --60V, I =0  
-100  
-100  
700  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
E
= -5V, I =0  
C
h
DC Current Gain  
= -6V, I = -1mA  
40  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -100mA, I = -10mA  
-0.18  
-0.62  
180  
2.8  
-0.3  
V
V
CE  
C
B
V
= -6V, I = -1mA  
-0.50  
50  
-0.80  
BE  
CE  
CE  
CB  
CE  
C
f
V
V
V
= -6V, I = -10mA  
MHz  
pF  
T
C
C
= -10V, I = 0, f=1MHz  
E
ob  
NF  
Noise Figure  
= -6V, I = -0.3mA  
6.0  
20  
dB  
C
f=1MHz, Rs=10kΩ  
h
Classification  
FE  
Classification  
R
O
Y
G
L
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
200 ~ 400  
350 ~ 700  
FE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
1000  
100  
10  
-50  
VCE = -6V  
-45  
IB = -400µA  
-40  
IB = -350µA  
-35  
IB = -300µA  
-30  
-25  
-20  
-15  
-10  
-5  
IB = -250µA  
IB = -200µA  
IB = -150µA  
IB = -100µA  
IB = -50µA  
1
-0.1  
0
-1  
-10  
-100  
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
-10  
-100  
-10  
-1  
IC = 10 IB  
VCE = -6V  
-1  
VBE(sat)  
-0.1  
VCE(sat)  
-0.01  
-0.1  
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-1  
-10  
-100  
-1000  
IC[mA], COLLECTOR CURRENT  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
1000  
VCE = -6V  
I
= 0  
fE= 1MHz  
10  
100  
10  
1
-1  
-10  
-1  
-10  
-100  
IC[mA], COLLECTOR CURRENT  
VCB [V], COLLECTOR-BASE VOLTAGE  
Figure 5. Collector Output Capacitance  
Figure 6. Current Gain Bandwidth Product  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
Product Folder - Fairchild P/N KSA733 - PNP Epitaxial Silicon Transistor  
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This pagePrint version  
Collector-Base Voltage : V  
= -60V  
CBO  
Dotted line  
Design tools  
Complement to KSC945  
Suffix “-C” means Center Collector (1.  
Emitter 2. Collector 3. Base)  
technical information  
buy products  
back to top  
Product status/pricing/packaging  
technical support  
my Fairchild  
Product  
KSA733CYIUBU  
KSA733LBU  
Product status  
Pricing* Package type Leads  
Packing method  
BULK  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
$0.0425  
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
company  
BULK  
KSA733YBU  
BULK  
KSA733CGBU  
KSA733CGIUTA  
KSA733CLBU  
KSA733YIUTA  
KSA733YTA  
BULK  
TAPE REEL  
BULK  
TAPE REEL  
TAPE REEL  
TAPE REEL  
BULK  
KSA733CYIUTA  
KSA733CYBU  
KSA733GGSTA  
KSA733CGIUBU  
KSA733CYTA  
KSA733GTA  
TAPE REEL  
BULK  
TAPE REEL  
TAPE REEL  
TAPE REEL  
KSA733CGTA  
Product Folder - Fairchild P/N KSA733 - PNP Epitaxial Silicon Transistor  
TO-92  
TO-92  
TO-92  
KSA733CLTA  
KSA733GBU  
KSA733OBU  
Full Production  
$0.0425  
$0.0425  
$0.0425  
3
3
3
TAPE REEL  
BULK  
Full Production  
Full Production  
BULK  
* 1,000 piece Budgetary Pricing  
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Application notes  
AN-9013: AN-9013 Reducing Switching Losses with QFET in a Step-up  
Convert (88 K) Jul 19, 2002  
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