KSH127TF [ROCHESTER]
8A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3;型号: | KSH127TF |
厂家: | Rochester Electronics |
描述: | 8A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 |
文件: | 总8页 (文件大小:789K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSH127
D-PAK for Surface Mount Applications
•
•
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP127
Complement to KSH122
D-PAK
I-PAK
1
1
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Equivalent Circuit
Absolute Maximum Ratings T =25°C unless otherwise noted
C
C
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Value
- 100
- 100
- 5
Units
V
V
V
V
V
CBO
CEO
EBO
B
V
I
I
I
- 8
A
C
- 16
A
CP
B
- 120
20
mA
W
W
°C
°C
R1
R2
P
Collector Dissipation (T =25°C)
C
C
E
R1 8 kΩ
R2 0.12 k Ω
Collector Dissipation (T =25°C)
1.75
a
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Max.
Units
V
(sus)
I
= - 30mA, I = 0
- 100
V
CEO
CEO
CBO
EBO
C
B
I
I
I
V
V
V
= - 50V, I = 0
- 10
- 10
- 2
µA
µA
mA
CE
CB
EB
B
= - 100V, I = 0
E
= - 5V, I = 0
C
h
*DC Current Gain
V
V
= - 4V, I = - 4A
1000
100
12K
FE
CE
CE
C
= - 4V, V = -8A
EB
V
(sat)
*Collector-Emitter Saturation Voltage
I
I
= - 4A, I = - 16mA
- 2
- 4
V
V
CE
C
C
B
= - 8A, I = - 80mA
B
V
V
C
(sat)
(on)
*Base-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Output Capacitance
I
= - 8A, I = - 80mA
- 4.5
- 2.8
300
V
V
BE
BE
ob
C
B
V
V
= -4V, I = - 4A
C
CE
= - 10V, I = 0
pF
CB
E
f= 0.1MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
Typical Characteristics
10k
-10
VCE = -4V
IC = 250 IB
VBE(sat)
VCE(sat)
-1
1k
-0.1
100
-0.1
-0.01
-0.1
-1
-10
-1
-10
-100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
10
VCC= -30V
IC= 250IB
IB1= IB2
1
tR
tD, VBE(off)=0
0.1
1
-0.1
0.01
-0.1
-1
-10
-100
-1
-10
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
-100
-10
10
VCC= -30V
IC=250IB
IB1=IB2
tSTG
-1
1
tF
-0.1
-0.01
0.1
-0.1
-1
-10
-100
-1000
-1
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
Typical Characteristic (Continued)
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
Package Demensions
D-PAK
6.60 ±0.20
5.34 ±0.30
2.30 ±0.10
0.50 ±0.10
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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Features
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[E-
Distributor and field sales
representatives
●
●
●
High DC Current Gain
Quality and reliability
Built-in a Damper Diode at E-C
Lead Formed for surface Mount
Applications (No Suffix)
This pagePrint version
Design tools
●
●
●
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular TIP127
Complementary to KSH122
technical information
buy products
back to top
Applications
technical support
my Fairchild
D-PAK for Surface Mount
company
back to top
Product status/pricing/packaging
Product
KSH127TM
KSH127TF
Product status
Full Production
Full Production
Pricing*
Package type
Leads
Packing method
TAPE REEL
$0.353 TO-252(DPAK)
$0.353 TO-252(DPAK)
2
2
TAPE REEL
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
KSH127I
Related Links
Products groups
Product information
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
Datasheet
Download this
datasheet
Contents
Features | Applications | Product
status/pricing/packaging
How to order products
Product Change Notices
(PCNs)
PDF
Support
Features
e-mail this datasheet
[E-
Distributor and field sales
representatives
●
●
●
High DC Current Gain
Quality and reliability
Built-in a Damper Diode at E-C
Lead Formed for surface Mount
Applications (No Suffix)
This pagePrint version
Design tools
●
●
●
Straight Lead (I-PAK, "-I" Suffix)
Electrically Similar to Popular TIP127
Complementary to KSH122
technical information
buy products
back to top
Applications
technical support
my Fairchild
D-PAK for Surface Mount
company
back to top
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
KSH127ITU
Full Production
$0.353 TO-251(IPAK)
3
RAIL
* 1,000 piece Budgetary Pricing
back to top
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Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
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