MHW8227AN [ROCHESTER]
47MHz - 870MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, CASE 1302-01, 7 PIN;
| 型号： | MHW8227AN |
| 厂家： | 
Rochester Electronics |
| 描述： | 47MHz - 870MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, CASE 1302-01, 7 PIN 高功率电源 放大器 射频 微波 功率放大器 |
| 文件： | 总5页 (文件大小：753K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MHW8227AN
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
Gallium Arsenide
CATV Amplifier Module
MHW8227AN
Features
• Specified for 79- and 112-Channel Loading
• Excellent Distortion Performance
• Higher Output Capability
• Built-in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
• Output Port Ring Wave Protection
Applications
870 MHz
22.1 dB GAIN
112-CHANNEL
GaAs CATV AMPLIFIER MODULE
• CATV Systems Operating in the 47 to 870 MHz Frequency Range
• Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler
Amplifier Module
• Replaced MHW8227A. There are no form, fit or function changes with this
CASE 1302-01, STYLE 1
part replacement.
• RoHS Compliant
Table 1. Maximum Ratings
Rating
Symbol
Value
+70
Unit
dBmV
Vdc
°C
RF Voltage Input (Single Tone)
DC Supply Voltage
V
in
V
+26
CC
Operating Case Temperature Range
Storage Temperature Range
T
-20 to +100
-40 to +100
C
T
stg
°C
Table 2. ESD Maximum Ratings
Rating
Input Value
Output Value
Unit
Surge Voltage per IEC 1000-4-5
200
2
200
2
V
Human Body Model per Mil. Std. 1686
kV
Table 3. Electrical Characteristics (V = 24 Vdc, T = +45°C, 75 Ω system unless otherwise noted)
CC
C
Characteristic
Symbol
Min
47
Typ
—
Max
Unit
MHz
dB
Frequency Range
Power Gain
Slope
BW
870
22.7
1.2
870 MHz
G
21.5
0
22.1
0.5
—
p
47-870 MHz
S
dB
Gain Flatness (47-870 MHz, Peak-to-Valley)
—
—
0.7
dB
Return Loss — Input
IRL
dB
(Z = 75 Ohms)
o
47-300 MHz
301-700 MHz
701-870 MHz
20
18
16
—
—
—
—
—
—
Return Loss — Output
ORL
dB
(Z = 75 Ohms)
o
47-160 MHz
161-700 MHz
701-870 MHz
20
18
16
—
—
—
—
—
—
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. Electrical Characteristics (V = 24 Vdc, T = +45°C, 75 Ω system unless otherwise noted) (continued)
CC
C
Characteristic
Symbol
Min
Typ
Max
Unit
Composite Second Order
(V = +48 dBmV/ch., Worst Case)
dBc
112-Channel FLAT
79-Channel FLAT
112-Channel, 12 dB Tilt
79-Channel, 12 dB Tilt
CSO
CSO
CSO
CSO
—
—
—
—
-66
-70
-65
-69
-64
-68
-63
-67
out
112
79
(V = +48 dBmV/ch., Worst Case)
out
(V = +56 dBmV @ 870 MHz Equiv)
out
112
79
(V = +58 dBmV @ 870 MHz Equiv)
out
Cross Modulation Distortion @ Ch 2
dBc
dBc
(V = +48 dBmV/ch., FM = 55.25 MHz)
112-Channel FLAT
79-Channel FLAT
112-Channel, 12 dB Tilt
79-Channel, 12 dB Tilt
XMD
XMD
XMD
XMD
—
—
—
—
-58
-61
-53
-60
-56
-59
-51
-47
out
112
79
(V = +48 dBmV/ch., FM = 55.25 MHz)
out
(V = +56 dBmV @ 870 MHz Equiv)
out
112
79
(V = +58 dBmV @ 870 MHz Equiv)
out
Composite Triple Beat
(V = +48 dBmV/ch., Worst Case)
112-Channel FLAT
79-Channel FLAT
112-Channel, 12 dB Tilt
79-Channel, 12 dB Tilt
CTB
CTB
CTB
CTB
—
—
—
—
-60
–66
-57
-63
-58
-64
-55
-61
out
112
79
(V = +48 dBmV/ch., Worst Case)
out
(V = +56 dBmV @ 870 MHz Equiv)
out
112
79
(V = +58 dBmV @ 870 MHz Equiv)
out
Noise Figure
50 MHz
NF
—
—
—
—
4.5
4.5
4.5
4.5
—
—
—
—
dB
550 MHz
750 MHz
870 MHz
DC Current (V = 24 V, T = 45°C)
I
DC
410
425
440
mA
DC
C
MHW8227AN
RF Device Data
Freescale Semiconductor
2
PACKAGE DIMENSIONS
A
S
B
A
Z
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2X
Q
M
M
M
A
0.010
T F
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
V
J
A
B
C
D
E
F
−−− 1.775
−−− 1.085
−−− 0.840
−−− 45.085
−−− 27.559
−−− 21.336
F
F
R
0.015
0.021
0.510 11.811 12.954
0.325 7.62 8.255
2.540 BSC
3.962 BSC
8.001 9.017
0.381
0.533
0.465
0.300
G
J
0.100 BSC
0.156 BSC
0.315 0.355
K
L
1.000 BSC
0.165 BSC
0.100 BSC
25.400 BSC
4.191 BSC
2.540 BSC
2X 6−32UNC−2B
N
P
Q
R
S
U
V
W
X
Y
Z
L
M
M
0.010
Z T A
2X U
0.148
0.168
3.759
4.267
−−− 0.600
1.500 BSC
−−− 15.24
38.100 BSC
5.080 BSC
E
0.200 BSC
−−− 0.250
−−− 6.350
1
2
3
5
7 8 9
0.435
−−− 11.049
10.160 BSC
−−−
C
0.400 BSC
N
K
E
0.152
0.009
0.163
0.011
3.861
0.229
4.140
0.279
W
Z
X
X
4X
STYLE 1:
PIN 1. RF INPUT
P
7X
D
G
T
2. GROUND
3. GROUND
4. DELETED
5. VDC
6. DELETED
7. GROUND
8. GROUND
9. RF OUTPUT
M
M
0.020
T A
X
2X
Y
M
M
0.010
Z T A
CASE 1302-01
ISSUE E
MHW8227AN
RF Device Data
Freescale Semiconductor
3
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Document Number: MHW8227AN
Rev. 3, 5/2006
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