MIC5018BM4 [ROCHESTER]
BUF OR INV BASED MOSFET DRIVER, PDSO4, SOT-143, 4 PIN;
| 型号： | MIC5018BM4 |
| 厂家： | 
Rochester Electronics |
| 描述： | BUF OR INV BASED MOSFET DRIVER, PDSO4, SOT-143, 4 PIN 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总9页 (文件大小：891K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC5018
IttyBitty™ High-Side MOSFET Driver
General Description
Features
The MIC5018 IttyBitty™ high-side MOSFET driver is
designed to switch an N-channel enhancement-type
MOSFET from a TTL compatible control signal in high- or
low-side switch applications. This driver features the tiny
4-lead SOT-143 package.
• +2.7V to +9V operation
• 150µA typical supply current at 5V supply
• ≤1µA typical standby (off) current
• Charge pump for high-side low-voltage applications
• Internal zener diode gate-to-ground MOSFET protection
• Operates in low- and high-side configurations
• TTL compatible input
The MIC5018 is powered from a +2.7V to +9V supply
and features extremely low off-state supply current.
An internal charge pump drives the gate output higher
than the driver supply voltage and can sustain the gate
voltage indefinitely. An internal zener diode limits the
gate-to-source voltage to a safe level for standard
N-channel MOSFETs.
• ESD protected
Applications
In high-side configurations, the source voltage of the
MOSFET approaches the supply voltage when switched
on. To keep the MOSFET turned on, the MIC5018’s output
drives the MOSFET gate voltage higher than the supply
voltage. In a typical high-side configuration, the driver is
powered from the load supply voltage. Under some
conditions, the MIC5018 and MOSFET can switch a load
voltage that is slightly higher than the driver supply
voltage.
• Battery conservation
• Power bus switching
• Solenoid and motion control
• Lamp control
In a low-side configuration, the driver can control a
MOSFET that switches any voltage up to the rating of the
MOSFET. The gate output voltage is higher than the
typical 3.3V or 5V logic supply and can fully enhance a
standard MOSFET.
The MIC5018 is available in the SOT-143 package and is
rated for –40°C to +85°C ambient temperature range.
Typical Applications
+5V
‡
VLOAD SUPPLY
‡ Load voltage limited only by
MOSFET drain-to-source rating
* Siliconix
30m , 7A max., 30VVDS max.
8-lead SOIC package
MIC5018
IRFZ24*
N-Channel
MOSFET
4.7µF
2
4
3
VS
G
+2.7 to +9V
1
CTL GND
On
Off
MIC5018
4.7µF
Si9410DY*
N-channel
MOSFET
2
4
3
VS
G
* International Rectifier
100m , 17A max.
TO-220 package
1
CTL GND
On
Off
Low-Voltage High-Side Power Switch
Low-Side Power Switch
IttyBitty is a trademark of Micrel, Inc.
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
M9999-042406
(408) 955-1690
April 2006
Micrel, Inc.
MIC5018
Ordering Information
Part Number
Making
Temp. Range
–40 C to +85ºC
Package
Standard
Pb-Free
Standard
H10
Pb-Free
MIC5018BM4
MIC5018YM4
H10
º
SOT-143
Pin Configuration
VS
2
GND
1
Part
Identification
H10
H10
Early production identification:
MH10
3
4
G
CTL
SOT-143 (M4)
Pin Description
Pin Number
Pin Name Pin Function
1
2
3
GND
VS
G
Ground: Power return.
Supply (Input): +2.7V to +9V supply.
Gate (Output): Gate connection to external MOSFET.
Control (Input): TTL compatible on/off control input. Logic high drives the gate output above the supply
voltage. Logic low forces the gate output near ground.
4
CTL
M9999-042406
(408) 955-1690
April 2006
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Micrel, Inc.
MIC5018
Absolute Maximum Ratings
Operating Ratings
Lead Temperature, soldering 10 sec ..........................300ºC
Package Thermal Resistance
Supply Input Voltage (VSUPPLY).....................................+10V
Control Voltage (VCTL) ................................... –0.6V to +16V
Gate Voltage (VG).........................................................+16V
Ambient Temperature Range (TA)...............–40°C to +85°C
SOT-143 (θJA) ....................................................220°C/W
SOT-143 (θJC) ....................................................130°C/W
Electrical Characteristics
Parameter
Conditions(1)
Min Typ
Max
Units
Supply Current
VSUPPLY = 3.3V
VCTL = 0V
VCTL = 3.3V
0.01
70
1
140
µA
µA
VSUPPLY = 5V
VCTL = 0V
VCTL = 5V
0
150
1
300
µA
µA
Control Input Voltage
2.7V ≤ VSUPPLY ≤ 9V
2.7V ≤ VSUPPLY ≤ 5V
5V ≤ VSUPPLY ≤ 9V
VCTL for logic 0 input
VCTL for logic 1 input
VCTL for logic 1 input
0
0.8
VSUPPLY
VSUPPLY
1
V
V
2.0
2.4
0.01
5
V
Control Input Current
2.7V ≤ VSUPPLY ≤ 9V
(2)
µA
pF
V
Control Input Capacitance
Zener Diode Output Clamp
Gate Output Voltage
V
SUPPLY = 9V
13
6.3
16
7.1
8.2
13.4
9.5
19
VSUPPLY = 2.7V
VSUPPLY = 3.0V
V
7.1
V
V
SUPPLY = 4.5V
11.4
V
Gate Output Current
Gate Turn-On Time
VSUPPLY = 5V
VOUT = 10V(3)
µA
V
V
SUPPLY = 4.5V
SUPPLY = 4.5V
CL = 1000pF(4)
0.75
2.1
1.5
4.2
Ms
ms
CL = 3000pF(4)
Gate Turn-Off Time
CL = 1000pF(5)
CL = 3000pF(5)
10
30
20
60
µs
µs
Notes:
General Note: Devices are ESD protected, however handling precautions are recommended.
1. Typical values at TA = 25°C. Minimum and maximum values indicate performance at –40°C ≥ TA ≥ +85°C. Parts production tested at 25°C.
2. Guaranteed by design.
3. Resistive load selected for VOUT = 10V.
4. Turn-on time is the time required for gate voltage to rise to 4V greater than the supply voltage. This represents a typical MOSFET gate threshold
voltage.
5. Turn-off time is the time required for the gate voltage to fall to 4V above the supply voltage. This represents a typical MOSFET gate threshold
voltage.
Test Circuit
VSUPPLY
0.1µF
MIC5018
VS
CTL GND
2
4
3
G
VOUT
1
CL
5V
0V
M9999-042406
(408) 955-1690
April 2006
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Micrel, Inc.
MIC5018
Typical Characteristics(4)
Supply Current
vs. Supply Voltage
1.0
0.8
-40°C
0.6
25°C
0.4
0.2
125°C
0
0
2
4
6
8
10
SUPPLY VOLTAGE (V)
Gate Output Voltage
vs. Supply Voltage
20
15
10
5
125°C
25°C
-40°C
0
0
2
4
6
8
10
SUPPLY VOLTAGE (V)
Note 4: TA = 25°C, VSUPPLY = 5V unless noted.
Note 5: Full turn-on time is the time between VCTL rising to 2.5V and the VG rising to 90% of its steady on-state value.
Note 6: Full turn-off time is the time between VCTL falling to 0.5V and the VG falling to 10% of its steady on-state value.
M9999-042406
(408) 955-1690
April 2006
4
Micrel, Inc.
MIC5018
Functional Diagram
+2.7V to +9V
VS
MIC5018
I1
20µA
D2
35V
Q1
R1 2k
CTL
On
Off
G
Q2
EN
CHARGE
PUMP
D1
16V
D3 16V
Q3
R2
15k
GND
Functional Diagram with External Components
(High-Side Driver Configuration)
approximately:
Functional Description
Refer to the functional diagram.
VG = 4 × VSUPPLY – 2.8V, but not exceeding 16V
The oscillator operates from approximately 70kHz to
approximately 100kHz depending upon the supply
voltage and temperature.
The MIC5018 is a noninverting device. Applying a logic
high signal to CTL (control input) produces gate drive
output. The G (gate) output is used to turn on an
external N-channel MOSFET.
Gate Output
The charge pump output is connected directly to the G
(gate) output. The charge pump is active only when CTL
is high. When CTL is low, Q3 is turned on by the second
inverter and discharges the gate of the external
MOSFET to force it off.
Supply
VS (supply) is rated for +2.7V to +9V. An external
capacitor is recommended to decouple noise.
Control
If CTL is high, and the voltage applied to VS drops to
zero, the gate output will be floating (unpredictable).
CTL (control) is a TTL compatible input. CTL must be
forced high or low by an external signal. A floating input
may cause unpredictable operation.
ESD Protection
A high input turns on Q2, which sinks the output of
current source I1, making the input of the first inverter
low. The inverter output becomes high enabling the
charge pump.
D1 and D2 clamp positive and negative ESD voltages.
R1 isolates the gate of Q2 from sudden changes on the
CTL input. Q1 turns on if the emitter (CTL input) is
forced below ground to provide additional input
protection. Zener D3 also clamps ESD voltages for the
gate (G) output.
Charge Pump
The charge pump is enabled when CTL is logic high.
The charge pump consists of an oscillator and voltage
quadrupler (4×). Output voltage is limited to 16V by a
zener diode. The charge pump output voltage will be
M9999-042406
(408) 955-1690
April 2006
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Micrel, Inc.
MIC5018
Standard MOSFET
Application Information
Standard MOSFETs are fully enhanced with a gate-to-
source voltage of about 10V. Their absolute maximum
gate-to-source voltage is ±20V.
Supply Bypass
A capacitor from VS to GND is recommended to control
switching and supply transients. Load current and supply
lead length are some of the factors that affect capacitor
size requirements.
With a 5V supply, the MIC5018 produces a gate output
of approximately 15V. Figure 2 shows how the remaining
voltages conform. The actual drain-to-source voltage
drop across an IRFZ24 is less than 0.1V with a 1A load
and 10V enhancement. Higher current increases the
drain-to-source voltage drop, increasing the gate-to-
source voltage.
A 4.7µF or 10µF aluminum electrolytic or tantalum
capacitor is suitable for many applications.
The low ESR (equivalent series resistance) of tantalum
capacitors makes them especially effective, but also
makes them susceptible to uncontrolled inrush current
from low impedance voltage sources (such as NiCd
batteries or automatic test equipment). Avoid
instantaneously applying voltage, capable of high peak
current, directly to or near tantalum capacitors without
additional current limiting. Normal power supply turn-on
(slow rise time) or printed circuit trace resistance is
usually adequate for normal product usage.
+5V
MIC5018
4.7µF
2
4
3
15V
IRFZ24*approx. 0V
VS
G
1
10V
CTL GND
Logic
High
To demonstrate
this circuit, trya
Voltages are approximate
2
, 20W
5V
load resistor.
* International Rectifier
standard MOSFET
MOSFET Selection
The MIC5018 is designed to drive N-channel
enhancement type MOSFETs. The gate output (G) of
the MIC5018 provides a voltage, referenced to ground,
that is greater than the supply voltage. Refer to the
“Typical Characteristics: Gate Output Voltage vs. Supply
Voltage” graph.
Figure 2. Using a Standard MOSFET
The MIC5018 has an internal zener diode that limits the
gate-to-ground voltage to approximately 16V.
Lower supply voltages, such as 3.3V, produce lower
gate output voltages which will not fully enhance
standard MOSFETs. This significantly reduces the
maximum current that can be switched. Always refer to
the MOSFET data sheet to predict the MOSFET’s
performance in specific applications.
The supply voltage and the MOSFET drain-to-source
voltage drop determine the gate-to-source voltage.
VGS = VG – (VSUPPLY – VDS)
where:
V
GS = gate-to-source voltage (enhancement)
VG = gate voltage (from graph)
VSUPPLY = supply voltage
Logic-Level MOSFET
Logic-level N-channel MOSFETs are fully enhanced with
a gate-to-source voltage of approximately 5V and
generally have an absolute maximum gate-to-source
voltage of ±10V.
VDS = drain-to-source voltage
(approx. 0V at low current, or when fully enhanced)
VSUPPLY
+3.3V
MIC5018
D
MIC5018
3 VG
2
4
G
4.7µF
2
4
3
VS
G
VDS
9V
IRLZ44* approx. 0V
VS
G
S
1
VGS
1
CTL GND
5.7V
CTL GND
Logic
High
To demonstrate
this circuit, try
VLOAD
Voltages are approximate
5
, 5W or
3.3V
47 , 1/4W
load resistors.
* International Rectifier
logic-level MOSFET
Figure 1. Voltages
Figure 3. Using a Logic-Level MOSFET
The performance of the MOSFET is determined by the
gate-to-source voltage. Choose the type of MOSFET
according to the calculated gate-to-source voltage.
Refer to Figure 3 for an example showing nominal
voltages. The maximum gate-to-source voltage rating of
a logic-level MOSFET can be exceeded if a higher
M9999-042406
(408) 955-1690
April 2006
6
Micrel, Inc.
MIC5018
supply voltage is used. An external zener diode can
clamp the gate-to-source voltage as shown in Figure 4.
The zener voltage, plus its tolerance, must not exceed
the absolute maximum gate voltage of the MOSFET.
VSUPPLY
Split Power Supply
Refer to Figure 6. The MIC5018 can be used to control a
12V load by separating the driver supply from the load
supply.
+5V
+12V
MIC5018
4.7µF
2
3
15V
MIC5018
IRLZ44* approx. 0V
VS
G
Logic-leve
N-channel
MOSFET
2
4
3
4
1
VS
G
3V
CTL GND
Logic
High
1
CTL GND
To demonstrate
this circuit, trya
40 , 5W or
100 , 2W
load resistor.
Voltages are approximate
12V
* International Rectifier
logic-level MOSFET
5V <VZ < 10V
Protects gate of
logic-level MOSFET
Figure 6. 12V High-Side Switch
Figure 4. Gate-to-Source Protection
A logic-level MOSFET is required. The MOSFET’s
maximum current is limited slightly because the gate is
not fully enhanced. To predict the MOSFETs
performance for any pair of supply voltages, calculate
the gate-to-source voltage and refer to the MOSFET
data sheet.
A gate-to-source zener may also be required when the
maximum gate-to-source voltage could be exceeded due
to normal part-to-part variation in gate output voltage.
Other conditions can momentarily increase the gate-to-
source voltage, such as turning on a capacitive load or
shorting a load.
VGS = VG – (VLOAD SUPPLY – VDS)
VG is determined from the driver supply voltage using the
“Typical Characteristics: Gate Output Voltage vs. Supply
Voltage” graph.
Inductive Loads
Inductive loads include relays, and solenoids. Long
leads may also have enough inductance to cause
adverse effects in some circuits.
Low-Side Switch Configuration
The low-side configuration makes it possible to switch a
+2.7V to +9V
voltage much higher than the MIC5018’s maximum
supply voltage.
MIC5018
+80V
4.7µF
2
4
3
* International Rectifier
standard MOSFET
VS
G
To demonstrate
BVDSS = 100V
1
this circuit, try
1k, 10W or
33k, 1/4W
CTL GND
On
Off
+2.7 to +9V
load resistors.
Schottky
Diode
MIC5018
4.7µF
IRF540*
N-channel
MOSFET
2
4
3
VS
G
1
CTL GND
On
Off
Figure 5. Switching an Inductive Load
Figure 7. Low-Side Switch Configuration
Switching off an inductive load in a high-side application
momentarily forces the MOSFET source negative (as
the inductor opposes changes to current). This voltage
spike can be very large and can exceed a MOSFET’s
gate-to-source and drain-to-source ratings. A Schottky
diode across the inductive load provides a discharge
current path to minimize the voltage spike. The peak
current rating of the diode should be greater than the
load current.
The maximum switched voltage is limited only by the
MOSFET’s maximum drain-to-source ratings.
In a low-side application, switching off an inductive load
will momentarily force the MOSFET drain higher than the
supply voltage. The same precaution applies.
M9999-042406
(408) 955-1690
April 2006
7
Micrel, Inc.
MIC5018
Package Information
SOT-143 (M4)
MICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB http:/www.micrel.com
The information furnished by Micrel in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its
use. Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product
can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant
into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A
Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully
indemnify Micrel for any damages resulting from such use or sale.
© 1997 Micrel, Incorporated.
M9999-042406
(408) 955-1690
April 2006
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