MPS2222ARL [ROCHESTER]
600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN;型号: | MPS2222ARL |
厂家: | Rochester Electronics |
描述: | 600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN |
文件: | 总8页 (文件大小:767K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MPS2222, MPS2222A
MPS2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
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Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
BASE
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MPS2222
MPS2222A
30
40
1
EMITTER
Collector−Base Voltage
Emitter−Base Voltage
Vdc
Vdc
MPS2222
MPS2222A
60
75
MPS2222
MPS2222A
5.0
6.0
TO−92
CASE 29−11
STYLE 1
Collector Current − Continuous
Total Device Dissipation
I
600
mAdc
C
1
2
3
P
D
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAMS
Total Device Dissipation
P
D
@ T = 25°C
1.5
12
W
mW/°C
C
Derate above 25°C
MPS2222
MPS2222A
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
MPS
2222
AYWW G
G
MPS2
222A
AYWW G
G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
JC
R
q
83.3
MPS2222AC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
222
2AC
AYWW G
G
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 2
MPS2222/D
MPS2222, MPS2222A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
MPS2222
MPS2222A
V
30
40
−
−
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
MPS2222
MPS2222A
V
V
60
75
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
MPS2222
MPS2222A
5.0
6.0
−
−
E
C
Collector Cutoff Current (V = 60 Vdc, V
= 3.0 Vdc)
MPS2222A
I
−
10
nAdc
CE
EB(off)
CEX
Collector Cutoff Current
I
mAdc
CBO
(V = 50 Vdc, I = 0)
MPS2222
MPS2222A
MPS2222
−
−
−
−
0.01
0.01
10
CB
E
(V = 60 Vdc, I = 0)
CB
E
(V = 50 Vdc, I = 0, T = 125°C)
CB
E
A
A
(V = 50 Vdc, I = 0, T = 125°C)
MPS2222A
10
CB
E
Emitter Cutoff Current (V = 3.0 Vdc, I = 0)
MPS2222A
MPS2222A
I
EBO
−
−
100
20
nAdc
nAdc
EB
C
Base Cutoff Current (V = 60 Vdc, V
= 3.0 Vdc)
I
BL
CE
EB(off)
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 10 Vdc)
35
50
75
35
100
50
30
40
−
−
−
−
300
−
C
CE
CE
CE
CE
CE
CE
CE
(I = 1.0 mAdc, V = 10 Vdc)
C
(I = 10 mAdc, V = 10 Vdc)
C
(I = 10 mAdc, V = 10 Vdc, T = −55°C)
MPS2222A only
C
A
(I = 150 mAdc, V = 10 Vdc) (Note 1)
C
(I = 150 mAdc, V = 1.0 Vdc) (Note 1)
C
(I = 500 mAdc, V = 10 Vdc) (Note 1)
C
MPS2222
MPS2222A
−
−
Collector−Emitter Saturation Voltage (Note 1)
(I = 150 mAdc, I = 15 mAdc)
V
Vdc
Vdc
CE(sat)
BE(sat)
MPS2222
MPS2222A
MPS2222
−
−
−
−
0.4
0.3
1.6
1.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
MPS2222A
Base−Emitter Saturation Voltage (Note 1)
(I = 150 mAdc, I = 15 mAdc)
V
MPS2222
MPS2222A
MPS2222
−
0.6
−
1.3
1.2
2.6
2.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
MPS2222A
−
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
f
MHz
T
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz)
MPS2222
MPS2222A
250
300
−
−
C
CE
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)
C
obo
−
8.0
pF
pF
CB
E
Input Capacitance
C
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
MPS2222
MPS2222A
−
−
30
25
EB
C
Input Impedance
h
kW
ie
re
fe
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
MPS2222A
MPS2222A
2.0
0.25
8.0
1.25
C
CE
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
−4
Voltage Feedback Ratio
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
h
X 10
−
MPS2222A
MPS2222A
−
−
8.0
4.0
C
CE
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
Small−Signal Current Gain
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
MPS2222A
MPS2222A
50
75
300
375
C
CE
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
Output Admittance
h
oe
mmhos
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
MPS2222A
MPS2222A
5.0
25
35
200
C
CE
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
Collector Base Time Constant
rb′C
−
150
ps
c
(I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz)
MPS2222A
MPS2222A
E
CB
Noise Figure
NF
−
4.0
dB
(I = 100 mAdc, V = 10 Vdc, R = 1.0 kW, f = 1.0 kHz)
C
CE
S
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
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2
C * < 10 pF
S
−
2 V
MPS2222, MPS2222A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time
t
t
−
−
−
−
10
25
ns
ns
ns
ns
d
(V = 30 Vdc, V
= −0.5 Vdc,
BE(off)
CC
I
= 150 mAdc, I = 15 mAdc) (Figure 1)
B1
Rise Time
Storage Time
Fall Time
t
C
r
225
60
(V = 30 Vdc, I = 150 mAdc,
s
CC
C
I
= I = 15 mAdc) (Figure 2)
B2
B1
t
f
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
+ꢀ30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200
+16 V
+16 V
0
0
1 k
< 20 ns
1N914
−14 V
1 kW
C * < 10 pF
S
< 2 ns
−ꢀ4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
T = 125°C
J
300
200
25°C
100
70
−55°C
50
30
20
V
V
= 1.0 V
= 10 V
CE
CE
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
500 700 1.0 k
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
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3
MPS2222, MPS2222A
1.0
0.8
T = 25°C
J
I
C
= 1.0 mA
0.6
0.4
0.2
0
10 mA
150 mA
500 mA
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
200
500
V
I /I = 10
= 30 V
I /I = 10
C B
CC
300
T = 25°C
J
C B
100
t′ = t − 1/8 t
f
s
s
200
I = I
B1 B2
70
50
t @ V = 30 V
CC
r
t @ V
T = 25°C
J
= 2.0 V
= 0
d
t @ V
EB(off)
EB(off)
100
70
d
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
10
10
R
R
R
= OPTIMUM
= SOURCE
= RESISTANCE
S
S
S
f = 1.0 kHz
= 50 mA
I
= 1.0 mA, R = 150 W
S
C
8.0
8.0
500 mA, R = 200 W
S
I
C
100 mA, R = 2.0 kW
S
100 mA
500 mA
1.0 mA
50 mA, R = 4.0 kW
S
6.0
4.0
2.0
0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
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4
MPS2222, MPS2222A
30
20
500
V
= 20 V
CE
T = 25°C
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
30
I , COLLECTOR CURRENT (mA)
50 70 100
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
5.0 7.0 10
20
REVERSE VOLTAGE (VOLTS)
C
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
1.0
+0.5
0
T = 25°C
J
R
for V
CE(sat)
0.8
q
VC
V
@ I /I = 10
C B
BE(sat)
BE(on)
−ꢀ0.5
−ꢀ1.0
1.0 V
0.6
0.4
0.2
0
V
@ V = 10 V
CE
−ꢀ1.5
R
for V
BE
−ꢀ2.0
−ꢀ2.5
q
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500 1.0 k
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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5
MPS2222, MPS2222A
ORDERING INFORMATION
†
Device
Package
Shipping
MPS2222
TO−92
5000 Units / Bulk
5000 Units / Bulk
MPS2222G
TO−92
(Pb−Free)
MPS2222RLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPS2222RLRAG
TO−92
(Pb−Free)
MPS2222RLRM
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
MPS2222RLRMG
TO−92
(Pb−Free)
MPS2222RLRP
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
MPS2222RLRPG
TO−92
(Pb−Free)
MPS2222A
TO−92
5000 Units / Bulk
5000 Units / Bulk
MPS2222AG
TO−92
(Pb−Free)
MPS2222ARL
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPS2222ARLG
TO−92
(Pb−Free)
MPS2222ARLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
MPS2222ARLRAG
TO−92
(Pb−Free)
MPS2222ARLRM
MPS2222ARLRMG
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
TO−92
(Pb−Free)
MPS2222ARLRP
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
MPS2222ARLRPG
TO−92
(Pb−Free)
MPS2222AZL1
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
MPS2222AZL1G
TO−92
(Pb−Free)
MPS2222ACRLRP
MPS2222ACRLRPG
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MPS2222, MPS2222A
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021
0.055
0.105
0.020
D
X X
G
K
L
−−− 12.70
J
H
V
−−−
0.105
6.35
2.04
−−−
−−−
N
P
R
V
2.66
2.54
−−−
C
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
2.93
3.43
1
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
N
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPS2222/D
相关型号:
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Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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