MPS2222AZL1G [ROCHESTER]

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN;
MPS2222AZL1G
型号: MPS2222AZL1G
厂家: Rochester Electronics    Rochester Electronics
描述:

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN

开关 晶体管
文件: 总8页 (文件大小:767K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MPS2222, MPS2222A  
MPS2222A is a Preferred Device  
General Purpose  
Transistors  
NPN Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
COLLECTOR  
3
MAXIMUM RATINGS  
2
BASE  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MPS2222  
MPS2222A  
30  
40  
1
EMITTER  
CollectorBase Voltage  
EmitterBase Voltage  
Vdc  
Vdc  
MPS2222  
MPS2222A  
60  
75  
MPS2222  
MPS2222A  
5.0  
6.0  
TO−92  
CASE 29−11  
STYLE 1  
Collector Current − Continuous  
Total Device Dissipation  
I
600  
mAdc  
C
1
2
3
P
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
MARKING DIAGRAMS  
Total Device Dissipation  
P
D
@ T = 25°C  
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
MPS2222  
MPS2222A  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
MPS  
2222  
AYWW G  
G
MPS2  
222A  
AYWW G  
G
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
q
83.3  
MPS2222AC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
222  
2AC  
AYWW G  
G
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 2  
MPS2222/D  
MPS2222, MPS2222A  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
MPS2222  
MPS2222A  
V
30  
40  
Vdc  
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 10 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
MPS2222  
MPS2222A  
V
V
60  
75  
C
E
EmitterBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
MPS2222  
MPS2222A  
5.0  
6.0  
E
C
Collector Cutoff Current (V = 60 Vdc, V  
= 3.0 Vdc)  
MPS2222A  
I
10  
nAdc  
CE  
EB(off)  
CEX  
Collector Cutoff Current  
I
mAdc  
CBO  
(V = 50 Vdc, I = 0)  
MPS2222  
MPS2222A  
MPS2222  
0.01  
0.01  
10  
CB  
E
(V = 60 Vdc, I = 0)  
CB  
E
(V = 50 Vdc, I = 0, T = 125°C)  
CB  
E
A
A
(V = 50 Vdc, I = 0, T = 125°C)  
MPS2222A  
10  
CB  
E
Emitter Cutoff Current (V = 3.0 Vdc, I = 0)  
MPS2222A  
MPS2222A  
I
EBO  
100  
20  
nAdc  
nAdc  
EB  
C
Base Cutoff Current (V = 60 Vdc, V  
= 3.0 Vdc)  
I
BL  
CE  
EB(off)  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 0.1 mAdc, V = 10 Vdc)  
35  
50  
75  
35  
100  
50  
30  
40  
300  
C
CE  
CE  
CE  
CE  
CE  
CE  
CE  
(I = 1.0 mAdc, V = 10 Vdc)  
C
(I = 10 mAdc, V = 10 Vdc)  
C
(I = 10 mAdc, V = 10 Vdc, T = −55°C)  
MPS2222A only  
C
A
(I = 150 mAdc, V = 10 Vdc) (Note 1)  
C
(I = 150 mAdc, V = 1.0 Vdc) (Note 1)  
C
(I = 500 mAdc, V = 10 Vdc) (Note 1)  
C
MPS2222  
MPS2222A  
CollectorEmitter Saturation Voltage (Note 1)  
(I = 150 mAdc, I = 15 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
BE(sat)  
MPS2222  
MPS2222A  
MPS2222  
0.4  
0.3  
1.6  
1.0  
C
B
(I = 500 mAdc, I = 50 mAdc)  
C
B
MPS2222A  
BaseEmitter Saturation Voltage (Note 1)  
(I = 150 mAdc, I = 15 mAdc)  
V
MPS2222  
MPS2222A  
MPS2222  
0.6  
1.3  
1.2  
2.6  
2.0  
C
B
(I = 500 mAdc, I = 50 mAdc)  
C
B
MPS2222A  
SMALLSIGNAL CHARACTERISTICS  
CurrentGain − Bandwidth Product (Note 2)  
f
MHz  
T
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz)  
MPS2222  
MPS2222A  
250  
300  
C
CE  
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)  
C
obo  
8.0  
pF  
pF  
CB  
E
Input Capacitance  
C
ibo  
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
MPS2222  
MPS2222A  
30  
25  
EB  
C
Input Impedance  
h
kW  
ie  
re  
fe  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
MPS2222A  
MPS2222A  
2.0  
0.25  
8.0  
1.25  
C
CE  
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
−4  
Voltage Feedback Ratio  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
h
h
X 10  
MPS2222A  
MPS2222A  
8.0  
4.0  
C
CE  
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
Small−Signal Current Gain  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
MPS2222A  
MPS2222A  
50  
75  
300  
375  
C
CE  
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
Output Admittance  
h
oe  
mmhos  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
MPS2222A  
MPS2222A  
5.0  
25  
35  
200  
C
CE  
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
Collector Base Time Constant  
rbC  
150  
ps  
c
(I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz)  
MPS2222A  
MPS2222A  
E
CB  
Noise Figure  
NF  
4.0  
dB  
(I = 100 mAdc, V = 10 Vdc, R = 1.0 kW, f = 1.0 kHz)  
C
CE  
S
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.  
2. f is defined as the frequency at which |h | extrapolates to unity.  
T
fe  
http://onsemi.com  
2
 
C * < 10 pF  
S
                                       
2 V  
MPS2222, MPS2222A  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
SWITCHING CHARACTERISTICS MPS2222A only  
Delay Time  
t
t
10  
25  
ns  
ns  
ns  
ns  
d
(V = 30 Vdc, V  
= −0.5 Vdc,  
BE(off)  
CC  
I
= 150 mAdc, I = 15 mAdc) (Figure 1)  
B1  
Rise Time  
Storage Time  
Fall Time  
t
C
r
225  
60  
(V = 30 Vdc, I = 150 mAdc,  
s
CC  
C
I
= I = 15 mAdc) (Figure 2)  
B2  
B1  
t
f
SWITCHING TIME EQUIVALENT TEST CIRCUITS  
+ꢀ30 V  
200  
+ꢀ30 V  
1.0 to 100 ms,  
DUTY CYCLE 2.0%  
1.0 to 100 ms,  
DUTY CYCLE 2.0%  
200  
+16 V  
+16 V  
0
0
1 k  
< 20 ns  
1N914  
−14 V  
1 kW  
C * < 10 pF  
S
< 2 ns  
−ꢀ4 V  
Scope rise time < 4 ns  
*Total shunt capacitance of test jig, connectors, and oscilloscope.  
Figure 1. Turn−On Time  
Figure 2. Turn−Off Time  
1000  
700  
500  
T = 125°C  
J
300  
200  
25°C  
100  
70  
−55°C  
50  
30  
20  
V
V
= 1.0 V  
= 10 V  
CE  
CE  
10  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200 300  
500 700 1.0 k  
I , COLLECTOR CURRENT (mA)  
C
Figure 3. DC Current Gain  
http://onsemi.com  
3
 
MPS2222, MPS2222A  
1.0  
0.8  
T = 25°C  
J
I
C
= 1.0 mA  
0.6  
0.4  
0.2  
0
10 mA  
150 mA  
500 mA  
0.005  
0.01  
0.02 0.03  
0.05  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
20 30  
50  
I , BASE CURRENT (mA)  
B
Figure 4. Collector Saturation Region  
200  
500  
V
I /I = 10  
= 30 V  
I /I = 10  
C B  
CC  
300  
T = 25°C  
J
C B  
100  
t= t − 1/8 t  
f
s
s
200  
I = I  
B1 B2  
70  
50  
t @ V = 30 V  
CC  
r
t @ V  
T = 25°C  
J
= 2.0 V  
= 0  
d
t @ V  
EB(off)  
EB(off)  
100  
70  
d
30  
20  
t
f
50  
30  
20  
10  
7.0  
5.0  
10  
3.0  
2.0  
7.0  
5.0  
5.0 7.0 10  
20 30  
50 70 100  
200 300 500  
5.0 7.0 10  
20 30  
50 70 100  
200 300 500  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. TurnOn Time  
Figure 6. TurnOff Time  
10  
10  
R
R
R
= OPTIMUM  
= SOURCE  
= RESISTANCE  
S
S
S
f = 1.0 kHz  
= 50 mA  
I
= 1.0 mA, R = 150 W  
S
C
8.0  
8.0  
500 mA, R = 200 W  
S
I
C
100 mA, R = 2.0 kW  
S
100 mA  
500 mA  
1.0 mA  
50 mA, R = 4.0 kW  
S
6.0  
4.0  
2.0  
0
6.0  
4.0  
2.0  
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20  
50 100  
50 100 200  
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k  
R , SOURCE RESISTANCE (OHMS)  
f, FREQUENCY (kHz)  
S
Figure 7. Frequency Effects  
Figure 8. Source Resistance Effects  
http://onsemi.com  
4
MPS2222, MPS2222A  
30  
20  
500  
V
= 20 V  
CE  
T = 25°C  
J
300  
200  
C
eb  
10  
7.0  
5.0  
100  
C
cb  
3.0  
2.0  
70  
50  
30  
I , COLLECTOR CURRENT (mA)  
50 70 100  
0.1 0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 50  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
REVERSE VOLTAGE (VOLTS)  
C
Figure 9. Capacitances  
Figure 10. Current−Gain Bandwidth Product  
1.0  
+0.5  
0
T = 25°C  
J
R
for V  
CE(sat)  
0.8  
q
VC  
V
@ I /I = 10  
C B  
BE(sat)  
BE(on)  
−ꢀ0.5  
−ꢀ1.0  
1.0 V  
0.6  
0.4  
0.2  
0
V
@ V = 10 V  
CE  
−ꢀ1.5  
R
for V  
BE  
−ꢀ2.0  
−ꢀ2.5  
q
VB  
V
@ I /I = 10  
C B  
CE(sat)  
0.1 0.2 0.5 1.0 2.0 5.0 10 20  
50 100 200 500 1.0 k  
0.1 0.2 0.5 1.0 2.0  
5.0 10 20  
50 100 200 500  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 11. “On” Voltages  
Figure 12. Temperature Coefficients  
http://onsemi.com  
5
MPS2222, MPS2222A  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPS2222  
TO−92  
5000 Units / Bulk  
5000 Units / Bulk  
MPS2222G  
TO−92  
(Pb−Free)  
MPS2222RLRA  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
MPS2222RLRAG  
TO−92  
(Pb−Free)  
MPS2222RLRM  
TO−92  
2000 / Tape & Ammo Box  
2000 / Tape & Ammo Box  
MPS2222RLRMG  
TO−92  
(Pb−Free)  
MPS2222RLRP  
TO−92  
2000 / Tape & Ammo Box  
2000 / Tape & Ammo Box  
MPS2222RLRPG  
TO−92  
(Pb−Free)  
MPS2222A  
TO−92  
5000 Units / Bulk  
5000 Units / Bulk  
MPS2222AG  
TO−92  
(Pb−Free)  
MPS2222ARL  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
MPS2222ARLG  
TO−92  
(Pb−Free)  
MPS2222ARLRA  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
MPS2222ARLRAG  
TO−92  
(Pb−Free)  
MPS2222ARLRM  
MPS2222ARLRMG  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
TO−92  
(Pb−Free)  
MPS2222ARLRP  
TO−92  
2000 / Tape & Ammo Box  
2000 / Tape & Ammo Box  
MPS2222ARLRPG  
TO−92  
(Pb−Free)  
MPS2222AZL1  
TO−92  
2000 / Tape & Ammo Box  
2000 / Tape & Ammo Box  
MPS2222AZL1G  
TO−92  
(Pb−Free)  
MPS2222ACRLRP  
MPS2222ACRLRPG  
TO−92  
2000 / Tape & Ammo Box  
2000 / Tape & Ammo Box  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
6
MPS2222, MPS2222A  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
CASE 29−11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
K
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
D
X X  
G
K
L
−−− 12.70  
J
H
V
−−−  
0.105  
6.35  
2.04  
−−−  
−−−  
N
P
R
V
2.66  
2.54  
−−−  
C
−−− 0.100  
SECTION X−X  
0.115  
0.135  
−−−  
−−−  
2.93  
3.43  
1
−−−  
N
STYLE 1:  
PIN 1. EMITTER  
2. BASE  
N
3. COLLECTOR  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
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Order Literature: http://www.onsemi.com/litorder  
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For additional information, please contact your  
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MPS2222/D  

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ROCHESTER