MPS2369AG [ROCHESTER]
200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN;
| 型号： | MPS2369AG |
| 厂家： | 
Rochester Electronics |
| 描述： | 200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN 开关 晶体管 |
| 文件： | 总4页 (文件大小：803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
MPS2369
MPS2369A
Switching Transistors
NPN Silicon
*
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
15
Unit
Vdc
V
CEO
V
40
Vdc
CES
CBO
EBO
V
V
40
Vdc
4.5
200
Vdc
1
2
3
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
COLLECTOR
3
Thermal Resistance, Junction to Ambient
R
200
°C/W
q
JA
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
15
40
40
4.5
—
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
(I = 10 mAdc, I = 0)
MPS2369A
MPS2369,A
MPS2369,A
MPS2369,A
C
B
Collector–Emitter Breakdown Voltage
(I = 10 µAdc, V = 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
BE
Collector–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
Vdc
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
Vdc
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
µAdc
CBO
—
—
—
—
0.4
30
CB
E
(V = 20 Vdc, I = 0, T = 125°C)
MPS2369,A
MPS2369,A
CB
E
A
Collector Cutoff Current
(V = 20 Vdc, V = 0)
I
—
—
0.4
µAdc
CES
CE
BE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
793
Publication Order Number:
June, 2001 – Rev. 2
MPS2369/D
MPS2369 MPS2369A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
h
FE
—
(I = 10 mAdc, V = 1.0 Vdc)
MPS2369A
MPS2369
MPS2369
MPS2369A
MPS2369A
MPS2369A
MPS2369
MPS2369A
—
20
40
40
20
30
20
20
—
—
—
—
—
—
—
—
120
—
120
—
—
—
C
CE
(I = 10 mAdc, V = 1.0 Vdc, T = –55°C)
C
CE
A
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 0.35 Vdc)
C
CE
(I = 10 mAdc, V = 0.35 Vdc, T = –55°C)
C
CE
A
(I = 30 mAdc, V = 0.4 Vdc)
C
CE
(I = 100 mAdc, V = 2.0 Vdc)
—
—
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
C
CE
(1)
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
V
Vdc
Vdc
CE(sat)
MPS2369
—
—
—
—
—
—
—
—
—
—
0.25
0.20
0.30
0.25
0.50
C
B
(I = 10 mAdc, I = 1.0 mAdc)
MPS2369A
MPS2369A
MPS2369A
MPS2369A
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = +125°C)
C
B
A
(I = 30 mAdc, I = 3.0 mAdc)
C
B
(I = 100 mAdc, I = 10 mAdc)
C
B
(1)
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
BE(sat)
MPS2369
0.7
0.5
—
—
—
—
—
—
—
—
0.85
—
1.02
1.15
1.60
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = +125°C)
(I = 10 mAdc, I = 1.0 mAdc, T = –55°C)
MPS2369A
MPS2369A
MPS2369A
MPS2369A
C
B
A
C
B
A
(I = 30 mAdc, I = 3.0 mAdc)
C
B
(I = 100 mAdc, I = 10 mAdc)
C
B
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
C
—
—
—
4.0
—
pF
—
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
MPS2369,A
MPS2369,A
CB
E
Small–Signal Current Gain
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
h
5.0
fe
C
CE
SWITCHING CHARACTERISTICS
Storage Time
t
—
—
5.0
8.0
13
12
ns
ns
s
(I = I = I = 10 mAdc) (Figure 3)
MPS2369,A
MPS2369,A
MPS2369,A
B1
B2
C
Turn–On Time
t
on
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc)
CC
C
B1
(Figure 1)
Turn–Off Time
t
off
—
10
18
ns
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc,
CC
C
B1
I
B2
= 1.5 mAdc) (Figure 2)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
794
MPS2369 MPS2369A
t
1
3.0 V
270
+10.6 V
0
-1.5 V
3.3 k
C * < 4.0 pF
S
< 1.0 ns
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2.0%
Figure 1. ton Circuit
t
1
3.0 V
+10.75 V
270
0
-4.15 V
< 1.0 ns
3.3 k
C * < 4.0 pF
S
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2.0%
Figure 2. toff Circuit
t
1
10 V
+6.0 V
0
980
-4.0 V
500
C * < 3.0 pF
S
< 1.0 ns
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2.0%
Figure 3. Storage Test Circuit
*Total shunt capacitance of test jig and connectors.
http://onsemi.com
795
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ROCHESTER
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