NTB4302T4G [ROCHESTER]
74A, 30V, 0.0093ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3;
| 型号： | NTB4302T4G |
| 厂家： | 
Rochester Electronics |
| 描述： | 74A, 30V, 0.0093ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：763K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP4302, NTB4302
Power MOSFET
74 Amps, 30 Volts
N−Channel TO−220 & D2PAK
http://onsemi.com
Features
• Low R
DS(on)
V
R
DS(ON)
MAX
I MAX
D
DSS
• Higher Efficiency Extending Battery Life
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
30 V
9.3 mW @ 10 V
74 A
N−Channel
D
• I
Specified at Elevated Temperature
DSS
• Pb−Free Packages are Available
Typical Applications
G
4
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery Powered Products:
Ie: Computers, Printers, Cellular and Cordless Telephones, and
PCMCIA Cards
S
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage
Symbol Value
Unit
Vdc
Vdc
Vdc
1
2
3
V
V
30
30
2
DSS
TO−220AB
CASE 221A
STYLE 5
D PAK
CASE 418AA
STYLE 2
Drain−to−Gate Voltage (R = 10 MW)
1
GS
DGR
2
3
Gate−to−Source Voltage − Continuous
V
"20
GS
Drain Current
MARKING DIAGRAMS
& PIN ASSIGNMENTS
− Continuous @ T = 25°C
I
I
74
47
175
Adc
Apk
C
D
D
− Continuous @ T = 100°C
C
− Single Pulse (t v10 ms)
p
I
4
DM
Drain
Total Power Dissipation @ T = 25°C
P
80
0.66
W
W/°C
4
C
D
Derate above 25°C
Drain
Operating and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
NTx4302G
AYWW
NTx4302G
AYWW
Single Pulse Drain−to−Source Avalanche
E
722
mJ
AS
Energy − Starting T = 25°C
J
(V = 30 Vdc, V = 10 Vdc, L = 5.0 mH
DD
GS
1
Gate
3
I
= 17 A, V = 30 Vdc, R = 25 W)
L(pk)
DS G
1
2
3
Source
Thermal Resistance
°C/W
°C
Gate Drain Source
2
− Junction−to−Case
− Junction−to−Ambient (Note 1)
R
R
1.55
70
q
JC
Drain
q
JA
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
260
NTx4302
x
= Device Code
L
= B or P
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 Board using minimum recommended Pad
Size, (Cu Area 0.412 in ).
2. Current limited by internal lead wires.
ORDERING INFORMATION
2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 3
NTP4302/D
NTP4302, NTB4302
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V = 0 Vdc, I = 250 mAdc)
V
Vdc
(BR)DSS
30
−
−
25
−
−
GS
D
Temperature Coefficient (Positive)
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
I
DSS
GSS
(V = 30 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 30 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current (V
=
20 Vdc, V = 0 Vdc)
−
−
100
nAdc
Vdc
GS
DS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
V
GS(th)
(V = V , I = 250 mAdc)
Threshold Temperature Coefficient (Negative)
1.0
−
1.9
−3.8
3.0
−
DS
GS
D
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 3)
R
DS(on)
(V = 10 Vdc, I = 37 Adc)
−
−
6.8
6.8
9.5
9.3
9.3
12.5
GS
D
(V = 10 Vdc, I = 20 Adc)
GS
D
(V = 4.5 Vdc, I = 10 Adc)
GS
D
Forward Transconductance (Note 3) (V = 10 Vdc, I = 20 Adc)
g
FS
40
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
2050
640
2400
800
iss
(V = 24 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
rss
225
310
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
10
22
45
35
18
70
32
30
28
7.5
19
18
35
75
70
−
ns
ns
d(on)
Rise Time
t
r
(V = 24 Vdc, I = 20 Adc,
DD
D
V
= 10 Vdc, R = 2.5 W) (Note 3)
G
GS
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn−On Delay Time
Rise Time
d(on)
t
−
r
(V = 24 Vdc, I = 10 Adc,
DD
D
V
= 4.5 Vdc, R = 2.5 W) (Note 3)
G
GS
Turn−Off Delay Time
Fall Time
−
d(off)
t
−
f
Gate Charge
Q
−
nC
T
(V = 24 Vdc, I = 37 Adc,
DS
D
Q
−
gs
gd
V
= 4.5 Vdc) (Note 3)
GS
Q
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 20 Adc, V = 0 Vdc) (Note 3)
V
−
−
0.90
0.75
1.3
−
Vdc
ns
S
GS
SD
(I = 20 Adc, V = 0 Vdc, T = 125°C)
S
GS
J
Reverse Recovery Time
t
−
−
−
−
37
21
−
−
−
−
rr
(I = 20 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms) (Note 3)
S
t
16
b
Reverse Recovery Stored Charge
Q
0.035
mC
RR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTP4302, NTB4302
60
V
= 10 V
GS
70
60
50
40
30
20
10
7 V
5 V
V
≥ 10 V
DS
4.4 V
50
T = 25_C
J
4.6 V
4 V
40
3.8 V
30
T = 25°C
J
3 V
2.8 V
20
10
0
3.4 V
3.2 V
T = 100°C
J
T = −55°C
J
0
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.06
0.015
0.01
I
= 20 A
D
T = 25°C
J
T = 25°C
J
V
V
= 4.5 V
= 10 V
GS
0.04
0.02
0
0.005
GS
0
0
2
4
6
8
10
0
10
20
30
40
50
60
70
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
1000
1.6
1.4
I
V
= 20 A
V
= 0 V
D
GS
= 10 V
GS
T = 150°C
J
1.2
1
100
10
T = 100°C
J
0.8
0.6
1
−50 −25
0
25
50
75
100
125 150
0
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTP4302, NTB4302
6000
5000
4000
3000
2000
1000
5
30
24
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
Q
T
V
DS
4
V
GS
C
iss
Q
Q
2
1
18
12
6
3
2
C
rss
C
C
iss
1
0
oss
I
= 37 A
D
T = 25°C
J
C
rss
0
10
V
0 V
10
20
30
0
10
20
30
GS
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
100
25
20
V
I
V
= 24 V
= 20 A
= 10 V
V
= 0 V
GS
DD
GS
T = 25°C
J
D
t
d(off)
t
f
15
10
t
r
10
1
t
d(on)
5
0
0.5
1
10
100
0.6
0.7
0.8
0.9
1
R , GATE RESISTANCE (W)
G
V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Resistive Switching Time Variations
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
1000
100
10
800
700
600
500
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
I
= 17 A
D
thick single sided) with one die operating, 10 s max.
V
= 20 V
GS
SINGLE PULSE
= 25°C
T
C
10 ms
400
300
200
100
0
100 ms
1 ms
10 ms
dc
10
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
100
25
50
75
100
125
150
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP4302, NTB4302
SAFE OPERATING AREA
1.00
D = 0.5
0.2
0.1
P
0.05
(pk)
0.10
R
(t) = r(t) R
q
JC
q
JC
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
SINGLE PULSE
t
1
1
t
2
T
− T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
t, TIME (s)
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
ORDERING INFORMATION
†
Device
NTP4302
Package
Shipping
TO−220AB
50 Units / Rail
50 Units / Rail
NTP4302G
TO−220AB
(Pb−Free)
2
NTB4302
D PAK
50 Units / Rail
50 Units / Rail
2
NTB4302G
D PAK
(Pb−Free)
2
NTB4302T4
D PAK
800 / Tape & Reel
800 / Tape & Reel
2
NTB4302T4G
D PAK
(Pb−Free)
†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTP4302, NTB4302
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
V
−B−
W
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.036
0.045 0.055
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.92
1.40
−−−
A
S
1
2
3
0.310
−−−
G
J
K
M
S
V
0.100 BSC
0.018 0.025
0.090 0.110
2.54 BSC
0.46
2.29
7.11
0.64
2.79
−−−
−T−
SEATING
PLANE
K
W
0.280
−−−
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
J
G
STYLE 2:
PIN 1. GATE
D 3 PL
M
M
0.13 (0.005)
T B
2. DRAIN
3. SOURCE
4. DRAIN
VARIABLE
CONFIGURATION
ZONE
U
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
NTP4302, NTB4302
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NTP4302/D
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