SMS15T1 [ROCHESTER]

350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, CASE 318F-05, SC-74, SC-59ML, 6 PIN;
SMS15T1
型号: SMS15T1
厂家: Rochester Electronics    Rochester Electronics
描述:

350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, CASE 318F-05, SC-74, SC-59ML, 6 PIN

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SMS05T1 Series  
SC−74 Quad Transient  
Voltage Suppressor  
for ESD Protection  
This quad monolithic silicon voltage suppressor is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems and  
other applications. This quad device provides superior surge  
protection over current quad Zener MMQA series by providing up to  
350 watts peak power.  
http://onsemi.com  
SC−74 QUAD TRANSIENT  
VOLTAGE SUPPRESSOR  
350 WATTS PEAK POWER  
5 VOLTS  
Features  
SC-74 Package Allows Four Separate Unidirectional Configurations  
Peak Power − 350 W, 8 x 20 mS  
ESD Rating of Class N (Exceeding 25 kV) per  
the Human Body Model  
SC−74  
CASE 318F  
STYLE 1  
6
1
ESD Rating:  
IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)  
IEC 61000−4−4 (EFT) 40 A (5/50 ns)  
IEC 61000−4−5 (lightning) 23 A (8/20 ms)  
UL Flammability Rating of 94 V−0  
MARKING DIAGRAM  
Pb−Free Packages are Available  
xxx M G  
G
Typical Applications  
1
Hand Held Portable Applications such as Cell Phones, Pagers,  
Notebooks and Notebook Computers  
xxx = Specific Device Code  
M
= Date Code*  
G
= Pb−Free Package  
MAXIMUM RATINGS  
(Note: Microdot may be in either location)  
*Date Code orientation and/or position may  
vary depending upon manufacturing location.  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation  
P
350  
W
pk  
8 x 20 mS @ T = 25°C (Note 1)  
A
PIN ASSIGNMENT  
Total Power Dissipation on FR−5 Board  
P
225  
mW  
D
@ T = 25°C (Note 2)  
A
Derate Above 25°C  
1.8  
mW/°C  
°C/W  
PIN 1. CATHODE  
2. ANODE  
1
2
3
6
5
4
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
556  
3. CATHODE  
4. CATHODE  
5. ANODE  
Junction and Storage  
Temperature Range  
T , T  
55 to +150  
260  
°C  
°C  
J
stg  
6. CATHODE  
Lead Solder Temperature  
Maximum 10 Seconds Duration  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Non−repetitive current pulse 8 x 20 mS exponential decay waveform  
2. FR−5 = 1.0 x 0.75 x 0.62 in.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 7  
SMS05T1/D  
 
SMS05T1 Series  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
I
I
Maximum Reverse Peak Pulse Current  
PP  
I
F
V
Clamping Voltage @ I  
PP  
C
V
Working Peak Reverse Voltage  
RWM  
I
Maximum Reverse Leakage Current @ V  
R
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
V
V
V
BR RWM  
C
V
I
V
I
R
T
F
T
I
QV  
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
F
V
Forward Voltage @ I  
F
F
I
PP  
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
ZK  
I
ZK  
Uni−Directional  
Z
Maximum Zener Impedance @ I  
ZK  
ELECTRICAL CHARACTERISTICS − UNIDIRECTIONAL  
Max  
Reverse  
Breakdown  
Leakage  
Voltage  
Current  
Max Reverse Voltage Max Reverse Voltage  
(Clamping Voltage) (Clamping Voltage)  
At Specified Reverse At Specified Reverse  
Surge Current (I Surge Current (I  
Capacitance  
@ 0 Volt Bias,  
1 MHz  
)
)
RSM  
RSM  
I
V
I
V
RSM  
RSM  
RSM  
RSM  
(8x20 ms) (8x20 ms) (8x20 ms) (8x20 ms)  
V
(V)  
BR  
I
I
V
R
(pF)  
T
R
Device  
Marking  
Min Nom Max (mA) (mA) (V)  
(A)  
5.0  
5.0  
5.0  
5.0  
(V)  
9.8  
(A)  
23  
15  
12  
8
(V)  
Min  
250  
80  
Max  
400  
150  
125  
75  
Device  
SMS05T1  
SMS12T1  
SMS15T1  
SMS24T1  
5V0  
12V  
15V  
24V  
6.0  
7.2  
15  
1.0  
1.0  
1.0  
1.0  
20  
1.0  
1.0  
1.0  
5.0  
12  
15  
24  
15.5  
23.0  
29.0  
44.0  
13.3  
16.7  
26.7  
19.0  
24.0  
40.0  
18.5  
32  
60  
40  
ORDERING INFORMATION  
Device  
Package  
Shipping  
SMS05T1  
SC−74  
3000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
SMS05T1G  
SC−74  
(Pb−Free)  
SMS12T1  
SC−74  
SMS12T1G  
SC−74  
(Pb−Free)  
SMS15T1  
SC−74  
SMS15T1G  
SC−74  
(Pb−Free)  
SMS24T1  
SC−74  
SMS24T1G  
SC−74  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
2
SMS05T1 Series  
10  
1
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
0.1  
10  
0
0.01  
0.1  
1
10  
100  
1000  
0
0
0
25  
50  
75  
100  
125  
150  
t , PULSE DURATION (ms)  
T , AMBIENT TEMPERATURE (°C)  
p
A
Figure 1. Non−Repetitive Peak Pulse Power  
versus Pulse Time  
Figure 2. Power Derating Curve  
110  
100  
90  
50  
45  
40  
35  
30  
25  
20  
15  
10  
WAVEFORM  
WAVEFORM  
PARAMETERS  
t = 8 ms  
PARAMETERS  
t = 8 ms  
SMS24  
r
r
80  
70  
60  
50  
40  
30  
20  
t = 20 ms  
d
t = 20 ms  
d
c−t  
SMS15  
t = I /2  
d
SMS12  
PP  
SMS05  
5
0
10  
0
0
5
10  
15  
t, TIME (ms)  
20  
25  
30  
5
10  
15  
20  
25  
I
, PEAK PULSE CURRENT (A)  
PP  
Figure 3. Pulse Waveform  
Figure 4. Clamping Voltage versus  
Peak Pulse Current  
300  
250  
200  
150  
100  
5
PULSE  
WAVEFORM  
t = 8 ms  
T = 25°C  
J
4
3
2
r
t = 20 ms  
d
8 X 20 ms SURGE  
SMS05  
SMS12  
SMS15  
1
0
50  
0
SMS24  
0
5
10  
15  
20  
5
10  
15  
20  
25  
I , FORWARD CURRENT (A)  
F
V , REVERSE VOLTAGE (V)  
R
Figure 5. 8 x 20 ms VF  
Figure 6. Typical Capacitance (SMS05 Series)  
http://onsemi.com  
3
SMS05T1 Series  
PACKAGE DIMENSIONS  
SC−74 (SC−59ML)  
CASE 318F−05  
ISSUE M  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
D
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
4. 318F−01, −02, −03, −04 OBSOLETE. NEW  
STANDARD 318F−05.  
6
5
2
4
E
H
E
1
3
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.015  
0.007  
0.118  
0.059  
0.037  
0.016  
0.108  
DIM  
A
A1  
b
c
D
E
e
L
H
E
MIN  
0.90  
0.01  
0.25  
0.10  
2.90  
1.30  
0.85  
0.20  
2.50  
0°  
NOM  
1.00  
0.06  
0.37  
0.18  
3.00  
1.50  
0.95  
0.40  
2.75  
MAX  
1.10  
0.10  
0.50  
0.26  
3.10  
1.70  
1.05  
0.60  
3.00  
10°  
MIN  
0.035  
0.001  
0.010  
0.004  
0.114  
0.051  
0.034  
0.008  
0.099  
0°  
MAX  
0.043  
0.004  
0.020  
0.010  
0.122  
0.067  
0.041  
0.024  
0.118  
10°  
b
e
q
C
A
0.05 (0.002)  
L
q
A1  
STYLE 1:  
PIN 1. CATHODE  
2. ANODE  
3. CATHODE  
4. CATHODE  
5. ANODE  
6. CATHODE  
SOLDERING FOOTPRINT*  
2.4  
0.094  
0.95  
0.037  
1.9  
0.074  
0.95  
0.037  
0.7  
0.028  
1.0  
0.039  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
SMS05T1/D  

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