2SA1812T101/N [ROHM]

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,;
2SA1812T101/N
元器件型号: 2SA1812T101/N
生产厂家: ROHM    ROHM
描述和应用:

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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PDF文件: 总3页 (文件大小:117K)
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型号参数:2SA1812T101/N参数

2SA1812T101/NP

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T101/NQ

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T101/PQ

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T101/PQ

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T101N

500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR

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0 ROHM

2SA1812T101N

500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR

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0 ROHM

2SA1812T101P

500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR

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0 ROHM

2SA1812T101P

500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR

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0 ROHM

2SA1812T101Q

500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR

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0 ROHM

2SA1813

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications

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58 SANYO

2SA1813

PNP Epitaxial Planar Silicon Transistors

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19 KEXIN

2SA1813

Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).

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15 TYSEMI

2SA1814

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications

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45 SANYO

2SA1815

FM,RM,MIX,IF Amp, High-Frequency General-Purpose Amp Applications

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402 SANYO

2SA1815

PNP Epitaxial Planar Silicon Transistors

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84 KEXIN