2SA830/AB [ROHM]
Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, TO-92;
| 型号： | 2SA830/AB |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Silicon, TO-92 晶体 放大器 晶体管 |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB852K / 2SA830S
Transistors
High-gain Amplifier Transistor (−32V, −0.3A)
2SB852K / 2SA830S
zExternal dimensions (Unit : mm)
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1383K / 2SD1645S.
2SB852K
2.9
1.1
0.8
0.4
( )
3
zCircuit diagram
(
)
( )
1
2
C
0.95 0.95
1.9
0.15
(1)Emitter
(2)Base
B
Each lead has same dimensions
(3)Collector
RBE 4kΩ
2SA830S
E : Emitter
B : Base
C : Collector
4.0
2.0
E
0.45
2.5
zPackaging specifications
0.45
0.5
Type
2SB852K
2SA830S
5.0
(1) (2) (3)
Package
SMT3
B
SPT
B
hFE
(1)Emitter
(2)Collector
(3)Base
Marking
Code
U
∗
−
Taping specifications
T146
3000
TP
5000
Basic ordering unit (pieces)
Denotes hFE
∗
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−40
−32
−6
−0.3
Unit
V
V
V
A
VCBO
∗
V
V
CES
EBO
I
C
2SB852K
2SA830S
0.2
0.3
Collector power
dissipation
W
P
C
Junction temperature
Storage temperature
∗ RBE=0Ω
Tj
Tstg
150
−55 to +150
°C
°C
Rev.A
1/3
2SB852K / 2SA830S
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
BVCBO
BVCES
BVEBO
Min.
−40
−32
−6
−
Typ.
−
−
−
−
−
−
−
200
3
Max.
−
−
Unit
V
Conditions
I
I
I
C
= −100µA
= −1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
V
C
−
V
E
= −100µA
CB= −24V
EB= −4.5V
CE= −5V, I
= −200mA, I
CE= −5V, I
CB= −10V, I
I
CBO
EBO
FE
CE(sat)
−1
−1
−
−1.5
−
µA
µA
−
V
V
V
I
−
Emitter cutoff current
h
C
= −0.1A
= −0.4mA
=10mA, f=100MHz
5000
−
−
DC current transfer ratio
I
C
B
∗
∗
1
2
V
V
Collector-emitter saturation voltage
Transition frequency
f
T
MHz
pF
V
V
E
E
=0A, f=1MHz
Cob
−
−
Output capacitance
∗
1 Measured using pulse current.
2 Transition frequency of the device.
∗
zElectrical characteristic curves
125
−500
−200
−100
−80
V
CE= −6V
−10µA
Ta=25°C
−9µA
−8µA
−7µA
−6µA
−5µA
100
75
−100
−50
−60
−40
−20
50
−10
−5
−4µA
−3µA
−2µA
25
0
−20
−2
IB=0
0
−0.4
0
0
−0.8
−1.2
−1.6
−2.0
−2.4
0
25
50
75
100
125
150
−1
−2
−3
−4
−5
BASE TO EMITTER VOLTAGE : VBE (V)
AMBIENT TEMPERATURE : Ta (°C)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter propagation characteristisc
Fig.1 Power dissipation curves
Fig.3 Ground emitter output characteristics
100000
50000
−20
VCE= −5V
Ta=25°C
IC/IB=500
−10
−5
−5V
20000
50000
20000
10000
5000
−2
−1
10000
5000
C
°
55
−
Ta= −55°C
2000
V
CE= −3V
1000
500
100°C
−0.5
25°C
2000
1000
500
−0.2
−0.1
200
100
−5 −10
−20
−50 −100 −200
−500 −1000 −2000
−2
−5 −10
−20
−50 −100 −200
−500 −1000 −2000
−5
−10
−20
−50
−100
−200
−500
−1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
Fig.4 DC current gain vs. collector current ( Ι )
Fig.6 Collector-emitter saturation voltage
vs. collector current
Rev.A
2/3
2SB852K / 2SA830S
Transistors
20
100
50
Ta=25°C
5V
Ta=25°C
Ta=25°C
VCE= −
10000
5000
f=1MHz
f=1MHz
I
E=0A
IE=0A
10
2000
1000
20
10
5
5
500
200
100
2
1
2
1
50
1
2
5
10 20
50
100 200
−1
−2
−5
−10
−20
−50
−1
−2
−5
−10
EMITTER CURRENT : I
E (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Emitter input capacitance
vs. emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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Small Signal Bipolar Transistor, 0.3A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
ROHM
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