2SAR293P5 [ROHM]
2SAR293P5是低VCE(sat)的低频放大用晶体管。;
| 型号： | 2SAR293P5 |
| 厂家： | 
ROHM |
| 描述： | 2SAR293P5是低VCE(sat)的低频放大用晶体管。 晶体管 |
| 文件： | 总7页 (文件大小：1770K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SAR293P5
Middle Power Transistors (-30V / -1.0A)
Datasheet
lOutline
Parameter
Value
MPT3
ꢀ
V
CEO
-30V
I
C
-1A
ꢀ
ꢀ
(SC-62)
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llFeatures
1) Suitable for Middle Power Driver.
llInner circuit
2) Complementary NPN Types : 2SCR293P5.
3) Low V
CE(sat)
ꢀꢀV =-350mV(Max.).
CE(sat)
ꢀꢀ(I /I =-500mA/-25mA)
C B
llApplication
LOW FREQUENCYAMPLIFIER, DRIVER
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llPackaging specifications
Basic
Package
Taping Reel size Tape width
Part No.
Package
ordering
Marking
ML
size
code
(mm)
(mm)
unit.(pcs)
2SAR293P5
MPT3
6595
T100
330
16
1000
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
1/6
20150724 - Rev.001
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2SAR293P5
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Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
-30
-30
V
-6
V
-1
-2
A
Collector current
Power dissipation
*1
ICP
A
*2
PD
0.5
W
W
℃
℃
*3
PD
2.0
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
-30
Typ.
Max.
-
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
BVCBO
BVCEO
I = -10μA
-
V
V
C
I = -1mA
-30
-
-
C
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I = -10μA
-6
-
-
V
nA
nA
mV
-
E
V
CB
V
EB
= -30V
= -6V
-
-
-100
-100
-350
680
IEBO
-
-
-
-150
-
*4
Collector-emitter saturation voltage
DC current gain
I = -500mA, I = -25mA
C
V
B
CE(sat)
hFE
V
CE
= -2V, I = -100mA
270
C
V
= -2V, I = 100mA,
E
CE
*4
Transition frequency
Output capacitance
Turn-On time
-
-
-
-
-
320
7
-
-
-
-
-
MHz
pF
ns
f
T
f = 100MHz
V
CB
= -10V, I = 0A,
E
Cob
ton
tstg
tf
f = 1MHz
I = -500mA,
C
60
I
I
= -25mA,
= 25mA,
⋍ -5V,
B1
B2
Storage time
160
50
ns
V
CC
R = 10Ω
See test circuit
L
Fall time
ns
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*1ꢀPw=10ms Sigle Pulse
*2ꢀEach terminal mounted on a reference land.
*3ꢀMounted on a ceramic board(40×40×0.7 mm) .
*4ꢀPulsed
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ꢀ
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/6
20150724 - Rev.001
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2SAR293P5
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.1 Grounded Emitter Propagation
Fig.2 Typical Output Characteristics
ꢀꢀꢀꢀCharacteristics
Fig.3 DC Current Gain vs. Collector
Fig.4 DC Current Gain vs. Collector
ꢀꢀꢀꢀCurrent(I)
ꢀꢀꢀꢀCurrent(II)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/6
20150724 - Rev.001
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2SAR293P5
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.5 Collector-Emitter Saturation
Fig.6 Collector-Emitter Saturation
ꢀꢀꢀꢀVoltage vs. Collector Current(I)
ꢀꢀꢀꢀVoltage vs. Collector Current(II)
Fig.7 Base-Emitter Saturation Voltage
Fig.8 Gain Bandwidth Product
ꢀꢀꢀꢀvs. Collector Current
ꢀꢀꢀꢀvs. Emitter Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/6
20150724 - Rev.001
ꢀ ꢀ ꢀ
2SAR293P5
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.9 Emitter input capacitance
ꢀꢀꢀꢀvs.Emitter-Base Voltage
Collector output capacitance vs.
Collector-Base Voltage
Fig.10 Safe Operating Area
SWITCHING TIME TEST CIRCUIT
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/6
20150724 - Rev.001
2SAR293P5
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/6
20150724 - Rev.001
相关型号：
2SAR293PT100
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MPT3, SC-63, 3 PIN
ROHM
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