2SB1188T100/Q [ROHM]
2000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN;
| 型号： | 2SB1188T100/Q |
| 厂家： | 
ROHM |
| 描述： | 2000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN 开关 晶体管 |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB1188 / 2SB1182 / 2SB1240
Transistors
Medium power transistor (−32V, −2A)
2SB1188 / 2SB1182 / 2SB1240
zExternal dimensions (Unit : mm)
zFeatures
1) Low VCE(sat).
2SB1188
2SB1182
VCE(sat) = −0.5V (Typ.)
(IC/IB = −2A / −0.2A)
2) Complements the 2SD1766 / 2SD1758 /
2SD1862.
+0.2
2.3
6.5 0.2
+0.2
+0.2
4.5
−
0.1
C0.5
−0.1
+
0.2
5.1
1.5
0.5 0.1
−
0.1
1.6 0.1
−0.1
0.65 0.1
0.75
(1) (2) (3)
+
0.1
0.4
0.9
−0.05
0.55 0.1
1.0 0.2
0.5 0.1
3.0 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
2.3 0.2 2.3 0.2
zStructure
Epitaxial planar type
PNP silicon transistor
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
Abbreviated symbol: BC
∗
2SB1240
2.5 0.2
6.8 0.2
0.65Max.
0.5 0.1
(1) (2)
2.54
(3)
2.54
1.05
0.45 0.1
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
Denotes hFE
∗
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−40
−32
−5
Unit
VCBO
VCEO
VEBO
V
V
V
−2
A(DC)
I
C
Collector current
1
A (Pulse)
−3
∗
0.5
W
W
2SB1188
2
2
)
∗
Collector power
P
C
W (Tc=25°C
2SB1182
2SB1240
10
1
dissipation
W
3
∗
Junction temperature
Storage temperature
1 Single pulse, Pw=100ms
Tj
150
°C
°C
Tstg
−55 to 150
∗
∗
∗
2 When mounted on a 40
×
40×
0.7 mm ceramic board.
3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Rev.A
1/3
2SB1188 / 2SB1182 / 2SB1240
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
−40
−32
−5
−
I
I
I
C
= −50
= −1mA
= −50
µ
A
−
−
V
C
−
−
V
E
µA
I
CBO
EBO
CE(sat)
FE
−
−1
−1
−0.8
390
−
µ
µ
A
A
V
V
CB= −20V
EB= −4V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
V
−
V
IC/IB= −2A/ −0.2A
−0.5
−
∗
∗
DC current transfer ratio
Transition frequency
Output capacitance
h
82
−
−
V
V
V
CE= −3V, I
C
= −0.5A
=0.5A, f=100MHz
=0A, f=1MHz
f
T
100
50
MHz
pF
CE= −5V, I
E
Cob
−
−
CB= −10V, I
E
Measured using pulse current.
∗
zPackaging specifications and hFE
Package
Code
Taping
TL
T100
TV2
2500
−
Type
h
FE Basic ordering unit (pieces)
1000
2500
−
2SB1188
2SB1182
2SB1240
PQR
PQR
PQR
−
−
−
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
−
−
−
−
−
0.5
0.4
0.3
0.2
V
CE= −3V
Ta=25°C
Ta=25°C
500
2.5mA
−
Ta=100°C
25°C
−
1000
V
CE= −6V
−3V
−1V
−
500
−40°C
200
100
50
−
200
100
−
−50
−
20
10
−
−5
0.1
0
−
−
2
1
I =0A
1.6
B
20
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
−
2000
0
−0.2
−0.4
−
0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−
1.8
−2.0
−
2.2
0
−
0.4
−
0.8
−
1.2
−
−2
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs.
collector curren (
Fig.2 Grounded emitter output
characteristics
)
Rev.A
2/3
2SB1188 / 2SB1182 / 2SB1240
Transistors
Ta=25°C
V
CE= −3V
lC/lB=10
−
500
500
−500
Ta=100°C
25°C
−25°C
−
−
200
100
−
200
100
200
−
Ta=100°C
25°C
−40°C
100
50
I
C/I
B
=
50
−
50
−
50
20
10
−
20
20
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
−
2000
−5
−10
−20
−50
−100
−200
−500
−1000
−
2000
−5
−10
−20
−50
−100
−200
−500 −1000 −2000
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current (
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
Fig.4 DC current gain vs.
collector current (
)
)
Ta
=25°C
Ta=25°C
500
Ta
=
25°C
1MHz
0A
0A
300
200
V
CE= −5V
Cib
f
I
I
=
E
=
−1
C=
IC /IB=10
100
50
200
100
50
−0.5
Cob
−
0.2
0.1
20
10
−
−0.05
5
10
20
50
100 200
500 1000 2000
−5
−10
−20
−50 −100 −200 −500 −1000 −2000
−
0.5
−
1
−
2
−
5
−
10
−20 −30
EMITTER CURRENT : I (mA)
E
COLLETOR CURRENT : I (mA)
C
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
−
5
−
5
I
C Max. (pulse)
IC Max (Pulse)
.
PW=500µs
−
−
2
1
−
−
2
1
DC
−
0.5
−
0.5
P
W
=1ms
100ms
PW=
−
−
0.2
0.1
−
−
0.2
0.1
−
0.05
−
0.05
Ta=25°C
∗Single
Ta=25°C
∗Single
−
−
0.02
0.01
−
−
0.02
0.01
nonrepetitive
pulse
nonrepetitive
pulse
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
COLLECTOR TO EMITTER VOLTAGE :
VCE (V)
COLLECTOR TO EMITTER VOLTAGE :
VCE (V)
Fig.11 Safe operation area
(2SB1182)
Fig.10 Safe operation area
(2SB1188)
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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