2SB1386T100 [ROHM]
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon;型号: | 2SB1386T100 |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon |
文件: | 总4页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transistors
Low Frequency Transistor
(*20V,*5A)
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
FFeatures
FExternal dimensions (Units: mm)
1) Low VCE(sat).
VCE(sat) = *0.35V (Typ.)
(IC / IB = *4A / *0.1A)
2) Excellent DC current gain charac-
teristics.
3) Complements the 2SD2098 /
2SD2118 / 2SD2097 / 2SD2166.
FStructure
Epitaxial planar type
PNP silicon transistor
(96-141-B204)
211
Transistors
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
212
Transistors
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
FPackaging specifications and hFE
hFE values are classified as follows:
FElectrical characteristic curves
213
Transistors
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
214
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