2SB1412QTL [ROHM]

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN;


型号：	2SB1412QTL
厂家：	ROHM
描述：	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN
文件：	总4页 (文件大小：186K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Low frequency transistor (−20V,−5A)

2SB1412

zFeatures

zDimensions (Unit : mm)

1) Low V^CE(sat).

2SB1412

V^CE(sat)= −0.35V (Typ.)

(I^C/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2118.

zStructure

Epitaxial planar type

PNP silicon transistor

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−30

−20

−6

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

−5

A(DC)

A(Pulse)

Collector current

Collector power

−10

∗

2SB1412

dissipation

W(Tc=25°C

)

Junction temperature

Storage temperature

1 Single pulse, Pw=10ms

150

°C

Tstg

−55 to 150

∗

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

−

Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−30

−20

−6

−

= −50

= −1mA

= −50

Collector-emitter breakdown voltage BVCEO

−

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

CBO

EBO

CE(sat)

−

−0.5

−1.0

390

−

CB= −20V

EB= −5V

Emitter cutoff current

−

Collector-emitter saturation voltage

−

0.35

−

/I = −4A/ −0.1A

∗

−

CE= −2V, I

= −0.5A

=50mA, f=100MHz

=0A, f=1MHz

DC current transfer ratio

Transition frequency

120

MHz

CE= −6V, I

Output capacitance

Cob

−

CB= −20V, I

Measured using pulse current.

∗

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2009.12 - Rev.C

1/3

2SB1412

Data Sheet

zPackaging specifications and h^FE

Package

Code

Taping

Basic ordering

unit (pieces)

2500

hFE

Type

2SB1412

PQR

hFE values are classified as follows :

Item

hFE

82 to 180 120 to 270 180 to 390

zElectrical characteristic curves

−10

−5

−4

−3

−2

−1

−

50mA

45mA

40mA

35mA

Ta=25°C

CE= −2V

−5

−2

−1

−500m

Ta=

100°C

25°C

−

15mA

10mA

−

25°C

500

^CE= −5V

−200m

−100m

−50m

200

100

−

−2V

−1V

−20m

−10m

−5m

−5mA

−2m

−1m

=0A

−

−0.01

−

0.02

−

0.05

−

0.1

−0.2

−0.5

−1

−2

−5 −10

−0.4

−0.8

−1.2

−1.6 −2.0

−0.2

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4

COLLECTOR CURRENT : I (A)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output

characteristics

Fig.3 DC current gain vs.

collector current (

Fig.1 Grounded emitter propagation

characteristics

)

−5

VCE= −1V

CE= −2V

Ta=25°C

−2

−1

500

−0.5

200

100

200

100

−0.2

−0.1

Ta=

100°C

C/I

=50/1

Ta=

100°C

40/1

25°C

30/1

10/1

−25°C

−

25°C

−0.05

−0.02

−0.01

−1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2

−5 −10

−1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2

−5 −10

−

0.0−

-0.02

−0.05

−0.1

−0.2

−0.5

−1

−2

−5

−

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : I (A)

Fig.4 DC current gain vs.

collector current (

Fig.5 DC current gain vs.

collector current (

Fig.6 Collector-emitter saturation

voltage vs. collector current (

)

−5

−

−5

lC/lB=10

lC/lB=30

lC/lB=40

−

−25°C

25°C

−

Ta=

100°C

25°C

−

0.5

−

0.5

−

0.5

−

0.2

0.1

−

0.2

0.1

−

0.2

0.1

−

Ta=100°C

−25°C

Ta=100°C

−

0.05

0.02

−

0.05

0.02

−

0.05

0.02

25°C

−25°C

−

0.01

−

0.01

−

0.01

−

−5m

−

0.01

−0.02

−0.05

−

0.1

−

0.2

−

0.5

−1

−2

−

−10

−5m

−0.01

−0.02

−0.05

−0.1

−

0.2

−0.5

−1

−2

−5

−

−0.01

−

0.02

−0.05

−0.1

−0.2

−

0.5

−1

−2

−5

−

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : IC (A)

Fig.8 Collector-emitter saturation

Fig.9 Collector-emitter saturation

voltage vs. collector current (

Fig.7 Collector-emitter saturation

voltage vs. collector current (

)

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2009.12 - Rev.C

2/3

2SB1412

Data Sheet

−

1 000

500

1000

500

lC/lB=50

=25°C

1MHz

=25°C

VCE= −6V

−25°C

25°C

−

I =

200

100

Ta=100°C

200

100

−

0.5

−

0.2

0.1

−

0.05

0.02

−

0.01

−

−0.01

−0.02

−

0.05

−0.1

−0.2

−

0.5

−

−5 −10

−0.1 −0.2 −0.5 −1 −2

−5 −10 −20 −50

10 20

50 100 200 500 1000

COLLECTOR CURRENT : I (A)

EMITTER CURRENT : I

(mA)

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.10 Collector-emitter saturation

voltage vs. collector current (

Fig.11 Gain bandwidth product

vs. emitter current

Fig.12 Collector output capacitance

vs. collector-base voltage

)

1000

500

100

Ta=25°C

1MHz

=25°C

Single

∗

nonrepetitive

pulse

I =

200

100

10ms

500m

200

100

50m

20m

10m

−0.1 −0.2

−0.5

−1

−2

−5

−10

0.2 0.5

10 20 50 100 200 500

EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR TO EMITTER VOLTAGE : −VCE (V)

Fig.13 Emitter input capacitance

vs. emitter-base voltage

Fig.14 Safe operation area

F(2SB1412)

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2009.12 - Rev.C

3/3

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R0039

2SB1412QTL [ROHM]

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