2SC4097T106/Q

更新时间:2024-09-18 13:03:14
品牌:ROHM
描述:500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN

2SC4097T106/Q 概述

500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN 小信号双极晶体管

2SC4097T106/Q 规格参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliant风险等级:5.26
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.4 V
Base Number Matches:1

2SC4097T106/Q 数据手册

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2SC4097  
Transistors  
Medium Power Transistor (32V, 0.5A)  
2SC4097  
zFeatures  
zExternal dimensions (Units : mm)  
1) High ICMax.  
ICMax. = 0.5A  
2SC4097  
2) Low VCE(sat).  
Optimal for low voltage operation.  
3) Complements the 2SA1577.  
2.0 0.2  
0.9 0.1  
0.7 0.1  
1.3 0.1  
0.65 0.65  
(1) (2)  
0.2  
0 ~ 0.1  
(3)  
zStructure  
Epitaxial planar type  
NPN silicon transistor  
All terminals have same dimensions  
+0.1  
0.3  
0.15 0.05  
0  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : UMT3  
EIAJ : SC-70  
Abbreviated symbol : C∗  
Denotes hFE  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
40  
32  
V
5
0.5  
V
I
C
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0.2  
W
°C  
°C  
Tj  
150  
Tstg  
55 to +150  
PC must not be exceeded.  
Rev.A  
1/3  
2SC4097  
Transistors  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
40  
32  
5
I
I
I
C
C
E
=
=
100µA  
1mA  
V
V
=
100µA  
I
CBO  
EBO  
FE  
CE(sat)  
1
µA  
µA  
V
V
V
CB  
EB  
CE  
=
=
=
20V  
4V  
Emitter cutoff current  
I
1
DC current transfer ratio  
h
120  
390  
0.6  
3V, I = 10mA  
C
Collector-emitter saturation voltage  
V
V
I
C
/I  
B
= 500mA/50mA  
f
T
250  
6.5  
MHz  
pF  
V
CE  
CB  
=
=
5V, I  
E
=
20mA, f  
=
100MHz  
Transition frequency  
Output capacitance  
Cob  
V
10V, I  
E
=
0A, f = 1MHz  
zPackaging Specifications and hFE  
Package  
Code  
Taping  
T106  
hFE  
Basic ordering unit (pieces)  
Type  
3000  
2SC4097  
QR  
hFE values are classified as follows:  
Item  
Q
R
h
FE  
120 to 270 180 to 390  
zElectrical characteristic curves  
500  
400  
300  
200  
100  
1000  
100  
Ta=25°C  
Ta=25°C  
VCE  
=6V  
500  
2mA  
1.8mA  
200  
100  
50  
1.6mA  
1.4mA  
1.2mA  
Ta  
=
100°C  
25°C  
55°C  
80°C  
25°C  
20  
10  
5
1.0mA  
50  
0.8mA  
0.6mA  
2
1
0.4mA  
0.5  
0.05mA  
0.2mA  
0A  
0.2  
0.1  
IB=0A  
4
I =  
4
B
0
0
0
0
1
2
3
5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
1
2
3
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
BASE TO EMITTER VOLTAGE : VBE  
(V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.2 Grounded emitter output  
Fig.1 Grounded emitter propagation  
characteristics  
Fig.3 Grounded emitter output  
characteristics ( Ι )  
characteristics( ΙΙ )  
Rev.A  
2/3  
2SC4097  
Transistors  
1000  
500  
500  
1
VCE=3V  
Ta  
=
25°C  
10  
Ta  
VCE  
=
25°C  
lC/l  
B
=
=5V  
0.5  
200  
100  
50  
200  
100  
50  
0.2  
0.1  
C
°
25  
0.05  
20  
10  
0.02  
0.5  
0.1 0.2 0.5  
1
2
5 10 20 50 100 200 500 1000  
1
2
5
10 20  
50 100 200 500 1000  
0.5 1  
2  
5  
10 20  
50  
COLLECTOR CURRENT : I (mA)  
C
COLLECTOR CURRENT : I (mA)  
C
EMITTER CURRENT : IE mA)  
(
Fig.5 DC current gain vs. collector current  
Fig.4 Collector-emitter saturation voltage  
vs. collector current  
Fig. 6 Gain bandwidth product vs.  
emitter current  
Ta=25°C  
50  
f
I
I
=
1MHz  
E
=
0A  
0A  
C
=
20  
10  
5
2
0.5  
1
2
5
10  
20  
50  
V)  
COLLECTOR TO BASE VOLTAGE : VCB  
EMITTER TO BASE VOLTAGE : VEB  
(
(
V)  
Fig.7 Collector output capacitance vs.  
collector-base voltage  
Emitter input capacitance vs.  
emitter-base voltage  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

2SC4097T106/Q 相关器件

型号 制造商 描述 价格 文档
2SC4097T106/QR ROHM 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR 获取价格
2SC4097T106/R ROHM 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN 获取价格
2SC4097T106P ROHM Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN 获取价格
2SC4097T106PQ ROHM Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, 获取价格
2SC4097T106PR ROHM Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, 获取价格
2SC4097T106Q ROHM Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN 获取价格
2SC4097T106QR ROHM Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, 获取价格
2SC4097T106R ROHM Medium Power Transistor (32V, 0.5A) 获取价格
2SC4097T107 ROHM Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon 获取价格
2SC4097T107/R ROHM Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon 获取价格

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