2SC4097T106/Q
更新时间：2024-09-18 13:03:14
品牌：ROHM
描述：500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN
概述
规格参数
数据手册2SC4097T106/Q 概述
500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN 小信号双极晶体管
2SC4097T106/Q 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | SC-70 |
| 包装说明： | SMALL OUTLINE, R-PDSO-G3 | 针数： | 3 |
| Reach Compliance Code： | compliant | 风险等级： | 5.26 |
| 最大集电极电流 (IC)： | 0.5 A | 集电极-发射极最大电压： | 32 V |
| 配置： | SINGLE | 最小直流电流增益 (hFE)： | 120 |
| JESD-30 代码： | R-PDSO-G3 | JESD-609代码： | e1 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | NPN |
| 认证状态： | Not Qualified | 表面贴装： | YES |
| 端子面层： | TIN SILVER COPPER | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 10 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| 标称过渡频率 (fT)： | 250 MHz | VCEsat-Max： | 0.4 V |
| Base Number Matches： | 1 |
2SC4097T106/Q 数据手册
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PDF下载2SC4097
Transistors
Medium Power Transistor (32V, 0.5A)
2SC4097
zFeatures
zExternal dimensions (Units : mm)
1) High ICMax.
ICMax. = 0.5A
2SC4097
2) Low VCE(sat).
Optimal for low voltage operation.
3) Complements the 2SA1577.
2.0 0.2
0.9 0.1
0.7 0.1
1.3 0.1
0.65 0.65
(1) (2)
0.2
0 ~ 0.1
(3)
zStructure
Epitaxial planar type
NPN silicon transistor
All terminals have same dimensions
+0.1
0.3
0.15 0.05
−0
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Abbreviated symbol : C∗
Denotes hFE
∗
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
40
32
V
5
0.5
V
∗
I
C
A
Collector power dissipation
Junction temperature
Storage temperature
P
C
0.2
W
°C
°C
Tj
150
Tstg
−55 to +150
∗
PC must not be exceeded.
Rev.A
1/3
2SC4097
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
40
32
5
I
I
I
C
C
E
=
=
100µA
1mA
−
−
V
−
−
V
=
100µA
I
CBO
EBO
FE
CE(sat)
−
−
1
µA
µA
−
V
V
V
CB
EB
CE
=
=
=
20V
4V
Emitter cutoff current
I
−
−
1
DC current transfer ratio
h
120
−
−
390
0.6
−
3V, I = 10mA
C
Collector-emitter saturation voltage
V
−
V
I
C
/I
B
= 500mA/50mA
f
T
−
250
6.5
MHz
pF
V
CE
CB
=
=
5V, I
E
=
−20mA, f
=
100MHz
Transition frequency
Output capacitance
Cob
−
−
V
10V, I
E
=
0A, f = 1MHz
zPackaging Specifications and hFE
Package
Code
Taping
T106
hFE
Basic ordering unit (pieces)
Type
3000
2SC4097
QR
hFE values are classified as follows:
Item
Q
R
h
FE
120 to 270 180 to 390
zElectrical characteristic curves
500
400
300
200
100
1000
100
Ta=25°C
Ta=25°C
VCE
=6V
500
2mA
1.8mA
200
100
50
1.6mA
1.4mA
1.2mA
Ta
=
100°C
−25°C
−55°C
80°C
25°C
20
10
5
1.0mA
50
0.8mA
0.6mA
2
1
0.4mA
0.5
0.05mA
0.2mA
0A
0.2
0.1
IB=0A
4
I =
4
B
0
0
0
0
1
2
3
5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1
2
3
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
Fig.3 Grounded emitter output
characteristics ( Ι )
characteristics( ΙΙ )
Rev.A
2/3
2SC4097
Transistors
1000
500
500
1
VCE=3V
Ta
=
25°C
10
Ta
VCE
=
25°C
lC/l
B
=
=5V
0.5
200
100
50
200
100
50
0.2
0.1
C
°
25
0.05
20
10
0.02
0.5
0.1 0.2 0.5
1
2
5 10 20 50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
−0.5 −1
−2
−5
−10 −20
−50
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I (mA)
C
EMITTER CURRENT : IE mA)
(
Fig.5 DC current gain vs. collector current
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig. 6 Gain bandwidth product vs.
emitter current
Ta=25°C
50
f
I
I
=
1MHz
E
=
0A
0A
C
=
20
10
5
2
0.5
1
2
5
10
20
50
V)
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
(
V)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
2SC4097T106/Q 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SC4097T106/QR | ROHM | 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | 获取价格 |
|
| 2SC4097T106/R | ROHM | 500mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN | 获取价格 |
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| 2SC4097T106P | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN | 获取价格 |
|
| 2SC4097T106PQ | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
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| 2SC4097T106PR | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
|
| 2SC4097T106Q | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN | 获取价格 |
|
| 2SC4097T106QR | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
|
| 2SC4097T106R | ROHM | Medium Power Transistor (32V, 0.5A) | 获取价格 |
|
| 2SC4097T107 | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
|
| 2SC4097T107/R | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
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