2SC4102T106/R [ROHM]
50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN;
| 型号： | 2SC4102T106/R |
| 厂家： | 
ROHM |
| 描述： | 50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High-voltage Amplifier Transistor (120V, 50mA)
2SC4102 / 2SC3906K
Features
Dimensions (Unit : mm)
1) High breakdown voltage. (BVCEO = 120V)
2) Complements the 2SA1579 / 2SA1514K
2SC4102
1.25
2.1
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
120
120
V
0.1Min.
5
50
V
Each lead has same dimensions
I
C
mA
W
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
Collector power dissipation
Junction temperature
Storage temperature
P
C
0.2
Tj
150
°C
°C
Tstg
−55 to +150
2SC3906K
Packaging specifications and hFE
1.6
Type
2SC4102
UMT3
RS
2SC3906K
2.8
Package
SMT3
hFE
RS
Marking
Code
T
∗
T∗
0.3Min.
T106
3000
T146
Each lead has same dimensions
Basic ordering unit (pieces)
3000
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
Denotes hFE
∗
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
BVCBO
BVCEO
BVEBO
Min.
120
120
5
Typ.
−
−
−
−
−
−
−
140
2.5
Max.
−
−
Unit
V
Conditions
I
I
I
C
=50μA
=1mA
V
C
−
V
E
=50μA
CB=100V
EB=4V
I
CBO
EBO
CE(sat)
FE
−
−
−
180
−
0.5
0.5
0.5
560
−
μA
μA
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
V
I
C/I
B
=10mA/1mA
h
−
MHz
pF
V
V
V
CE=6V, I
CE=12V, I
CB=12V, I
C
=2mA
=−2mA, f=100MHz
=0A, f=1MHz
Transition frequency
f
T
E
E
Output capacitance
Cob
−
−
www.rohm.com
2012.01 - Rev.B
1/2
c
○ 2012 ROHM Co., Ltd. All rights reserved.
2SC4102 / 2SC3906K
Data Sheet
Electrical characteristics curves
10
50
Ta=25°C
25.0
Ta
VCE=6V
=
25°C
22.5
5V
20
10
500
8
20.0
3V
17.5
5
6
200
100
15.0
V
CE=
1V
12.5
2
1
4
10.0
7.5
0.5
5.0
2.5
50
2
0
0.2
0.1
I
B
=0μA
4
Ta
16
=
25°C
20
0.2
0.5
1
2
5
10 20
50
8
12
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 DC current gain vs. collector current
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
V
Ta
CE
=
6V
IC/IB=10
°C
Ta
=
25
=
25
°C
0.5
0.5
500
0.2
0.1
0.2
0.1
Ta
=
100
°C
200
100
IC/IB=50
25°C
−40°C
0.05
0.05
20
10
50
0.02
0.021
2
5
10
COLLECTOR CURRENT : I
20
50
1
2
5
10
20
50
−0.5
−1
−2
−5
−10 −20
−50
COLLECTOR CURRENT : I
E
(mA)
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.6 Gain bandwidth product vs. emitter current
Fig.4 Collector-emitter saturation voltage
vs. collector current (
Fig.5 Collector-emitter saturation voltage
vs. collector current (
)
)
Ta
=
25°C
1MHz
0A
Ta
1MHz
0A
=25°C
f
=
f=
20
10
20
10
I
E
=
IC=
5
5
2
1
2
1
−0.5
1
2
5
10
20
−0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.8 Emitter input capacitance
vs. emitter-base voltage
www.rohm.com
2012.01 - Rev.B
2/2
c
○ 2012 ROHM Co., Ltd. All rights reserved.
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