2SC4672T100Q [ROHM]
Low Frequency Transistor (50V, 3A); 低频晶体管（ 50V ， 3A ）
| 型号： | 2SC4672T100Q |
| 厂家： | 
ROHM |
| 描述： | Low Frequency Transistor (50V, 3A) |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4672
Transistors
Low Frequency Transistor (50V, 3A)
2SC4672
zFeatures
1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SA1797.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
60
50
6
V
V
V
3
A (DC)
Collector current
IC
6
A (Pulse) ∗1
0.5
2
Collector power dissipation
PC
W
∗2
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
∗1 Single pulse, Pw=10ms
t
∗2 40×40×
0.7mm Ceramic board
zPackaging specifications and hFE
Type
2SC4672
MPT3
PQ
Package
hFE
∗
Marking
Code
Basic ordering unit (pieces)
DK
T100
1000
∗
Denotes hFE
hFE values are classified as follows:
Item
P
Q
hFE
82 to 180 120 to 270
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
60
50
6
−
−
−
−
−
0.13
−
−
−
0.1
0.1
0.35
270
−
V
V
I
I
I
C
=50µA
=1mA
C
V
E
=50µA
CB=60V
EB=5V
I
CBO
EBO
CE(sat)
−
−
−
82
µA
µA
V
V
V
Emitter cutoff current
I
∗
∗
∗
Collector-emitter saturation voltage
V
IC/IB=1A/50mA
h
FE
FE
1
2
−
−
210
25
−
−
MHz
pF
V
V
V
V
CE=2V, I
CE=2V, I
CE=2V, I
C
=0.5A
=1.5A
DC current transfer ratio
h
45
−
−
C
Transition frequency
Output capacitance
f
T
−
−
E=−0.5A, f=100MHz
Cob
CB=10V, I
E=0A, f=1MHz
∗Measured using pulse current.
Rev.C
1/2
2SC4672
Transistors
zElectrical characteristics curves
5000
1
10
V
CE=2V
V
CE= −2V
I
C/I
B
=20
5
2000
1000
Ta=25°C
0.5
2
1
Ta=100°C
0.5
500
Ta=25°C
0.2
0.1
Ta=100°C
Ta=25°C
0.2
0.1
Ta=100°C
200
100
Ta= −40°C
0.05
Ta= −40°C
Ta= −40°C
50
0.05
0.02
0.01
5m
20
10
0.02
0.01
2m
1m
5
1m 2m 5m 0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m 2m
5m 0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
COLLECTOR CURRENT : I (A)
C
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I (A)
C
Fig.2 DC current gain vs. collector current
Fig.1 Grounded emitter propagation
characteristics
Fig.3 Collector-emitter saturation
voltage vs. collector current
10
∗
Ic Max. (Pulse
)
∗
Pw=1ms
Pw=10ms
Pw=100ms
5
∗
2
1
∗
500m
200m
DC
100m
50m
20m
10m
Ta=25°C
5m
2m
∗
Single
NONREPETITIVE
PULSE
1m
0.1
0.2
0.5
1
2
5
10
20 50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.4 Safe Operating area
Rev.C
2/2
Appendix
Notes
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
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Appendix1-Rev2.0
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