2SC4725TR/NP [ROHM]

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,;
2SC4725TR/NP
型号: 2SC4725TR/NP
厂家: ROHM    ROHM
描述:

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 光电二极管
文件: 总2页 (文件大小:72K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K  
Transistors  
High-Frequency Amplifier Transistor  
(18V, 50mA, 1.5GHz)  
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K  
!External dimensions (Units : mm)  
!Features  
1) High transition frequency. (Typ. fT = 1.5GHz)  
2) Small rbb’Ccand high gain. (Typ. 6ps)  
3) Small NF.  
2SC5661  
1.2  
0.2 0.8 0.2  
( )  
2
(3)  
( )  
1
(1) Base  
0.15Max.  
(2) Emitter  
(3) Collector  
ROHM : VMT3  
2SC4725  
! Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
30  
Unit  
V
Collector-base voltage  
V
V
V
CBO  
CEO  
EBO  
( )  
1
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
18  
V
( )  
2
( )  
3
3
V
I
C
50  
mA  
0.8  
1.6  
2SC5661, 2SC4725  
2SC4082, 2SC3837K  
0.15  
0.2  
Collector power  
dissipation  
P
C
W
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
(1) Emitter  
(2) Base  
(3) Collector  
Tstg  
55~+150  
ROHM : EMT3  
EIAJ : SC-75A  
0.1Min.  
2SC4082  
!Packaging specifications and hFE  
Type  
2SC4725  
EMT3  
NP  
2SC4082  
UMT3  
NP  
2SC3837K  
SMT3  
2SC5661  
VMT3  
NP  
1.25  
2.1  
Package  
hFE  
NP  
(1) Emitter  
(2) Base  
(3) Collector  
Marking  
Code  
AC  
1C  
AC  
AC  
TL  
T106  
T146  
T2L  
Basic ordering unit  
(pieces)  
ROHM : UMT3  
EIAJ : SC-70  
8000  
3000  
3000  
3000  
0.1to0.4  
Each lead has same dimensions  
Denotes hFE  
2SC3837K  
1.6  
2.8  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
0.3to0.6  
Each lead has same dimensions  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
30  
18  
3
V
V
I
I
I
C
C
=
=
=
10µA  
1mA  
V
E
10µA  
I
CBO  
EBO  
CE(sat)  
FE  
56  
600  
0.5  
0.5  
0.5  
180  
1.5  
13  
µA  
µA  
V
V
CB  
EB  
=
=
10V  
Emitter cutoff current  
I
V
2V  
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
=
20mA/4mA  
h
V
V
V
V
V
CE/I  
C
= 10V/10mA  
f
T
1500  
0.9  
6
MHz  
pF  
ps  
dB  
CB  
CB  
CB  
CE  
=
=
=
=
10V , I  
10V , I  
10V , I  
12V , I  
C
E
C
C
=
=
=
=
10mA , f  
0A , f 1MHz  
10mA , f 31.8MHz  
2mA , f 200MHz , Rg = 50Ω  
= 200MHz  
Transition frequency  
Output capacitance  
Collector-base time constant  
Noise factor  
Cob  
rbb'·Cc  
NF  
=
=
4.5  
=
1/1  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document use silicon as a basic material.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.0  

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