2SC5053T100R 概述
Medium power transistor (50V, 1A) 中等功率晶体管( 50V , 1A ) 小信号双极晶体管
2SC5053T100R 规格参数
是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 8.59 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 180 | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 功耗环境最大值: | 2 W |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN COPPER | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | VCEsat-Max: | 0.4 V |
Base Number Matches: | 1 |
2SC5053T100R 数据手册
通过下载2SC5053T100R数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2SC5053
Transistors
Medium power transistor (50V, 1A)
2SC5053
zFeatures
zDimensions (Unit : mm)
1) Low saturation voltage, typically VCE(sat)=0.12V at IC/
IB=500mA/50mA
MPT3
2) PC=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SA1900
(1)Base
(2)Collector
(3)Emitter
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VCBO
VCEO
VEBO
60
V
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
50
V
5
V
1
A
Collector current
IC
2
A (Pulse) ∗1
0.5
W
Collector power dissipation
PC
2
150
W
°C
°C
∗2
Collector power dissipation
Storage temperature
tj
t
stg
−55 to +150
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40+ 40+ 0.7mm seramic board.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
60
50
5
−
−
−
−
−
−
−
150
15
−
−
−
0.1
0.1
0.4
390
−
V
V
I
I
I
C
C
=50µA
=1mA
V
E
=50µA
CB=40V
EB=4V
BVEBO
I
CBO
EBO
CE(sat)
FE
−
−
−
120
−
µA
µA
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
I
C
/I
B
=500mA/50mA
=3V/0.5A
CE=5V , I =−50mA , f=100MHz
CB=10V , I =0A , f=1MHz
V
h
−
MHz
pF
V
V
V
CE/IC
f
T
Transition frequency
E
Output capacitance
Cob
−
−
E
zPackaging specifications and hFE
Type
Package
hFE
2SC5053
MPT3
QR
∗
CG
Marking
Code
T100
1000
Basic ordering unit (pleces)
∗ Denotes
hFE
Rev.D
1/2
2SC5053
Transistors
zElectric characteristics curves
1000
500
1000
500
1000
9mA
10mA
900
Ta=25°C
Ta=25°C
IC/IB=10
800
700
600
500
400
V
CE=3V
200
200
100
50
100
50
20
10
20
10
300
200
5
5
2
1
2
1
100
0
1m
10m
100m
1
2
0.001
0.005
0.02 0.05 0.1 0.2 0.5
0.01
1
2
0
1
2
3
4
5
0.002
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs.collector current
Fig.1 Grounded emitter output characteristics
Fig.2 DC current gain
vs. collector current
5
1000
Ta=25°C
Ta=25°C
200
100
f=1MHz
V
CE=5V
∗
I
C Max. (Pulse
)
500
IE=0A
2
1
10ms
100ms
200
100
50
50
20
0.5
0.2
0.1
DC
20
10
5
10
5
0.05
2
1
Ta=25°C
0.02
0.01
2
1
∗
Single
nonrepeatitive pulse
0.5
0.1
0.2
0.5
1
2
5
10
20
0.2
1
2
5
10 20
50 100
−1m
−10m
−0.1
−1
COLLECTOR TO EMITTER VOLTAGE : ICE (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER CURRENT : I
E
(A)
Fig.6 Safe operating area
Fig.5 Collector output capacitance
vs. collector-base voltage
Fig.4 Gain bandwith product
vs. emitter current
Rev.D
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
THE AMERICAS / EUROPE / ASIA / JAPAN
ROHM Customer Support System
Contact us : webmaster@ rohm.co.jp
www.rohm.com
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Copyright © 2008 ROHM CO.,LTD.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
Appendix1-Rev2.0
2SC5053T100R 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
2SC5053T101 | ROHM | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 | |
2SC5053T101/P | ROHM | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 | |
2SC5053T101/PQ | ROHM | Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | 获取价格 | |
2SC5053T101/R | ROHM | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 | |
2SC5053T101P | ROHM | 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | 获取价格 | |
2SC5053T101Q | ROHM | 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | 获取价格 | |
2SC5053T101R | ROHM | 1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | 获取价格 | |
2SC5053_REV2008 | ROHM | Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA | 获取价格 | |
2SC5057 | ETC | 获取价格 | ||
2SC5058 | ETC | TRANSISTOR | BJT | NPN | 900V V(BR)CEO | 12A I(C) | TO-247VAR | 获取价格 |
2SC5053T100R 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6