2SC5060 [ROHM]
Power transistor (90【10V, 3A); 功率晶体管（ 90 ± 10V ， 3A）
| 型号： | 2SC5060 |
| 厂家： | 
ROHM |
| 描述： | Power transistor (90【10V, 3A) |
| 文件： | 总1页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5060
Transistors
Power transistor (90 10V, 3A)
2SC5060
!External dimensions (Units : mm)
!Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L”
loads.
2.5
6.8
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
0.65Max.
0.5
( )
( ) ( )
1
2 3
2.54 2.54
1.05
Taping specifications
(1) Emitter
0.45
!Equivalent circuit
ROHM : ATV
C
(2) Collector
(3) Base
B
R1
R2
E
B : Base
C : Collector
E : Emitter
R
R
1
2
3kΩ
1kΩ
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
90 10
90 10
6
V
V
V
Collector-emitter voltage
Emitter-base voltage
I
C
1
2
1
A(DC)
A(Pulse)
W
°C
°C
Collector current
∗1
∗2
I
CP
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=10ms
PC
Tj
Tstg
150
−55~+150
∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2.
!Packaging specifications and hFE
Type
Package
2SC5060
ATV
hFE
Code
M
TV2
Basic ordering unit (pieces)
2500
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
BVCBO
BVCEO
80
80
−
−
−
−
−
−
−
−
80
20
0.2
5
100
100
10
3
2500
1.5
2
−
−
−
−
V
V
µA
mA
−
I
C
=50µA
=1mA
I
C
I
I
CBO
EBO
FE
V
V
V
CB=70V
EB=5V
CE=3V, IC=0.5A
/I
−
∗1
h
1000
−
−
−
−
−
−
−
V
V
CE(sat)
BE(sat)
V
V
I
I
C
B
=500mA/1mA
=500mA/1mA
∗1
∗2
C
/I
B
f
T
MHz
pF
µs
µs
µs
V
CB=5V, I
CE=10V, I
=0.8A, R
B1=−IB2=8mA
CC 40V
E
=−0.1A, f=30MHz
=0A, f=1MHz
=50Ω
Cob
V
E
t
on
I
I
C
L
t
stg
V
t
f
0.6
−
∗1 Measured using pulse current. ∗2 Transition frequency of the device.
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