2SC5585E3 (新产品) [ROHM]
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.;
| 型号： | 2SC5585E3 (新产品) |
| 厂家： | 
ROHM |
| 描述： | Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zExternal dimensions (Unit : mm)
zApplications
For switching
For muting
2SC5585
( )
1
( )
2
( )
3
0.8
1.6
zFeatures
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA
Abbreviated symbol : BX
2SC5663
1.2
0.2 0.8 0.2
( )
2
(3)
( )
1
0.15Max.
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Abbreviated symbol : BX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Collectot-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
15
12
V
6
V
I
C
500
mA
A
Collector current
I
CP
1
150
∗
Collector power dissipation
P
C
mW
°C
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
∗
Single pulse Pw = 1ms
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
BVCBO
15
12
6
−
−
I
I
I
C
C
E
= 10µA
Collectoe-emitter brakdown voltage BVCEO
−
V
= 1mA
= 10µA
CB = 15V
CB = 6V
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
CBO
−
−
V
I
−
−
100
100
250
680
−
nA
nA
mV
−
V
V
Emitter cutoff current
I
EBO
CE(sat)
FE
−
−
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
−
90
−
I
C
= 200mA, I
B
= 10mA
= 10mA
= −10mA, f = 100MHz
= 0A, f = 1MHz
h
V
V
V
CE = 2V, I
C
270
−
f
T
320
7.5
MHz
pF
CE = 2V, I
E
Output capacitance
Cob
−
−
CB = 10V, I
E
Rev.B
1/2
2SC5585 / 2SC5663
Transistors
zPackaging specifications
Package
Taping
Code
Basic ordering
unit (pieces)
TL
T2L
8000
−
hFE
3000
Type
2SC5585
2SC5663
−
zElectrical characteristic curves
1000
1000
1000
V
CE = 2V
V
CE = 2V
I
C/
I
B
= 20
Ta = 125°C
500
500
500
25°C
-40°C
200
100
50
200
100
50
200
100
50
Ta = 125°C
25°C
-40°C
20
20
10
5
20
10
5
10
5
2
1
2
1
2
1
1
2
5
10
20
50
100 200
500 1000
0
0.5
1.0
1.5
1
2
5
10
20
50
100 200
500 1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Collector-emitter saturation voltage
Fig.2 DC current gain vs.
collector current
Fig.1 Grounded emitter propagation
characteristics
vs. collector current ( Ι )
1000
10000
1000
Ta = 25°C
I
C/IB = 20
500
500
5000
VCE = 2V
Ta = -40°C
Ta = 25°C
Pulsed
25°C
125°C
200
100
50
2000
1000
500
200
100
50
I
C/
I
B
=
50
20
20
10
20
10
5
200
100
50
10
5
2
1
2
1
20
10
500 1000
1
2
5
10
20
50
100 200
500 1000
1
2
5
10
20
50 100 200
1
2
5
10
20
50
100 200
500 1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
Emitter input capacitance
vs. base voltage
Fig.4 Collector-emitter saturation voltage
Fig.5 Base-emitter saturation voltage
vs. collector current
vs. collector current ( ΙΙ )
1000
I
f
E
=
=
0A
1MHz
500
Ta = 25°C
200
100
50
Cib
20
10
Cob
5
2
1
50
100
0.2
0.5
1
2
5
10
20
0.1
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
2SC5585HT2L
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN
ROHM
2SC5586
Power Bipolar Transistor, 5A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
SANKEN
2SC5587
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
TOSHIBA
2SC5588
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)
TOSHIBA
2SC5589
NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
TOSHIBA
2SC5590
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)
TOSHIBA
©2020 ICPDF网 联系我们和版权申明