2SC5874S [ROHM]

Medium power transistor (30V, 1.0A); 中等功率晶体管( 30V , 1.0A )
2SC5874S
型号: 2SC5874S
厂家: ROHM    ROHM
描述:

Medium power transistor (30V, 1.0A)
中等功率晶体管( 30V , 1.0A )

晶体 晶体管
文件: 总4页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC5874S  
Transistors  
Medium power transistor (30V, 1.0A)  
2SC5874S  
!External dimensions (Unit : mm)  
!Features  
1) High speed switching.  
(Tf : Typ. : 35ns at IC = 1.0A)  
2) Low saturation voltage, typically  
4.0  
2.0  
SPT  
0.45  
2.5  
:
(Typ. 150mV at IC = 1.0A, IB = 100mA)  
3) Strong discharge power for inductive load and  
capacitance load.  
0.5  
0.45  
5.0  
(1) Emitter  
(2) Collector  
(3) Base  
4) Complements the 2SA2086S  
Taping specifications  
(1) (2) (3)  
Symbol : C5874S  
!Applications  
Small signal low frequency amplifier  
High speed switching  
!Structure  
NPN Silicon epitaxial planar transistor  
!Packaging specifications  
Package  
Taping  
TP  
Code  
Type  
Basic ordering unit (pieces)  
5000  
2SC5874S  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
30  
Unit  
V
VCBO  
VCEO  
VEBO  
V
30  
V
6
DC  
Collector current  
I
C
A
1.0  
2.0  
300  
150  
1  
2  
Pulsed  
I
CP  
A
P
C
mW  
°C  
°C  
Power dissipation  
Tj  
Junction temperature  
Range of storage temperature  
Tstg  
55 to 150  
1 Pw=10ms  
2 Each terminal mounted on a recommended land  
1/3  
2SC5874S  
Transistors  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
30  
30  
6
Typ.  
Max.  
1.0  
Unit  
V
Condition  
=1mA  
=100µA  
=100µA  
CB=20V  
EB=4V  
BVCEO  
BVCBO  
BVEBO  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
I
I
I
C
C
V
V
E
I
CBO  
µA  
µA  
V
V
I
EBO  
1.0  
Emitter cut-off current  
I
I
C
=500mA  
=50mA  
CE=2V  
V
CE (sat)  
300  
390  
mV  
Collector-emitter saturation voltage  
DC current gain  
150  
B
V
hFE  
120  
I
C=100mA  
1  
VCE=10V  
f
T
MHz  
pF  
Transition frequency  
250  
10  
I
E
= −100mA  
f=10MHz  
CB=10V  
=0mA  
f=1MHz  
V
Cob  
Corrector output capacitance  
IE  
2  
I
I
I
C
=1.0A  
Ton  
Tstg  
Tf  
ns  
ns  
ns  
Turn-on time  
Storage time  
Fall time  
30  
120  
35  
BB21= −100mA  
=100mA  
V
CC 25V  
1 Non repetitive pulse  
2 See Switching charactaristics measurement circuits  
!hFE RANK  
Q
R
120270  
180390  
!Electrical characteristic curves  
1000  
100  
10  
1000  
10  
Ta=25°C  
VCE=2V  
VCC=25V  
IC / IB=10 / 1  
Tstg  
1
100ms  
10ms  
1ms  
Ta=100°C  
Ta=25°C  
Ta= −40°C  
0.1  
100  
Tf  
Ton  
DC  
0.01  
Single  
non repetitive  
Pulsed  
0.1  
1
10  
0.01  
0.001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
1
10  
100  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.2 Switching Time  
Fig.3 DC Current Gain vs.  
Fig.1 Safe Operating Area  
Collector Current (Ι)  
1000  
100  
10  
10  
10  
Ta=25°C  
Ta=25°C  
IC / IB=10 / 1  
1
0.1  
1
0.1  
VCE=5V  
VCE=3V  
VCE=2V  
Ta=100°C  
Ta=25°C  
Ta= −40°C  
I
I
C
C
/ I  
/ I  
B
B
=20 / 1  
=10 / 1  
1
0.01  
0.01  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.5 Collector-Emitter Saturation  
Voltage vs. Collector Current (Ι)  
Fig.4 DC Current Gain vs.  
Fig.6 Collector-Emitter Saturation  
Collector Current (ΙΙ)  
Voltage vs. Collector Current (ΙΙ)  
2/3  
2SC5874S  
Transistors  
1000  
100  
10  
10  
10  
1
Ta=25°C  
I
C
/ I  
B
=10 / 1  
VCE=2V  
V
CE=10V  
Ta=100°C  
Ta=25°C  
1
Ta= −40°C  
0.1  
0.01  
Ta=100°C  
Ta=25°C  
Ta= −40°C  
0.1  
1
0.001  
0.01  
0.1  
1
10  
0
0.5  
1
1.5  
0.001  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : I  
C
(A)  
BASE TO EMITTER VOLTAGE : VBE (V)  
EMITTER CURRENT : IE (A)  
Fig.7 Base-Emitter Saturation  
Voltage vs. Collecter Current  
Fig.8 Grounded Emitter  
Fig.9 Transition Frequency : fT  
Propagation Characteristics  
100  
Ta=25°C  
f=1MHz  
10  
1
0.1  
1
10  
100  
BASE TO COLLECTOR VOLTAGE : VCB (V)  
Fig.10 Collector Output Capacitance : Cob  
!Switching characteristics measurement circuits  
RL=50Ω  
V
IN  
I
I
B1  
B2  
I
C
VCC 25V  
P
W
P
W
50 S  
Duty cycle 1%  
I
B1  
I
B2  
Base current  
waveform  
90%  
I
C
Collector current  
waveform  
10%  
Ton  
Tstg Tf  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document use silicon as a basic material.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.0  

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