2SCR513P [ROHM]
Midium Power Transistors (50V / 1A); 煤层炮功率晶体管（ 50V / 1A ）
| 型号： | 2SCR513P |
| 厂家： | 
ROHM |
| 描述： | Midium Power Transistors (50V / 1A) |
| 文件： | 总5页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Midium Power Transistors (50V / 1A)
2SCR513P
Structure
Dimensions (Unit : mm)
NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)
(1)
(2) (3)
2) High speed switching
Applications
Abbreviated symbol : NC
Driver
Packaging specifications
Inner circuit (Unit : mm)
Package
Taping
T100
(2)
Type
Code
Basic ordering unit (pieces) 1000
2SCR513P
(1)
Absolute maximum ratings (Ta = 25C)
(1) Base
(2) Collector
(3) Emitter
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
50
(3)
50
V
6
V
DC
1
A
Collector current
*1
Pulsed
ICP
PD
PD
Tj
2
0.5
A
*2
*3
W
W
C
C
Power dissipation
2
Junction temperature
150
Range of storage temperature
Tstg
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
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2009.12 - Rev.A
1/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SCR513P
Data Sheet
Electrical characteristic (Ta = 25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Min.
50
50
6
Typ.
Max.
Unit
V
Conditions
IC= 1ｍA
-
-
-
IC= 100μA
IE= 100μA
-
V
-
-
V
V
CB= 50V
EB= 4V
-
-
1
A
A
mV
-
IEBO
V
Emitter cut-off current
-
-
130
-
1
*1
VCE(sat)
hFE
IC= 500mA, IB= 25mA
CE= 2V, IC= 50mA
Collector-emitter staturation voltage
DC current gain
-
350
450
V
180
VCE= 10V
*1
fT
Transition frequency
-
-
360
7
-
-
MHz
pF
IE=-200mA, f=100MHz
VCB= 10V, IE=0A
Cob
t
Collector output capacitance
f=1MHｚ
Turn-on time
Storage time
Fall time
-
-
-
40
410
75
-
-
-
ns
ns
ns
on *2
IC= 0.5A,IB1= 50mA,
t
stg *2
IB2=-50mA,VCC 10V
~_
tf
*2
*1 Pulsed
*2 See switching time test circuit
www.rohm.com
2009.12 - Rev.A
2/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SCR513P
Data Sheet
Electrical characteristic curves
4mA
5mA
2.5mA
3.0mA
1000
100
10
1000
100
10
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
VCE=2V
Ta=25°C
2.0mA
1.5mA
1.0mA
VCE=5V
2V
Ta=125°C
75°C
25°C
-40°C
0.5mA
Ta=25°C
1
10
100
1000
[mA]
10000
1
10
100
1000
[mA]
10000
0
0.5
1
1.5
2
COLLECTOR CURRENT : I
C
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.1 Typical Output Characteristics
COLLECTOR CURRENT : I
C
Fig3. DC Current Gain vs.
Fig.2 DC Current Gain vs.
Collector Current ( ΙΙ )
Collector Current ( Ι )
1
0.1
1
0.1
10000
1000
100
10
IC/IB=20
Ta=25°C
V
CE=2V
Ta=125°C
75°C
25°C
-40°C
Ta=125°C
75°C
IC
/IB
=50
20
10
0.01
0.001
0.01
0.001
25°C
-40°C
1
1
10
100
1000
[mA]
10000
1
10
100
1000
10000
0
0.5
1
1.5
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
[mA]
BASE TO EMITTER VOLTAGE :VBE[V]
Fig.5 Collector-Emitter Saturation Voltage
Fig.4 Collector-Emitter Saturation Voltage
Fig.6 Ground Emitter Propagation
Characteristics
vs. Collector Current ( ΙΙ )
vs. Collector Current ( Ι )
1000
100
10
1000
100
10
10
1
Ta=25°C
Ta=25°C
f=1MHz
Single pulse
V
CE=10V
1ms
IE
=0A
10ms
IC
=0A
Cib
100ms
DC Ta=25°C
0.1
0.01
(Mounted on a
recommended land)
Cob
DC Ta=25°C
(Mounted on a ceramic board)
1
10
100
EMITTER CURRENT : IE[mA]
1000
0.1
1
10
100
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
Fig.8 Gain BandwidthProduct vs.
Emitter Current
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
www.rohm.com
2009.12 - Rev.A
3/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SCR513P
Data Sheet
Switching time test circuit
RL=20Ω
IB1
VIN
IC
_
VCC 10V
~
IB2
~_
Pw 50μs
Pw
DUTY CYCLE1%
IB1
BASE CURENT WAVEFORM
IB2
ton
tstg
tf
90%
IC
COLLECTOR CURRENT
WAVEFORM
10%
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2009.12 - Rev.A
4/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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