2SCR514PT100
更新时间：2024-09-18 17:01:56
品牌：ROHM
描述：Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MPT3, 3 PIN
概述
规格参数
数据手册
替代型号2SCR514PT100 概述
Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MPT3, 3 PIN 双极性晶体管 小信号双极晶体管
2SCR514PT100 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Not Recommended | 包装说明： | SMALL OUTLINE, R-PSSO-F3 |
| 针数： | 3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | 风险等级： | 7.9 |
| 外壳连接： | COLLECTOR | 最大集电极电流 (IC)： | 0.7 A |
| 集电极-发射极最大电压： | 80 V | 配置： | SINGLE |
| 最小直流电流增益 (hFE)： | 120 | JESD-30 代码： | R-PSSO-F3 |
| JESD-609代码： | e2 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | NPN |
| 最大功率耗散 (Abs)： | 2 W | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | YES |
| 端子面层： | TIN COPPER | 端子形式： | FLAT |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | 10 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| 标称过渡频率 (fT)： | 320 MHz | Base Number Matches： | 1 |
2SCR514PT100 数据手册
通过下载2SCR514PT100数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2SCR514P
Middle Power Transistors (80V / 700mA)
Datasheet
llOutline
SOT-89
ꢀ
ꢀ
ꢀ
Parameter
Value
80V
0.7A
SC-62
ꢀ
V
CEO
ꢀ
I
C
MPT3
llFeatures
1)Low saturation voltage, typically
ꢀV =300mV (Max.)
llInner circut
CE(sat)
ꢀ (I /I =300mA/15mA)
C B
2)High speed switching
llApplication
LOW FREQUENCYAMPLIFIR, HIGH SPEED SWIHING
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llPackaging spations
Basic
Package
size
Taping Reel size Tape width
Part .
Packe
ordering
Marking
ND
code
(mm)
(mm)
unit.(pcs)
SOT-89
(MPT3)
2SCR514P
4540
T100
180
12
1000
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
1/6
20150731 - Rev.002
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2SCR514P
ꢀ ꢀ ꢀ ꢀꢀ
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
80
80
V
6
0.7
V
A
Collector current
Power dissipation
*1
ICP
1.4
A
*2
PD
0.5
W
W
℃
℃
*3
PD
2.
Tj
Junction temperature
150
Tstg
Range of storage temperature
-o +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
I = 100μA
Unit
Min.
80
Typ.
Max.
-
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
BVCBO
BVCEO
-
V
V
C
I = 1mA
C
0
-
-
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I = 10μA
6
-
-
V
μA
μA
mV
-
E
V
CB
V
EB
80V
= 4V
-
-
1.0
1.0
300
390
IEBO
-
-
-
100
-
Collector-emitter saturation voltage
DC current gain
V
I = 300mA, = 15mA
C
CE(sa
V
CE
= = 100mA
120
V
= 10, I = -200mA,
E
CE
f
Transition frequency
Output capacitan
Turn-On time
-
-
-
-
-
320
6
-
-
-
-
-
MHz
pF
ns
T
f = 100MHz
V
CB
= 10V, I = 0A,
E
Cob
ton
tstg
tf
f = 1MHz
I = 350mA,
C
50
I
I
= 35mA,
= -35mA,
⋍ 10V,
B1
B2
Storage
650
100
ns
V
CC
R = 27Ω
See test circuit
L
all time
ns
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*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
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ꢀ
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/6
20150731 - Rev.002
ꢀ ꢀ ꢀ
2SCR514P
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.1 Ground Emitter Propagation
Fig.2 Typical Output Characteristics
ꢀꢀꢀꢀCharacteristics
Fig.3 DC Current Gain vs. Cotor
ig.4 DC Current Gain vs. Collector
ꢀꢀꢀꢀCurrent (I)
ꢀꢀꢀꢀCurrent (II)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/6
20150731 - Rev.002
ꢀ ꢀ ꢀ
2SCR514P
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.5 Collector-Emitter Saturation
Fig.6 Collector-Emitter Saturation
ꢀꢀꢀꢀVoltage vs. Collector Current (I)
ꢀꢀꢀꢀVoltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation ltage
ig.8 Gain Bandwidth Product vs.
ꢀꢀꢀꢀvs. Collector Current
ꢀꢀꢀꢀEmitter Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/6
20150731 - Rev.002
ꢀ ꢀ ꢀ
2SCR514P
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.9 Emitter Input Capacitance vs.
ꢀꢀꢀꢀEmitter-Base Voltage
Fig.10 Safe Operating Area
ꢀꢀꢀ Collector Output Capacitance vs.
ꢀꢀꢀ Collector-Base Voltage
SWITHING TIME TESCIRCUIT
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/6
20150731 - Rev.002
2SCR514P
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/6
20150731 - Rev.002
2SCR514PT100 CAD模型
引脚图
封装焊盘图
2SCR514PT100 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 2SCR533PT100 | ROHM | NPN 3.0A 50V Middle Power Transistor | 类似代替 |
|
| 2SCR552PT100 | ROHM | Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | 类似代替 |
|
| 2SCR513PT100 | ROHM | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | 类似代替 |
|
2SCR514PT100 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SCR514P_09 | ROHM | Midium Power Transistors (80V / 700mA) | 获取价格 |
|
| 2SCR514P_10 | ROHM | Midium Power Transistors (80V / 0.7A) | 获取价格 |
|
| 2SCR514R | ROHM | Midium Power Transistors (80V / 0.7A) | 获取价格 |
|
| 2SCR514RHZG | ROHM | 2SCR514RHZG是一款低VCE(sat)晶体管，非常适用于低频放大应用，是符合AEC-Q101标准的车规级高可靠性产品。 | 获取价格 |
|
| 2SCR514RTL | ROHM | Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, TSMT3, 3 PIN | 获取价格 |
|
| 2SCR522EB | ROHM | General purpose transistor(20V,0.2A) | 获取价格 |
|
| 2SCR522EBTL | ROHM | 暂无描述 | 获取价格 |
|
| 2SCR522M | ROHM | General purpose transistor(20V,0.2A) | 获取价格 |
|
| 2SCR522MT2L | ROHM | Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, VMT3, 3 PIN | 获取价格 |
|
| 2SCR522UB | ROHM | General purpose transistor(20V,0.2A) | 获取价格 |
|
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