2SD1760TL/PQ [ROHM]
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | 2SD1760TL/PQ |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, 晶体 晶体管 |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!Features
!External dimensions (Units : mm)
CE(sat)
1) Low V
.
2SD1760
2SD1864
CE(sat)
V
= 0.5V (Typ.)
2.5±0.2
6.8±
0.2
+0.2
2.3
−0.1
C
B
(I /I = 2A / 0.2A)
6.5±0.2
C0.5
+0.2
5.1
0.5±0.1
−0.1
2) Complements the 2SB1184 / 2SB1243.
0.65Max.
0.65±0.1
0.75
0.9
!Structure
Epitaxial planar type
NPN silicon transistor
0.5±0.1
0.55±0.1
1.0±0.2
2.3±0.2 2.3±0.2
(1) (2) (3)
(1) (2)
(3)
2.54
2.54
1.05
0.45±0.1
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
ROHM : CPT3
EIAJ
:
SC-63
ROHM : ATV
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
60
50
5
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
V
V
V
3
A (DC)
A (Pulse)
Collector current
I
C
4.5
1
*
2
*
2SD1760
2SD1864
15
1
W (Tc =25°C)
Collector power
dissipation
P
C
W
°C
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55~+150
1 Single pulse, P
W
= 100ms
*
*
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
2SD1760 / 2SD1864
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
60
50
5
-
-
-
I
I
I
C
C
E
= 50µA
= 1mA
-
-
V
-
V
= 50µA
CB = 40V
EB = 4V
I
CBO
EBO
CE (sat)
FE
-
-
1
µA
µA
V
V
V
Emitter cutoff current
I
-
-
1
Collector-emitter saturation voltage
DC current transfer ratio
V
-
0.5
-
1
IC/IB = 2A/0.2A
*
*
*
-
h
82
-
390
-
V
V
V
CE = 3V, I
C
E
= 0.5A
Transition frequency
f
T
90
40
MHz
pF
CE = 5V, I
= −500mA, f = 30MHz
Output capacitance
Cob
-
-
CB = 10V, IE = 0A, f = 1MHz
Measured using pulse current.
*
!Packaging specifications and hFE
FE
h
values are classified as follows:
Package
Taping
Code
TL
TV2
Basic ordering
unit (pieces)
2500
2500
-
Item
P
Q
R
Type
hFE
hFE
82~180
120~270
180~390
2SD1760
2SD1864
PQR
PQR
-
!Electrical characteristic curves
3.0
2.5
3.0
2.5
10
40mA
35mA
30mA
25mA
20mA
50mA
45mA
40mA
35mA
30mA
25mA
Ta = 25°C
45mA
Ta = 25°C
V
CE = 3V
5
50mA
2
1
Ta = 100°C
25°C
20mA
15mA
2.0
1.5
1.0
2.0
1.5
1.0
0.5
-25°C
15mA
0.5
10mA
0.2
10mA
5mA
0.1
IB = 5mA
0.05
0.5
0
P
C
= 15W
0.02
0.01
IB = 0mA
0
0
0
1
2
3
4
5
10
20
30
40
50
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE V)
(
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded-emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics( ΙΙ )
10
1000
1000
Ta = 25°C
V
CE = 3V
Ta = 25°C
500
200
500
5
200
100
50
Ta = 100°C
2
1
V
CE = 5V
100
50
0.5
25°C
-25°C
3V
20
10
5
20
10
5
0.2
0.1
I
C/I
B
= 50
20
10
0.05
2
1
2
1
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
0.010.02 0.05 0.1 0.2 0.5
1
2
5
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I (A)
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig.6 Collector-emitter saturation
voltage vs. collector current
collector curren( ΙΙ )
collector current( Ι )
2SD1760 / 2SD1864
Transistors
10
5
1000
500
1000
lC/lB = 10
Ta = 25°C
CE = 5V
Ta = 25°C
f = 1MHz
V
500
IE = 0A
2
200
100
50
200
100
50
1
Ta = -25°C
0.5
100°C
V
BE (sat)
25°C
0.2
0.1
20
10
5
20
10
5
Ta = 100°C
-25°C
0.05
25°C
V
CE (sat)
2
1
2
1
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
1
2
5
10 20
50 100 200 5001000
(mA)
0.1 0.2 0.5
1
2
5
10 20
50 100
COLLECTOR CURRENT : I
C
(A)
EMITTER CURRENT : −I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current
Fig.8 Gain bandwidth product vs.
emitter current
Base-emitter saturation voltage
vs. collector current
5
5
V
CE=5v
Pw=100mSec
I
C=0.2A
2
1
2
1
100
10
1
DC
0.5
0.5
DC
0.2
0.1
0.2
0.1
0.05
0.05
0.02
Ta=25°C
Single
0.02
0.01
Ta = 25°C
Single pulse
nonrepetitive
pulse
*
0.1
0.1 0.2 0.5
1
2
5
10 20
50 100
0.2 0.5
1
5
10 20
50 100
2
1
10
100 1Sec 10Sec 100Sec
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
TIME : T (ms)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SD1760)
Fig.11 Transient thermal resistance
(2SD1760)
Fig.12 Safe operating area
(2SD1864)
100
10
1
0.1
1
10
100
1
10Sec 100Sec1000Sec
TIME : T (ms)
Fig.13 Transient thermal resistance
(2SD1864)
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