2SD1768STP/Q [ROHM]
1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, SPT, SC-72, 3 PIN;
| 型号： | 2SD1768STP/Q |
| 厂家： | 
ROHM |
| 描述： | 1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, SPT, SC-72, 3 PIN 开关 晶体管 |
| 文件： | 总4页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Features
Dimensions (Unit : mm)
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
2SD1898
+0.2
−0.1
4.5
±0.1
1.5
1.6±0.1
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
(1) (2) (3)
+0.1
0.4
−0.05
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4±0.1
1.5±0.1
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
Structure
Epitaxial planer type
NPN silicon transistor
Abbreviated symbol : DF
2SD1768S
4±0.2
2SD1733
2±0.2
+
0.2
2.3
6.5
±
0.2
−
0.1
C0.5
+
0.2
5.1
−
0.1
0.5±
0.1
+0.15
−0.05
0.45
0.65±0.1
0.75
0.9
0.2 2.3±
+0.15
+0.4
0.55
±0.1
0.45
2.5
0.5
−0.05
−0.1
2.3±
0.2
5
1.0±0.2
(1) (2) (3)
(1) (2) (3)
Taping specifications
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1863
2.5±0.2
6.8±0.2
0.65Max.
0.5±0.1
(1) (2)
(3)
2.54
2.54
1.05
0.45±0.1
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
www.rohm.com
2011.05 - Rev.D
1/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Data Sheet
Absolute maximum ratings (Ta=25C)
Limits
Parameter
Symbol
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
120
V
80
V
5
V
1
A (DC)
A (Pulse)∗1
W
Collector current
I
C
2
0.5
2SD1898
2
W
W
∗3
1
Collector power
dissipation
2SD1733
P
C
10
W (Tc=25°C)
2SD1768S
2SD1863
0.3
W
1
W
°C
°C
∗2
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
∗3 When mounted on a 40×40×0.7mm ceramic board.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
Conditions
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
120
80
5
V
V
I
I
I
C
=
=
50μA
1mA
−
−
C
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
2SD1863
BVEBO
ICBO
−
−
V
E=
50μA
−
−
1
μA
μA
−
V
CB
=
100V
I
EBO
−
−
1
V
EB
=
4V
120
120
120
−
−
390
390
390
0.4
−
∗
DC current
2SD1733, 2SD1898
h
FE
−
−
V
CE
=
3V, I =0.5A
C
transfer ratio
2SD1768S
Collector-emitter saturation voltage
Transition frequency
−
−
V
CE(sat)
0.15
100
20
V
I
C/I
B
=500mA/20mA
f
T
−
MHz
pF
V
CE
=
10V, I
10V, I
E
=−50mA, f
=100MHz
Output capacitance
Cob
−
−
V
CB
=
E
=
0A, f 1MHz
=
∗ Measured using pulse current
Packaging specifications and hFE
Package
Code
Taping
TL TP
1000 2500 5000 2500
T100
TV2
hFE
Basic ordering unit (pieces)
Type
2SD1898
2SD1733
2SD1768S
QR
QR
QR
QR
−
−
−
−
−
−
−
−
−
−
−
2SD1863
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
www.rohm.com
2011.05 - Rev.D
2/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Data Sheet
Electrical characteristic curves
1000
Ta=25°C
Ta=25°C
Ta=25°C
V
CE=5V
6mA
5mA
4mA
1.0
0.8
0.6
0.4
100
10
1000
3mA
2mA
V
CE=3V
1V
100
0
1
1mA
0.2
0
I
B
=0mA
0.1
0
0
2
4
6
8
10
0
10 1000
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
V)
COLLECTOR CURRENT : IC (mA)
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
Fig.1 Grounded emitter propagation
characteristics
1000
Ta=25°C
Ta=25°C
f=1MHz
Ta=25°C
V
CE=5V
500
IE=0A
Ic=0A
200
100
50
2.0
100
10
1
1.0
0.5
20
10
5
0.2
I
C
/I
B
=20/1
0.1
10/1
0.05
2
0.02
0.01
1
2
5
10 20 50 100 200 500 1000
0
10
100
1000
(mA)
0.1 0.2 0.5
1
2
5
10 20 50 100
EMITTER CURRENT : −I (mA)
E
COLLECTOR CURRENT : I
C
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
V)
(V)
Fig.5 Gain bandwidth product vs.
emitter current
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
10
5
10
5
Ta=25°C
Single
non-repetitive
pulse
Ta=25°C
Single
non-repetitive
pulse
Ic Max (Pulse)
DC
Ic Max (Pulse)
DC
2
1
2
1
Pw=10m
500m
500m
S
200m
100m
50m
200m
100m
50m
20m
10m
5m
20m
10m
5m
2m
1m
0.1 0.2 0.5
2m
1m
0.1 0.2 0.5
1
2
5
10 20 501002005001000
1
2
5 10 20 50100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe operating area
(2SD1863)
Fig.8 Safe operating area
(2SD1898)
www.rohm.com
2011.05 - Rev.D
3/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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R1120
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