2SD1863 [ROHM]
Power Transistor (80V, 1A); 功率晶体管（ 80V ， 1A ）
| 型号： | 2SD1863 |
| 厂家： | 
ROHM |
| 描述： | Power Transistor (80V, 1A) |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F
!Features
!External dimensions (Units : mm)
CEO CEO
1) High V
, V
=80V
2SD1898
C
C
2) High I , I =1A (DC)
+0.2
4.5
−0.1
+0.2
−0.1
1.5
FE
3) Good h linearity
1.6±0.1
CE
4) Low V (sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
(1) (2) (3)
+0.1
0.4
−0.05
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4±0.1
1.5±0.1
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
!Structure
Epitaxial planer type
NPN silicon transistor
Abbreviated symbol : DF
2SD1768S
4±0.2
2SD1733
2±0.2
+
0.2
2.3
6.5
±
0.2
−
0.1
C0.5
+
0.2
5.1
−
0.1
0.5±
0.1
+0.15
−0.05
0.45
0.65±0.1
0.75
0.9
0.2 2.3±
+0.15
+0.4
0.55
±0.1
0.45
2.5
0.5
−0.05
−0.1
2.3±
0.2
5
1.0±0.2
(1) (2) (3)
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1863
2SD1381F
2.5±0.2
7.8±0.2
3.2±0.2
6.8±0.2
Front
φ
3.3
Back
φ
3.19
1.6
C0.7
0.65Max.
0.95
1.75
0.5±0.1
0.8
(1) (2)
(3)
2.54
2.54
2.3±0.5
2.3±0.5 0.7±0.1
1.76±0.5
1.05
0.45±0.1
(1) (2)(3)
(1) Emitter
(2) Collector
(3) Base
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
ROHM : TO-126FP
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Absolute maximum ratings (Ta=25°C)
Limits
100
80
5
Parameter
Symbol
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
V
V
V
1
A (DC)
A (Pulse)
Collector current
I
C
2
1
∗
0.5
2
2SD1898
3
W
∗
1
2SD1733
2SD1768S
2SD1863
2SD1381F
10
0.3
1
W (Tc=25˚C)
Collector power
dissipation
PC
2
W
∗
1.2
5
W (Tc=25˚C)
Junction temperature
Storage temperature
1 Pw=20ms, duty=1 / 2
Tj
150
˚C
˚C
Tstg
−55∼+150
∗
∗
∗
2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
3 When mounted on a 40×40×0.7mm ceramic board.
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
V
Conditions
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
100
80
5
−
−
I
I
I
C
=
=
50µA
1mA
−
V
C
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
2SD1863
BVEBO
ICBO
−
−
V
E=
50µA
−
−
1
µA
µA
−
V
V
CB
EB
=
80V
I
EBO
−
−
1
=
4V
180
82
120
82
−
−
390
390
390
270
0.4
−
2SD1733, 2SD1898
2SD1768S
−
−
DC current
∗
h
FE
V
CE=3V, IC=0.5A
transfer ratio
−
−
2SD1381F
−
−
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
0.15
100
20
V
I
C/I
B
=
500mA/20mA
f
T
−
MHz
pF
V
V
CE
CB
=
10V, I
10V, I
E
E
=−50mA, f
=100MHz
Output capacitance
Cob
−
−
=
=
0A, f 1MHz
=
Measured using pulse current
*
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Packaging specifications and hFE
Package
Code
Taping
TL TP
1000 2500 5000 2500
Bulk
T100
TV2
−
hFE
Basic ordering unit (pieces)
2000
Type
2SD1898
2SD1733
2SD1768S
PQR
PQR
QR
R
−
−
−
−
−
−
−
−
−
−
−
−
−
2SD1863
−
−
−
−
−
−
2SD1381F
−
PQ
FE
h
values are classified as follows :
Item
P
Q
R
hFE
82~180
120~270
180~390
!Electrical characteristic curves
1000
Ta=25˚C
Ta=25˚C
Ta=25˚C
V
CE=5V
6mA
5mA
4mA
1.0
0.8
0.6
0.4
100
10
1000
V
CE=3V
3mA
2mA
1V
100
0
1
1mA
0.2
0
I
B
=0mA
0.1
0
0
2
4
6
8
10
0
10
100
1000
(mA)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : I
C
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
Fig.1 Grounded emitter propagation
characteristics
1000
100
Ta=25˚C
Ta=25˚C
Ta=25˚C
f=1MHz
IE=0A
Ic=0A
V
CE=5V
500
200
100
50
2.0
1.0
0.5
20
10
5
0.2
I
C/I
B
=20/1
10/1
10
0.1
0.05
2
0.02
0.01
1
1
2
5
10 20 50 100 200 500 1000
0.1 0.2 0.5
1
2
5
10 20 50 100
0
10
100
1000
(mA)
EMITTER CURRENT : −I (mA)
E
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
V)
COLLECTOR CURRENT : I
C
(V)
Fig.5 Gain bandwidth product vs.
emitter current
Fig.6 Collector output capacitance vs.
collector-base voltage
Fig.4 Collector-emitter saturation
voltage vs. collector current
Emitter input capacitance vs.
emitter-base voltage
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
10
5
10
5
10
5
Ta=45˚C
Single
non-repetitive
pulse
Ta=25˚C
Single
non-repetitive
pulse
Ta=25˚C
Single
non-repetitive
pulse
Ic Max (Pulse)
Ic Max (Pulse)
DC
Ic Max (Pulse)
DC
2
2
1
2
1
Pw=10m
DC
1
Pw=100mS
500m
500m
500m
S
200m
100m
50m
200m
100m
50m
200m
100m
50m
20m
10m
5m
20m
10m
5m
20m
10m
5m
2m
1m
0.1 0.2 0.5
2m
1m
0.1 0.2 0.5
2m
1m
0.1 0.2 0.5
1
2
5
10 20 50100 2005001000
1
2
5 10 20 50100200 5001000
1
2
5 10 20 501002005001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
(2SD1381F)
Fig.8 Safe operating area
(2SD1898)
Fig.7 Safe operating area
(2SD1863)
相关型号：
2SD1863TV2/Q
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN
ROHM
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