2SD2006 [ROHM]

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE; 1.2W封装的功率晶体管录音设计用于带有自动贴片机TEST
2SD2006
型号: 2SD2006
厂家: ROHM    ROHM
描述:

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
1.2W封装的功率晶体管录音设计用于带有自动贴片机TEST

晶体 晶体管
文件: 总2页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2SD2006P

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SIP
ETC

2SD2006Q

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SIP
ETC

2SD2006R

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SIP
ETC

2SD2006T105

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SD2006T105/P

0.7A, 80V, NPN, Si, POWER TRANSISTOR
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2SD2006T105/PQ

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SD2006T105/PR

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SD2006T105/QR

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SD2006T105/R

0.7A, 80V, NPN, Si, POWER TRANSISTOR
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2SD2006T105P

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SD2006T105Q

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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2SD2006T105R

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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