2SD2118QTL [ROHM]

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, SC-63, 3 PIN;


型号：	2SD2118QTL
厂家：	ROHM
描述：	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, SC-63, 3 PIN 晶体管
文件：	总4页 (文件大小：178K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Low V_CE(sat)transistor (strobe flash)

2SD2118

zFeatures

zDimensions (Unit : mm)

1) Low V^CE(sat).

V^CE(sat)= 0.25V (Typ.)

(I^C/IB = 4A / 0.1A)

2SD2118

2) Excellent DC current gain characteristics.

3) Complements the 2SB1412.

zStructure

Epitaxial planar type

NPN silicon transistor

ROHM : CPT3

EIAJ : SC-63

(1) Base

(2) Collector

(3) Emitter

∗ Denotes hFE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

A(DC)

A(Pulse) ^∗1

Collector current

Collector power

dissipation

W(Tc=25°C)

°C

2SD2118

Junction temperature

Storage temperature

∗1 Single pulse Pw=10ms

150

Tstg

−55 to +150

°C

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol Min.

Typ.

Max.

−

Unit

Conditions

BV^CBO

BVCEO

BVEBO

−

=50µA

=1mA

−

=50µA

CB=40V

EB=5V

CBO

EBO

CE(sat)

−

0.5

1.0

390

−

µA

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

0.3

−

=4A/0.1A

∗

120

−

CE=2V, I

=0.5A

=−50mA, f=100MHz

=0A, f=1MHz

Transition frequency

150

MHz

CE=6V, I

Output capacitance

Cob

−

CE=20V, I

∗ Measured using pulse current.

www.rohm.com

2009.11 - Rev.C

1/3

2SD2118

Data Sheet

zPackaging specifications and h^FE

Package

Code

Taping

Type

Basic ordering unit (pieces) 2500

2SD2118

h^FEvalues are classified as follows :

Item

hFE

120 to 270 180 to 390

zElectrical characteristic curves

5000

50mA

45mA

Ta=25°C

VCE=2V

Ta=25°C

30mA

25mA

20mA

2000

1000

500

Ta=100°C

25°C

15mA

10mA

−25°C

VCE=5V

0.5

40mA

0.2

0.1

35mA

200

100

0.05

5mA

0.02

0.01

=0mA

1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1

0.2 0.4 0.6 0.8 1.0

1.2 1.4

0.4

0.8

1.2

1.6

2.0

COLLECTOR CURRENT : I

(A)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.3 DC current gain vs.

Fig.1 Grounded emitter propagation

characteristics

Fig.2 Grounded emitter output

characteristics

collector current ( Ι )

5000

VCE=1V

VCE=2V

Ta=25°C

2000

1000

500

2000

1000

Ta=100°C

25°C

Ta=100°C

25°C

0.5

−25°C

500

0.2

0.1

200

100

200

100

0.05

C/I

B=50

0.02

0.01

1m 2m 5m0.010.020.050.10.2 0.5 1

1m 2m 5m0.010.02 0.05 0.10.2 0.5

5 10

2m 5m 0.01 0.02 0.05 0.1 0.2 0.5

5 10

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : I (A)

Fig.4 DC current gain vs.

Fig.5 DC current gain vs.

Fig.6 Collector-emitter

collector current ( ΙΙ )

collector current ( ΙΙΙ )

saturation voltage vs.

collector current ( Ι )

lC/lB

=40

lC/lB=30

lC/lB

=10

0.5

Ta=100°C

25°C

Ta=100°C

25°C

Ta=100°C

25°C

0.2

0.1

0.2

0.1

−25°C

0.2

0.1

−25°C

0.05

0.02

0.01

0.02

0.01

0.02

0.01

2m 5m0.01 0.02 0.05 0.1 0.2 0.5

2m 5m 0.010.02 0.05 0.1 0.2 0.5

5 10

2m 5m 0.010.02 0.05 0.1 0.2 0.5

COLLECTOR CURRENT : I (A)

Fig.9 Collector-emitter

Fig.8 Collector-emitter

Fig.7 Collector-emitter

saturation voltage vs.

collector current (IV)

saturation voltage vs.

collector current ( ΙΙΙ )

saturation voltage vs.

collector current ( ΙΙ )

www.rohm.com

2009.11 - Rev.C

2/3

2SD2118

Data Sheet

1000

500

1000

500

lC/lB

=50

Ta=25°C

CE=6V

Ta=25°C

f=1MHz

C=0A

E=0A

200

100

0.5

Ta=100°C

25°C

200

100

Cib

0.2

0.1

−25°C

0.05

Cob

0.02

0.01

2m 5m 0.010.02 0.05 0.1 0.2 0.5

−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1

0.1 0.2 0.5

10 20

COLLECTOR CURRENT : I (A)

EMITTER CURRENT : I (A)

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE : VEB (V)

Fig.10 Collector-emitter

Fig.11 Gain bandwidth product vs.

emitter current

Fig.12 Collector output capacitance vs.

collector-base voltage

saturation voltage vs.

collector current (V)

Emitter input capacitance vs.

emitter-base voltage

Ta=25 (°C)

Single pulse

Ic max (Pulse)

10ms

500m

200m

100m

50m

20m

10m

0.2 0.5 1

10 20 50100200 500

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.13 Safe operating area

(2SD2118)

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2009.11 - Rev.C

3/3

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Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

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Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

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Please be sure to implement in your equipment using the Products safety measures to guard

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R0039

2SD2118QTL [ROHM]

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