2SD2318U [ROHM]
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4.5A I(C) | TO-252VAR ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 4.5AI （ C） | TO- 252VAR\n
| 型号： | 2SD2318U |
| 厂家： | 
ROHM |
| 描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4.5A I(C) | TO-252VAR
|
| 文件： | 总1页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2318
Transistors
High-current gain Power Transistor
(60V, 3A)
2SD2318
!Features
!External dimensions (Units : mm)
1) High DC current gain.
2) Low saturation voltage.
CE
5.5
0.9
1.5
C
B
(Typ. V (sat) =0.5V at I / I =2A / 0.5A)
3) Complements the 2SB1639.
C0.5
0.8Min.
(1) Base(Gate)
1.5
(2) Collector(Drain)
(3) Emitter(Source)
2.5
ROHM : CPT3
EIAJ : SC-63
9.5
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
80
V
60
V
Emitter-base voltage
6
V
3
4.5
A
Collector current
I
C
A(Pulse)
*
1
W
Collector power dissipation
PC
15
W(Tc=25˚C)
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
-55~+150
Single pulse Pw=100ms
*
!Packaging specifications and hFE
Type
2SD2318
CPT3
UV
Package
hFE
Code
Basic ordering unit (pieces)
TL
2500
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
-
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
80
60
-
-
V
V
I
I
I
C
=
=
50µA
1mA
C
-
-
6
-
V
E
=
50µA
I
CBO
-
-
100
100
1.0
1.5
1800
-
µA
µA
V
V
V
CB
EB
=
80V
Emitter cutoff current
I
EBO
-
-
=
6V
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
V
CE(sat)
-
-
I
I
C/I
B
=
2A/0.05A
2A/0.05A
*
V
BE(sat)
-
-
V
C/I
B
=
*
560
-
-
hFE
V
V
CE/I
CE
C=
4V/0.5A
5V, I =-0.2A, f
10V, I 0A, f 1MHz
Transition frequency
f
T
-
-
50
60
MHz
pF
=
=
E
=10MHz
Output capacitance
Cob
-
V
CB
E
=
=
*
Measured using pulse current.
*
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