2SD2351T106/V [ROHM]
150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN;
| 型号： | 2SD2351T106/V |
| 厂家： | 
ROHM |
| 描述： | 150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, UMT3, SC-70, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2707/2SD2654/2SD2351/2SD2226K/2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707/2SD2654/2SD2351/2SD2226K/2SD2227S
zFeatures
zExternal dimensions (Unit : mm)
1) High DC current gain.
2SD2707
2) High emitter-base voltage. (VCBO=12V)
3) Low saturation voltage.
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
1.2
0.2 0.8 0.2
( )
2
(3)
( )
1
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
2SD2654
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Symbol
Limits
60
Unit
VCBO
VCEO
VEBO
V
V
Collector-emitter voltage
Emitter-base voltage
50
( )
1
12
V
( )
2
( )
3
0.15
0.2
A (DC)
A (Pulse)
Collector current
IC
∗
0.8
1.6
2SD2654, 2SD2707
0.15
0.2
Collector power
dissipation
2SD2351, 2SD2226K
2SD2227S
P
C
W
0.3
0.1Min.
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
(3) Collector
Junction temperature
Storage temperature
∗Single pulse Pw=100ms
Tj
150
°C
°C
Tstg
−55 to +150
2SD2351
zPackaging specifications and hFE
1.25
2.1
Type
2SD2707
VMT3
VW
2SD2654
EMT3
VW
2SD2351
UMT3
VW
2SD2226K 2SD2227S
SMT3
VW
SPT
VW
−
package
hFE
Marking
Code
BJ
BJ
BJ
BJ
∗
∗
∗
∗
0.1Min.
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
T2L
TL
T106
3000
T146
3000
TP
Basic ordering unit (pleces)
8000
3000
5000
Each lead has same dimensions
(3) Collector
Denotes
hFE
∗
2SD2226K
1.6
2.8
(1) Emitter
(2) Base
0.3Min.
ROHM : SMT3
EIAJ : SC-59
(3) Collector
Each lead has same dimensions
2SD2227S
4
2
0.45
0.45
2.5 0.5
5
2
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
( )
1
(
)
(
)
3
Taping specifications
Rev.A
1/3
2SD2707/2SD2654/2SD2351/2SD2226K/2SD2227S
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
BVCBO
BVCEO
BVEBO
Min.
60
50
12
−
−
−
820
−
−
Typ. Max.
Unit
V
Conditions
−
−
−
−
I
I
I
C
=10µA
=1mA
V
C
−
−
V
E
=10µA
CB=50V
EB=12V
I
CBO
EBO
CE(sat)
FE
−
−
−
−
250
3.5
0.3
0.3
0.3
2700
−
µA
µA
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
V
I
C
/I
B
=50mA/5mA
∗
∗
∗
h
−
MHz
pF
V
V
V
CE/IC=5V/1mA
CE=5V, I
CB=5V, I
Transition frequency
f
T
E
E
=−10mA, f=100MHz
=0A, f=1MHz
Output capacitance
Cob
−
∗ Measured using pulse current.
zElectrical characteristics curves
2.0
200
V
100
200
160
120
80
Ta=25°C
CE=5V
1.2µA
500µA
450µA
400µA
350µA
300µA
1.6
50
2.0µA
1.0µA
1.8µA
20
10
5
1.6µA
1.4µA
0.8µA
0.6µA
0.4µA
0.2µA
1.2
0.8
0.4
0
2
1
40
0.5
Ta=25°C
Measured
using pulse current
IB=0
IB=0
0.2
0
0
0
4
8
12
16
20
0
0.1
0.2
0.3
0.4
0.5
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.1 Grounded emitter output
Fig.3 Grounded emitter propagation
characteristics
characteristics ( ΙΙ )
characteristics ( Ι )
10000
1000
10000
5000
Ta=25°C
VCE=5V
Ta=25°C
Measured
Measured
5000
500
using pulse current
using pulse current
Ta=100°C
25°C
2000
1000
500
2000
1000
500
200
100
50
V
CE=10V
I
C
/ I
B
=50
−25°C
20
10
5V
200
100
50
200
100
50
20
10
5
3V
20
10
20
10
2
1
0.2
0.5
1
2
5
10 20
50 100 200
(mA)
0.2
0.5
1
2
5
10 20
50 100 200
(mA)
0.2
0.5
1
2
5
10 20
50 100 200
C (mA)
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.5 DC current gain vs.
Fig.4 DC current gain vs.
Fig.6 Collector-emitter saturation voltage
collector current ( ΙΙ )
vs. collector current ( Ι )
collector current ( Ι )
Rev.A
2/3
2SD2707/2SD2654/2SD2351/2SD2226K/2SD2227S
Transistors
1000
500
10000
5000
10000
5000
Ta=25°C
IC/IB
=10
IC /I
B=10
Ta=−25°C
25°C
200
100
2000
1000
500
2000
1000
500
IC/IB=10
20
Ta=100°C
50
25°C
50
100°C
20
10
5
200
100
50
200
100
50
−25°C
2
1
20
10
20
10
0.2
0.5
1
2
5
10 20 50 100 200
(mA)
0.2
0.5
1
2
5
10 20
50 100 200
(mA)
0.2
0.5 50 100 200
1
2
5
10 20
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
Fig.8 Base-emitter saturation voltage
Fig.9 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
vs. collector current ( Ι )
vs. collector current ( ΙΙ )
100
1000
1000
Ta=25°C
Ta=25°C
f=1kHz
50
500
500
f=1MHz
Vi=100mV(rms)
IE=0A
RL=1kΩ
20
10
5
200
100
50
200
100
50
2
1
20
10
5
20
10
5
0.5
Ta=25°C
CE=5V
Measured
using pulse current
V
0.2
0.1
0.01 0.02
2
1
2
1
0.05 0.1 0.2
0.5
1
2
5
10
−1 −2
−5 −10 −20
−50 −100−200 −500−1000
(mA)
0.1 0.2
0.5
1
2
5
10 20
50 100
I
B
(mA)
EMITTER CURRENT : I
E
COLLRCTOR TO BASE VOLTAGE : VCB (V)
Fig.12 Output on resistance
vs. base current
Fig.10 Gain bandwidth product
vs. emitter current
Fig.11 Collector output capacitance
vs. collector-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
2SD2351T106/VW
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
2SD2351T107/UV
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
2SD2351T107/V
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
2SD2351T107/W
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
©2020 ICPDF网 联系我们和版权申明