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2SD2351V [ROHM]

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,;
2SD2351V
型号: 2SD2351V
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

放大器 光电二极管 晶体管
文件: 总3页 (文件大小:97K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2SD2351VWT106

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70

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ETC

2SD2351W

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR

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ETC

2SD2352

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

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TOSHIBA

2SD2352_06

Power Amplifier Applications

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TOSHIBA

2SD2353

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

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TOSHIBA

2SD2353_06

Silicon NPN Triple Diffused Type

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TOSHIBA

2SD2354

Power Bipolar Transistor, 7A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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PANASONIC

2SD2355

Power Bipolar Transistor, 10A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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PANASONIC

2SD2356

TRANSISTORS(SELECTION GIUDE BY APPLICATIONS AND FUNCTIONS)

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PANASONIC

2SD2357

Silicon NPN epitaxial planer type(For low-frequency amplification)

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PANASONIC

2SD2357

Silicon NPN Epitaxial Planar Type

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KEXIN

2SD2357

Low collector-emitter saturation voltage VCE(sat). Large collector power dissipation PC.

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TYSEMI

2SD2357H

Small Signal Bipolar Transistor, 1A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon

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PANASONIC

2SD2357TX

Small Signal Bipolar Transistor, 1A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon

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PANASONIC

2SD2358

Silicon NPN epitaxial planer type(For low-frequency output amplification)

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PANASONIC

2SD2358-SZ

Small Signal Bipolar Transistor, 1A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon

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PANASONIC

2SD2359

Silicon NPN epitaxial planer type(For low-frequency amplification)

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PANASONIC

2SD2359

Silicon NPN Epitaxial Planar Type

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KEXIN

2SD2359

Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment

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TYSEMI

2SD2359H

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

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PANASONIC