BD2270HFV-LB [ROHM]
本产品是面向工业设备市场的产品，保证可长期稳定供货。 是适合这些用途的产品。BD2270HVF是1个电路内置了驱动N channel Power MOSFET的驱动电路的IC。内置栅极驱动电压生成用电荷泵、输出放电用FET，仅外接NMOSFET就可构成开关电路。此外，控制端子输入部内置带滞后的比较器，可简单实现电源接通时序控制。;
| 型号： | BD2270HFV-LB |
| 厂家： | 
ROHM |
| 描述： | 本产品是面向工业设备市场的产品，保证可长期稳定供货。 是适合这些用途的产品。BD2270HVF是1个电路内置了驱动N channel Power MOSFET的驱动电路的IC。内置栅极驱动电压生成用电荷泵、输出放电用FET，仅外接NMOSFET就可构成开关电路。此外，控制端子输入部内置带滞后的比较器，可简单实现电源接通时序控制。 开关 栅极驱动 泵 比较器 |
| 文件： | 总21页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
Controller ICs
for High Side NMOSFET
BD2270HFV-LB
General Description
Key Specifications
This is the product guarantees long time support in
Industrial market.
Input voltage range:
2.7V to 5.5V
GATE rise time (CGATE=500pF) :
GATE output voltage(VCC=5V):
Operating current:
Standby current:
Operating temperature range:
130μs (Typ.)
13.5V(Typ.)
50μA(Typ.)
BD2270HFV is an IC with a built-in external N-channel
MOSFET driver circuit. This IC has a built-in charge
pump circuit for gate drive and output discharge circuit,
enabling configuration of a high side load switch for
N-channel MOSFET drive without using any external
parts.
In addition, the control input terminal has a built-in
comparator with hysteresis function, facilitating control
of the power up sequence. The space saving type of
HVSOF5 package is used.
5μA (Typ.)
-25℃ to +85℃
Package
W(Typ.) D(Typ.) H (Max.)
1.60mm x 1.60mm x 0.60mm
HVSOF5
Features
■
Long time support a product for Industrial
applications.
■
■
■
■
Built-in charge pump
Built-in discharge circuit for output charge
Soft start circuit
Built-in comparator with hysteresis function at
control input terminal
HVSOF5
■
Possible to drive N-channel power MOSFET
Applications
Industrial Equipment, PCs, PC peripheral devices,
digital consumer electronics, etc.
Typical Application Circuit
VIN_SWITCH
VOUT_SWITCH
3.3V
3.3V
Load
GATE
VCC
AEN
DISC
GND
BD2270HFV
ON/OFF
Lineup
GATE output voltage(VCC=5V)
Package
Orderable Part Number
Min.
Typ.
Max.
10V
13.5V
15V
HVSOF5 Reel of 3000 BD2270HFV – LBTR
○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
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BD2270HFV-LB
Block Diagram
GATE
VCC
GND
AEN
Charge
Pump
(x3)
OSC
DISC
Control
Pin Configuration
TOP VIEW
Pin Description
PIN No.
PIN name
VCC
I / O
Function
1
2
-
-
Power input terminal
GND
Ground terminal
Control input terminal
Turn ON the external MOSFET switch with high level input.
3
AEN
I
High level input > 2.0V, Low level input < 0.8V
4
5
DISC
O
O
Switch output discharge terminal
GATE drive output terminal
GATE
Used to connect the gate of the external N-channel MOSFET.
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BD2270HFV-LB
Absolute Maximum Ratings
Parameter
Symbol
VCC
Ratings
-0.3 to 6.0
-0.3 to 6.0
-0.3 to 6.0
-0.3 to 15.0
-55 to 150
669*1
Unit
V
Supply voltage
AEN voltage
VAEN
VDISC
VGATE
TSTG
Pd
V
DISC voltage
V
GATE voltage
V
Storage temperature range
Power dissipation
°C
mW
*1 When mounted on a 70 mm×70 mm×1.6 mm glass epoxy PCB, derate by 5.352 mW/°C above Ta=25°C
Recommended Operating Conditions
Parameter
Symbol
Ratings
2.7 to 5.5
-25 to 85
Unit
V
Operating voltage range
Operating temperature range
VCC
TOPR
°C
Electrical Characteristics (Vcc =3.0V, Ta=25°C unless otherwise specified)
Limits
Parameter
Symbol
Unit
Condition
VAEN = 2.5V
Min.
Typ.
50
5
Max.
75
Operating current
Standby current
ICC
-
-
μA
μA
ISTB
10
VAEN = 0V
VAENH
VAENL
IAEN
1.55
1.35
-
2
1.9
3
2.45
2.35
5
V
V
High level input
Low level input
VAEN = 3V
AEN input voltage
AEN input current
μA
10
6.6
6
13.5
9.5
15
9.9
9
V
V
V
VCC=5V
GATE output voltage
VGATE
VCC=3.3V
VCC=3V
8.5
C
V
GATE=500pF VCC=3Ｖ
GATE > 4V
CGATE = 500pF VCC=3V
GATE < 0.5V
GATE rise time
GATE fall time
TON
-
-
130
18
750
60
μs
μs
TOFF
V
DISC discharge resistance
RDISC
-
200
300
Ω
VAEN=0V
Measurement Circuit
CGATE
GATE
VCC
AEN
DISC
GND
ON/OFF
BD2270HFV
Timing Diagram
VAENH
TON2
TON1
VAENL
TOFF
VAEN
VCC+2V
VCC+1V
VGATE
0.5V
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BD2270HFV-LB
Typical Performance Curves
140
120
100
80
140
Ta=25°C
VCC=3.0V
120
100
80
60
40
20
0
60
40
20
0
-50
0
50
100
2
3
4
5
6
AMBIENT TEMPERATURE : Ta[
]
℃
SUPPLY VOLTAGE : VCC[V]
Figure 1. Operating Current
AEN Enable
Figure 2. Operating Current
AEN Enable
14
12
10
8
14
12
10
8
VCC=3.0V
Ta=25°C
6
6
4
4
2
2
0
0
-50
0
50
100
2
3
4
5
6
SUPPLY VOLTAGE : VCC[V]
AMBIENT TEMPERATURE : Ta[
]
℃
Figure 3. Standby Current
AEN Disable
Figure 4. Standby Current
AEN Disable
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BD2270HFV-LB
Typical Performance Curves - continued
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
VCC=3.0V
Ta=25°C
2.5
Low to High
2.0
Low to High
High to Low
High to Low
1.5
1.0
0.5
0.0
-50
0
50
100
2
3
4
5
6
SUPPLY VOLTAGE : VCC[V]
AMBIENT TEMPERATURE : Ta[
]
℃
Figure 5. AEN Input Voltage
Figure 6. AEN Input Voltage
10.0
8.0
6.0
4.0
2.0
0.0
10.0
8.0
6.0
4.0
2.0
0.0
Ta=25°C
VCC=3.0V
-50
0
50
100
2
3
4
5
6
SUPPLY VOLTAGE : VCC[V]
AMBIENT TEMPERATURE : Ta[
]
℃
Figure 7. AEN Input Current
Figure 8. AEN Input Current
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Typical Performance Curves - continued
14
14
12
10
8
VCC=3.0V
Ta=25°C
12
10
8
6
6
4
4
2
2
0
0
2
3
4
5
6
-50
0
50
100
SUPPLY VOLTAGE : VCC[V]
AMBIENT TEMPERATURE : Ta[
]
℃
Figure 9. GATE Output Voltage
Figure 10. GATE Output Voltage
300
250
200
150
100
50
300
VCC=3.0V
Ta=25°C
250
200
150
100
50
0
-50
0
50
100
0
2
3
4
5
6
AMBIENT TEMPERATURE : Ta[
]
℃
SUPPLY VOLTEGE : VCC[V]
Figure 11. DISC ON Resistance
Figure 12. DISC ON Resistance
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BD2270HFV-LB
Typical Performance Curves - continued
200
200
160
120
80
Ta=25°C, CGATE=500pF
VCC=3.0V, CGATE=500pF
160
120
80
40
0
40
0
2
3
4
5
6
-50
0
50
100
SUPPLY VOLTAGE : VCC[V]
AMBIENT TEMPERATURE : Ta[
]
℃
Figure 13. GATE Rise Time 1
Figure 14. GATE Rise Time 1
350
350
300
250
200
150
100
50
VCC=3.0V, CGATE=500pF
Ta=25°C, CGATE=500pF
300
250
200
150
100
50
0
0
-50
0
50
100
2
3
4
5
6
SUPPLY VOLTAGE : VCC[V]
AMBIENT TEMPERATURE : Ta[
]
℃
Figure 15. GATE Rise Time 2
Figure 16. GATE Rise Time 2
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Typical Performance Curves - continued
20
16
12
8
20
Ta=25°C, CGATE=500pF
VCC=3.0V, CGATE=500pF
16
12
8
4
4
0
0
-50
0
50
100
2
3
4
5
6
SUPPLY VOLTAGE : VCC[V]
AMBIENT TEMPERATURE : Ta[
]
℃
Figure 17. GATE Fall Time
Figure 18. GATE Fall Time
100.0
10.0
1.0
100.0
10.0
1.0
VCC=3.0V
VCC=5.0V
0.1
0.1
0
2
4
6
8
0
2
4
6
8
GATE VOLTAGE ABOVE SUPPLY : VGATE[V]
GATE VOLTAGE ABOVE SUPPLY : VGATE[V]
Figure 19. GATE Drive Current
Figure 20. GATE Drive Current
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Datasheet
BD2270HFV-LB
Typical Wave Forms
VAEN
VAEN
(5V/div)
(5V/div)
VCC=3.0V
CGATE=500pF
VCC=3.0V
CGATE=500pF
VGATE
(2V/div)
VGATE
(2V/div)
TIME (1ms/div)
TIME (100μs/div)
Figure 21. GATE Rise / Fall Characteristics
Figure 22. GATE Rise Characteristics
VAEN
(5V/div)
VAEN
(5V/div)
VCC=3.0V
VCC=3.0V
RTF025N03
CGATE=500pF
VGATE
VOUT_SWITCH
VGATE
(2V/div)
(2V/div)
TIME (5μs/div)
TIME (100μs/div)
Figure 23. GATE Fall Characteristics
Figure 24. GATE Switch Rise Characteristics
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BD2270HFV-LB
Typical Wave Forms - continued
VAEN
VAEN
(5V/div)
(5V/div)
VCC=3.0V
VCC=3.0V
RTF025N03
RTF025N03
CL = 100μF
VGATE
VGATE
VOUT_SWITCH
(2V/div)
VOUT_SWITCH
(2V/div)
TIME (5μs/div)
TIME (20ms/div)
Figure 25. GATE Switch Fall
Characteristics
Figure 26. GATE Switch Fall
Characteristics
VAEN
(5V/div)
VAEN
(5V/div)
VCC=3.0V
VCC=3.0V
RSS130N03
RSS130N03
VGATE
VGATE
VOUT_SWITCH
VOUT_SWITCH
(2V/div)
(2V/div)
TIME (10μs/div)
TIME (100μs/div)
Figure 28. GATE Switch Fall
Characteristics
Figure 27. GATE Switch Rise
Characteristics
MOSFET : RTF025N03
RSS130N03
IN_SWITCH
OUT_SWITCH
3.3V
1uF
CL
GATE
VCC
DISC
GND
ON/OFF
AEN
BD2270HFV
Figure 29. Switch Rise / Fall Characteristics Measurement Circuit Diagram
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BD2270HFV-LB
Application Circuit
1.
Configuration of 3.3V load switch
VIN_SWITCH
VOUT_SWITCH
3.3V
3.3V
Load
GATE
VCC
AEN
DISC
GND
BD2270HFV
ON/OFF
Figure 30. Configuration of 3.3V Load Switch
2.
Configuration of 5V load switch
5V
5V
Load
GATE
VCC
AEN
DISC
GND
ON/OFF
BD2270HFV
Figure 31. Configuration of 5V Load Switch
A 5V load switch can be configured like the 3.3V load switch. However, if the external N-channel MOSFET has low
VGSS, clamp it with Zener diode and the like.
3. Configuration of low-voltage load switch
1.2V
3.3V
1.2V
Load
GATE
VCC
AEN
DISC
GND
ON/OFF
BD2270HFV
Figure 32. Configuration of Low-voltage Load Switch
Providing BD2270HFV drive power supply enables configuration of a low-voltage load switch.
4. Soft start configuration
3.3V
3.3V
Load
GATE
VCC
AEN
DISC
GND
ON/OFF
BD2270HFV
Figure 33. Soft Start Configuration
Connecting an external capacitor to the GATE terminal of the BD2270HFV makes it possible to lengthen the rise time
of the N-channel MOSFET, thus achieving reduction of the inrush current to the large-capacity capacitor mounted on
the load side.
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Datasheet
BD2270HFV-LB
Application Information
The system connection diagram shown here gives no guarantee to the operation of the application circuit.
When the recommended external circuit components are changed, be sure to consider adequate margins by taking into
account external parts and/or IC’s dispersion including not only static characteristics, but also transient characteristics.
Functional Description
The BD2270HVF is a driver IC that uses an N-channel MOSFET as a high side load switch. This IC incorporates the
following functions.
1. GATE drive
The gate drive voltage of an N-channel MOSFET is generated by a built-in charge pump in the BD2270HFV. The
built-in charge pump in the BD2270HFV generates a voltage three times as high as the power supply voltage at the
GATE terminal. In addition, since this IC has a built-in capacitor for the charge pump, it needs no external parts.
The charge pump operates when the AEN is set to High. When the AEN is set to Low, the GATE terminal voltage is
fixed to the GND level.
2. Output discharge circuit
The output discharge circuit is enabled when the AEN is set to Low. When the discharge circuit is activated, the 200Ω
(Typ.) MOSFET switch located between the DISC terminal and the GND terminal turns ON. Connecting the DISC
terminal and the source side (load side) of the N-channel MOSFET makes it possible to immediately discharge
capacitive load.
3. Soft start function
When the AEN terminal input voltage reaches the High level, the built-in charge pump in the BD2270HFV charges the
gate of the N-channel MOSFET. The turn-on time of the N-channel MOSFET is determined by the GATE capacity. In
addition, connecting a capacitor to the GATE terminal makes it possible to lengthen the rise of turn-on time of the
N-channel MOSFET, thus achieving reduction of the inrush current to a large capacitive load.
4. Analog control input terminal
The AEN input of the BD2270HFV is connected to the built-in hysteresis comparator. Consequently, even analog
signals can control the BD2270HFV, thus facilitating the control of the switch ON-OFF sequence.
VCC
V
IN_SWITCH
VAEN
VGATE
VOUT_SWITCH
discharge circuit
ON
OFF
ON
Figure 34. Operation Timing
* To turn ON the power supply (VCC, VIN_SWITCH), set the AEN to Low.
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BD2270HFV-LB
Power Dissipation
(HVSOF5)
800
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (
)
℃
Mounted on a 70 mm×70 mm×1.6 mm glass epoxy PCB
Figure 35. Power dissipation curve (Pd-Ta Curve)
I/O Equivalent Circuit
Pin name
Pin No.
3
Equivalent circuit
AEN
DISC
4
5
GATE
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Datasheet
BD2270HFV-LB
Operational Notes
(1) Absolute Maximum Ratings
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such as
adding a fuse, in case the IC is operated over the absolute maximum ratings
(2) Recommended operating conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
(3) Reverse connection of power supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
terminals.
(4) Power supply line
Design the PCB layout pattern to provide low impedance ground and supply lines. Separate the ground and supply lines
of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the
analog block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature
and aging on the capacitance value when using electrolytic capacitors.
(5) Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
(6) Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong orientation
or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
(7) Operation under strong electromagnetic field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
(8) Testing on application boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always
be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent
damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage.
(9) Regarding input pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
C
E
Pin A
B
C
E
N
P+
P+
P+
N
N
N
P+
P
Parasitic
element
N
P
N
P substrate
P substrate
Parasitic
element
GND
GND
GND
GND
Parasitic element
Parasitic element
Other adjacent elements
Example of monolithic IC structure
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BD2270HFV-LB
(10) GND wiring pattern
When using both small-signal and large-current GND traces, the two ground traces should be routed
separately but connected to a single ground at the reference point of the application board to avoid
fluctuations in the small-signal ground caused by large currents. Also ensure that the GND traces of
external components do not cause variations on the GND voltage. The power supply and ground lines
must be as short and thick as possible to reduce line impedance.
(11) External Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of
capacitance with temperature and the decrease in nominal capacitance due to DC bias and others.
(12) Thermal consideration
Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in
actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (Pc≥Pd).
Package Power dissipation
Power dissipation
: Pd (W)=(Tjmax－Ta)/θja
: Pc (W)=(Vcc－Vo)×Io+Vcc×Ib
Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] ,
θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W],
Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current
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BD2270HFV-LB
Ordering Information
B D 2 2 7 0 H F V
-
L B T R
Part Number
Package
Product class
HFV: HVSOF5
LB for Industrial applications
Packaging and forming specification
TR: Embossed tape and reel
Marking Diagram
HVSOF5(TOP VIEW)
Part Number Marking
LOT Number
A A
Part Number
BD2270HFV
Part Number Marking
AA
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BD2270HFV-LB
Physical Dimension Tape and Reel Information
Package Name
HVSOF5
<Tape and Reel information>
Tape
Embossed carrier tape
3000pcs
Quantity
TR
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
1pin
Direction of feed
Order quantity needs to be multiple of the minimum quantity.
Reel
∗
www.rohm.com
TSZ02201-0E3E0H300410-1-2
21.Feb.2014 Rev.002
© 2013 ROHM Co., Ltd. All rights reserved.
17/18
TSZ22111･15･001
Datasheet
BD2270HFV-LB
Revision History
Date
Revision
001
Changes
13.Mar.2013
New Release
Delete sentence “and log life cycle” in General Description and Futures (page 1).
Change “Industrial Applications” to “Industrial Equipment” in Applications (page 1).
Applied new style (“title”, “Ordering Information” and “Physical Dimension Tape and Reel
Information”).
21.Feb.2014
002
www.rohm.com
TSZ02201-0E3E0H300410-1-2
21.Feb.2014 Rev.002
© 2013 ROHM Co., Ltd. All rights reserved.
18/18
TSZ22111･15･001
Daattaasshheeeett
Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
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