BD2320UEFJ-LA [ROHM]
该产品是能够保证向工业设备市场长期供应的产品，而且是非常适用于这些应用领域的产品。BD2320UEFJ-LA是一款100V耐压的高低边栅极驱动器，可驱动使用自举方式的外置Nch-FET。该产品内置100V耐压的自举二极管，输入逻辑电源电压支持3.3V和5.0V。作为保护功能，高边和低边都配有欠压锁定电路（UVLO）。本IC是从系列型号BD2320EFJ-LA以提高生产效率为目的变更生产线的型号，在新项目选型时，建议选择该型号，在技术规格书中的保证特性并没有差异。此外，由于文档和设计模型等也没有差异，因此除非另有说明，ROHM将公开BD2320EFJ-LAE2的数据。;
| 型号： | BD2320UEFJ-LA |
| 厂家： | 
ROHM |
| 描述： | 该产品是能够保证向工业设备市场长期供应的产品，而且是非常适用于这些应用领域的产品。BD2320UEFJ-LA是一款100V耐压的高低边栅极驱动器，可驱动使用自举方式的外置Nch-FET。该产品内置100V耐压的自举二极管，输入逻辑电源电压支持3.3V和5.0V。作为保护功能，高边和低边都配有欠压锁定电路（UVLO）。本IC是从系列型号BD2320EFJ-LA以提高生产效率为目的变更生产线的型号，在新项目选型时，建议选择该型号，在技术规格书中的保证特性并没有差异。此外，由于文档和设计模型等也没有差异，因此除非另有说明，ROHM将公开BD2320EFJ-LAE2的数据。 生产线 栅极驱动 二极管 驱动器 |
| 文件： | 总21页 (文件大小：1127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
100 V VB 3.5 A/4.5 A Peak Current
High Frequency High-Side and Low-Side
Driver
BD2320EFJ-LA BD2320UEFJ-LA
General Description
Key Specification
This is the product guarantees long time support in
industrial market.
◼ High-Side Supply Voltage and Floating Voltage:100 V
◼ Output Voltage Range:
◼ Output Current Io+/Io-:
◼ Propagation Delay:
◼ Delay Matching:
◼ Offset Voltage Pin Leak Current:
◼ Operating Temperature Range:
7.5 V to 14.5 V
3.5 A/4.5 A
27 ns (Typ)
12 ns (Max)
10 µA (Max)
-40 °C to +125 °C
BD2320EFJ-LA and BD2320UEFJ-LA are the 100 V
maximum voltage High-Side and Low-Side gate drivers
which can drive external Nch-FET using the bootstrap
method. The driver includes a 100 V bootstrap diode and
independent inputs control for High-Side and Low-Side.
3.3 V and 5.0 V are available for interface voltage. Under
Voltage Lockout circuits are built in for High-Side and
Low-Side.
Package
HTSOP-J8
W (Typ) x D (Typ) x H (Max)
4.9 mm x 6.0 mm x 1.0 mm
Features
◼ Long Time Support Product for Industrial Applications.
◼ Under Voltage Lockout (UVLO) for High-Side and
Low-Side Driver
◼ 3.3 V and 5.0 V Interface Voltage
◼ Output In-phase with Input Signal
Applications
◼ Power Supplies for Telecom and Datacom.
◼ MOSFET Application
◼ Half-bridge and Full-bridge Converters
◼ Forward Converters
Typical Application Circuit
Up to 88 V
12 V
VB
HIN
HIN
HO
LIN
LIN
TO
LOAD
VS
VCC
LO
GND
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
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© 2020 ROHM Co., Ltd. All rights reserved.
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BD2320EFJ-LA BD2320UEFJ-LA
Pin Configuration
(TOP VIEW)
1
2
3
4
VCC
VB
8
7
6
5
LO
GND
EXP-PAD
HO
VS
LIN
HIN
Pin Description
Pin No.
Pin Name
VCC
VB
Function
1
2
3
4
5
6
7
8
-
Low-Side supply voltage
High-Side supply voltage
High-Side output
HO
VS
High-Side return
HIN
Logic input for High-Side
Logic input for Low-Side
Ground
LIN
GND
LO
Low-Side output
EXP-PAD
Connect to GND
Block Diagram
BOOT Di
DRV
VCC
VB
VCC
VCC
UVLO
HIN
HO
Level
shift
Input
Logic
VS
VCC
UVLO
VCC
LIN
Level
shift
LO
DRV
Input
Logic
GND
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BD2320EFJ-LA BD2320UEFJ-LA
Absolute Maximum Rating (Ta = 25 °C)
Parameter
VB - VS Voltage
Symbol
Rating
Unit
VBS
VVB
-0.3 to +15
-0.3 to +100
-15 to +100
VVS-0.3 to VVB+0.3
-0.3 to +15
V
V
Voltage on VB
Voltage on VS
VVS
V
Voltage on HO
VHO
V
VCC Voltage
VCC
V
Voltage on LO
VLO
-0.3 to VCC+0.3
-0.3 to VCC+0.3
-50 to +50
V
Voltage on HIN and LIN
Voltage Slew Rate on VB, VS
Maximum Junction Temperature
Storage Temperature Range
VHIN, VLIN
SR
V
V/ns
°C
°C
Tjmax
150
Tstg
-55 to +150
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance (Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
HTSOP-J8
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
206.4
21
45.2
13
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A (Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
70 μm
Footprints and Traces
Layer Number of
Measurement Board
Thermal Via(Note 5)
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Pitch
Diameter
4 Layers
1.20 mm
Φ0.30 mm
Top
Copper Pattern
Bottom
Thickness
70 μm
Copper Pattern
Thickness
35 μm
Copper Pattern
Thickness
70 μm
Footprints and Traces
74.2 mm x 74.2 mm
74.2 mm x 74.2 mm
(Note 5) This thermal via connects with the copper pattern of all layers.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating Temperature
Voltage on VB
Topr
VVB
-40
-0.3
-7.0
7.0
0
+25
+125
+95
+95
14.5
VCC
°C
V
-
-
-
-
-
Voltage on VS
VVS
V
VB - VS Voltage
Voltage on HIN LIN
VCC Voltage
VBS
V
VHIN, VLIN
VCC
V
7.5
14.5
V
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BD2320EFJ-LA BD2320UEFJ-LA
Electrical Characteristics (Unless otherwise specified Ta = -40 °C to +125 °C, VCC = 12.0 V, VBS = 12.0 V, VVS
= VGND, HO = open, LO = open)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Circuit Current
Offset supply Leakage Current
Quiescent VBS Supply Current
Operating VBS Supply Current
Quiescent VCC Supply Current
Operating VCC Supply Current
UVLO
ILK
-
0
10
μA
μA
VVB = VVS = 100 V
IQBS
IOBS
IQCC
IOCC
40
80
160
VLIN = VHIN = 0 V
f = 500 kHz
2.75
60
5.50
120
6.00
11.00
240
mA
μA
VLIN = VHIN = 0 V
f = 500 kHz
3.00
12.00
mA
VCC UVLO Rising Threshold
VCC UVLO Falling Threshold
VCC UVLO Hysteresis
VCCUVR
VCCUVF
VCCUVH
VBSUVR
VBSUVF
VBSUVH
4.6
4.2
-
6.0
5.5
0.5
5.4
4.9
0.5
7.4
6.8
-
V
V
V
V
V
V
VBS UVLO Rising Threshold
VBS UVLO Falling Threshold
VBS UVLO Hysteresis
4.1
3.7
-
6.7
6.1
-
Input
Logic “1” Input Threshold Voltage
Logic “0” Input Threshold Voltage
Input Threshold Hysteresis
Input Pulldown Resistance
Output
VIH
VIL
1.50
0.80
0.3
2.15
1.25
0.9
2.80
1.70
-
V
V
VINHYS
RIN
V
50
100
150
kΩ
High Level Output Voltage, VCC - VLO
VVB - VHO
,
VCC = 12 V, VVB = 12 V,
VVS = 0 V, Io = 10 mA
VCC = 12 V, VVB = 12 V,
VVS = 0 V, Io = 10 mA
VOH
VOL
IO+
-
-
-
-
16
8
-
-
-
-
mV
mV
A
Low Level Output Voltage, VLO
GND, VHO - VVS
-
Output High Short Circuit Pulse
3.5
4.5
VLO, VHO = 0 V
VLO, VHO = 12 V
Current(Note 6)
Output Low Short Circuit Pulse
Current(Note 6)
IO-
A
Bootstrap Diode
Bootstrap Diode Forward Voltage1
Bootstrap Diode Forward Voltage2
VF1
VF2
RD
0.26
0.95
5.0
0.53
1.90
10.0
1.16
3.80
20.0
V
V
Ω
IVCC VB
IVCC VB
IVCC VB
-
= 100 μA
-
= 100 mA
Bootstrap Diode Dynamic Resistance
-
= 80 mA, 100 mA
(Note 6) Not 100 % tested.
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BD2320EFJ-LA BD2320UEFJ-LA
Electrical Characteristics - continued
(Unless otherwise specified Ta = -40 °C to +125 °C, VCC = 12.0 V, VBS = 12.0 V, VVS = VGND, HO = open, LO =
open)
Parameter
HO Turn-on Propagation Delay
LO Turn-on Propagation Delay
HO Turn-off Propagation Delay
LO Turn-off Propagation Delay
HO Turn-on Rise Time
Symbol
tONH
tONL
tOFFH
tOFFL
tRH
Min
10
10
10
10
-
Typ
27
27
29
29
8
Max
50
50
50
50
-
Unit
Conditions
HO = 1 nF
LO = 1 nF
HO = 1 nF
LO = 1 nF
ns
LO Turn-on Rise Time
tRL
-
8
-
HO Turn-off Fall Time
tFH
-
6
-
LO Turn-off Fall Time
tFL
-
6
-
Delay Matching, HS Turn-off, LS Turn-
on
Delay Matching, HS Turn-on, LS Turn-
off
tM1
-
2.0
2.0
12
12
tM2
-
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BD2320EFJ-LA BD2320UEFJ-LA
Typical Performance (Reference Data)
1000
900
800
700
600
500
400
300
200
100
0
1,000
900
800
700
600
500
400
300
200
100
0
0
5
10
15
0
5
10
15
VB - VS Voltage: VBS [V]
VCC Voltage: VCC [V]
Figure 2. Quiescent VBS Supply Current vs VB - VS
Voltage
Figure 3. Quiescent VCC Supply Current vs VCC Voltage
100.00
10.00
1.00
100.00
10.00
1.00
0.10
0.10
0.01
0.01
0.001
0.1
10
1000
0.001
0.1
10
1000
Frequency: fosc [kHz]
Frequency: fosc [kHz]
Figure 4. Operating VBS Supply Current vs Frequency
Figure 5. Operating VCC Supply Current vs Frequency
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Typical Performance (Reference Data) -continued
5.0
50
45
40
35
30
25
20
15
10
5
VCC = 7 V
VCC = 7 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VIH (Rising)
VIL (Falling)
VCC = 12 V
VCC = 12 V
VCC = 15 V
VC = 15 V
C
0
-40 -25 -10 5 20 35 50 65 80 95 110125
-40 -25 -10 5 20 35 50 65 80 95 110125
Temperature [˚C]
Temperature [˚C]
Figure 6. Input Threshold Voltage vs Temperature
Figure 7. High Level Output Voltage VCC - VLO vs
Temperature
50
25
VVB = 7 V
VVB = 7 V
VCC = 7 V
VCC = 7 V
45
40
35
30
25
20
15
10
5
VVB = 12 V
VV = 12 V
B
V
= 12 V
VCCCC= 12 V
20
15
10
5
VVB = 15 V
VVB = 15 V
VCC = 15 V
VCC = 15 V
0
0
-40 -25 -10 5 20 35 50 65 80 95 110125
-40 -25 -10 5 20 35 50 65 80 95 110125
Temperature [˚C]
Temperature [˚C]
Figure 8. High Level Output Voltage VVB - VHO vs
Temperature
Figure 9. Low Level Output Voltage VLO - GND vs
Temperature
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BD2320EFJ-LA BD2320UEFJ-LA
Typical Performance (Reference Data) -continued
25
7.5
7.0
6.5
6.0
5.5
5.0
4.5
VVB = 7 V
VVB = 7 V
VCCUVR (Rising)
VCCUVF (Fallring)
VVB = 12 V
VVB = 12 V
20
15
10
5
V
= 15 V
VVVBB= 15 V
0
-40 -25 -10 5 20 35 50 65 80 95 110125
-40 -25 -10 5 20 35 50 65 80 95 110125
Temperature [˚C]
Temperature [˚C]
Figure 10. Low Level Output Voltage VHO - VVS vs
Temperature
Figure 11. VCC UVLO Threshold vs Temperature
6.5
50
LO Turn-on
45
VBSUVR (Rising)
HO Turn-on
6.0
40
35
30
25
20
15
10
5
LO Turn-off
HO Turn-off
VBSUVF (Falling)
5.5
5.0
4.5
4.0
3.5
0
-40 -25 -10 5 20 35 50 65 80 95 110125
-40 -25 -10 5 20 35 50 65 80 95 110125
Temperature [˚C]
Temperature [˚C]
Figure 12. VBS UVLO Threshold vs Temperature
Figure 13. Propagation Delay vs Temperature
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BD2320EFJ-LA BD2320UEFJ-LA
Typical Performance (Reference Data) -continued
50
12
10
8
LO Turn-on
45
HS Turn-off, LS Turn-on
LS Turn-off, HS Turn-on
HO Turn-on
40
35
30
25
20
15
10
5
LO Turn-off
HO Turn-off
6
4
2
0
0
7
8
9
10 11 12 13 14 15
-40 -25 -10 5 20 35 50 65 80 95 110125
VCC Voltage: VCC [V]
Temparature [˚C]
Figure 14. Propagation Delay vs VCC Voltage
Figure 15. Delay Matching vs Temperature
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
1.5
1.0
0.5
0.0
VF1
0
1
2
3
4
5
6
7
8
9 10 11 12
VF2
0
1
2
3
Diode Voltage [V]
Diode Voltage [V]
Figure 16. Diode Current vs Diode Voltage
Figure 17. Diode Current vs Diode Voltage (VF1, VF2)
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BD2320EFJ-LA BD2320UEFJ-LA
Timing Chart
50 %
50 %
HIN
LIN
tONH
tONL
tOFFH
tOFFL
90 %
90 %
HO
LO
10 %
10 %
tRH
tRL
tFH
tFL
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BD2320EFJ-LA BD2320UEFJ-LA
Selection of Components Externally Connected
1. Gate Resistor
The gate resistor RG(ON), RG(OFF) can be selected to
control the switching speed of the external FET. The
turn on time (tSW) is decided by the gate resistor, gate-
to-source charge (QGS) and gate-to-drain charge
(QGD) of the external FET. In mean current flowing to
a gate of the external FET is calculated as follows.
VCC
푄
+푄
ꢀ푆
ꢀ퐷
퐼퐺 =
(1)
(2)
CGD
푡
푆푊
RONP
LO
RG(ON)
The turn on gate resistor is calculated as follows.
−푉
푅푇푂푇퐴퐿(푂푁) = 푅푂푁푃 ꢁ 푅퐺(푂푁)
DRV
푉
RONN
GND
퐶퐶
ꢀ푆
RG(OFF)
=
CGS
ꢂ
ꢀ
The turn on time is calculated as follows.
(
)
ꢆꢇ
푄
+푄
+ꢇ
ꢋ
ꢀ(ꢈꢉ)
푄
+푄
Figure 18. Gate Driver Equivalent Circuit
ꢀ푆
ꢀ퐷
ꢈꢉꢊ
ꢀ푆
ꢀ퐷
ꢃꢄꢅ
=
=
(3)
(4)
ꢂ
ꢆ푉 −푉
퐵푆
ꢋ
ꢀ
ꢀ푆(ꢌℎ)
The switching slew rate of the external FET (dVs/dt)
also can be controlled by the gate resistor. The
switching slew rate of the external FET (dVs/dt) is
calculated as follows.
IDS
dVs
푑푡
ꢂ
ꢀ
=
ꢍ
ꢎ푆푆
where:
VGS
ꢏꢇꢄꢄ is the feedback capacitance.
Vth
VDS
Substituting equation (4) into equation (2) yields the
following formulas.
tSW
Figure 19. Gate Charge Transfer Characteristics
푉
−푉
퐵푆
ꢀ푆(ꢌℎ)
푅푇푂푇퐴퐿(푂푁) = 푅푂푁푃 ꢁ 푅퐺(푂푁)
=
(5)
(6)
ꢐꢑ푠
ꢍ
ꢎ푆푆
ꢐꢌ
푉
−푉
퐵푆
푅퐺(푂푁)
=
ꢀ푆(ꢌℎ) ꢒ 푅푂푁푃
ꢐꢑ푠
ꢍ
ꢎ푆푆
ꢐꢌ
When the gate driver output turns off, current flows to gate resistor through CGD of the external FET. To prevent that the
gate voltage of the external FET becomes higher than the threshold voltage and the external FET self-turn-on, please set
up the turn off resistor (RG(OFF)) that satisfies the following formulas.
ꢓ퐺ꢄ(푡ꢔ) ≥ 퐼퐺ꢆ푅푂푁푁 ꢁ 푅퐺 푂퐹퐹)ꢋ = ꢏ 푑푉ꢖ ꢆ푅푂푁푁 ꢁ 푅퐺 푂퐹퐹)ꢋ
(7)
(8)
(
(
퐺ꢕ
푑푡
푉
ꢀ푆(ꢌℎ)
푅퐺(푂퐹퐹)
≥
ꢐꢑ푠 ꢒ 푅푂푁푁
ꢍ
ꢀ퐷
ꢐꢌ
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BD2320EFJ-LA BD2320UEFJ-LA
Selection of Components Externally Connected -continued
2. Bootstrap Capacitor CBS
To reduce ripple voltage, ceramic capacitors with low ESR value are recommended for use in the bootstrap circuit.
The maximum voltage drop (ΔVBS) that we have to guarantee when the high-side external FET is in on state must be:
∆ꢓꢗꢄ ≤ ꢓꢏꢏ ꢒ ꢓꢘ ꢒ ꢓꢗꢄ푈푉ꢇ ꢒ ꢓ푂퐿
(9)
where:
ꢓꢏꢏ is the gate driver supply voltage,
ꢓꢘ is the forward voltage drop of the bootstrap diode
ꢓꢗꢄ푈푉ꢇ is the VBS UVLO release voltage
ꢓ푂퐿 is Drain-source voltage of Low side external FET device
The total charge supplied (ꢙ푇푂푇퐴퐿) by the bootstrap capacitor is calculated by following formula.
ꢙ푇푂푇퐴퐿 = ꢙ퐺 ꢁ ꢆ퐼퐿퐾퐺ꢄ ꢁ 퐼퐿퐾ꢕꢂ푂 ꢁ 퐼푄ꢗꢄꢋꢃ퐻푂푁
(10)
where
ꢙ퐺 is the total gate charge of external FET,
퐼퐿퐾퐺ꢄ is the gate-source leakage current of external FET,
퐼퐿퐾ꢕꢂ푂 is the bootstrap diode leakage current,
퐼푄ꢗꢄ is the high-side quiescent current,
ꢃ퐻푂푁 is the high-side switch on time.
The bootstrap capacitor value should satisfy the following formula.
푄
ꢚꢈꢚꢛꢜ
ꢏꢗꢄ
≥
(11)
∆푉
퐵푆
It is not able to keep being turned on the high side in the same way as the high side switch driver because of the
specifications of the bootstrap circuits.
3. Input Capacitor
Mount a low-ESR ceramic input capacitor near the VCC pin to reduce input ripple.
For VCC capacitor, it is recommended to use a ceramic capacitor which has a value of two times or larger than that of the
boot strap capacitor.
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TSZ22111 • 15 • 001
29.Mar.2022 Rev.002
BD2320EFJ-LA BD2320UEFJ-LA
I/O Equivalence Circuits
Pin
No.
Pin
Name
Pin
No.
Pin
Name
Pin Equivalence Circuit
VCC
Pin Equivalence Circuit
1 kΩ
HIN
1
2, 4
3
VCC
VB, VS
HO
5
6
8
HIN
LIN
LO
100 kΩ
GND GND
GND
VB
1 kΩ
LIN
100 kΩ
GND
VS
GND GND
VCC
VB
HO
LO
GND
VS
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29.Mar.2022 Rev.002
13/18
BD2320EFJ-LA BD2320UEFJ-LA
Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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BD2320EFJ-LA BD2320UEFJ-LA
Operational Notes – continued
10.
Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 20. Example of Monolithic IC Structure
11.
Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
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TSZ22111 • 15 • 001
TSZ02201-0Q2Q0A800840-1-2
29.Mar.2022 Rev.002
15/18
BD2320EFJ-LA BD2320UEFJ-LA
Ordering Information
B
D
2
3
2
0
x
E
F
J
-
L
A
E
2
Production Line
Package
EFJ: HTSOP-J8
Product Class
LA: For industrial
applications
Part
Number
Packaging and Forming Specification
E2: Embossed Tape and Reel
None: Production line A
U: Production line B(Note7)
(Note7) For the purpose of improving production efficiency, this product has multi-line configuration. Electric characteristics noted in this datasheet does not differ
between the 2 lines. Production line B is recommended for new product.
Marking Diagram
BD2320EFJ-LA
BD2320UEFJ-LA
HTSOP-J8(TOP VIEW)
HTSOP-J8(TOP VIEW)
Part Number Marking
LOT Number
Part Number Marking
LOT Number
B D 2 3 2 0
D 2 3 2 0 U
Pin 1 Mark
Pin 1 Mark
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29.Mar.2022 Rev.002
16/18
BD2320EFJ-LA BD2320UEFJ-LA
Physical Dimension and Packing Information
Package Name
HTSOP-J8
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BD2320EFJ-LA BD2320UEFJ-LA
Revision History
Date
Revision
001
Changes
New Release
04.Dec.2020
P1 Added the part number for production line B to the header
P17 Added an information for the production line B to Ordering Information
P17 Added a marking diagram for the production line B
002
29.Mar.2022
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.004
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Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号：
BD2327N50100AHF
RF Transformer, 2300MHz Min, 2700MHz Max, CHIP, HALOGEN FREE AND ROHS COMPLIANT
ANAREN
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