BD33IC0MEFJ-C_技术文档

Datasheet

Automotive 1.0 A LDO Regulator

BD33IC0MEFJ-C

General Description

Key Specifications

 Input Power Supply Voltage Range: 2.4 V to 5.5 V

BD33IC0MEFJ-C is a LDO regulator with output

current 1.0 A. The output accuracy is ±3% between Ta

= -40 °C to +125 °C. It has package type: HTSOP-J8

which is small and good heat resistance. Over current

protection (for protecting the IC from destruction by

output short circuit), circuit current ON/OFF switch (for

setting the circuit 0 μA at shutdown mode), and

thermal shutdown circuit (for protecting IC from heat

destruction by over load condition) are all built in. It is

usable for ceramic capacitor and enables to improve

smaller set and long-life.

 Output Voltage:

 Output Current:

 Shutdown Current:

3.3 V

1.0 A (Max)

0 μA (Typ)

 Ambient Temperature Range Ta: -40 °C to +125 °C

Package

HTSOP-J8

W (Typ) x D (Typ) x H (Max)

4.90 mm x 6.00 mm x 1.00 mm

Features



AEC-Q100 Qualified^{(Note 1)}

High Accuracy Reference Voltage Circuit

Built-in Over Current Protection Circuit (OCP)

Built-in Thermal Shutdown Circuit (TSD)

With Shutdown Switch

(Note 1) Grade1

Application



Power Train

Body

Other Automotive Products

Typical Application Circuit

VCC

VO

 Components Externally Connected

Input Capacitor: 1.0 µF ≤ C_IN(Min)

C_O

C_IN

Output Capacitor: 1.0 µF ≤ C_O(Min)^{(Note 2)}

VO_S

EN

(Note 2) Electrolytic, tantalum and ceramic capacitors can be used.

GND EXP-PAD

Figure 1

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

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Contents

General Description..............................................................................................................................................................1

Features ................................................................................................................................................................................1

Application............................................................................................................................................................................1

Key Specifications................................................................................................................................................................1

Package.................................................................................................................................................................................1

Typical Application Circuit....................................................................................................................................................1

Contents................................................................................................................................................................................2

Pin Configuration..................................................................................................................................................................3

Pin Description .....................................................................................................................................................................3

Block Diagram.......................................................................................................................................................................4

Description of Blocks ...........................................................................................................................................................4

Absolute Maximum Ratings..................................................................................................................................................5

Operating Ratings.................................................................................................................................................................5

Electrical Characteristics......................................................................................................................................................5

Thermal Resistance ..............................................................................................................................................................6

Typical Performance Curves.................................................................................................................................................7

Power Dissipation...............................................................................................................................................................16

Application and Implementation.........................................................................................................................................17

Selection of External Components..................................................................................................................................17

Input Pin Capacitor ......................................................................................................................................................17

Output Pin Capacitor....................................................................................................................................................17

Thermal Design...................................................................................................................................................................18

I/O Equivalence Circuits......................................................................................................................................................20

Linear Regulators Surge Voltage Protection......................................................................................................................21

Applying Positive Surge to the Input...........................................................................................................................21

Applying Negative Surge to the input..........................................................................................................................21

Linear Regulators Reverse Voltage Protection...................................................................................................................21

Reverse Input /Output Voltage.....................................................................................................................................21

Protection against Input Reverse Voltage....................................................................................................................22

Protection against Output Reverse Voltage when Output Connect to an Inductor.....................................................23

Operational Notes...............................................................................................................................................................24

1.

2.

3.

4.

5.

6.

7.

8.

Reverse Connection of Power Supply ..................................................................................................................24

Power Supply Lines ..............................................................................................................................................24

Ground Voltage......................................................................................................................................................24

Ground Wiring Pattern ..........................................................................................................................................24

Operating Ratings .................................................................................................................................................24

Inrush Current .......................................................................................................................................................24

Testing on Application Boards..............................................................................................................................24

Inter-pin Short and Mounting Errors.....................................................................................................................24

Unused Input Pins.................................................................................................................................................24

Regarding the Input Pin of the IC..........................................................................................................................25

Ceramic Capacitor.................................................................................................................................................25

Thermal Shutdown Circuit (TSD) ..........................................................................................................................25

Over Current Protection Circuit (OCP)..................................................................................................................25

9.

10.

11.

12.

13.

Ordering Information ..........................................................................................................................................................26

Marking Diagram.................................................................................................................................................................26

Physical Dimension and Packing Information....................................................................................................................27

Revision History..................................................................................................................................................................28

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Pin Configuration

(TOP VIEW)

EXP-PAD

VO 1

VO_S 2

GND 3

N.C. 4

8 VCC

7 N.C.

6 N.C.

5 EN

Figure 2

Pin Description

Pin No.

1

Pin Name

Function

Descriptions

This pin generate 3.3 V output.

VO

Output pin

It is necessary to use a capacitor with a capacitance of 1.0 μF (Min)

or higher between the VO pin and GND. The detail of a selection is

described in page 17.

2

VO_S

Output sense pin

This pin monitors output voltage.

VO_S should be connected to VO.

3

4

GND

N.C.

GND pin

Ground

Non Connection

N.C. pin can be opened or connected to GND, because it isn’t

connected it inside of IC.

Enable the device with high input over the threshold.

5

6

EN

Enable pin

Disable the device with low input under the threshold.

N.C. pin can be opened or connected to GND, because it isn’t

connected it inside of IC.

N.C.

Non Connection

7

8

N.C.

VCC

Non Connection

Input pin

N.C. pin can be opened or connected to GND, because it isn’t

connected it inside of IC.

Input power supply voltage

It is necessary to use a capacitor with a capacitance of 1.0 μF (Min)

or higher between the VCC pin and GND. The detail of a selection

is described in page 17. If the inductance of power supply line is

high, please adjust input capacitor value.

Ground and Heat Sink

This pin should be connected to Analog ground/Power ground.

Reverse

EXP-PAD

GND

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Block Diagram

(V_O+ V_DROP) to 5.5 V

VCC

4

6

8

N.C

CIN 1.0 µF

OCP

N.C 7

AMP

Body

Diode

SOFT

START

-

+

EN

5

3.3 V

VO

1

2

VREF

CO 1.0 µF

VO_S

TSD

GND

3

Figure 3

Description of Blocks

Block Name

Function

Description of Blocks

A logical “HIGH” (V_EN≥ 2.4 V) at the EN enables the device

and “LOW” (V_EN≤ 0.8 V) at the EN disables the device.

EN

TSD

Control Output Voltage ON / OFF

Thermal Shutdown Protection

Reference Voltage

To protect the device from overheating.

If the chip temperature (Tj) reaches 177 °C (Typ),

the output is turned off.

VREF

Generate the Reference Voltage

The Error Amplifier amplifies the difference between the output

voltage and the reference voltage and drive the Output MOSFET

(Power Tr.)

AMP

Error Amplifier

Output voltage rises slowly to reduce overshoot and rash

current. Output rise time is 800 µs (Typ).

SOFT START

OCP

Soft Start

To protect the device from damage caused by over current such

as output short.

If the output current reaches 2.3 A (Typ),

the output current is limited.

Over Current Protection

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Absolute Maximum Ratings

Parameter

Symbol

V_CC

Limits

Unit

V

Power Supply Voltage^{(Note 1)}

EN Voltage^{(Note 2)}

-0.3 to +7.0

-55 to +150

V_EN

V

Storage Temperature Range

Tstg

°C

Maximum Junction Temperature

ESD Withstand Voltage (HBM)^{(Note 3)}

ESD Withstand Voltage (CDM)^{(Note 4)}

Tjmax

V_{ESD_HBM}

V_{ESD_CDM}

+150

±2000

±750

°C

V

Caution 1:Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit

between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit

protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings.

Caution 2:Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may

result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB

with thermal resistance and power dissipation taken into consideration by increasing board size and copper

area so as not to exceed the maximum junction temperature rating.

(Note 1) Not to exceed Tjmax

(Note 2) The start-up orders of power supply (V_CC) and the V_ENdo not influence if the voltage is within the operation power supply voltage range.

(Note 3) ESD susceptibility Human Body Model “HBM”; base on ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF).

(Note 4) ESD susceptibility Charged Device Model “CDM”; base on JEDEC JESD22-C101.

Operating Ratings

Conditions

-

Parameter

Start-up Power Supply Voltage

Input Power Supply Voltage

Operating Temperature

EN Voltage

Symbol

V_CC

Min

2.4

4.1

-40

0.0

1.0

-

Max

-

Unit

V

I_O= 1 A

V_CC

5.5

+125

5.5

1.0

-

V

-

Ta

°C

V

V_EN

Output Current

I_O

A

Input Capacitor^{(Note 5)}

Output Capacitor^{(Note 5)}

Equivalent Series Resistance

C_IN

µF

Ω

Ceramic Capacitor

Output Capacitor

C_O

-

ESR(C_O)

7

(Note 5) Set the value of the capacitor so that it does not fall below the minimum value.

Take into consideration the temperature characteristics, DC device characteristics and degradation with time.

Electrical Characteristics (Unless otherwise noted, Ta = -40 °C to +125 °C, V_EN= 3 V, V_CC= 5.0 V)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Shutdown Current

I_SD

-

0

5

μA

V_EN= 0 V, OFF mode

Bias Current

I_CC

Reg.I

-

400

25

700

50

μA

-

Line Regulation

Load Regulation

Dropout Voltage

Output Voltage

EN Low Voltage

EN High Voltage

EN Bias Current

-

mV

V_CC= (V_O+ 0.6 V) to 5.5 V

Reg.I_O

V_DROP

V_O

-

25

75

mV

V

I_O= 0 A to 1 A

0.40

V_CC= 3.3 V, I_O= 1 A

-

3.201

0

0.90

3.399

0.8

5.5

9

3.300

V

I_O= 0 mA

V_EN(Low)

V_EN(High)

I_EN

-

2.4

-

V

3

µA

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Thermal Resistance^{(Note 1)}

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s^{(Note 3)}

2s2p^{(Note 4)}

HTSOP-J8

Junction to Ambient

Junction to Top Characterization Parameter^{(Note 2)}

θ_JA

206.4

21

45.2

13

°C/W

Ψ_JT

(Note 1) Based on JESD51-2A(Still-Air).

(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside

surface of the component package.

(Note 3) Using a PCB board based on JESD51-3.

(Note 4) Using a PCB board based on JESD51-5, 7.

Layer Number of

Measurement Board

Material

FR-4

Board Size

Single

114.3 mm x 76.2 mm x 1.57 mmt

Top

Copper Pattern

Thickness

Footprints and Traces

70 μm

Layer Number of

Measurement Board

Thermal Via^{(Note 5)}

Material

FR-4

Board Size

114.3 mm x 76.2 mm x 1.6 mmt

2 Internal Layers

Pitch

Diameter

4 Layers

1.20 mm

Φ0.30 mm

Top

Copper Pattern

Bottom

Thickness

Copper Pattern

Thickness

Copper Pattern

Thickness

Footprints and Traces

70 μm

74.2 mm x 74.2 mm

35 μm

74.2 mm x 74.2 mm

70 μm

(Note 5) This thermal via connects with the copper pattern of all layers.

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Typical Performance Curves

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

V_O

300 mV/div

I_O

0.5 A/div

10.0 μs/div

Figure 4. Transient Response

(1 mA→1000 mA, Ta = -40 °C)

Figure 5. Transient Response

(1 mA→1000 mA, Ta = +25 °C)

V_O

300 mV/div

I_O

0.5 A/div

100 µs/div

10.0 μs/div

Figure 6. Transient Response

(1 mA→1000 mA, Ta = +125 °C)

Figure 7. Transient Response

(1000 mA→1 mA, Ta = -40 °C)

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

V_O

300 mV/div

I_O

0.5 A/div

100 µs/div

Figure 8. Transient Response

Figure 9. Transient Response

(1000 mA→1 mA, Ta = +25 °C)

(1000 mA→1 mA, Ta = +125 °C)

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

V_EN

2 V/div

V_EN

2 V/div

V_CC

2 V/div

V_CC

2 V/div

V_O

2 V/div

V_O

2 V/div

400 μs/div

Figure 11. VCC Rise Response

Figure 10. VCC Rise Response

(Ta = -40 °C)

(Ta = +25 °C)

V_EN

2 V/div

V_CC

2 V/div

V_CC

2 V/div

V_O

2 V/div

V_O

2 V/div

400 μs/div

100 μs/div

Figure 12. VCC Rise Response

(Ta = +125 °C)

Figure 13. VCC Fall Response

(Ta = -40 °C)

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

V_EN

2 V/div

V_CC

2 V/div

V_CC

2 V/div

V_O

2 V/div

V_O

2 V/div

100 μs/div

Figure 15. VCC Fall Response

(Ta = +125 °C)

Figure 14. VCC Fall Response

(Ta = +25 °C)

V_EN

2 V/div

V_CC

2 V/div

V_O

2 V/div

V_O

2 V/div

400 μs/div

Figure 16. EN Rise Response

(Ta = -40 °C)

Figure 17. EN Rise Response

(Ta = +25 °C)

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

V_EN

2 V/div

V_EN

2 V/div

V_CC

2 V/div

V_CC

2 V/div

V_O

2 V/div

400 μs/div

20.0 ms/div

Figure 18. EN Rise Response

(Ta = +125 °C)

Figure 19. EN Fall Response

(Ta = -40 °C)

V_EN

2 V/div

V_CC

2 V/div

V_CC

2 V/div

V_O

2 V/div

V_O

2 V/div

20.0 ms/div

Figure 20. EN Fall Response

(Ta = +25 °C)

Figure 21. EN Fall Response

(Ta = +125 °C)

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

3.40

3.38

3.36

3.34

3.32

3.30

3.28

3.26

3.24

3.22

800

700

600

500

400

300

200

100

0

3.20

-40 -25 -10 5 20 35 50 65 80 95 110125

Ambient Temparature:Ta[°C]

Figure 22. Output Voltage vs Ambient Temparature

(I_O= 0 mA)

Figure 23. Bias Current vs Ambient Temparature

5.0

4.0

3.0

2.0

1.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

-40 -25 -10 5 20 35 50 65 80 95 110125

Ambient Tempararute:Ta[°C]

Ambient Temparature:Ta[°C]

Figure 24. Shutdown Current vs Ambient Temparature

Figure 25. EN Bias Current vs Ambient Temparature

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

3.35

5.0

4.0

3.0

2.0

1.0

0.0

Ta=-40˚C

3.34

Ta=+25˚C

3.33

Ta=+125˚C

3.32

3.31

3.30

3.29

3.28

3.27

3.26

3.25

0

200

400

600

800

1000

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Power Supply Voltage:V_CC[V]

Output Current:I_O[mA]

Figure 26. Output Voltage vs Output Current

Figure 27. Shutdown Current vs Power Supply Voltage

3.50

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.00

2.50

2.00

1.50

1.00

0.50

0.00

Ta=-40˚C

Ta=+25˚C

Ta=+125˚C

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Power Supply Voltage:V_CC[V]

125

150

175

200

Ambient Temparature:Ta[°C]

Figure 28. Output Voltage vs Power Supply Voltage

Figure 29. Output Voltage vs Ambient Temperature

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

3.5

900

800

700

600

500

400

300

200

100

0

3

2.5

2

Ta=-40°C

Ta=+25°C

Ta=+125°C

1.5

1

0.5

0

-40 -25 -10 5 20 35 50 65 80 95 110125

0

1

2

3

Ambient Temparature:Ta[°C]

Output Current:I_O[A]

Figure 30. Output Voltage vs Output Current

Figure 31. Dropout Voltage vs Ambient Temperature

(V_CC= 5 V, V_{O_S}= 0 V, I_O= 1 A)

10

1

700

600

500

400

300

0.1

Stable Region

200

100

0

Ta=-40°C

Ta=+25°C

Ta=+125°C

0.01

0.001

0

0.2

0.4

0.6

0.8

1

0

0.2

0.4

0.6

0.8

1

Output Current:I_O[A]

Output Current:Io[A]

Figure 32. Equivalent Series Resistance vs Output Current

Figure 33. Bias Current vs Output Current

[-40 °C ≤ Ta ≤ +125 °C, (V_O+ V_DROP) ≤ V_CC≤ 5.5 V]

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Typical Performance Curves - continued

(Unless otherwise noted, V_EN= 3 V, V_CC= 5.0 V, C_IN= C_O= 1 µF)

1200

1000

800

600

400

200

0

70

60

50

40

30

Ta=-40°C

Ta=+25°C

Ta=+125°C

20

10

0

Ta=-40°C

Ta=+25°C

Ta=+125°C

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

Frequency[kHz]

Output Current:I_O[A]

Figure 34. PSRR vs Frequency

(ein = 50 mVpp, Io = 100 mA, Co = 1 µF)

Figure 35. Dropout Voltage vs Output Current

(V_CC= 3.3 V, V_{O_S}= 0 V)

1200

Ta=-40°C

Ta=+25°C

Ta=+125°C

1000

800

600

400

200

0

1000

800

600

400

200

0

Ta=+25°C

Ta=+125°C

0

0.2

0.4

0.6

0.8

1

0

0.2

0.4

0.6

0.8

1

Output Current:I_O[A]

Figure 36. Dropout Voltage vs Output Current

(V_CC= 4.0 V, V_{O_S}= 0 V)

Figure 37. Dropout Voltage vs Output Current

(V_CC= 5.5 V, V_{O_S}= 0 V)

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Power Dissipation

■HTSOP-J8

IC mounted on ROHM standard board based on JEDEC.

1: 1-layer PCB

3.5

(Copper foil area on the reverse side of PCB: 0 mm × 0 mm)

Board material: FR4

Board size: 114.3 mm × 76.2 mm × 1.57 mmt

Top copper foil: ROHM recommended footprint

+ wiring to measure, 2 oz. copper.

3

2.5

2

②2.70 W

2: 4-layer PCB

(Copper foil area on the reverse side of PCB: 74.2 mm × 74.2 mm)

Board material: FR4

Board size: 114.3 mm × 76.2 mm × 1.60 mmt

Top copper foil: ROHM recommended footprint

+ wiring to measure, 2 oz. copper.

1.5

1

①0.60 W

2 inner layers copper foil area of PCB:

74.2 mm × 74.2 mm, 1 oz. copper.

Copper foil area on the reverse side of PCB:

74.2 mm × 74.2 mm, 2 oz. copper.

0.5

0

25

50

75

100

125

150

Condition 1: θ_JA= 206.4 °C/W, Ψ_JT(top center) = 21 °C/W

Condition 2: θ_JA= 45.2 °C/W, Ψ_JT(top center) = 13 °C/W

Ambient Temperature: Ta[ꢀC]

Figure 38. HTSOP-J8 Power Dissipation Graph

(Reference Data)

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Application and Implementation

Notice: The following information is provided only as reference for application and implementation, and does not guarantee

its operation on specific function, accuracy or the external components in the application. On application, after a

thorough confirmation such as characteristics of the capacitor, conduct the appropriate verification necessary in the

actual application and design with sufficient margin.

Selection of External Components

Input Pin Capacitor

When battery is distant or when input-side impedance is high, a high capacitance capacitor is required to prevent line

voltage drop. Select an input pin capacitor depending on the line impedance between power supply smoothing circuit and

the input pin. In this case, although the capacitance value setting will vary according to application, in general a capacitor

with capacitance value of 1.0 µF (Min) is recommended.

In addition, to prevent influence to the regulator characteristic from the external capacitor character variation, all input pin

capacitor mentioned above is recommended to have good DC bias characteristics and temperature characteristics

(approximately ±15%) with superior EIA standard high voltage breakdown. Mounting layout is recommended to be near

the input pin as much as possible and capacitor shall be on identical mounting side.

Output Pin Capacitor

In order to stabilize the operation of the regulator, capacitor with capacitance value ≥ 1.0 µF (Min) and ESR up to 7 Ω

(Max) must be inserted between output pin and GND pin for oscillation prevention.

Select an appropriate output pin capacitance value and ESR to improve the transient response of the regulator and the

stability of control loop. The correlation of output capacitance value and ESR is as shown in the graph on the Figure 32

(ESR stability region). As described in the graph, this product is designed to achieve a stable regulator operation with

capacitance value from 1.0 µF and with ESR value approximately within 7 Ω. (frequency bandwidth within approximately

10 kHz to 100 kHz range).

Provided however, the stable domain of this graph is based on the measurement result from single IC on our board with

resistive load. In the actual environment, stability is affected by wire impedance on the board, input power supply

impedance and load impedance, therefore we strongly recommend thorough verification in the actual usage environment.

For input voltage fluctuation or load fluctuation in frequency domain which is beyond regulator control loop

responsiveness, responsiveness in this case generally depends on capacitance value of the output pin capacitor.

Therefore, capacitance value of 1.0 µF (Min) or more for output pin capacitor is recommended. By insertion of bigger

capacitance value, further improvement of responsiveness in a high frequency domain is expected. Various types of

capacitors can be used for this high capacity output pin capacitor which includes electrolytic capacitor, electro-conductive

polymer capacitor and tantalum capacitor. Provided however, depending on the type of capacitor, ESR (≤ 7 Ω) absolute

value range, increase of ESR value and decrease of capacitance value in lower temperature needs to be taken into

consideration.

As with the input pin capacitor, in order to avoid the influence on the regulator characteristics due to variations in the

components of the external capacitor, DC bias characteristics and temperature characteristics are good for all of the

above output pin capacitors and mounting layout position (about ± 15% , X7R, X8R), it is recommended to select a

capacitor of an excellent EIA standard high withstanding voltage, place it as close to the output pin as possible so as not

to be affected by mounting impedance etc, and lay it on the same mounting surface.

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Thermal Design

Within this product, the power consumption is decided by the dropout voltage condition, the load current and the circuit

current. Refer to Package Data illustrated in Figure 38 when using the IC in an environment of Ta ≥ 25 °C. Even if the

ambient temperature Ta is at 25 °C, depending on the input voltage and the load current, chip junction temperature can be

very high. Consider the design to be Tj ≤ Tjmax = 150 °C in all possible operating temperature range. On the reverse side

of the package (HTSOP-J8) there is exposed heat pad for improving the heat dissipation.

Should by any condition the maximum junction temperature Tjmax = 150 °C rating be exceeded by the temperature

increase of the chip, it may result in deterioration of the properties of the chip. The thermal impedance in this specification is

based on recommended PCB and measurement condition by JEDEC standard. Verify the application and allow sufficient

margins in the thermal design by the following method is used to calculate the junction temperature Tj.

Tj can be calculated by either of the two following methods.

1.

The following method is used to calculate the Tj: Junction Temperature from Ta: Ambient Temperature.

Tj = Ta + P_C× θ_JA

[°C]

Where:

Tj

: Junction Temperature

Ta

P_C

θ_JA

: Ambient Temperature

: Power Consumption

: Thermal Impedance

(Junction to Ambient)

2.

The following method is also used to calculate the Tj: Junction Temperature from T_T: top Center of Case’s (mold)

Temperature.

Tj = T_T+ P_C× Ψ_JT

[°C]

Where:

Tj

: Junction Temperature

T_T

P_C

: Top Center of Case’s (mold) Temperature

: Power Consumption

Ψ_JT

: Thermal Characteristic Parameter

(Junction to Top Center of Case)

The following method is used to calculate the power consumption Pc (W) from input and output voltage, output current

and circuit current.

Pc = (V_CC- V_O) × I_O+ V_CC× I_CC

[W]

Where:

P_C

: Power Consumption

: Input Voltage

V_CC

V_O

I_O

: Output Voltage

: Output Current

: Circuit Current

I_CC

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Thermal Design – continued

If V_CC= 5.0 V, V_O= 3.3 V, I_O= 0.1 A, I_CC= 400 μA, the power consumption Pc can be calculated as follows:

P_C= (V_CC- V_O) × I_O+ V_CC× I_CC

= (5.0 V – 3.3 V) × 0.1 A + 5.0 V × 400 μA

= 0.172 W

At the ambient temperature Tamax = 125 °C, the thermal Impedance (Junction to Ambient) θ_JA= 45.2 °C/W (4-layer PCB),

Tj = Tamax + P_C× θ_JA

= 125 °C + 0.172 W × 45.2 °C/W

= 132.8 °C

When operating the IC, the top center of case’s (mold) temperature T_T= 100 °C, Ψ_JT= 13 °C/W (4-layer PCB),

Tj = T_T+ P_C× Ψ_JT

= 100 °C + 0.172 W × 13 °C/W

= 102.2 °C

For optimum thermal performance, it is recommended to expand the copper foil area of the board, increasing the layer and

thermal via between thermal land pad.

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I/O Equivalence Circuits

PIN8 : VCC

PIN1 : VO

PIN2 : VO_S

PIN5 : EN

PIN8 : VCC

PIN5 : EN

PIN2 : VO_S

520 kΩ (Typ)

75 kΩ (Typ)

24 kΩ (Typ)

480 kΩ (Typ)

PIN1 : VO

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Linear Regulators Surge Voltage Protection

In the following, it explains the protection method for ICs when surge exceed absolute maximum ratings is applied to the

input.

Applying Positive Surge to the Input

If the positive surge that exceeds absolute maximum ratings 7 V is applied to the input, a Zener Diode should be

placed to protect the device in between the IN and the GND as shown in the figure 39.

IN

OUT

V_IN

V_OUT

C_OUT

GND

D₁

C_IN

Figure 39. Surges Higher than 7 V is Applied to the Input

Applying Negative Surge to the input

If the negative surge that exceeds absolute maximum ratings -0.3 V is applied to the input, a Schottky Diode should be

place to protect the device in between the IN and the GND as shown in the figure 40.

IN

OUT

V_IN

V_OUT

C_OUT

GND

D₁

C_IN

Figure 40. Surges Lower than -0.3 V is Applied to the Input

Linear Regulators Reverse Voltage Protection

A linear regulator integrated circuit (IC) requires that the input voltage is always higher than the output voltage. Output

voltage, however, may become higher than the input voltage under specific situations or circuit configurations, and that

reverse voltage and current may cause damage to the IC. A reverse polarity connection or certain inductor components can

also cause a polarity reversal between the input and output pins. In the following, it explains the protection method for ICs

when a condition of voltage reverses.

Reverse Input /Output Voltage

In a MOS linear regulator, a body diode exists as a parasitic element in the drain-source junction portion of its power

MOSFET. Reverse input/output voltage triggers the current flow from the output to the input through the body diode.

The inverted current may damage or destroy the semiconductor elements of the regulator since the effect of the

parasitic body diode is not guaranteed the operation (Figure 41).

I_R

V_OUT

V_IN

Error

AMP.

V_REF

Figure 41. Reverse Current Path in a MOS Linear Regulator

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Reverse Input /Output Voltage - continued

An effective solution to this is to connect an external bypass diode connected in-between the input and output to

prevent the reverse current from flowing inside the IC (see Figure 42). Note that the bypass diode must be turned on

before the internal circuit of the IC. Bypass diodes in the internal circuits of MOS linear regulators must have low

forward voltage V_F. When the reverse current from this bypass diode is large, leakage current of the diode flows a lot

from the input to the output even if it turns off the output with IC the shutdown function; therefore, it is necessary to

choose one that has a small reverse current. Specifically, select a diode with a rated reverse voltage greater than the

input to output voltage differential and rated forward current greater than the reverse current.

D₁

IN

OUT

V_IN

V_OUT

C_OUT

GND

C_IN

Figure 42. Bypass Diode for Reverse Current Diversion

The lower forward voltage (V_F) of Schottky barrier diodes cater to requirements of MOS linear regulators, however the

main drawback is that their reverse current (I_R), which is relatively high. So, one with a low reverse current is

recommended when choosing a Schottky diode. The I_Rcharacteristics versus temperatures show increases at higher

temperatures. It is recommended that confirming the datasheet for Schottky barrier diodes.

If V_INis open in a circuit as shown in the following Figure 43 with its input/output voltage being reversed, the only

current that flows in the reverse current path is the bias current of the IC. Because the amperage is too low to damage

or destroy the parasitic element, a reverse current bypass diode is not required for this type of circuit.

ON→OFF

IBIAS

IN

OUT

V_OUT

C_OUT

V_IN

GND

CIN

Figure 43. Open V_IN

Protection against Input Reverse Voltage

When connecting the power supply to the input, if plus and minus are inadvertently connected in reverse, or when

there is a possibility that the input may become lower than the GND pin, it is necessary to prevent the electrostatic

breakdown prevention diode between the IC input pin and the GND pin A large current may flow, so the IC may be

destroyed (see Figure 44).

A Schottky barrier diode or rectifier diode connected in series with the power supply as shown in Figure 45 is the

simplest solution to prevent this. There is a power loss calculated as V_Fx I_OUT,as the forward voltage V_Fof the diode

drops in a correct connection. The V_Fof a Schottky barrier diode is lower than that of a rectifier diode gives a slightly

smaller power loss. Because diodes generate heat, select a diode that has enough allowance in power dissipation. A

reverse connection allows a negligible reverse current to flow in the diode.

VIN

V_OUT

C_OUT

GND

IN

OUT

D1

-

IN

OUT

V_OUT

C_OUT

VIN

GND

CIN

+

GND

Figure 44. Current Path in Reverse Input Connection

Figure 45. Protection against Reverse Polarity 1

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Protection against Input Reverse Voltage - continued

Figure 46 shows a circuit in which a P-channel MOSFET is connected in series with the power. The diode located in

the drain-source junction portion of the MOSFET is a body diode (parasitic element). Pch MOSFET turns on in a

correct connection. The voltage drop is calculated by multiplying the ON resistance and the output current IOUT.

Therefore, it is smaller than the voltage drop by the diode (see Figure 46) and results in less of a power loss. No

current flows in a reverse connection where the MOSFET remains off.

If the voltage taking account of derating is greater than the voltage rating of MOSFET gate-source junction, lower the

gate-source junction voltage by connecting voltage dividing resistors as shown in Figure 47.

Q1

VIN

Q1

V_OUT

IN

OUT

IN

OUT

VIN

V_OUT

C_OUT

R1

GND

R2

CIN

C_OUT

CIN

Figure 46. Protection against Reverse Polarity 2

Figure 47. Protection against Reverse Polarity 3

Protection against Output Reverse Voltage when Output Connect to an Inductor

If the output load is inductive, electrical energy accumulated in the inductive load is released to the ground upon the

output voltage turning off. There is a diode between the IC output pin and ground pin for preventing electrostatic

breakdown, in which a large current flows that could destroy the IC. To prevent this, connect a Schottky barrier diode in

parallel with the diode (see Figure 48).

Further, if a long wire is in use for the connection between the output pin of the IC and the load, observe the waveform

on an oscilloscope, since it is possible that the load becomes inductive. An additional diode is needed for a motor load

because a similar electric current flows by its counter electromotive force.

VOUT

VIN

OUT

IN

GND

D1

CIN

XLL

COUT

GND

Figure 48. Current Path in Inductive Load (Output: Off)

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Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

3. Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Operating Ratings

The function and operation of the IC are guaranteed within the range specified by the operating ratings. The

characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics.

6. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may

flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power

supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,

and routing of connections.

7. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

8. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)

and unintentional solder bridge deposited in between pins during assembly to name a few.

9. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

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Operational Notes – continued

10. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should

be avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P

P⁺

N

P⁺

P

P⁺

N

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Figure 49. Example of monolithic IC structure

11. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

12. Thermal Shutdown Circuit (TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj

falls below the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

13. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This

protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioning of the protection circuit.

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Ordering Information

B

D

3

I

C

0 M E F J

-

C E 2

Voltage

resist-

ance

Part

Number

Output

voltage

Output

current

Characteristic Package

Packaging and

forming specification

C: Automotive Grade

E2: Emboss tape reel

EFJ:HTSOP-J8

M:Automotive

I:7 V

33: 3.3 V

C0:1.0 A

Marking Diagram

HTSOP-J8 (TOP VIEW)

Part Number Marking

LOT Number

3 3 I C 0 C

Pin 1 Mark

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Physical Dimension and Packing Information

Package Name

HTSOP-J8

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Revision History

Date

Revision

001

Changes

26.Sep.2018

New release

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Notice

Precaution on using ROHM Products

(Note 1)

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment

,

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,

bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales

representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any

ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.

Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the

use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our

Products under any special or extraordinary environments or conditions (as exemplified below), your independent

verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PAA-E

Rev.003


型号：	BD33IC0MEFJ-C
厂家：	ROHM
描述：	BD33IC0MEFJ-C是可提供1.0A输出电流的稳压器。输出精度为Ta=-40°C～+125°C下±3%。封装组件采用小型且散热性优良的HTSOP-J8。本机型内置用于防止因输出短路等发生IC破坏的过流保护电路、关断时使电路电流为0μA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。开关电容器陶瓷电容器稳压器
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BD33IC0MEFJ-C [ROHM]

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