BD433M2EFJ-C [ROHM]
BD4xxM2-C系列是45V耐压、输出电压精度±2%、输出电流200mA、消耗电流40µA的低待机电流稳压器,是输出电压为3.3V或5.0V的固定型产品。本IC适合用来降低蓄电池直连系统的消耗电流。可选择有无输出关断功能,相应产品在向CTL端子施加HIGH电压时元件输出ON,施加LOW电压时元件输出OFF。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。We recommend BD433U2EFJ-C for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.;型号: | BD433M2EFJ-C |
厂家: | ROHM |
描述: | BD4xxM2-C系列是45V耐压、输出电压精度±2%、输出电流200mA、消耗电流40µA的低待机电流稳压器,是输出电压为3.3V或5.0V的固定型产品。本IC适合用来降低蓄电池直连系统的消耗电流。可选择有无输出关断功能,相应产品在向CTL端子施加HIGH电压时元件输出ON,施加LOW电压时元件输出OFF。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。We recommend BD433U2EFJ-C for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line. 电池 过电流保护 电容器 陶瓷电容器 稳压器 |
文件: | 总37页 (文件大小:1442K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet
200-mA 3.3-V or 5.0-V Output
LDO Regulators
BD4xxM2-C Series
●General Description
●Features
The BD4xxM2-C series are low quiescent regulators
featuring 45 V absolute maximum voltage, and output
voltage accuracy of ±2 % ( 3.3 V or 5.0 V: Typ.), 200 mA
output current and 40 μA (Typ.) current consumption.
These regulators are therefore ideal for applications
requiring a direct connection to the battery and a low
current consumption.
Qualified for Automotive Applications
Wide Temperature Range:
Wide Operating Input Range:
Low Quiescent Current:
Output Current:
-40 °C to +150 °C
3.0 V to 42 V
40 μA (Typ.)
200 mA
High Output Voltage Accuracy:
Output Voltage:
±2 %
3.3 V or 5.0 V (Typ.)
A logical “HIGH” at the CTL pin enables the device and
“LOW” at the CTL pin not enables the device.
(Only W: Includes switch)
Ceramic capacitors can be used for compensation of the
output capacitor phase. Furthermore, these ICs also
feature overcurrent protection to protect the device from
damage caused by short-circuiting and an integrated
thermal shutdown to protect the device from overheating
at overload conditions.
Enable Input (Only W: Includes Enable Input)
Over Current Protection (OCP)
Thermal Shutdown Protection (TSD)
AEC-Q100 Qualified
●Packages
EFJ: HTSOP-J8
W (Typ.) x D (Typ.) x H (Max.)
4.90 mm x 6.00 mm x 1.00 mm
FP3: SOT223-4F
6.53 mm x 7.00 mm x 1.80 mm
Figure 1. Package Outlook
●Applications
Automotive
(body, audio system, navigation system, etc.)
●Typical Application Circuits
Components externally connected: 0.1 µF ≤ CIN, 10 µF ≤ COUT (Typ.)
*Electrolytic, Tantalum and Ceramic capacitors can be used.
4:GND
8:VCC
7:N.C.
6:N.C.
5:GND
BD4xxM2WFP3-C
CIN
BD4xxM2EFJ-C
1:VCC
2:CTL
3:VOUT
1:VOUT 2:N.C.
3:N.C.
4:N.C.
COUT
CIN
COUT
BD433 / 450M2WFP3-C
BD433 / 450M2WEFJ-C
BD433 / 450M2EFJ-C
BD433 / 450M2FP3-C
HTSOP-J8
SOT223-4F
Figure 2. Typical Application Circuits
○Product structure:Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
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BD4xxM2-C Series
●Ordering Information
B
D
4
x
x
M
2
W
E
F
J -
C
E 2
Part
Number
Output Voltage
Output Current
2: 200 mA
Enable Input
Package
Packaging and Forming
Specification
33: 3.3 V
50: 5.0 V
W: Includes
Enable
EFJ: HTSOP-J8
FP3: SOT223-4F
E2: Embossed Tape and Reel
Input
●Lineup
Output Current
Output Voltage
(Typ.)
Enable
Package Type
Orderable Part Number
Ability
Input *1
SOT223-4F
HTSOP-J8
SOT223-4F
HTSOP-J8
SOT223-4F
HTSOP-J8
SOT223-4F
HTSOP-J8
BD433M2WFP3-CE2
BD433M2WEFJ-CE2
BD433M2FP3-CE2
BD433M2EFJ-CE2
BD450M2WFP3-CE2
BD450M2WEFJ-CE2
BD450M2FP3-CE2
BD450M2EFJ-CE2
○
-
○
-
3.3 V
200 mA
5.0 V
*1 ○: Includes Enable Input.
-: Not includes Enable Input.
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BD4xxM2-C Series
●Pin Configurations
HTSOP-J8
(Top View)
SOT223-4F
(Top View)
4 (FIN)
1
2
3
Figure 3. Pin Configuration
●Pin Descriptions
■BD433 / 450M2WEFJ-C
■BD433 / 450M2WFP3-C
Pin No.
Pin Name
VOUT
N.C.
Function
Pin No.
Pin Name
VCC
Function
1
2
3
4
5
6
7
8
Output pin
Not Connected
Not Connected
Not Connected
Ground Pin
1
Supply Voltage Input Pin
Output Control Pin
Output Pin
2
3
CTL
N.C.
VOUT
GND
N.C.
4 (FIN)
Ground Pin
GND
N.C.
Not Connected
Output Control Pin
Supply Voltage Input Pin
CTL
VCC
■BD433 / 450M2EFJ-C
■BD433 / 450M2FP3-C
Pin No.
Pin Name
VOUT
N.C.
Function
Output Pin
Pin No.
Pin Name
VCC
Function
Supply Voltage Input Pin
Ground Pin
1
2
3
4
5
6
7
8
1
Not Connected
Not Connected
Not Connected
Ground Pin
2
3
GND
N.C.
VOUT
GND
Output Pin
N.C.
4 (FIN)
Ground Pin
GND
N.C.
Not Connected
Not Connected
Supply Voltage Input Pin
N.C.
VCC
* N.C. Pin is recommended to short with GND.
* N.C. Pin can be open because it isn’t connect it inside of IC.
* Exposed die pad is need to be connected to GND.
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BD4xxM2-C Series
●Block Diagrams
■BD433 / 450M2WEFJ-C
■BD433 / 450M2EFJ-C
GND (5PIN)
VCC (8PIN)
N.C. (7PIN)
N.C. (6PIN)
PREREG
VREF
DRIVER
OCP
TSD
VOUT (1PIN)
N.C. (2PIN)
N.C. (3PIN)
N.C. (4PIN)
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BD4xxM2-C Series
■BD433 / 450M2WFP3-C
GND (FIN)
CTL
PREREG
VREF
DRIVER
OCP
TSD
VCC (1PIN)
CTL (2PIN)
VOUT (3PIN)
■BD433 / 450M2FP3-C
GND (FIN)
PREREG
VREF
DRIVER
OCP
TSD
VCC (1PIN)
GND (2PIN)
VOUT (3PIN)
Figure 4. Block Diagrams
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BD4xxM2-C Series
●Description of Blocks
Block Name
Function
Description of Blocks
A logical “HIGH” ( ≥ 2.8 V ) at the CTL pin enables the device
and “LOW” ( ≤ 0.8 V ) at the CTL pin not enable the device.
CTL *1
PREREG
TSD
Control Output Voltage ON/OFF
Internal Power Supply
Power Supply for Internal Circuit
To protect the device from overheating.
If the chip temperature ( Tj ) reaches ca. 175 °C ( Typ. ),
the output is turned off.
Thermal Shutdown Protection
Reference Voltage
VREF
Generate the Reference Voltage
Drive the Output MOS FET
DRIVER
OCP
Output MOS FET Driver
Over Current Protection
To protect the device from damage caused by over current.
If the output current reaches ca. 550 mA ( Typ.),
the output is turned off.
*1 Applicable for product with Enable Input.
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BD4xxM2-C Series
●Absolute Maximum Ratings
Parameter
Symbol
VCC
CTL
Ratings
-0.3 to +45.0
-0.3 to +45.0
-0.3 to +8.0
0.75
Unit
V
*1
*2
Supply Voltage
Output Control Voltage
Output Voltage
V
VOUT
Pd
V
*3
*3
HTSOP-J8
SOT223-4F
W
W
°C
°C
°C
V
Power Dissipation
Pd
0.60
Tj
Junction Temperature Range
Storage Temperature Range
Maximum Junction Temperature
ESD withstand Voltage (HBM)
-40 to +150
-55 to +150
+150
Tstg
Tjmax
VESD,HBM
*4
±2000
*1
*2
Do not exceed Pd.
Applicable for product with Enable Input.
The start up orders of power supply (VCC) and the CTL pin do not influence if the voltage is within the operation power supply voltage range.
HTSOP-J8 mounted on 114.3 mm x 76.2 mm x 1.6 mmt Glass-Epoxy PCB based on JEDEC. If Ta ≧25 °C, reduce by 6.0 mW/°C.
(1-layer PCB: Copper foil area on the reverse side of PCB:0 mm x 0 mm)
SOT223-4F mounted on 114.3 mm x 76.2 mm x 1.6 mmt Glass-Epoxy PCB based on JEDEC. If Ta ≧25 °C, reduce by 4.8 mW/°C.
(1-layer PCB: Copper foil area on the reverse side of PCB:0 mm x 0 mm)
*3
*4
ESD susceptibility Human Body Model “HBM”
●Operating Conditions (-40 °C ≤ Tj ≤ +150 °C)
Parameter
Supply Voltage ( IOUT ≤ 200 mA )
Supply Voltage ( IOUT ≤ 100 mA )
Supply Voltage ( IOUT ≤ 200 mA )
Supply Voltage ( IOUT ≤ 100 mA )
Output Control Voltage
Symbol
VCC
VCC
VCC
VCC
CTL
Min.
4.3
3.9
5.8
5.5
0
Max.
42.0
42.0
42.0
42.0
42.0
-
Unit
V
*1
*1
*2
*2
*3
*4
V
V
V
V
Start-Up Voltage
VCC
IOUT
Tj
V
3.0
0
Output Current
mA
°C
200
Junction Temperature Range
-40
+150
*1
*2
*3
*4
BD433M2WEFJ-C / BD433M2WFP3-C / BD433M2EFJ-C / BD433M2FP3-C
BD450M2WEFJ-C / BD450M2WFP3-C / BD450M2EFJ-C / BD450M2FP3-C
Applicable for product with Enable Input
When IOUT = 0 mA
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BD4xxM2-C Series
●Thermal Resistance
Parameter
Symbol
Min.
Max.
Unit
HTSOP-J8 Package
Junction to Ambient
*1
*1
θja
θjc
43.1
10
-
-
°C/W
°C/W
Junction to Case (bottom)
SOT223-4F Package
Junction to Ambient
*2
*2
θja
θjc
83.3
17
-
-
°C/W
°C/W
Junction to Case (bottom)
*1
*2
HTSOP-J8 mounted on 114.3 mm x 76.2 mm x 1.6 mmt Glass-Epoxy PCB based on JEDEC.
(4-layer PCB: Copper foil on the reverse side of PCB:74.2 mm x 74.2 mm)
SOT223-4F mounted on 114.3 mm x 76.2 mm x 1.6 mmt Glass-Epoxy PCB based on JEDEC.
(4-layer PCB: Copper foil on the reverse side of PCB:74.2 mm x 74.2 mm)
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BD4xxM2-C Series
●Electrical Characteristics
(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, CTL = 5 V(*1), IOUT = 0 mA.
The typical value is defined at Tj = 25 °C.)
Limit
Parameter
Symbol
Ishut *1
Unit
μA
μA
μA
V
Conditions
Min.
Typ.
Max.
5.0
CTL = 0 V,
Shut Down Current
-
2.0
Tj ≤ 125 °C
IOUT = 0 mA,
-
-
40
90
Tj ≤ 125 °C
Circuit Current
Output Voltage
Icc
IOUT ≤ 200 mA,
Tj ≤ 150 °C
40
150
5.10
5.10
3.37
3.37
0.35
0.45
-
6 V ≤ VCC ≤ 42 V,
0 mA ≤ IOUT ≤ 50 mA
6 V ≤ VCC ≤ 42 V,
IOUT ≤ 200 mA
6 V ≤ VCC ≤ 42 V,
0 mA ≤ IOUT ≤ 50 mA
6 V ≤ VCC ≤ 42 V,
IOUT ≤ 200 mA
4.90
4.80
3.23
3.16
-
5.00
5.00
3.30
3.30
0.16
0.20
65
VOUT *2
VOUT *3
V
V
V
VCC = VOUT x 0.95 (= 4.75V: Typ.),
IOUT = 100 mA
ΔVd *2
ΔVd *3
R.R.
V
Dropout Voltage
Ripple Rejection
VCC = VOUT x 0.95 (= 3.135V: Typ.),
IOUT = 100 mA
-
V
f = 120 Hz, ein = 1 Vrms,
IOUT = 100 mA
55
dB
Line Regulation
Reg.I
Reg.L
TSD
-
-
-
10
10
30
30
-
mV
mV
°C
8 V ≤ VCC ≤ 16 V
10 mA ≤ 100 mA
Tj at TSD ON
Load Regulation
Thermal Shut Down
175
*1 Applicable for product with Enable Input.
*2 For BD450M2WEFJ-C / BD450M2WFP3-C / BD450M2EFJ-C / BD450M2FP3-C
*3 For BD433M2WEFJ-C / BD433M2WFP3-C / BD433M2EFJ-C / BD433M2FP3-C
●Electrical Characteristics ( Enable function * Applicable for product with Enable Input. )
(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, IOUT = 0 mA. The Typical value is defined at Tj = 25 °C.)
Limit
Parameter
Symbol
Unit
Conditions
ACTIVE MODE
Min.
2.8
Typ.
Max.
-
-
V
V
CTL ON Mode Voltage
CTL OFF Mode Voltage
CTL Bias Current
VthH
VthL
ICTL
-
-
-
0.8
30
OFF MODE
CTL = 5 V
15
µA
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BD4xxM2-C Series
●Typical Performance Curves
■BD433M2WEFJ-C / BD433M2EFJ-C / BD433M2WFP3-C / BD433M2FP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, CTL = 5 V (*1), IOUT = 0 mA.
*1 Applicable for product with Enable Input.
100
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
Figure 5. Circuit Current vs. Power Supply Voltage
Figure 6. Output Voltage vs. Power Supply Voltage
(IOUT = 0 mA)
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
Supply Voltage:VCC[V]
Supply Voltage:VCC[V]
Figure 8. Output Voltage vs. Power Supply Voltage
(IOUT = 0 mA)
Figure 7. Circuit Current vs. Power Supply Voltage
*magnified Figure 5. at low supply voltage
*magnified Figure 6. at low supply voltage
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BD4xxM2-C Series
●Typical Performance Curves
■BD433M2WEFJ-C / BD433M2EFJ-C / BD433M2WFP3-C / BD433M2FP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, CTL = 5 V (*1), IOUT = 0 mA.
*1 Applicable for product with Enable Input.
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
0
100
200
300
400
500
600
700
Output Current: IOUT[mA]
Figure 9. Output Voltage vs. Power Supply Voltage
(IOUT = 10 mA)
Figure10. Output Voltage vs. Output Current
(Over Current Protection)
90
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
80
70
60
50
40
30
20
10
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0.01
0.1
1
10
100
0
20 40 60 80 100 120 140 160 180 200
Output Current: IOUT[mA]
Frequency:f [kHz]
Figure 11. Dropout Voltage
(VCC = 3.135 V)
Figure 12. Ripple Rejection
(ein = 1 Vrms, IOUT = 100 mA)
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BD4xxM2-C Series
●Typical Performance Curves
■BD433M2WEFJ-C / BD433M2EFJ-C / BD433M2WFP3-C / BD433M2FP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, CTL = 5 V (*1), IOUT = 0 mA.
*1 Applicable for product with Enable Input.
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
40
80
120
160
200
100
120
140
160
180
200
Junction Temperature:Tj[°C]
Output Current: IOUT[mA]
Figure 14. Output Voltage vs. Temperature
(Thermal Shut Down)
Figure 13. Circuit Current vs. Output Current
3.370
3.350
3.330
3.310
3.290
3.270
3.250
3.230
100
90
80
70
60
50
40
30
20
10
0
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature:Tj[°C]
-40
0
40
80
120
160
Junction Temperature:Tj[°C]
Figure 15. Output Voltage vs. Temperature
Figure 16. Circuit Current vs. Temperature
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BD4xxM2-C Series
●Typical Performance Curves
■BD433M2WEFJ-C / BD433M2WFP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, IOUT = 0 mA
10
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
0
1
2
3
4
5
CTL Supply Voltage:CTL[V]
Figure 17. Shut Down Current vs. Power Supply Voltage
(CTL = 0 V)
Figure 18. CTL ON / OFF Mode Voltage
(Tj = -40 °C)
6
5
4
3
2
6
5
4
3
2
1
0
1
Tj = 25 °C
Tj = 125 °C
0
0
1
2
3
4
5
0
1
2
3
4
5
CTL SupplyVoltage:CTL[V]
CTL Supply Voltage:CTL[V]
Figure 20. CTL ON / OFF Mode Voltage
(Tj = 125 °C)
Figure 19. CTL ON / OFF Mode Voltage
(Tj = 25 °C)
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BD4xxM2-C Series
●Typical Performance Curves
■BD433M2WEFJ-C / BD433M2WFP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, IOUT = 0 mA
5
4
3
2
1
0
30
25
20
15
10
5
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
-40
0
40
80
120
160
0
1
2
3
4
5
Junction Temperature:Tj[°C]
CTL Supply Voltage:CTL[V]
Figure 21. Shut Down Current vs. Temperature
(CTL = 0 V)
Figure 22. CTL Bias Current vs. CTL Supply Voltage
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●Typical Performance Curves
■BD450M2WEFJ-C / BD450M2EFJ-C / BD450M2WFP3-C / BD450M2FP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, CTL = 5V (*1), IOUT = 0 mA
*1 Applicable for product with Enable Input.
100
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
Figure 23. Circuit Current vs. Power Supply Voltage
Figure 24. Output Voltage vs. Power Supply Voltage
(IOUT = 0 mA)
100
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
Supply Voltage:VCC[V]
Supply Voltage:VCC[V]
Figure 26. Output Voltage vs. Power Supply Voltage
(IOUT = 0 mA)
Figure 25. Circuit Current vs. Power Supply Voltage
*magnified Figure 23. at low supply voltage
*magnified Figure 24. at low supply voltage
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●Typical Performance Curves
■BD450M2WEFJ-C / BD450M2EFJ-C / BD450M2WFP3-C / BD450M2FP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, CTL = 5V (*1), IOUT = 0 mA
*1 Applicable for product with Enable Input.
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
100
200
300
400
500
600
700
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
Output Current: IOUT: [mA]
Figure 28. Output Voltage vs. Output Current
(Over Current Protection)
Figure 27. Output Voltage vs. Power Supply Voltage
(IOUT = 10 mA)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
90
80
70
60
50
40
30
20
10
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
20 40 60 80 100 120 140 160 180 200
Output Current: IOUT[mA]
0.01
0.1
1
10
100
Frequwncy: f [kHz]
Figure 30. Ripple Rejection
(ein = 1 Vrms, IOUT = 100 mA)
Figure 29. Dropout Voltage
(VCC = 4.75 V)
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●Typical Performance Curves
■BD450M2WEFJ-C / BD450M2EFJ-C / BD450M2WFP3-C / BD450M2FP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, CTL = 5V (*1), IOUT = 0 mA
*1 Applicable for product with Enable Input.
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
40
80
120
160
200
100
120
140
160
180
200
Output Current: IOUT[mA]
Junction Temperature:Tj[°C]
Figure 31. Circuit Current vs. Output Current
Figure 32. Output Voltage vs. Temperature
(Thermal Shut Down)
100
90
80
70
60
50
40
30
20
10
0
5.100
5.080
5.060
5.040
5.020
5.000
4.980
4.960
4.940
4.920
4.900
-40 -20
0
20 40 60 80 100 120 140 160
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature:Tj[°C]
Junction Temperature:Tj[℃]
Figure 34. Circuit Current vs. Temperature
Figure 33. Output Voltage vs. Temperature
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●Typical Performance Curves
■BD450M2WEFJ-C / BD450M2WFP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, IOUT = 0 mA
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
Tj = -40 °C
0
1
2
3
4
5
0
5
10 15 20 25 30 35 40 45
Supply Voltage:VCC[V]
CTL Supply Voltage:CTL[V]
Figure 35. Shut Down Current vs. Power Supply Voltage
(CTL = 0 V)
Figure 36. CTL ON / OFF Mode Voltage
(Tj = -40 °C)
6
5
4
3
2
6
5
4
3
2
1
0
1
Tj = 125 °C
Tj = 25 °C
0
0
1
2
3
4
5
0
1
2
3
4
5
CTL Supply Voltage:CTL[V]
CTL Supply Voltage:CTL[V]
Figure 38. CTL ON / OFF Mode Voltage
(Tj = 125 °C)
Figure 37. CTL ON / OFF Mode Voltage
(Tj = 25 °C)
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●Typical Performance Curves
■BD450M2WEFJ-C / BD450M2WFP3-C Reference Data
Unless otherwise specified: -40 °C ≤ Tj ≤ +150 °C, VCC = 13.5 V, IOUT = 0 mA
30
25
20
15
10
5
5
4
3
2
1
0
Tj = -40 °C
Tj = 25 °C
Tj = 125 °C
0
-40
0
40
80
120
160
0
1
2
3
4
5
Junction Temperature:Tj[°C]
CTL Supply Voltage:CTL[V]
Figure 39. Shut Down Current vs. Temperature
(CTL = 0 V)
Figure 40. CTL Bias Current vs. CTL Supply
Voltage
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●Measurement Circuit for Typical Performance Curves (BD433 / 450M2WEFJ-C)
8:VCC
7:CTL
6:N.C.
5:GND
8:VCC
7:CTL
6:N.C.
5:GND
4.7µF
4.7µF
BD4xxM2WEFJ-C
BD4xxM2WEFJ-C
1:VOUT 2:N.C.
3:N.C.
4:N.C.
1:VOUT 2:N.C.
3:N.C.
4:N.C.
IOUT
10µF
10µF
Measurement Setup for
Figure 5, 7, 16, 17, 21,
Figure 23, 25, 34, 35, 39
Measurement Setup for
Figure 6, 8, 14, 15,
Figure 24, 26, 32, 33
Measurement Setup for
Figure 9, 27
8:VCC
7:CTL
6:N.C.
5:GND
4.7µF
BD4xxM2WEFJ-C
1:VOUT 2:N.C.
3:N.C.
4:N.C.
10µF
IOUT
Measurement Setup for
Figure 11, 29
Measurement Setup for
Figure 12, 30
Measurement Setup for
Figure 10, 28
8:VCC
7:CTL
6:N.C.
5:GND
4.7µF
BD4xxM2WEFJ-C
1:VOUT 2:N.C.
3:N.C.
4:N.C.
10µF
IOUT
Measurement Setup for
Figure 22, 40
Measurement Setup for
Figure 18, 19, 20,
Figure 36, 37, 38
Measurement Setup for
Figure 13, 31
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●Measurement Circuit for Typical Performance Curves (BD433 / 450M2EFJ-C)
Measurement Setup for
Figure 6, 8, 14, 15,
Figure 24, 26, 32, 33
Measurement Setup for
Figure 5, 7, 16,
Measurement Setup for
Figure 9, 27
Figure 23, 25, 34
8:VCC
7:N.C.
6:N.C.
5:GND
8:VCC
7:N.C.
6:N.C.
5:GND
1Vrms
4.7µF
4.7µF
BD4xxM2EFJ-C
BD4xxM2EFJ-C
1:VOUT 2:N.C.
3:N.C.
4:N.C.
1:VOUT 2:N.C.
3:N.C.
4:N.C.
10µF
10µF
IOUT
Measurement Setup for
Figure 12, 30
Measurement Setup for
Figure 11, 29
Measurement Setup for
Figure 10, 28
8:VCC
7:N.C.
6:N.C.
5:GND
4.7µF
BD4xxM2EFJ-C
1:VOUT 2:N.C.
3:N.C.
4:N.C.
10µF
IOUT
Measurement Setup for
Figure 13, 31
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●Measurement Circuit for Typical Performance Curves (BD433 / 450M2WFP3-C)
4:GND
4:GND
BD4xxM2WFP3-C
BD4xxM2WFP3-C
1:VCC
2:CTL
3:VOUT
1:VCC
2:CTL
3:VOUT
IOUT
4.7µF
10µF
4.7µF
10µF
Measurement Setup for
Figure 5, 7, 16, 17, 21,
Figure 23, 25, 34, 35, 39
Measurement Setup for
Figure 6, 8, 14, 15,
Figure 24, 26, 32, 33
Measurement Setup for
Figure 9, 27
4:GND
4:GND
BD4xxM2WFP3-C
BD4xxM2WFP3-C
1:VCC
2:CTL
3:VOUT
1:VCC
2:CTL
3:VOUT
4.7uF
10uF
4.7µF
10µF
IOUT
Measurement Setup for
Figure 12, 30
Measurement Setup for
Figure 10, 28
Measurement Setup for
Figure 11, 29
4:GND
4:GND
4:GND
BD4xxM2WFP3-C
BD4xxM2WFP3-C
BD4xxM2WFP3-C
1:VCC
2:CTL
3:VOUT
1:VCC
2:CTL
3:VOUT
1:VCC
2:CTL
3:VOUT
4.7µF
4.7µF
10µF
4.7µF
10µF
IOUT
Measurement Setup for
Figure 18, 19, 20,
Figure 36, 37, 38
Measurement Setup for
Figure 13, 31
Measurement Setup for
Figure 22, 40
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●Measurement Circuit for Typical Performance Curves (BD433 / 450M2FP3-C)
4:GND
4:GND
BD4xxM2FP3-C
BD4xxM2FP3-C
1:VCC
2:GND
3:VOUT
1:VCC
2:GND
3:VOUT
4.7uF
10uF
4.7uF
10uF IOUT
Measurement Setup for
Figure 5, 7, 16,
Measurement Setup for
Figure 6, 8, 14, 15,
Measurement Setup for
Figure 9, 27
Figure 23, 25, 34
Figure 24, 26, 32, 33
4:GND
BD4xxM2FP3-C
1:VCC
2:GND
3:VOUT
1Vrms
4.7uF
10uF IOUT
Measurement Setup for
Figure 11, 29
Measurement Setup for
Figure 12, 30
Measurement Setup for
Figure 10, 28
Measurement Setup for
Figure 13, 31
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●Selection of Components Externally Connected
・VCC Pin
Insert Capacitors with a capacitance of 0.1 μF or higher between the VCC and GND pin. Choose the capacitance
according to the line between the power smoothing circuit and the VCC pin. Selection of the capacitance also
depends on the application. Verify the application and allow sufficient margins in the design. We recommend using a
capacitor with excellent voltage and temperature characteristics.
・Output Pin Capacitor
In order to prevent oscillation, a capacitor needs to be placed between the output pin and GND pin. We recommend
using a capacitor with a capacitance of 10 μF (Typ.) or higher. Electrolytic, tantalum and ceramic capacitors can be
used. When selecting the capacitor ensure that the capacitance of 6 μF or higher is maintained at the intended
applied voltage and temperature range. Due to changes in temperature the capacitor’s capacitance can fluctuate
possibly resulting in oscillation. For selection of the capacitor refer to the data of Figure 41.
The stable operation range given in the data of Figure 41 is based on the standalone IC and resistive load. For actual
applications the stable operating range is influenced by the PCB impedance, input supply impedance and load
impedance. Therefore verification of the final operating environment is needed.
When selecting a ceramic type capacitor, we recommend using X5R, X7R or better with excellent temperature and
DC-biasing characteristics and high voltage tolerance.
Also, in case of rapidly changing input voltage and load current, select the capacitance in accordance with verifying
that the actual application meets with the required specification.
○Condition
○Condition
VCC = 13.5 V
(CTL = 5 V)
CIN = 0.1 µF
VCC = 13.5 V
(CTL = 5 V)
CIN = 0.1 µF
10 µF ≤ COUT (Typ.)
-40 °C ≤ Tj ≤ +150 °C
unstable operation range
stable operation range
-40 °C ≤ Tj ≤+150 °C
stable operation range
unstable operation range
Figure 41. ESR vs. IOUT
Figure 42. COUT vs. IOUT
●Measurement Setup
8:VCC
7:CTL
6:N.C.
5:GND
8:VCC
7:N.C.
6:N.C.
5:GND
4:GND
4:GND
BD4xxM2WFP3-C
BD4xxM2FP3-C
CIN
CIN
BD4xxM2EFJ-C
BD4xxM2WEFJ-C
1:VCC
2:CTL
3:VOUT
2:GND
1:VCC
3:VOUT
1:VOUT 2:N.C.
3:N.C.
4:N.C.
1:VOUT 2:N.C.
3:N.C.
4:N.C.
ESR
ESR
CIN
CIN
ESR
ESR
IOUT
IOUT
IOUT
IOUT
COUT
COUT
COUT
COUT
Figure 43. Measurement Setups for ESR Reference Data
(about Output Pin Capacitor)
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●Power Dissipation
■HTSOP-J8
5
IC mounted on ROHM standard board based on JEDEC.
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.6 mmt
(with thermal via on the board)
Mount condition: PCB and exposed pad are soldered.
Top copper foil: The footprint ROHM recommend.
+ wiring to measure.
4
②2.9 W
3
①
②
: 1-layer PCB
2
(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)
: 4-layer PCB
(2 inner layers and Copper foil area on the reverse side of PCB:
74.2mm x 74.2 mm)
①0.75 W
1
Condition①: θja = 166.7 °C/W, θjc (top) = 45 °C/W
Condition②: θja = 43.1 °C/W, θjc (top) = 16 °C/W, θjc (bottom) = 10 °C/W
0
0
25
50
75
100
125
150
AmbientTemperature:Ta[˚С]
Figure 44. Package Data
(HTSOP-J8)
■SOT223-4F
5
IC mounted on ROHM standard board based on JEDEC.
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.6 mmt
(with thermal via on the board)
Mount condition: PCB and exposed pad are soldered.
Top copper foil: The footprint ROHM recommend.
+ wiring to measure.
4
3
2
①
②
: 1-layer PCB
②1.5 W
(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)
: 4-layer PCB
(2 inner layers and Copper foil area on the reverse side of PCB:
74.2mm x 74.2 mm)
1
0
①0.6 W
Condition①: θja = 208.3 °C/W, θjc (top) = 52 °C/W
Condition②: θja = 83.3 °C/W, θjc (top) = 36 °C/W, θjc (bottom) = 17 °C/W
0
25
50
75
100
125
150
AmbientTemperature:Ta[°C]
Figure 45. Package Data
(SOT223-4F)
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Refer to the heat mitigation characteristics illustrated in Figure 44, 45 when using the IC in an environment of Ta ≥ 25 °C.
The characteristics of the IC are greatly influenced by the operating temperature, and it is necessary to operate
under the maximum junction temperature Tjmax.
Even if the ambient temperature Ta is at 25 °C it is possible that the junction temperature Tj reaches high temperatures.
Therefore, the IC should be operated within the power dissipation range.
The following method is used to calculate the power consumption Pc (W)
Pc = ( VCC - VOUT ) x IOUT + VCC x Icc
Power dissipation Pd ≥ Pc
VCC : Input Voltage
VOUT : Output Voltage
IOUT : Load Current
The load current IOUT is obtained by operating the IC within the power dissipation range.
Icc
Pc
: Circuit Current
: Power Consumption
Pd - VCC x Icc
VCC - VOUT
IOUT ≤
(Refer to Figure 13, 31 for the Icc.)
Thus, the maximum load current IOUTmax for the applied voltage VCC can be calculated during the thermal design process.
The following method is also used to calculate the junction temperature Tj.
Ta : Ambient Temperature
Tc
Tj
: Case Temperature
: Junction Temperature
Tj = Pc x θjc + Tc
θjc : Thermal Resistance
(Junction to Case)
●HTSOP-J8
■Calculation Example 1) with Ta = 105 °C VCC = 13.5 V, VOUT = 5.0 V
1.06 W - 13.5 V x Icc
IOUT ≤
IC stand alone θja = 43.1 °C/W → -23 mW/°C
25 °C = 2.9 W → 105 °C = 1.06 W
8.5 V
IOUT ≤ 125 mA ( Icc: 45 µA )
At Ta = 105 °C with Figure 44 ② condition, the calculation shows that 125 mA of output current is possible at 8.5 V potential
difference across input and output.
The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the
whole operating temperature range within the power dissipation range.
In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as
follows:
Pc = VCC x ( Icc + Ishort )
( Refer to Figure 10, 28 for the Ishort )
Ishort : Short Current
■Calculation Example 2) with Tc(bottom) = 80 °C, VCC = 13.5 V, VOUT = 5.0 V, IOUT = 80 mA
At Tc(bottom) = 80 °C with Figure 44 ② condition, the power consumption Pc of the IC can be calculated as follows:
Pc = ( VCC - VOUT ) x IOUT + VCC x Icc
Pc = ( 13.5 V - 5.0 V ) x 80 mA + 13.5 V x Icc
Pc = 0.681 W
( Icc = 45 µA )
At the power consumption Pc is 0.681 W, the junction temperature Tj can be calculated as follows:
Tj = Pc x θjc + Tc
Tj = 0.681 W x θjc + 80 °C
Tj = 86.8 °C
( θjc (bottom) = 10 °C/W )
The junction temperature is 86.8 °C, at above condition.
The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the
whole operating temperature range within Tj ≤ 150 °C.
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●SOT223-4F
■Calculation Example 1) with Ta = 105 °C VCC = 13.5 V, VOUT = 5.0 V
0.54 W - 13.5 V x Icc
IOUT ≤
IC stand alone θja = 83.3 °C/W → -12 mW/°C
25 °C = 1.50 W → 105 °C = 0.54 W
8.5 V
IOUT ≤ 63 mA ( Icc: 45 µA )
At Ta = 105°C with Figure 45 ② condition, the calculation shows that 63 mA of output current is possible at 8.5 V potential
difference across input and output.
The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the
whole operating temperature range within the power dissipation range.
In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as
follows:
Pc = VCC x ( Icc + Ishort )
( Refer to Figure 10, 28 for the Ishort )
■Calculation Example 2) with Tc(bottom) = 92 °C, VCC = 13.5 V, VOUT = 5.0 V, IOUT = 80 mA
At Tc(bottom) = 92 °C with Figure 45 ② condition, the power consumption Pc of the IC can be calculated as follows:
Pc = ( VCC - VOUT ) x IOUT + VCC x Icc
Pc = ( 13.5 V - 5.0 V ) x 80 mA + 13.5 V x Icc
Pc = 0.681 W
( Icc = 45 µA )
At the power consumption Pc is 0.681 W, the junction temperature Tj can be calculated as follows:
Tj = Pc x θjc + Tc
Tj = 0.681 W x θjc + 92 °C
Tj = 103.6 °C
( θjc (bottom) = 17 °C/W )
The junction temperature is 103.6 °C, at above condition.
The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the
whole operating temperature range within Tj ≤ 150 °C.
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●Application Examples
・Applying positive surge to the VCC pin
If the possibility exists that surges higher than 45 V will be applied to the VCC pin, a Zener Diode should be placed
between the VCC pin and GND pin as shown in the figure below.
4:GND
4:GND
BD4xxM2WFP3-C
BD4xxM2FP3-C
1:VCC
2:CTL
3:VOUT
1:VCC
2:GND
3:VOUT
Battery
Battery
VOUT
VOUT
CIN
COUT
CIN
COUT
Zener
Diode
Zener
Diode
Input
switch
HTSOP-J8
SOT223-4F
Figure 46. Sample Application Circuit 1
・Applying negative surge to the VCC pin
If the possibility exists that negative surges lower than the GND are applied to the VCC pin, a Shottky Diode should be
place between the VCC pin and GND pin as shown in the figure below.
4:GND
4:GND
BD4xxM2FP3-C
BD4xxM2WFP3-C
1:VCC
2:GND
3:VOUT
1:VCC
2:CTL
3:VOUT
Battery
Battery
VOUT
VOUT
CIN
COUT
CIN
COUT
Shottky
Diode
Shottky
Diode
Input
switch
HTSOP-J8
SOT223-4F
Figure 47. Sample Application Circuit 2
・Implementing a Protection Diode
If the possibility exists that a large inductive load is connected to the output pin resulting in back-EMF at time of
startup and shutdown, a protection diode should be placed as shown in the figure below.
VOUT
Figure 48. Sample Application Circuit 3
●I / O Equivalence Circuit
VCC
(Applicable for product with Enable Input)
4 MΩ (Typ.)
VOUT
1545 kΩ (Typ./5.0 V Output)
840 kΩ (Typ./3.3 V Output)
530 kΩ (Typ.)
Figure 49. Input / Output Equivalence Circuit
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●Operational Notes
1) Absolute Maximum Ratings
Exceeding the absolute maximum rating for supply voltage, operating temperature or other parameters can result in
damages to or destruction of the chip. In this event it also becomes impossible to determine the cause of the
damage (e.g. short circuit, open circuit, etc.). Therefore, if any special mode is being considered with values
expected to exceed the absolute maximum ratings, implementing physical safety measures, such as adding fuses,
should be considered.
2) The electrical characteristics given in this specification may be influenced by conditions such as temperature, supply
voltage and external components. Transient characteristics should be sufficiently verified.
3) GND Electric Potential
Keep the GND pin potential at the lowest (minimum) level under any operating condition. Furthermore, ensure that,
including the transient, none of the pin’s voltages are less than the GND pin voltage.
4) GND Wiring Pattern
When both a small-signal GND and a high current GND are present, single-point grounding (at the set standard
point) is recommended. This in order to separate the small-signal and high current patterns and to ensure that
voltage changes stemming from the wiring resistance and high current do not cause any voltage change in the
small-signal GND. Similarly, care must be taken to avoid wiring pattern fluctuations in any connected external
component GND.
5) Inter-Pin Shorting and Mounting Errors
Ensure that when mounting the IC on the PCB the direction and position are correct. Incorrect mounting may result
in damaging the IC. Also, shorts caused by dust entering between the output, input and GND pin may result in
damaging the IC.
6) Inspection Using the Set Board
The IC needs to be discharged after each inspection process as, while using the set board for inspection, connecting
a capacitor to a low-impedance pin may cause stress to the IC. As a protection from static electricity, ensure that the
assembly setup is grounded and take sufficient caution with transportation and storage. Also, make sure to turn off
the power supply when connecting and disconnecting the inspection equipment.
7) Power Dissipation (Pd)
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 114.3mm x 76.2mm x 1.6mmt glass epoxy board. In case of exceeding this absolute
maximum rating, increase the board size and copper area to prevent exceeding the Pd rating.
8) Thermal Design
The power dissipation under actual operating conditions should be taken into consideration and a sufficient margin
should be allowed for in the thermal design. On the reverse side of the package this product has an exposed heat
pad for improving the heat dissipation. Use both the front and reverse side of the PCB to increase the heat
dissipation pattern as far as possible. The amount of heat generated depends on the voltage difference across the
input and output, load current, and bias current. Therefore, when actually using the chip, ensure that the generated
heat does not exceed the Pd rating.
Tjmax: maximum junction temperature = 150°C, Ta: Ambient Temperature (°C), θja: Junction-to-Ambient Thermal
Resistance (°C/W), Pd: Power Dissipation Rating (W), Pc: Power Consumption (W), VCC: Supply Voltage,
VOUT: Output Voltage, IOUT: Output Current, Icc: Circuit Current
Power Dissipation Rating
Power Consumption
Pd (W) = ( Tjmax - Ta ) / θja
Pc (W) = ( VCC - VOUT ) x IOUT + VCC x Icc
9) Overcurrent Protection Circuit
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
10) Thermal Shut Down (TSD)
This IC incorporates and integrated thermal shutdown circuit to prevent heat damage to the IC. Normal operation
should be within the power dissipation rating, if however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise and the TSD circuit will be activated and turn all output pins OFF. After the Tj falls below the
TSD threshold the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
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11) In some applications, the VCC and pin potential might be reversed, possibly resulting in circuit internal damage or
damage to the elements. For example, while the external capacitor is charged, the VCC shorts to the GND. Use a
capacitor with a capacitance with less than 1000 μF. We also recommend using reverse polarity diodes in series or a
bypass between all pins and the VCC pin.
Bypass Diode
Reverse Polarity Diode
VCC
VOUT
GND
Figure 50.
12) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a
variety of parasitic elements.
For example, in case a resistor and a transistor are connected to the pins as shown in the figure below then:
○The P/N junction functions as a parasitic diode when GND > pin A for the resistor, or GND > pin B for the transistor.
○Also, when GND > pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of
the other adjacent elements to operate as a parasitic NPN transistor.
Parasitic diodes inevitably occur in the structure of the IC. Their operation can result in mutual interference between
circuits and can cause malfunctions and, in turn, physical damage to or destruction of the chip. Therefore do not
employ any method in which parasitic diodes can operate such as applying a voltage to an input pin that is lower
than the (P substrate) GND.
Figure 51.
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BD4xxM2-C Series
●Physical Dimension, Tape and Reel Information (HTSOP-J8)
Package Name
HTSOP-J8
<Tape and Reel information>
Tape
Embossed carrier tape
2500pcs
Quantity
E2
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
Direction of feed
1pin
Reel
Order quantity needs to be multiple of the minimum quantity.
∗
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●Physical Dimension, Tape and Reel Information (SOT223-4F)
Package Name
SOT223-4F
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●Marking Diagrams (Top View)
SOT223-4F (Top View)
HTSOP-J8 (Top View)
Part Number Marking
LOT Number
Part Number Marking
LOT Number
1PIN Mark
1PIN
Part Number
Marking
Output
Voltage [V]
Enable
Input *1
Part Number
Marking
Output
Voltage [V]
Enable
Input *1
433M2W
450M2W
433M2
3.3
5.0
3.3
5.0
○
○
-
-
433M2W
450M2W
433M2
3.3
5.0
3.3
5.0
○
○
-
-
450M2
450M2
*1 ○: Includes Enable Input
-: Not includes Enable Input
*1 ○: Includes Enable Input
-: Not includes Enable Input
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●Revision History
Date
Revision
Changes
05.Dec.2012
001
002
New Release (BD450M2WEFJ-C, BD450M2EFJ-C)
15.Jan.2013
29.Oct.2013
Additional Entry (BD4xxM2-C Series)
P.1 , P.3 Figure 3, P.4, P.5 Figure 4, P.9, P.13,
P23, P.24, P.26, P.29, P.30
Improve the explanation and corrected type.
003
P.28, P.30
Improve the correct figure number because of sequence.
Before) Figure 48, 49, 50, 51, 52, 53.
After) Figure 46, 47, 48, 49, 50, 51.
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
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Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
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